MCNIX MX25U1635EZNI10G 16m-bit [x 1/x 2/x 4] 1.8v cmos mxsmioâ® (serial multi i/o) flash memory Datasheet

MX25U1635E
MX25U1635E
DATASHEET
P/N: PM1472
1
REV. 1.9, NOV. 08, 2013
MX25U1635E
Contents
1. FEATURES............................................................................................................................................................... 6
2. GENERAL DESCRIPTION...................................................................................................................................... 8
Table 1. Additional Feature Comparison.............................................................................................................. 9
3. PIN CONFIGURATIONS ........................................................................................................................................ 10
4. PIN DESCRIPTION................................................................................................................................................. 10
5. BLOCK DIAGRAM.................................................................................................................................................. 11
6. DATA PROTECTION............................................................................................................................................... 12
Table 2. Protected Area Sizes............................................................................................................................ 13
Table 3. 4K-bit Secured OTP Definition.............................................................................................................. 13
7. Memory Organization............................................................................................................................................ 14
Table 4. Memory Organization........................................................................................................................... 14
8. DEVICE OPERATION............................................................................................................................................. 15
Figure 1. Serial Modes Supported..................................................................................................................... 15
8-1. Quad Peripheral Interface (QPI) Read Mode................................................................................................ 16
Figure 2. Enable QPI Sequence (Command 35H)............................................................................................. 16
Figure 3. Reset QPI Mode (Command F5H)...................................................................................................... 17
Figure 4. Fast QPI Read Mode (FASTRDQ) (Command EBH) ........................................................................ 17
9. COMMAND DESCRIPTION.................................................................................................................................... 18
Table 5. Command Set....................................................................................................................................... 18
9-1. Write Enable (WREN)................................................................................................................................... 20
9-2. Write Disable (WRDI).................................................................................................................................... 20
9-3. Read Identification (RDID)............................................................................................................................ 20
9-4. Read Status Register (RDSR)...................................................................................................................... 20
Figure 5. Program/ Erase flow with read array data........................................................................................... 21
Figure 6. Program/ Erase flow without read array data (read P_FAIL/E_FAIL flag)........................................... 22
Figure 7. WRSR flow.......................................................................................................................................... 23
Table 6. Status Register..................................................................................................................................... 24
9-5. Write Status Register (WRSR)...................................................................................................................... 25
Table 7. Protection Modes.................................................................................................................................. 25
9-6. Read Data Bytes (READ).............................................................................................................................. 26
9-7. Read Data Bytes at Higher Speed (FAST_READ)........................................................................................ 26
9-8. 2 x I/O Read Mode (2READ)......................................................................................................................... 27
9-9. 4 x I/O Read Mode (4READ)......................................................................................................................... 27
9-10. Burst Read.................................................................................................................................................. 28
Table 8. Wrap Around Definition Table............................................................................................................... 28
Figure 8. SPI Mode............................................................................................................................................ 28
Figure 9. QPI Mode............................................................................................................................................ 28
P/N: PM1472
2
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-11. Performance Enhance Mode....................................................................................................................... 29
9-12. Performance Enhance Mode Reset (FFh).................................................................................................. 29
9-13. Sector Erase (SE)....................................................................................................................................... 29
9-14. Block Erase (BE32K).................................................................................................................................. 30
9-15. Block Erase (BE)......................................................................................................................................... 30
9-16. Chip Erase (CE).......................................................................................................................................... 30
9-17. Page Program (PP)..................................................................................................................................... 31
9-18. 4 x I/O Page Program (4PP)....................................................................................................................... 31
9-19. Deep Power-down (DP).............................................................................................................................. 32
9-20. Release from Deep Power-down (RDP), Read Electronic Signature (RES)............................................... 32
9-21. Read Electronic Manufacturer ID & Device ID (REMS).............................................................................. 33
