Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMH6672 SNOS957H – APRIL 2001 – REVISED AUGUST 2014 LMH6672 Dual, High Output Current, High Speed Op Amp 1 Features 2 Applications • • • • 1 • • • • • • • • High Output Drive – 19.2 VPP Differential Output Voltage, RL = 50 Ω – 9.6 VPP Single-ended Output Voltage, RL = 25 Ω High Output Current – ±200 mA @ VO = 9 VPP, VS = 12 V Low Distortion – 105 dB SFDR @ 100 kHz, VO = 8.4 VPP, RL = 25Ω – 98 dB SFDR @ 1MHz, VO = 2 VPP, RL = 100 Ω High Speed – 90 MHz 3 dB Bandwidth (G = 2) – 135 V/µs Slew Rate Low Noise – 3.1 nV/√Hz: Input Noise Voltage – 1.8 pA/√Hz: Input Noise Current Low Supply Current: 7.2mA/amp Single-supply Operation: 5 V to 12 V Stable for Gain of +2V/V or Higher Available in 8-pin SOIC and SO PowerPAD (DDA) ADSL PCI Modem Cards xDSL External Modems Line Drivers 3 Description The LMH6672 is a low cost, dual high speed op amp capable of driving signals to within 1 V of the power supply rails. It features the high output drive with low distortion required for the demanding application of a single supply xDSL line driver. When connected as a differential output driver, the LMH6672 can drive a 50-Ω load to 16.8 VPP swing with only −98 dBc distortion, fully supporting the peak upstream power levels for upstream full-rate ADSL. The LMH6672 is fully specified for operation with 5-V and 12-V supplies. Ideal for PCI modem cards and xDSL modems. Device Information(1) PART NUMBER LMH6672 PACKAGE SOIC (8) BODY SIZE (NOM) 4.89 mm × 3.90 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Typical Application + + 1/2 LMH6672 RO 12.5 Rf1 1:N VIN (VPP) AV . VIN Rg RL = 100: VOUT (1.2) Rf2 Note: Supply and Bypassing not shown. RO 12.5 - 1/2 LMH6672 + 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LMH6672 SNOS957H – APRIL 2001 – REVISED AUGUST 2014 www.ti.com Table of Contents 1 2 3 4 5 6 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 4 4 4 4 5 Absolute Maximum Ratings ...................................... Handling Ratings....................................................... Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... 6.6 ±2.5V Electrical Characteristics ................................ 6 6.7 Typical Performance Characteristics ........................ 7 7 Detailed Description ............................................ 15 8 Power Supply Recommendations...................... 16 9 Device and Documentation Support.................. 18 7.1 Functional Block Diagram ....................................... 15 8.1 Thermal Management ............................................. 16 9.1 Trademarks ............................................................. 18 9.2 Electrostatic Discharge Caution .............................. 18 9.3 Glossary .................................................................. 18 10 Mechanical, Packaging, and Orderable Information ........................................................... 18 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision G (March 2013) to Revision H Page • Changed data sheet flow and layout to conform with new TI standards. Added the following sections: Device Information Table, Application and Implementation; Device and Documentation Support; Mechanical, Packaging, and Ordering Information ....................................................................................................................................................... 1 • Added "Stable for Gain of +2V/V or Higher" in Features ....................................................................................................... 