DMTH4005SK3Q Green 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) Max ID TC = +25°C 40V 4.5mΩ @ VGS = 10V 95A Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low RDS(ON) – Minimizes Power Losses Low Qg – Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET has been designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Engine Management Systems Body Control Electronics DC-DC Converters Case: TO252 (DPAK) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) D D TO252 (DPAK) G D G S Top View Pin Out Top View S Internal Schematic Ordering Information (Note 5) Part Number DMTH4005SK3Q-13 Notes: Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H4005S YYWW DMTH4005SK3Q Document number: DS38661 Rev. 2 - 2 = Manufacturer’s Marking H4005S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) 1 of 7 www.diodes.com August 2016 © Diodes Incorporated DMTH4005SK3Q Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TC = +25°C (Note 10) TC = +100°C Continuous Drain Current (Note 7) Maximum Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH Value 40 ±20 Units V V 95 ID A IS IDM IAS EAS 73 83 150 32.5 52.8 A A A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 2.1 38 100 1.5 -55 to +175 Units W °C/W W °C/W °C TC = +25C Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Electrical Characteristics TC = +25°C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: TA = +25°C Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 1 ±100 V µA nA VGS = 0V, ID = 1mA VDS = 32V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 2 3.6 0.9 4 4.5 V mΩ V VDS = VGS, ID = 250µA VGS = 10V, ID = 50A VGS = 0V, IS = 50A Ciss Coss Crss RG Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 3,062 902.2 179.2 0.67 49.1 10.3 13 8.7 6.8 18.6 7.3 31.8 26.5 pF VDS = 20V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC Test Condition VDD = 20V, ID = 50A, ns VDD = 20V, VGS = 10V, ID = 50A, RG = 3Ω ns nC IF = 50A, di/dt = 100A/μs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 10. Package limited. DMTH4005SK3Q Document number: DS38661 Rev. 2 - 2 2 of 7 www.diodes.com August 2016 © Diodes Incorporated DMTH4005SK3Q 50.0 20 VGS = 10.0V 40.0 VGS = 5.0V VGS=4.5V 35.0 30.0 25.0 20.0 15.0 VGS = 4.0V 16 14 12 10 8 5.0 85℃ 6 175℃ 25℃ 2 VGS = 3.5V -55℃ 0 0.0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 6.00 5.00 4.00 VGS = 10.0V 3.00 2.00 1.00 0.00 0 5 10 15 20 25 30 35 40 45 0 5 50 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 5 20 18 16 14 12 10 8 6 ID = 50A 4 2 0 2 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 0.008 2.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 125℃ 150℃ 4 10.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) VDS = 5.0V 18 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 45.0 VGS = 10V 0.007 150℃ 175℃ 0.006 0.005 125℃ 0.004 85℃ 0.003 25℃ -55℃ 0.002 0.001 0 10 20 30 40 50 60 70 80 90 100 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMTH4005SK3Q Document number: DS38661 Rev. 2 - 2 3 of 7 www.diodes.com 2 1.8 1.6 1.4 1.2 1 0.8 VGS = 10V, ID = 50A 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature August 2016 © Diodes Incorporated 0.008 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMTH4005SK3Q 0.006 0.004 VGS = 10V, ID = 50A 0.002 0 -50 -25 3.5 3 ID = 1mA 2.5 2 ID = 250μA 1.5 1 0.5 0 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) -50 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Temperature Figure 7. On-Resistance Variation with Temperature 100 10000 90 f = 1MHz VGS = 0V CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) -25 80 70 60 50 TA = 85oC 40 TA = 125oC 30 TA = 150oC 20 TA = 150oC 10 TA = 25oC Ciss 1000 Coss Crss 100 TA = -55oC 10 0 0 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) 0 1.2 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) 40 Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 10 1000 RDS(ON) Limited PW =10µs PW =1µs ID, DRAIN CURRENT (A) VGS (V) 8 6 4 VDS = 20V, ID = 50A 2 100 PW =100µs 10 PW =1ms PW =10ms PW =100ms 1 TJ(Max) = 175℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS= 10V PW =1s 0.1 0 0 10 20 30 Qg (nC) 40 50 Document number: DS38661 Rev. 2 - 2 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Figure 11. Gate Charge DMTH4005SK3Q 0.1 4 of 7 www.diodes.com August 2016 © Diodes Incorporated DMTH4005SK3Q r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 0.1 D=0.9 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJC(t) = r(t) * RθJC RθJC = 1.5℃/W Duty Cycle, D = t1 / t2 D=0.005 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMTH4005SK3Q Document number: DS38661 Rev. 2 - 2 5 of 7 www.diodes.com August 2016 © Diodes Incorporated DMTH4005SK3Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) E A b3 7° ± 1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 2.74REF TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 C Y X DMTH4005SK3Q Document number: DS38661 Rev. 2 - 2 6 of 7 www.diodes.com August 2016 © Diodes Incorporated DMTH4005SK3Q PORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com DMTH4005SK3Q Document number: DS38661 Rev. 2 - 2 7 of 7 www.diodes.com August 2016 © Diodes Incorporated