9-22. QPI ID Read (QPIID)................................................................................................................................... 33
Table 9. ID Definitions ....................................................................................................................................... 33
9-23. Enter Secured OTP (ENSO)....................................................................................................................... 34
9-24. Exit Secured OTP (EXSO).......................................................................................................................... 34
9-25. Read Security Register (RDSCUR)............................................................................................................ 34
Table 10. Security Register Definition................................................................................................................ 35
9-26. Write Security Register (WRSCUR)............................................................................................................ 35
9-27. Write Protection Selection (WPSEL)........................................................................................................... 36
Figure 10. BP and SRWD if WPSEL=0.............................................................................................................. 36
Figure 11. The individual block lock mode is effective after setting WPSEL=1.................................................. 37
Figure 12. WPSEL Flow..................................................................................................................................... 38
9-28. Single Block Lock/Unlock Protection (SBLK/SBULK)................................................................................. 39
Figure 13. Block Lock Flow................................................................................................................................ 39
Figure 14. Block Unlock Flow............................................................................................................................. 40
9-29. Read Block Lock Status (RDBLOCK)......................................................................................................... 41
9-30. Gang Block Lock/Unlock (GBLK/GBULK)................................................................................................... 41
9-31. Program/Erase Suspend/Resume.............................................................................................................. 41
9-32. Erase Suspend............................................................................................................................................ 42
9-33. Program Suspend....................................................................................................................................... 42
9-34. Write-Resume............................................................................................................................................. 43
9-35. No Operation (NOP).................................................................................................................................... 43
9-36. Software Reset (Reset-Enable (RSTEN) and Reset (RST))....................................................................... 43
9-37. Reset Quad I/O (RSTQIO).......................................................................................................................... 43
9-38. Read SFDP Mode (RDSFDP)..................................................................................................................... 44
Figure 15. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence.................................................. 44
Table 11. Signature and Parameter Identification Data Values.......................................................................... 45
Table 12. Parameter Table (0): JEDEC Flash Parameter Tables....................................................................... 46
Table 13. Parameter Table (1): Macronix Flash Parameter Tables.................................................................... 48
10. POWER-ON STATE.............................................................................................................................................. 50
P/N: PM1472
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REV. 1.9, NOV. 08, 2013
MX25U1635E
11. ELECTRICAL SPECIFICATIONS......................................................................................................................... 51
11-1. Absolute Maximum Ratings......................................................................................................................... 51
Figure 16. Maximum Negative Overshoot Waveform........................................................................................ 51
11-2. Capacitance................................................................................................................................................ 51
Figure 17. Maximum Positive Overshoot Waveform.......................................................................................... 51
Figure 18. Input Test Waveforms and Measurement Level................................................................................ 52
Figure 19. Output Loading................................................................................................................................. 52
Table 14. DC Characteristics.............................................................................................................................. 53
Table 15. AC Characteristics.............................................................................................................................. 54
12. Timing Analysis................................................................................................................................................... 55
Figure 20. Serial Input Timing............................................................................................................................ 55
Figure 21. Output Timing.................................................................................................................................... 55
Figure 22. WP# Setup Timing and Hold Timing during WRSR when SRWD=1................................................. 56
Figure 23. Write Enable (WREN) Sequence (Command 06) (SPI Mode).......................................................... 56
Figure 24. Write Enable (WREN) Sequence (Command 06) (QPI Mode)......................................................... 56
Figure 25. Write Disable (WRDI) Sequence (Command 04) (SPI Mode).......................................................... 57
Figure 26. Write Disable (WRDI) Sequence (Command 04) (QPI Mode).......................................................... 57
Figure 27. Read Identification (RDID) Sequence (Command 9F) (SPI mode only)........................................... 57
Figure 28. Read Status Register (RDSR) Sequence (Command 05) (SPI Mode)............................................. 58
Figure 29. Read Status Register (RDSR) Sequence (Command 05) (QPI Mode)............................................ 58
Figure 30. Write Status Register (WRSR) Sequence (Command 01) (SPI Mode)........................................... 58
Figure 31. Write Status Register (WRSR) Sequence (Command 01) (QPI Mode)........................................... 59
Figure 32. Read Data Bytes (READ) Sequence (Command 03) (SPI Mode only) (33MHz)............................. 59
Figure 33. Read at Higher Speed (FAST_READ) Sequence (Command 0B) (SPI Mode) (104MHz).............. 60
Figure 34. Read at Higher Speed (FAST_READ) Sequence (Command 0B) (QPI Mode) (84MHz)................ 60