1 • Changed from "Junction Temperature Range" to "Operating Temperature Range" in Recommended Operating Conditions............................................................................................................................................................................... 4 • Deleted TJ = 25°C in Electrical Characteristics ...................................................................................................................... 5 • Deleted TJ = 25°C and "Slew Rate" in ±2.5V Electrical Characteristics................................................................................. 6 • Added condition "Av = + 2V/V" in Typical Performance Characteristics ................................................................................ 7 • Added "Vs= +/-2.5V" and "Vs=+/-6V" as curve labels for Figure 36 .................................................................................... 11 • Changed curve label from 31 MHz to 13 MHz. Changed title from +5V to +5V/V in Figure 37........................................... 12 • Changed "10V" to + "10V/V" in caption title for Figure 38.................................................................................................... 12 • Added "Vs = 12V" to Figure 39 caption title ......................................................................................................................... 13 • Added "Vs = 5V" to Figure 40 caption title ........................................................................................................................... 13 • Changed from "40 = 346 mW" to "40 mW lower or 346 mW" in Thermal Management...................................................... 17 • Changed from 41 mW to 17 mW.......................................................................................................................................... 17 • Added "from ambient"........................................................................................................................................................... 17 • Changed sentence beginning with "Using the same PDRIVER as above..." ........................................................................... 17 • Added caution note............................................................................................................................................................... 17 Changes from Revision F (March 2013) to Revision G • 2 Page Changed layout of National Data Sheet to TI format ........................................................................................................... 17 Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 LMH6672 www.ti.com SNOS957H – APRIL 2001 – REVISED AUGUST 2014 5 Pin Configuration and Functions 8-Pin SOIC (D) / SO PowerPAD (DDA) (Top View) 1 8 OUT A + V A - 2 + 7 -IN A +IN A 3 6 B + - V OUT B -IN B - 4 5 +IN B Pin Functions PIN I/O DESCRIPTION NUMBER NAME 1 OUT A O ChA Output 2 -IN A I ChA Inverting Input 3 +IN A I ChA Non-inverting Input 4 V- I Negative Supply 5 +IN B I ChB Non-inverting Input 6 -IN B I ChB Inverting Input 7 OUT B O ChB Output I Positive Supply 8 + V Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 3 LMH6672 SNOS957H – APRIL 2001 – REVISED AUGUST 2014 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN VIN Differential Output Short Circuit Duration See V 13.2 V V+ +0.8 V− −0.8 Voltage at Input/Output pins Junction Temperature V +150 Soldering Information (2) (3) UNIT ±1.2 (2) Supply Voltage (V+ − V−) (1) MAX (3) °C Infrared or Convection (20 sec) 235 °C Wave Soldering (10 sec) 260 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Shorting the output to either supply or ground will exceed the absolute maximum TJ and can result in failure. The maximum power dissipation is a function of TJ(MAX), RθJA and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) − TA)/RθJA. All numbers apply for packages soldered directly onto a PC board. 