N-Channel MOSFET 600V, 11A, 0.55Ω General Description Features The MDFS11N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDFS11N60 is suitable device for SMPS, high Speed switching and general purpose applications. @ VGS = 10V @ VGS = 10V Applications G VDS = 600V ID = 11A RDS(ON) ≤ 0.55Ω Power Supply PFC High Current, High Speed Switching D S TO-220FT Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage TC=25oC Continuous Drain Current (※) o TC=100 C Pulsed Drain Current (1) Symbol Rating Unit VDSS 600 V VGSS ±30 V 11 A 6.9 A 44 A ID IDM o TC=25 C Power Dissipation Derate above 25 oC Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy (4) Junction and Storage Temperature Range 49 W 0.39 W/ oC dv/dt 4.5 V/ns EAS 720 mJ TJ, Tstg -55~150 Symbol Rating RθJA 62.5 RθJC 2.55 PD o C ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Mar 2016 Version 1.2 (1) (1) 1 Unit o C/W MagnaChip Semiconductor Ltd. MDFS11N60 N-channel MOSFET 600V MDFS11N60 Part Number Temp. Range MDFS11N60TH o -55~150 C Package Packing RoHS Status TO-220FT Tube Halogen Free Electrical Characteristics (Ta = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 600 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 - 5.0 Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - - 1 μA Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA RDS(ON) VGS = 10V, ID = 5.5A - 0.45 0.55 Ω gfs VDS = 30V, ID = 5.5A - 13 - S - 38.4 - Drain-Source ON Resistance Forward Transconductance V Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs - 11.2 - Gate-Drain Charge Qgd VDS = 480V, ID = 11A, VGS = 10V - 14 - Input Capacitance Ciss - 1700 - Reverse Transfer Capacitance Crss - 6.2 - VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Output Capacitance Coss - 184 - Turn-On Delay Time td(on) - 38 - - 50 - - 76 - tf - 33 - Maximum Continuous Drain to Source Diode Forward Current IS - 11 - A Source-Drain Diode Forward Voltage VSD - - 1.4 V - 430 - ns - 4.0 - μC Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 300V, ID = 11A, RG = 25Ω ns Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 11A, VGS = 0V IF = 11A, dl/dt = 100A/μs Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤11A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=10.9mH, IAS=11A, VDD=50V, Rg =25Ω, Starting TJ=25°C Mar 2016 Version 1.2 2 MagnaChip Semiconductor Ltd. MDFS11N60 N-channel MOSFET 600V Ordering Information 1.0 20 0.9 0.8 RDS(ON) [Ω ] 25 ID,Drain Current [A] Notes 1. 250㎲ Pulse Test 2. TC=25℃ Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V 15 10 0.7 VGS=20V VGS=10.0V 0.6 0.5 5 0.4 5 10 15 20 25 0 5 10 VDS,Drain-Source Voltage [V] 20 25 30 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 3.0 ※ Notes : BVDSS, (Normalized) Drain-Source Breakdown Voltage ※ Notes : 1. VGS = 10 V 2. ID = 5.5 A 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 15 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 1. VGS = 0 V 2. 250 s Pulse Test 1.1 1.0 0.9 0.8 -50 200 0 50 ※ Notes : IDR Reverse Drain Current [A] 1. VGS = 0 V 2. ID = 250㎂ 10 ID [A] 200 Fig.4 Breakdown Voltage Variation vs. Temperature * Notes ; 1. VDS=30V 150℃ -55℃ 25℃ 1 4 6 8 10 150℃ 10 25℃ 1 0.1 0.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Mar 2016 Version 1.2 150 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 2 100 o o TJ, Junction Temperature [ C] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDFS11N60 N-channel MOSFET 600V 30 120V VGS, Gate-Source Voltage [V] 300V 480V Capacitance [pF] 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss Ciss ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 1 Fig.7 Gate Charge Characteristics 10 2 Fig.8 Capacitance Characteristics Operation in This Area is Limited by R DS(on) 14 10 s 100 s 1 12 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 100 ms 10 10 0 DC 1s -1 Single Pulse TJ=Max rated TC=25℃ 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] -1 8 6 4 2 -2 10 10 10 0 10 1 10 0 25 2 50 75 100 125 Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 16000 1 10 single Pulse RthJC = 2.55℃/W TC = 25℃ 14000 12000 0 10 10000 Power (W) Zθ JC(t), Thermal Response 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] D=0.5 0.2 0.1 -1 10 0.02 Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=2.55℃/W 0.01 2000 single pulse 0 1E-5 -2 10 -5 10 6000 4000 ※ Notes : 0.05 8000 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Mar 2016 Version 1.2 1E-4 4 MagnaChip Semiconductor Ltd. MDFS11N60 N-channel MOSFET 600V 4000 3800 3600 3400 3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0.1 ※ Note : ID = 11A 10 MDFS11N60 N-channel MOSFET 600V Physical Dimensions 3 Leads, TO-220FT E A F L1 D G Q1 ΦR L 3 x b1 3xb c 2xe Q θ Note: PKG Body Sizes exclude Mold Flash & Gate Burrs [Unit:mm] Mar 2016 Version 1.2 5 MagnaChip Semiconductor Ltd. MDFS11N60 N-channel MOSFET 600V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Mar 2016 Version 1.2 6 MagnaChip Semiconductor Ltd.