Figure 35. 2 x I/O Read Mode Sequence (Command BB) (SPI Mode only) (84MHz)....................................... 61
Figure 36. 4 x I/O Read Mode Sequence (Command EB) (SPI Mode) (104MHz)............................................. 61
Figure 37. 4 x I/O Read enhance performance Mode Sequence (Command EB) (SPI Mode) (104MHz)......... 62
Figure 38. 4 x I/O Read enhance performance Mode Sequence (Command EB) (QPI Mode) (104MHz)........ 63
Figure 39. Page Program (PP) Sequence (Command 02) (SPI Mode)............................................................ 63
Figure 40. Page Program (PP) Sequence (Command 02) (QPI Mode)............................................................ 64
Figure 41. 4 x I/O Page Program (4PP) Sequence (Command 38) (SPI Mode only)....................................... 64
Figure 42. Sector Erase (SE) Sequence (Command 20) (SPI Mode)............................................................... 65
Figure 43. Sector Erase (SE) Sequence (Command 20) (QPI Mode).............................................................. 65
Figure 44. Block Erase 32KB (BE32K) Sequence (Command 52) (SPI Mode)................................................ 65
Figure 45. Block Erase 32KB (BE32K) Sequence (Command 52) (QPI Mode)................................................ 65
Figure 46. Block Erase (BE) Sequence (Command D8) (SPI Mode)................................................................ 66
Figure 47. Block Erase (BE) Sequence (Command D8) (QPI Mode)............................................................... 66
Figure 48. Chip Erase (CE) Sequence (Command 60 or C7) (SPI Mode)........................................................ 66
Figure 49. Chip Erase (CE) Sequence (Command 60 or C7) (QPI Mode)....................................................... 66
P/N: PM1472
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REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 50. Deep Power-down (DP) Sequence (Command B9) (SPI Mode)..................................................... 67
Figure 51. Deep Power-down (DP) Sequence (Command B9) (QPI Mode)..................................................... 67
Figure 52. RDP and Read Electronic Signature (RES) Sequence (Command AB) (SPI Mode)....................... 67
Figure 53. Release from Deep Power-down (RDP) Sequence (Command AB) (SPI Mode)............................ 68
Figure 54. Release from Deep Power-down (RDP) Sequence (Command AB) (QPI Mode)............................ 68
Figure 55. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90) (SPI Mode only)... 69
Figure 56. Read Security Register (RDSCUR) Sequence (Command 2B) (SPI Mode).................................... 70
Figure 57. Read Security Register (RDSCUR) Sequence (Command 2B) (QPI Mode).................................... 70
Figure 58. Write Security Register (WRSCUR) Sequence (Command 2F) (SPI Mode).................................... 71
Figure 59. Write Security Register (WRSCUR) Sequence (Command 2F) (QPI Mode).................................... 71
Figure 60. Word Read Quad I/O (W4READ) Sequence (Command E7) (SPI Mode only, 84MHz)................... 72
Figure 61. Performance Enhance Mode Reset for Fast Read Quad I/O (SPI Mode)........................................ 72
Figure 62. Performance Enhance Mode Reset for Fast Read Quad I/O (QPI Mode)........................................ 73
Figure 63. Reset Sequence (SPI mode)............................................................................................................ 73
Figure 64. Reset Sequence (QPI mode)............................................................................................................ 73
Figure 65. Enable Quad I/O Sequence.............................................................................................................. 73
Figure 66. Suspend to Read Latency................................................................................................................. 74
Figure 67. Resume to Read Latency................................................................................................................. 74
Figure 68. Resume to Suspend Latency............................................................................................................ 74
Figure 69. Software Reset Recovery................................................................................................................. 74
Figure 70. Power-up Timing............................................................................................................................... 75
Table 16. Power-Up Timing and VWI Threshold................................................................................................ 75
12-1. Initial Delivery State.................................................................................................................................... 75
13. OPERATING CONDITIONS.................................................................................................................................. 76
Figure 71. AC Timing at Device Power-Up......................................................................................................... 76
Figure 72. Power-Down Sequence.................................................................................................................... 77
14. ERASE AND PROGRAMMING PERFORMANCE............................................................................................... 78
15. DATA RETENTION .............................................................................................................................................. 78
16. LATCH-UP CHARACTERISTICS......................................................................................................................... 78
17. ORDERING INFORMATION................................................................................................................................. 79
18. PART NAME DESCRIPTION................................................................................................................................ 80
19. PACKAGE INFORMATION................................................................................................................................... 81
20. REVISION HISTORY ............................................................................................................................................ 85
P/N: PM1472
5
REV. 1.9, NOV. 08, 2013
MX25U1635E
16M-BIT [x 1/x 2/x 4] 1.8V CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY
1. FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure or 4,194,304 x 4 bits (four I/O
read mode) structure
• Equal Sectors with 4K byte each, or Equal Blocks with 32K byte each or Equal Blocks with 64K byte each
- Any Block can be erased individually
• Single Power Supply Operation
- 1.65 to 2.0 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
• Low Vcc write inhibit is from 1.0V to 1.4V
PERFORMANCE
• High Performance
- Fast read for SPI mode
- 1 I/O: 104MHz with 8 dummy cycles
- 2 I/O: 84MHz with 4 dummy cycles, equivalent to 168MHz
- 4 I/O: 104MHz with 6 dummy cycles, equivalent to 416MHz
- Fast read for QPI mode
- 4 I/O: 84MHz with 4 dummy cycles, equivalent to 336MHz
- 4 I/O: 104MHz with 6 dummy cycles, equivalent to 416MHz
- Fast program time: 1.2ms(typ.) and 3ms(max.)/page (256-byte per page)
- Byte program time: 10us (typical)
- 8/16/32/64 byte Wrap-Around Burst Read Mode
- Fast erase time: 45ms (typ.)/sector (4K-byte per sector); 250ms(typ.) /block (32K-byte per block); 500ms(typ.) /
block (64K-byte per block); 9s(typ.) /chip
• Low Power Consumption
- Low active read current: 20mA(max.) at 104MHz, 15mA(max.) at 84MHz
- Low active erase/programming current: 20mA (typ.)