6.2 Handling Ratings Tstg Storage temperature range V(ESD) Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all (2) Electrostatic discharge (1) pins Machine Model (MM)l (3) (1) (2) (3) MIN MAX UNIT −65 +150 °C 2 2000 V 200 Human body model, 1.5 kΩ in series with 100 pF. Machine model, 200 Ω in series with 100 pF. JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX Supply Voltage (V - V ) ±2.5 ±6.5 V Operating Temperature Range −40 150 °C + − UNIT 6.4 Thermal Information THERMAL METRIC (1) RθJA (1) 4 Junction-to-ambient thermal resistance SOIC Package D SO PowerPAD Package DDA 8 PINS 8 PINS 172 58.6 UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 LMH6672 www.ti.com SNOS957H – APRIL 2001 – REVISED AUGUST 2014 6.5 Electrical Characteristics Unless otherwise specified, all limits are ensured for G = +2, VS = ±2.5 to ±6V, RF = RIN = 470Ω, RL = 100Ω. PARAMETER TEST CONDITIONS MIN (1) TYP (2) MAX (1) UNIT DYNAMIC PERFORMANCE −3dB Bandwidth 90 MHz 12 MHz VS = ±6V, 4V Step, 10-90% 135 V/μs VS = 6V, 4V Step, 10-90% 23.5 ns −105 dBc VO = 8.4 VPP, f = 1 MHz, RL = 100Ω −90 dBc VO = 8.4 VPP, f = 100 kHz, RL = 25Ω −110 dBc VO = 8.4 VPP, f = 1 MHz, RL = 100Ω −87 dBc 0.1dB Bandwidth VS = ±6V Slew Rate Rise and Fall Time DISTORTION and NOISE RESPONSE 2nd Harmonic Distortion 3rd Harmonic Distortion VO = 8.4 VPP, f = 100 kHz, RL = 25Ω Input Noise Voltage f = 100 kHz 3.1 nV√Hz Input Noise Current f = 100 kHz 1.8 pA/√Hz INPUT CHARACTERISTICS VOS Input Offset Voltage TJ = −40°C to 125°C −5.5 0.1 5.5 −4 −0.2 4 IB Input Bias Current TJ = −40°C to 125°C IOS Input Offset Current TJ = −40°C to 125°C −2.1 CMVR Common Voltage Range VS = ±6V CMRR Common-Mode Rejection Ratio VS = ±6V, TJ = −40°C to 125°C mV 8 16 µA 0 2.1 µA −6.0 −5.7 to 4.5 4.5 150 V 7.5 µV/V V/mV TRANSFER CHARACTERISTICS AVOL VO Voltage Gain Output Swing VO Output Swing Output Current (3) ISC RL = 1k, TJ = −40°C to 125°C 1.0 5 RL = 25Ω, TJ = −40°C to 125°C 0.67 3.4 RL = 25Ω, VS = ±6V −4.5 ±4.8 4.5 RL = 25Ω, TJ = −40°C to 125°C, VS = ±6V −4.4 ±4.8 4.4 RL = 1k, VS = ±6V −4.8 ±4.8 4.8 RL = 1k, TJ = −40°C to 125°C, VS = ±6V −4.7 ±4.8 4.7 VO = 0, VS = ±6V 350 525 VO = 0, VS = ±6V, TJ = −40°C to 125°C 260 600 V/mV V V mA mA POWER SUPPLY IS Supply Current/Amp VS = ±6V 8 VS = ±6V, TJ = −40°C to 125°C PSRR (1) (2) (3) Power Supply Rejection Ratio VS = ±2.5V to ±6V, TJ = −40°C to 125°C 7.2 72 9 88.5 mA dB All limits are specified by testing, characterization or statistical analysis. Typical values represent the most likely parametric norm. Shorting the output to either supply or ground will exceed the absolute maximum TJ and can result in failure. Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 5 LMH6672 SNOS957H – APRIL 2001 – REVISED AUGUST 2014 www.ti.com 6.6 ±2.5V Electrical Characteristics Unless otherwise specified, all limits are ensured for G = +2, VS = ±2.5 to ±6V, RF = RIN = 470Ω, RL = 100Ω. PARAMETER TEST CONDITIONS MIN (1) TYP (2) MAX (1) UNIT DYNAMIC PERFORMANCE −3 dB Bandwidth 80 MHz 0.1 dB Bandwidth 12 MHz 14 ns VO = 2 VPP, f = 100 kHz, RL = 25Ω −96 dBc VO = 2 VPP, f = 1 MHz, RL = 100Ω −85 dBc VO = 2 VPP, f = 100 kHz, RL = 25Ω −98 dBc VO = 2 VPP, f = 1 MHz, RL = 100Ω −87 dBc Rise and Fall Time 2V Step, 10-90% DISTORTION and NOISE RESPONSE 2nd Harmonic Distortion rd 3 Harmonic