IRF7413PbF-1
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
30
V
0.011
52
13
(@TA = 25°C)
A
A
D
S
1
8
Ω
S
2
7
D
nC
S
3
6
D
G
4
5
D
A
SO-8
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7413PbF-1
SO-8
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Tube/Bulk
Tape and Reel
Quantity
95
4000
Orderable Part Number
IRF7413PbF-1
IRF7413TRPbF-1
Absolute Maximum Ratings
Symbol
Parameter
VDS
Max
Units
Power Dissipation
30
± 20
13
9.2
58
2.5
EAS
Linear Derating Factor
Single Pulse Avalanche Energency
0.02
260
W
mW/°C
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
°C
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
c
d
e
V
A
Thermal Resistance Ratings
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
g
RθJA
1
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Typ
Max
–––
20
–––
50
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Units
°C/W
November 19, 2013
IRF7413PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min
Typ
30
–––
–––
–––
1.0
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.034 –––
––– 0.011
––– 0.018
–––
3.0
–––
–––
–––
12
–––
25
––– -100
–––
100
52
79
6.1
9.2
16
23
–––
3.7
8.6
–––
50
–––
52
–––
46
–––
1800 –––
680
–––
240
–––
Max Units
Conditions
V VGS = 0V, I D = 250μA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 7.3A
Ω
VGS = 4.5V, ID = 3.7A
V VDS = VGS, ID = 250μA
S VDS = 10V, ID = 3.7A
VDS = 30V, VGS = 0V
μA
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
nA
VGS = 20V
ID = 7.3A
nC VDS = 24V
VGS = 10V, See Fig. 6 and 9
Ω
VDD = 15V
ID = 7.3A
ns RG = 6.2 Ω
RG = 2.0Ω, See Fig. 10
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
f
f
f
f
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Min. Typ. Max. Units
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
c
–––
–––
3.1
–––
–––
58
–––
–––
–––
–––
74
200
1.0
110
300
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 7.3A, VGS = 0V
TJ = 25°C, IF = 7.3A
di/dt = 100A/μs
e
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
Starting TJ = 25°C, L = 9.8mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
RG = 25Ω, IAS =7.3A. (See Figure 12)
2
T J ≤ 150°C
Surface mounted on FR-4 board
Rθ is measured at TJ approximately 90°C
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November 19, 2013
e
IRF7413PbF-1
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
20μs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
3.0V
10
20μs PULSE WIDTH
TJ = 150°C
A
1
0.1
10
1
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 150°C
TJ = 25°C
10
V DS = 10V
20μs PULSE WIDTH
1
3.0
3.5
4.0
A
4.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
10
V DS, Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
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I D = 7.3A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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A
100 120 140 160
November 19, 2013
IRF7413PbF-1
3200
V GS , Gate-to-Source Voltage (V)
2800
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = C ds + C gd
Coss
12
1600
1200
Crss
800
V DS = 24V
V DS = 15V
16
2400
2000
I D = 7.3A
400
0
1
10
100
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
10
VDS , Drain-to-Source Voltage (V)
30
40
50
60
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 25°C
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
20
TJ = 150°C
100
10
VGS = 0V
1
0.4
1.2
2.0
2.8
A
3.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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100us
10
1ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
10ms
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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November 19, 2013
A
IRF7413PbF-1
V DS
QG
10V
QGS
VGS
QGD
D.U.T.
RG
VG
RD
+
- VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
50KΩ
12V
90%
.2μF
.3μF
D.U.T.
+
V
- DS
10%
VGS
VGS
3mA
td(on)
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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November 19, 2013
15V
L
VDS
D.U.T
RG
IAS
20V
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRF7413PbF-1
600
TOP
500
BOTTOM
ID
3.3A
6.0A
7.3A
400
300
200
100
0
25
50
75
100
125
150
Starting T J, Junction Temperature ( oC)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
6
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November 19, 2013
IRF7413PbF-1
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
Period
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
7
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November 19, 2013
IRF7413PbF-1
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
DIM
B
5
A
8
6
7
6
2
3
.0688
1.35
1.75
4
A1 .0040
0.25
.0098
0.10
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
A
e1
6X
e
e1
0.25 [.010]
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
A1
8X b
MAX
.013
H
1
MIN
.0532
b
5
0.25 [.010]
MILLIMETERS
MAX
A
E
INCHES
MIN
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET)
INT ERNAT IONAL
RECTIFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = ASS EMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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November 19, 2013
IRF7413PbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
Moisture Sensitivity Level
(per JEDE C JE S D47F
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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November 19, 2013