- Standby current: 25uA (typ.)
• Deep Power Down: 2uA(typ.)
• Typical 100,000 erase/program cycles
• 20 years data retention
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- Block lock protection
The BP0-BP3 status bit defines the size of the area to be software protection against program and erase
instructions
- Additional 4k-bit secured OTP for unique identifier
• Auto Erase and Auto Program Algorithm
- Automatically erases and verifies data at selected sector or block
P/N: PM1472
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REV. 1.9, NOV. 08, 2013
MX25U1635E
- Automatically programs and verifies data at selected page by an internal algorithm that automatically times the
program pulse widths (Any page to be programed should have page in the erased state first)
• Status Register Feature
• Command Reset
• Program/Erase Suspend
• Electronic Identification
- JEDEC 1-byte manufacturer ID and 2-byte device ID
- RES command for 1-byte Device ID
- REMS command for 1-byte manufacturer ID and 1-byte device ID
• Support Serial Flash Discoverable Parameters (SFDP) mode
HARDWARE FEATURES
• SCLK Input
- Serial clock input
• SI/SIO0
- Serial Data Input or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
• SO/SIO1
- Serial Data Output or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
• WP#/SIO2
- Hardware write protection or serial data Input/Output for 4 x I/O read mode
• NC/SIO3
- NC pin or Serial input & Output for 4 x I/O read mode
• PACKAGE
- 8-pin SOP (150mil)
- 8-pin SOP (200mil)
- 8-land WSON (6x5mm)
- 8-land USON (4x4mm)
- All devices are RoHS Compliant and Halogen-free
P/N: PM1472
7
REV. 1.9, NOV. 08, 2013
MX25U1635E
2. GENERAL DESCRIPTION
The MX25U1635E are 16,777,216 bit serial Flash memory, which is configured as 2,097,152 x 8 internally. When
it is in two or four I/O read mode, the structure becomes 8,388,608 bits x 2 or 4,194,304 bits x 4. MX25U1635E
feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in
single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO).
Serial access to the device is enabled by CS# input.
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits
input and data output. When it is in four I/O read mode, the SI pin, SO pin and WP# pin become SIO0 pin, SIO1
pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output.
The MX25U1635E MXSMIO® (Serial Multi I/O) provides sequential read operation on whole chip.
After program/erase command is issued, auto program/ erase algorithms which program/ erase and verify the
specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis, or word basis for erase command is executed on sector (4K-byte), block (32K-byte), or block (64K-byte),
or whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read
command can be issued to detect completion status of a program or erase operation via WIP bit.
Advanced security features enhance the protection and security functions, please see security features section for
more details.
When the device is not in operation and CS# is high, it is put in standby mode and typically draws 30uA DC current.
The MX25U1635E utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.