Distortion INPUT CHARACTERISTICS VOS Input Offset Voltage TJ = −40°C to 125°C −5.5 −4.0 IB Input Bias Current CMVR Common-Mode Voltage Range CMRR Common-Mode Rejection Ratio TJ = −40°C to 125°C 5.5 0.02 8.0 −2.5 TJ = −40°C to 125°C 150 8 RL = 25Ω, TJ = −40°C to 125°C 0.67 3 1.0 4 RL = 25Ω 1.20 1.45 RL = 25Ω, TJ = −40°C to 125°C 1.10 1.35 RL = 1k 1.30 1.60 RL = 1k, TJ = −40°C to 125°C 1.25 1.50 4.0 mV 16 µA 1.0 V µV/V TRANSFER CHARACTERISTICS AVOL Voltage Gain RL = 1k, TJ = −40°C to 125°C V/mV OUTPUT CHARACTERISTICS VO Output Voltage Swing V POWER SUPPLY IS Supply Current/Amp 8.0 TJ = −40°C to 125°C (1) (2) 6 6.7 9.0 mA All limits are specified by testing, characterization or statistical analysis. Typical values represent the most likely parametric norm. Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 LMH6672 www.ti.com SNOS957H – APRIL 2001 – REVISED AUGUST 2014 6.7 Typical Performance Characteristics Av = + 2V/V 1.2 14 -40°C 1k: 12 1.0 VSUPPLY - VOUT (V) SWING (V) 10 25: 8 6 4 0.8 85°C 25°C 0.6 0.4 0.2 2 0 0 0 2 4 6 8 10 12 0 14 1 2 3 4 5 6 7 VS (V) ±VSUPPLY (V) Figure 1. Output Swing RL = 25Ω, 1 kΩ @ −40°C, 25°C, 85°C Figure 2. Positive Output Swing into 1kΩ 1.0 1.6 -40°C 0.9 1.4 -40°C 1.2 0.7 VSUPPLY - VOUT (V) VOUT - VSUPPLY (V) 0.8 0.6 85°C 25°C 0.5 0.4 0.3 1.0 85°C 0.8 25°C 0.6 0.4 0.2 0.2 0.1 0 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 ±VSUPPLY (V) ±VSUPPLY (V) Figure 3. Negative Output Swing into 1 kΩ Figure 4. Positive Output Swing into 25Ω 1.4 5.5 5.4 VS = ±6V 5.3 -40°C 1.0 5.2 25°C 25°C 0.8 +VOUT (V) VOUT - VSUPPLY (V) 1.2 85°C 0.6 5.1 85°C 5.0 4.9 4.8 0.4 4.7 0.2 -40°C 4.6 0 4.5 0 1 2 3 4 5 6 7 0 50 100 150 200 ±VSUPPLY (V) ILOAD (mA) Figure 5. Negative Output Swing into 25Ω Figure 6. +VOUT vs. ILOAD 250 Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 7 LMH6672 SNOS957H – APRIL 2001 – REVISED AUGUST 2014 www.ti.com Typical Performance Characteristics (continued) Av = + 2V/V 5.5 2.0 5.4 5.3 1.8 85°C 1.7 +VOUT (V) 5.2 -VOUT (V) VS = ±2.5V 1.9 VS = ±6V 5.1 5.0 4.9 4.8 1.6 85°C 1.5 1.4 1.3 25°C 25°C 4.7 1.2 -40°C 4.6 1.1 4.5 1.0 0 50 100 150 200 250 -40°C 0 50 100 150 200 ILOAD (mA) ILOAD (mA) Figure 7. −VOUT vs. ILOAD Figure 8. +VOUT vs. ILOAD 250 16 2.0 85°C 1.9 VS = ±2.5V 14 SUPPLY CURRENT (mA) 1.8 -VOUT (V) 1.7 85°C 1.6 1.5 1.4 25°C 1.3 1.2 -40°C 1.1 12 25°C -40°C 10 8 6 4 2 0 1.0 0 50 100 150 200 0 250 2 4 6 8 10 12 14 16 SUPPLY VOLTAGE (V) ILOAD (mA) Figure 10. Supply Current vs. Supply Voltage Figure 9. −VOUT vs. ILOAD 700 700 -40°C -40°C 600 ISOURCE (mA) ISOURCE (mA) 600 500 85°C 25°C 400 300 25°C 85°C 400 300 200 200 3 4 5 6 7 8 9 10 11 12 13 3 VS (V) 4 5 6 7 8 9 10 11 12 13 VS (V) Figure 11. Sourcing Current vs. Supply Voltage 8 500 Figure 12. Sinking Current vs. Supply Voltage Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 LMH6672 www.ti.com SNOS957H – APRIL 2001 – REVISED AUGUST 2014 Typical Performance Characteristics (continued) Av = + 2V/V 1 3 2 0.5 VOS (mV) VOS (mV) 1 25°C -40°C 0 -40°C 25°C 0 85°C -1 -0.5 85°C -2 -1 3 4 5 6 -3 -0.5 1 9 10 11 12 13 14 15 7 8 2.5 4 VS (V) 7 8.5 10 11.5 13 VCM (V) Figure 13. VOS vs. VS Figure 14. VOS vs. VCM, VS = 12V 10 3 85°C 25°C INPUT BIAS CURRENT (PA) 2 -40°C 1 VOS (mV) 5.5 0 -1 -2 8 25° 85°C -40°C 6 4 2 0 -3 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2 4 6 8 10 12 14 VCM (V) SUPPLY VOLTAGE (V) Figure 15. VOS vs. VCM, VS = 5V Figure 16. Bias Current vs. VSUPPLY 3 0.1 TJ = -40°C to 85°C 2 1 VIN (mV) IOFFSET (µA) 0.08 0.06 -40°C 25°C 0 -1 85°C 0.04 -2 RL = 1k: 0.02 2 4 6 8 10 12 14 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 VSUPPLY (V) VOUT (V) Figure 17. Offset Current vs. VSUPPLY Figure 18. VOUT vs. VIN Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 9 LMH6672 SNOS957H – APRIL 2001 – REVISED AUGUST 2014 www.ti.com Typical Performance Characteristics (continued) Av = + 2V/V -45 2 -55 VIN (mV) 1 HARMONIC DISTORTION (dBc) 3 -40°C 25°C 0 -1 85°C -2 VS = ±6V f = 1 MHz VOUT = 2 VPP -65 -75 -85 2ND -95 -105 RL = 25: 3RD -115 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 0 100 300 400 500 Figure 20. Harmonic Distortion vs. Load Figure 19. VOUT vs. VIN -45 -45 HARMONIC DISTORTION (dBc) VS = ±2.5V f = 1 MHz -55 HARMONIC DISTORTION (dBc) 200 LOAD RESISTANCE VOUT (V) VOUT = 2 VPP -65 -75 3RD -85 -95 2ND -105 VS = ±6V f = 1 MHz -55 -65 -75 3RD -85 -95 -105 2ND -115 -115 0 200 300 400 500 0 1 2 3 4 5 6 7 8 9 10 11 OUTPUT VOLTAGE PEAK TO PEAK Figure 21. Harmonic Distortion vs. Load Figure 22. Harmonic Distortion vs. Output Voltage -35 -45 VS = ±6V -45 f = 1 MHz -55 HARMONIC DISTORTION (dBc) HARMONIC DISTORTION (dBc) LOAD RESISTANCE RL = 25: -55 -65 2ND -75 -85 -95 3RD -105 0 10 100 1 2 3 4 5 6 7 8 -65 -75 2ND -85 -95 3RD -105 -115 0.0 9 10 11 VS = ±2.5V f = 1 MHz 0.5 1.0 1.5 2.0 2.5 3.0 OUTPUT VOLTAGE PEAK TO PEAK OUTPUT VOLTAGE PEAK TO PEAK Figure 23. Harmonic Distortion vs. Output Voltage Figure 24. Harmonic Distortion vs. Output Voltage Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 LMH6672 www.ti.com SNOS957H – APRIL 2001 – REVISED AUGUST 2014 Typical Performance Characteristics (continued) Av = + 2V/V -55 VS = ±2.5V f = 1 MHz -55 HARMONIC DISTORTION (dBc) HARMONIC DISTORTION (dBc) -45 RL = 25: -65 -75 2ND -85 -95 3RD -105 VS = ±6V -65 f = 100 kHz -75 -85 -95 2ND -105 -115 3RD -115 0.0 -125 0.5 1.0 2.0 1.5 2.5 3.0 0 1 2 3 4 5 6 7 8 9 10 11 OUTPUT VOLTAGE PEAK TO PEAK OUTPUT VOLTAGE PEAK TO PEAK Figure 25. Harmonic Distortion vs. Output Voltage Figure 26. Harmonic Distortion vs. Output Voltage -20 VS = ±6V f = 100 kHz -45 HARMONIC DISTORTION (dBc) HARMONIC DISTORTION (dBc) -35 RL = 25: -55 -65 -75 -85 -95 2ND 3RD -105 -115 VS = ±6V -30 VOUT = 2 VPP -40 -50 -60 -70 2ND -80 -90 -100 -110 3RD -125 0 1 2 3 4 5 6 7 8 9 -120 0.1 10 11 OUTPUT VOLTAGE PEAK TO PEAK 1 10 FREQUENCY (MHz) Figure 27. Harmonic Distortion vs. Output Voltage Figure 28. Harmonic Distortion vs. Frequency -30 -40 -20 VS = ±6V HARMONIC DISTORTION (dBc) HARMONIC DISTORTION (dBc) -20 100 RL = 25: VOUT = 2 VPP -50 -60 -70 2ND -80 -90 -100 3RD -110 -120 0.1 -30 VS = ±2.5V VOUT = 2 VPP -40 -50 -60 3RD -70 -80 -90 2ND -100 -110 -120 1 10 FREQUENCY (MHz) 100 0.1 1 10 100 FREQUENCY (MHz) Figure 29. Harmonic Distortion vs. Frequency Figure 30. Harmonic Distortion vs. Frequency Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 11 LMH6672 SNOS957H – APRIL 2001 – REVISED AUGUST 2014 www.ti.com Typical Performance Characteristics (continued) Av = + 2V/V -30 -40 VS = ±2.5V RL = 25: VOUT = 2 VPP -50 2ND 1 V/DIV HARMONIC DISTORTION (dBc) -20 -60 -70 0 -80 -90 -100 -110 -120 0.1 3RD 1 10 FREQUENCY (MHz) 20 ns/DIV 100 Figure 32. Pulse Response, VS= ±6V 1 V/DIV 40 mV/DIV Figure 31. Harmonic Distortion vs. Frequency 0 0 20 ns/DIV 20 ns/DIV Figure 33. Pulse Response, VS= ±2.5V, ±6V Figure 34. Pulse Response, AVCL = −1, VS= ±6V 7 Vs = 6 V 6 Vs = ±2.5 V Vs = -6 V GAIN (dB) 40 mV/DIV 4 6.5 3 6.4 2 6.3 6.2 1 0 6.1 0.1 dB/div 6 -1 20 ns/DIV 6.7 6.6 5 0 6.8 -2 5.9 -3 0.1 5.8 1 10 100 FREQUENCY (MHz) Figure 35. Pulse Response, AVCL = −1, VS= ±2.5V, ±6V 12 Submit Documentation Feedback Figure 36. Frequency Response Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 LMH6672 www.ti.com SNOS957H – APRIL 2001 – REVISED AUGUST 2014 Typical