P/N: PM1472
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REV. 1.9, NOV. 08, 2013
MX25U1635E
Table 1. Additional Feature Comparison
Additional
Features
Read Performance
Protection and Security
SPI
QPI
Flexible Block
4K-bit security
1 I/O
2 I/O
4 I/O
4 I/O
4 I/O
4 I/O
Protection
OTP
(104 MHz) (84 MHz) (84 MHz) (104 MHz) (84 MHz) (104 MHz)
(BP0-BP3)
Part
Name
MX25U1635E
Additional
Features
Part
Name
MX25U1635E
P/N: PM1472
V
V
V
V
V
V
V
V
Identifier
RES
REMS
RDID
(command: (command: (command:
AB hex)
90 hex)
9F hex)
C2 35 (hex)
35 (hex)
C2 25 35
(if ADD=0)
9
QPIID
(Command:
AF hex)
C2 25 35
REV. 1.9, NOV. 08, 2013
MX25U1635E
3. PIN CONFIGURATIONS
4. PIN DESCRIPTION
8-LAND USON (4x4mm)
CS#
SO/SIO1
WP#/SIO2
GND
1
2
3
4
SYMBOL
CS#
VCC
NC/SIO3
SCLK
SI/SIO0
8
7
6
5
SI/SIO0
SO/SIO1
SCLK
WP#/SIO2
8-LAND WSON (6x5mm)
CS#
SO/SIO1
WP#/SIO2
GND
1
2
3
4
NC/SIO3
VCC
GND
VCC
NC/SIO3
SCLK
SI/SIO0
8
7
6
5
DESCRIPTION
Chip Select
Serial Data Input (for 1 x I/O)/ Serial
Data Input & Output (for 2xI/O or 4xI/
O read mode)
Serial Data Output (for 1 x I/O)/ Serial
Data Input & Output (for 2xI/O or 4xI/
O read mode)
Clock Input
Write protection: connect to GND or
Serial Data Input & Output (for 4xI/O
read mode)
NC pin (Not connected) or Serial Data
Input & Output (for 4xI/O read mode)
+ 1.8V Power Supply
Ground
8-PIN SOP (150mil) / 8-PIN SOP (200mil)
CS#
SO/SIO1
WP#/SIO2
GND
P/N: PM1472
1
2
3
4
8
7
6
5
VCC
NC/SIO3
SCLK
SI/SIO0
10
REV. 1.9, NOV. 08, 2013
MX25U1635E
5. BLOCK DIAGRAM
X-Decoder
Address
Generator
Memory Array
Page Buffer
SI/SIO0
Data
Register
Y-Decoder
SRAM
Buffer
CS#
WP#/SIO2
NC/SIO3
SCLK
Mode
Logic
State
Machine
HV
Generator
Clock Generator
Output
Buffer
SO/SIO1
P/N: PM1472
Sense
Amplifier
11
REV. 1.9, NOV. 08, 2013
MX25U1635E
6. DATA PROTECTION
During power transition, there may be some false system level signals which result in inadvertent erasure or
programming. The device is designed to protect itself from these accidental write cycles.
The state machine will be reset as standby mode automatically during power up. In addition, the control register
architecture of the device constrains that the memory contents can only be changed after specific command
sequences have completed successfully.
In the following, there are several features to protect the system from the accidental write cycles during VCC powerup and power-down or from system noise.
•
Power-on reset and tPUW: to avoid sudden power switch by system power supply transition, the power-on reset
and tPUW (internal timer) may protect the Flash.
• Valid command length checking: The command length will be checked whether it is at byte base and completed
on byte boundary.
• Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before
issung other commands to change data. The WEL bit will return to reset stage under following situation:
- Power-up
- Write Disable (WRDI) command completion
- Write Status Register (WRSR) command completion
- Page Program (PP) command completion
- Quad I/O Page Program (4PP) command completion
- Sector Erase (SE) command completion
- Block Erase 32KB (BE32K) command completion
- Block Erase (BE) command completion
- Chip Erase (CE) command completion
- Program/Erase Suspend
- Softreset command completion
- Write Security Register (WRSCUR) command completion
- Write Protection Selection (WPSEL) command completion
•
Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from
writing all commands except Release from deep power down mode command (RDP) and Read Electronic
Signature command (RES) and softreset command.
•
Advanced Security Features: there are some protection and security features which protect content from
inadvertent write and hostile access.
I. Block lock protection
- The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0) bits to allow part of memory to be protected
as read only. The protected area definition is shown as "Table 2. Protected Area Sizes", the protected areas are
more flexible which may protect various area by setting value of BP0-BP3 bits.
- The Hardware Proteced Mode (HPM) use WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and Status
Register Write Protect bit.
- In four I/O and QPI mode, the feature of HPM will be disabled.
P/N: PM1472
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REV. 1.9, NOV. 08, 2013
MX25U1635E
Table 2. Protected Area Sizes
Status bit
Protect Level
BP3 BP2 BP1 BP0
0
0
0
0 0 (none)
0
0
0
1 1 (1block, protected block 31st)
0
0
1
0 2 (2blocks, protected block 30th~31st)
0
0
1
1 3 (4blocks, protected block 28th~31st)
0
1
0
0 4 (8blocks, protected block 24th~31st)
0
1
0
1 5 (16blocks, protected block 16th~31st)
0
1
1
0 6 (32blocks, protected all)
0
1
1
1 7 (32blocks, protected all)
1
0
0
0 8 (32blocks, protected all)
1
0
0
1 9 (32blocks, protected all)
1
0
1
0 10 (16blocks, protected block 0th~15th)
1
0
1
1 11 (24blocks, protected block 0th~23rd)
1
1
0
0 12 (28blocks, protected block 0th~27th)
1
1
0
1 13 (30blocks, protected block 0th~29th)
1
1
1
0 14 (31blocks, protected block 0th~30th)
1
1
1
1 15 (32blocks, protected all)
II. Additional 4K-bit secured OTP for unique identifier: to provide 4K-bit one-time program area for setting
device unique serial number - Which may be set by factory or system customer. Please refer to "Table 3. 4K-bit
Secured OTP Definition".
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 4K-bit secured OTP by entering 4K-bit secured OTP mode (with Enter Security OTP (ENSO)
command), and going through normal program procedure, and then exiting 4K-bit secured OTP mode by writing
Exit Security OTP (EXSO) command.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register)
command to set customer lock-down bit1 as "1". Please refer to "Table 10. Security Register Definition" for
security register bit definition and "Table 3. 4K-bit Secured OTP Definition" for address range definition.
- Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 4K-bit secured
OTP mode, array access is not allowed.
Table 3. 4K-bit Secured OTP Definition
Address range
Size
Standard Factory Lock
xxx000~xxx00F
128-bit
ESN (electrical serial number)
xxx010~xxx1FF
3968-bit
N/A
P/N: PM1472
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Customer Lock
Determined by customer
REV. 1.9, NOV. 08, 2013
MX25U1635E
7. Memory Organization
Table 4. Memory Organization
Block
(64KB)
31
Block
(32KB)
63
|
62
Sector
(4KB)
511
:
496
495
:
480
479
:
1FF000h
:
1F0000h
1EF000h
:
1E0000h
1DF000h
:
1FFFFFh
:
1F0FFFh
1EFFFFh
:
1E0FFFh
1DFFFFh
:
464
1D0000h
1D0FFFh
30
61
|
60
29
59
|
58
28
57
|
56
463
:
1CF000h
:
1CFFFFh
:
448
1C0000h
1C0FFFh
27
55
|
54
26
53
|
52
25
51
|
50
24
49
|
48
23
47
|
46
22
45
|
44
21
43
|
42
20
41
|
40
19
39
|
38
1BF000h
:
1B0000h
1AF000h
:
1A0000h
19F000h
:
190000h
18F000h
:
180000h
17F000h
:
170000h
16F000h
:
160000h
15F000h
:
150000h
14F000h
:
140000h
13F000h
:
130000h
12F000h
1BFFFFh
:
1B0FFFh
1AFFFFh
:
1A0FFFh
19FFFFh
:
190FFFh
18FFFFh
:
180FFFh
17FFFFh
:
170FFFh
16FFFFh
:
160FFFh
15FFFFh
:
150FFFh
14FFFFh
:
140FFFh
13FFFFh
:
130FFFh
12FFFFh
18
37
|
36
447
:
432
431
:
416
415
:
400
399
:
384
383
:
368
367
:
352
351
:
336
335
:
320
319
:
304
303
:
120000h
11F000h
:
120FFFh
11FFFFh
17
35
|
34
:
288
287
:
110000h
10F000h
:
110FFFh
10FFFFh
16
33
|
32
:
272
271
:
:
:
256
100000h
100FFFh
P/N: PM1472
Block
(64KB)
Address Range
15
14
Block
(32KB)
31
|
30
14
29
|
28
13
27
|
26
12
25
|
24
11
23
|
22
10
21
|
20
9
19
|
18
8
17
|
16
7
15
|
14
6
13
|
12
5
11
|
10
4
9
|
8
3
7
|
6
2
5
|
4
1
3
|
2
0
1
|
0
Sector
(4KB)
255
:
240
239
:
224
223
:
208
207
:
192
191
:
176
175
:
160
159
:
144
143
:
128
127
:
112
111
:
96
95
:
80
79
:
64
63
:
48
47
:
32
31
:
16
15
:
2
1
0
Address Range
0FF000h
:
0F0000h
0EF000h
:
0E0000h
0DF000h
:
0D0000h
0CF000h
:
0C0000h
0BF000h
:
0B0000h
0AF000h
:
0A0000h
09F000h
:
090000h
08F000h
:
080000h
07F000h
:
070000h
06F000h
:
060000h
05F000h
:
050000h
04F000h
:
040000h
03F000h
:
030000h
02F000h
:
020000h
01F000h
:
010000h
00F000h
:
002000h
001000h
000000h
0FFFFFh
:
0F0FFFh
0EFFFFh
:
0E0FFFh
0DFFFFh
:
0D0FFFh
0CFFFFh
:
0C0FFFh
0BFFFFh
:
0B0FFFh
0AFFFFh
:
0A0FFFh
09FFFFh
:
090FFFh
08FFFFh
:
080FFFh
07FFFFh
:
070FFFh
06FFFFh
:
060FFFh
05FFFFh
:
050FFFh
04FFFFh
:
040FFFh
03FFFFh
:
030FFFh
02FFFFh
:
020FFFh
01FFFFh
:
010FFFh
00FFFFh
:
002FFFh
001FFFh
000FFFh
REV. 1.9, NOV. 08, 2013
MX25U1635E
8. DEVICE OPERATION
1. Before a command is issued, status register should be checked to ensure device is ready for the intended
operation.