Performance Characteristics (continued) Av = + 2V/V 26 23 20 17 GAIN (dB) 13 MHz 14 11 8 12V 5 2 -1 5V -4 100k 1M 10M 100M FREQUENCY (Hz) Figure 38. Frequency Response, AVCL = +10V/V 120 120 100 100 80 80 CMRR (dB) CMRR (dB) Figure 37. Frequency Response, AVCL = +5V/V 60 60 40 40 20 20 0 0 1k 10k 100k 1M 10M 1k 100M 10k FREQUENCY (Hz) 100 90 90 80 80 70 70 60 50 40 40 20 20 10 10 100k 100M 60 30 10k 10M 50 30 1k 1M Figure 40. CMRR vs. Frequency, Vs = 5V 100 PSRR (dB) PSRR (dB) Figure 39. CMRR vs. Frequency, Vs = 12V 0 100 100k FREQUENCY (Hz) 1M 0 100 10M 1k 10k 100k 1M 10M FREQUENCY (Hz) FREQUENCY (Hz) Figure 41. PSRR+ vs. Frequency, VS = 5V and 12V Figure 42. PSRR− vs. Frequency VS = 5V and 12V Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 13 LMH6672 SNOS957H – APRIL 2001 – REVISED AUGUST 2014 www.ti.com Typical Performance Characteristics (continued) Av = + 2V/V 100 10 10 en CURRENT NOISE (pA/ Hz) VOLTAGE NOISE (nV/ Hz) 100 in 1 100 1k 10k 100k 1M 1 10M FREQUENCY (Hz) Figure 43. en & in vs. Frequency, VS = 5V and 12V 14 Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 LMH6672 www.ti.com SNOS957H – APRIL 2001 – REVISED AUGUST 2014 7 Detailed Description 7.1 Functional Block Diagram + + 1/2 LMH6672 RO 12.5 Rf1 1:N VIN (VPP) AV . VIN Rg RL = 100: VOUT (1.2) Rf2 Note: Supply and Bypassing not shown. RO 12.5 - 1/2 LMH6672 + Figure 44. LMH6672 Block Diagram Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 15 LMH6672 SNOS957H – APRIL 2001 – REVISED AUGUST 2014 www.ti.com 8 Power Supply Recommendations 8.1 Thermal Management The LMH6672 is a high-speed, high power, dual operational amplifier with a very high slew rate and very low distortion. For ease of use, it uses conventional voltage feedback. These characteristics make the LMH6672 ideal for applications where driving low impedances of 25 to 100 Ω such as xDSL and active filters. A class AB output stage allows the LMH6672 to deliver high currents to low impedance loads with low distortion while consuming low quiescent supply current. For most op-amps, class AB topology means that internal power dissipation is rarely an issue, even with the trend to smaller surface mount packages. However, the LMH6672 has been designed for applications where high levels of power dissipation may be encountered. Several factors contribute to power dissipation and consequently higher junction temperatures. These factors need to be well understood if the LMH6672 is to perform to specifications in all applications. This section will examine the typical application shown in Figure 44 as an example. Because both amplifiers are in a single package, the calculations are for the total power dissipated by both amplifiers. There are two separate contributors to the internal power dissipation: 1. The product of the supply voltage and the quiescent current when no signal is being delivered to the external load. 2. The additional power dissipated while delivering power to the external load. The first of these components appears easy to calculate simply by inspecting the data sheet. The typical quiescent supply current for this part is 7.2 mA per amplifier. Therefore, with a ±6 volt supply, the total power dissipation is: PD = VS × 2 × lQ = 12 × (14.4×10-3) = 173 mW where • (VS = VCC + VEE) (1) With a thermal resistance of 172°C/W for the SOIC package, this level of internal power dissipation will result in a junction temperature (TJ) of 30°C above ambient. Using the worst-case maximum supply current of 18 mA and an ambient of 85°C, a similar calculation results in a power dissipation of 216 mW, or a TJ of 122°C. This