2. When incorrect command is inputted to this device, it enters standby mode and remains in standby mode until
next CS# falling edge. In standby mode, SO pin of the device is High-Z.
3. When correct command is inputted to this device, it enters active mode and remains in active mode until next
CS# rising edge.
4. Input data is latched on the rising edge of Serial Clock (SCLK) and data is shifted out on the falling edge of
SCLK. The difference of Serial mode 0 and mode 3 is shown as "Figure 1. Serial Modes Supported".
5. For the following instructions: RDID, RDSR, RDSCUR, READ, FAST_READ, RDSFDP, 2READ, 4READ, RES,
REMS, SQIID, RDBLOCK, the shifted-in instruction sequence is followed by a data-out sequence. After any bit
of data being shifted out, the CS# can be high. For the following instructions: WREN, WRDI, WRSR, SE, BE32K,
BE, CE, PP, 4PP, DP, ENSO, EXSO, WRSCUR, WPSEL, SBLK, SBULK, GBULK, SUSPEND, RESUME, NOP,
RSTEN, RST, EQIO, RSTQIO the CS# must go high exactly at the byte boundary; otherwise, the instruction will
be rejected and not executed.
6. While a Write Status Register, Program or Erase operation is in progress, access to the memory array is
neglected and will not affect the current operation of Write Status Register, Program, Erase.
Figure 1. Serial Modes Supported
CPOL
CPHA
shift in
(Serial mode 0)
0
0
SCLK
(Serial mode 3)
1
1
SCLK
SI
shift out
MSB
SO
MSB
Note:
CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not
transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is
supported.
P/N: PM1472
15
REV. 1.9, NOV. 08, 2013
MX25U1635E
8-1. Quad Peripheral Interface (QPI) Read Mode
QPI protocol enables user to take full advantage of Quad I/O Serial Flash by providing the Quad I/O interface in
command cycles, address cycles and as well as data output cycles.
Enable QPI mode
By issuing 35H command, the QPI mode is enabled.
Figure 2. Enable QPI Sequence (Command 35H)
CS#
MODE 3
SCLK
0
1
2
3
4
5
6
7
MODE 0
SIO0
35
SIO[3:1]
P/N: PM1472
16
REV. 1.9, NOV. 08, 2013
MX25U1635E
Reset QPI mode
By issuing F5H command, the device is reset to 1-I/O SPI mode.
Figure 3. Reset QPI Mode (Command F5H)
CE#
SCLK
SIO[3:0]
F5
Fast QPI Read mode (FASTRDQ)
To increase the code transmission speed, the device provides a "Fast QPI Read Mode" (FASTRDQ). By issuing
command code EBH, the FASTRDQ mode is enabled. The number of dummy cycle increase from 4 to 6 cycles. The
read cycle frequency will increase from 84MHz to 104MHz.