is approaching the maximum allowed TJ of 150°C before a signal is applied. Fortunately, in normal operation, this term is reduced, for reasons that will soon be explained. The second contributor to high TJ is the power dissipated internally when power is delivered to the external load. This cause of temperature rise is more difficult to calculate, even when the actual operating conditions are known. To maintain low distortion, in a Class AB output stage, an idle current, IQ, is maintained through the output transistors when there is little or no output signal. In the LMH6672, about 4.8 mA of the total quiescent supply current of 14.4 mA flows through the output stages. Under normal large signal conditions, as the output voltage swings positive, one transistor of the output pair will conduct the load current, while the other transistor shuts off, and dissipates no power. During the negative signal swing this situation is reversed, with the lower transistor sinking the load current while the upper transistor is cut off. The current in each transistor will approximate a half wave rectified version of the total load current. Because the output stage idle current is now routed into the load, 4.8 mA can be subtracted from the quiescent supply current when calculating the quiescent power when the output is driving a load. 16 Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 LMH6672 www.ti.com SNOS957H – APRIL 2001 – REVISED AUGUST 2014 Thermal Management (continued) The power dissipation caused by driving a load in a DSL application, using a 1:2 turns ratio transformer driving 20 mW into the subscriber line and 20 mW into the back termination resistors, can be calculated as follows: PDRIVER = PTOT – (PTERM + PLINE) Where • • • • • PDRIVER is the LMH6672 power dissipation PTOT is the total power drawn from the power supply PTERM is the power dissipated in the back termination resistors PLINE is the power sent into the subscriber line At full specified power, PTERM = PLINE = 20 mW, PTOT = VS × IS (2) In this application, VS = 12V. IS = IQ + AVG |IOUT| IQ = the LMH6672 quiescent current minus the output stage idle current. IQ = 14.4 – 4.8 = 9.6 mA (3) (4) (5) Average (AVG) |IOUT| for a full-rate ADSL CPE application, using a 1:2 turns ratio transformer, is mA RMS. (40 mW/50:) = 28.28 For a Gaussian signal, which the DMT ADSL signal approximates, AVG |IOUT| = 2/S x IRMS = 22.6 mA. Therefore, PTOT = (22.6 mA + 9.6 mA) × 12V = 386 mW and PDRIVER is 40 mW lower or 346 mW. In the SOIC package, with a θJA of 172°C/W, this causes a temperature rise of 60°C. With an ambient temperature at the maximum recommended 85°C, the TJ is at 145°C, which is below the specified 150°C maximum. Even if it is assumed that the absolute maximum IS over temperature of 18 mA, when the IQ is scaled up proportionally to 7 mA, the PDRIVER only goes up by 17 mW causing a 62°C rise from ambient to 147°C. Although very few CPE applications will ever operate in an environment as hot as 85°C, if a lower TJ is desired or the LMH6672 is to be used in an application where the power dissipation is higher, the SO PowerPAD (DDA) package provides a much lower RθJA of only 58.6° C/W. Using the same PDRIVER as above, we find that the temperature rise is only about 21°C, resulting in TJ of 106°C with 85°C ambient. NOTE Since the exposed PAD (or DAP) of the SO PowerPAD (DDA) package is internally floating, the footprint for DAP could be connected to ground plane in PCB for better heat dissipation. Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 17 LMH6672 SNOS957H – APRIL 2001 – REVISED AUGUST 2014 www.ti.com 9 Device and Documentation Support 9.1 Trademarks All trademarks are the property of their respective owners. 9.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 9.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 10 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 18 Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6672 PACKAGE OPTION ADDENDUM www.ti.com 31-Jul-2014 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) LMH6672MA/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMH66 72MA LMH6672MAX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMH66 72MA LMH6672MR/NOPB ACTIVE SO PowerPAD DDA 8 95 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 LMH66 72MR LMH6672MRX/NOPB ACTIVE SO PowerPAD DDA 8 2500 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 LMH66 72MR (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 31-Jul-2014 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 31-Jul-2014 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LMH6672MAX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LMH6672MRX/NOPB SO Power PAD DDA 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 31-Jul-2014 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMH6672MAX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LMH6672MRX/NOPB SO PowerPAD DDA 8 2500 367.0 367.0 35.0 Pack Materials-Page 2 PACKAGE OUTLINE DDA0008A PowerPAD TM SOIC - 1.7 mm max height SCALE 2.400 PLASTIC SMALL OUTLINE C 6.2 TYP 5.8 SEATING PLANE PIN 1 ID AREA A 0.1 C 6X 1.27 8 1 2X 3.81 5.0 4.8 NOTE 3 4 5 B 8X 4.0 3.8 NOTE 4 0.51 0.31 0.25 1.7 MAX C A B 0.25 TYP 0.10 SEE DETAIL A 5 4 EXPOSED THERMAL PAD 0.25 GAGE PLANE 2.34 2.24 8 1 0 -8 0.15 0.00 1.27 0.40 DETAIL A 2.34 2.24 TYPICAL 4218825/A 05/2016 PowerPAD is a trademark of Texas Instruments. NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per side. 4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side. 5. Reference JEDEC registration MS-012. www.ti.com EXAMPLE BOARD LAYOUT DDA0008A PowerPAD TM SOIC - 1.7 mm max height PLASTIC SMALL OUTLINE (2.95) NOTE 9 SOLDER MASK DEFINED PAD (2.34) SOLDER MASK OPENING 8X (1.55) SEE DETAILS 1 8 8X (0.6) SYMM (1.3) TYP (2.34) SOLDER MASK OPENING (4.9) NOTE 9 6X (1.27) 5 4 (R0.05) TYP METAL COVERED BY SOLDER MASK SYMM ( 0.2) TYP VIA (1.3) TYP (5.4) LAND PATTERN EXAMPLE SCALE:10X 0.07 MIN ALL AROUND 0.07 MAX ALL AROUND SOLDER MASK OPENING METAL SOLDER MASK OPENING METAL UNDER SOLDER MASK SOLDER MASK DEFINED NON SOLDER MASK DEFINED SOLDER MASK DETAILS 4218825/A 05/2016 NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site. 8. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature numbers SLMA002 (www.ti.com/lit/slma002) and SLMA004 (www.ti.com/lit/slma004). 9. Size of metal pad may vary due to creepage requirement. 10. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown on this view. It is recommended that vias under paste be filled, plugged or tented. www.ti.com EXAMPLE STENCIL DESIGN DDA0008A PowerPAD TM SOIC - 1.7 mm max height PLASTIC SMALL OUTLINE (2.34) BASED ON 0.125 THICK STENCIL 8X (1.55) (R0.05) TYP 1 8 8X (0.6) (2.34) BASED ON 0.125 THICK STENCIL SYMM 6X (1.27) 5 4 METAL COVERED BY SOLDER MASK SYMM (5.4) SEE TABLE FOR DIFFERENT OPENINGS FOR OTHER STENCIL THICKNESSES SOLDER PASTE EXAMPLE EXPOSED PAD 100% PRINTED SOLDER COVERAGE BY AREA SCALE:10X STENCIL THICKNESS SOLDER STENCIL OPENING 0.1 0.125 0.150 0.175 2.62 X 2.62 2.34 X 2.34 (SHOWN) 2.14 X 2.14 1.98 X 1.98 4218825/A 05/2016 NOTES: (continued) 11. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. 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