Figure 4. Fast QPI Read Mode (FASTRDQ) (Command EBH)
CS#
MODE 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
MODE 3
SCLK
MODE 0
SIO[3:0]
MODE 0
EB
A5 A4 A3 A2 A1 A0
X
X
X
X
X
H0 L0 H1 L1 H2 L2 H3 L3
MSB
Data Out
Data In
P/N: PM1472
X
17
REV. 1.9, NOV. 08, 2013
MX25U1635E
9. COMMAND DESCRIPTION
Table 5. Command Set
Read Commands
I/O
Read Mode
Command
(byte)
Clock rate
(MHz)
1st byte
2nd byte
3rd byte
4th byte
5th byte
Action
1
SPI
2
SPI
2READ (2
FAST READ
READ
RDSFDP
x I/O read
* (fast read
(normal read)
(Read SFDP) command)
data)
Note1
33
1
SPI
104
1
SPI
104
4
SPI
W4READ
84
03 (hex)
AD1(8)
AD2(8)
AD3(8)
0B (hex)
5A (hex)
BB (hex)
AD1(8)
AD1(8)
AD1(4)
AD2(8)
AD2(8)
AD2(4)
AD3(8)
AD3(8)
AD3(4)
Dummy(8)
Dummy(8)
Dummy(4)
n bytes read n bytes read Read SFDP n bytes read
out until CS# out until CS#
mode
out by 2 x I/
goes high
goes high
O until CS#
goes high
4
4
4
SPI
QPI
QPI
4READ *
4READ *
FAST READ
(4 x I/O read
(4 x I/O read
* (fast read
command)
command)
data)
Note1
Note1
84
104
84
104
E7 (hex)
AD1(2)
AD2(2)
AD3(2)
Dummy(4)
Quad I/O
read with
4 dummy
cycles in
84MHz
EB (hex)
AD1(2)
AD2(2)
AD3(2)
Dummy(6)
Quad I/O
read with
6 dummy
cycles in
104MHz
0B (hex)
AD1(2)
AD2(2)
AD3(2)
Dummy(4)
n bytes read
out until CS#
goes high
EB (hex)
AD1(2)
AD2(2)
AD3(2)
Dummy(6)
Quad I/O
read with
6 dummy
cycles in
104MHz
Program/Erase Commands
Command
(byte)
1st byte
2nd byte
3rd byte
4th byte
Action
Command
(byte)
1st byte
2nd byte
3rd byte
4th byte
Action
P/N: PM1472
WREN*
WRDI *
RDSR * (read WRSR * (write
4PP (quad
SE *
BE 32K * (block
(write enable) (write disable) status register) status register) page program) (sector erase) erase 32KB)
06 (hex)
38 (hex)
20 (hex)
52 (hex)
AD1
AD1
AD1
AD2
AD2
AD2
AD3
AD3
AD3
to erase the
to erase the
sets the (WEL)
resets the
to read out the to write new
quad input to
program the selected sector selected 32K
write enable
(WEL) write
values of the values of the
block
latch bit
enable latch bit status register status register selected page
BE * (block
erase 64KB)
04 (hex)
CE * (chip
erase)
05 (hex)
PP * (page
program)
01 (hex)
Values
RDP * (Release
DP * (Deep
from deep
power down)
power down)
D8 (hex)
60 or C7 (hex)
02 (hex)
AD1
AD1
AD2
AD2
AD3
AD3
to erase the to erase whole to program the
selected block
chip
selected page
18
B9 (hex)
AB (hex)
enters deep
power down
mode
release from
deep power
down mode
PGM/ERS
Suspend *
(Suspends
Program/
Erase)
B0 (hex)
PGM/ERS
Resume *
(Resumes
Program/
Erase)
30 (hex)
REV. 1.9, NOV. 08, 2013
MX25U1635E
Security/ID/Mode Setting/Reset Commands
RDID
RES (read
Command (byte) (read identificelectronic ID)
ation)
1st byte
2nd byte
3rd byte
4th byte
5th byte
Action
COMMAND
(byte)
1st byte
2nd byte
3rd byte
4th byte
Action
COMMAND
(byte)
1st byte
2nd byte
3rd byte
4th byte
Action
9F (hex)
AB (hex)
x
x
x
REMS (read
RDSCUR *
WRSCUR *
electronic
ENSO * (enter EXSO * (exit
(read security (write security
manufacturer secured OTP) secured OTP)
register)
register)
& device ID)
90 (hex)
B1 (hex)
C1 (hex)
2B (hex)
2F (hex)
x
x
ADD (Note 2)
outputs JEDEC to read out
output the
to enter the to exit the 4K1-byte Device Manufacturer 4K-bit secured bit secured
ID: 1-byte
OTP mode
Manufact-urer
ID
ID & Device ID OTP mode
ID & 2-byte
Device ID
SBULK *
SBLK * (single
(single block
block lock
unlock)
36 (hex)
39 (hex)
AD1
AD1
AD2
AD2
AD3
AD3
individual block
individual
(64K-byte) or
block (64Kbyte) or sector sector (4K(4K-byte) write byte) unprotect
protect
RST *
(Reset
Memory)
99 (hex)
RDBLOCK *
GBLK * (gang GBULK * (gang
(block protect
block lock)
block unlock)
read)
3C (hex)
7E (hex)
98 (hex)
AD1
AD2
AD3
read individual whole chip
whole chip
unprotect
block or sector write protect
write protect
status
EQIO
RSTQIO
QPIID
(Enable Quad (Reset Quad I/
(QPI ID Read)
I/O)
O)
35 (hex)
F5 (hex)
AF (hex)
Entering the Exiting the QPI
QPI mode
mode
ID in QPI
interface
to read value to set the lockof security
down bit as
register
"1" (once lockdown, cannot
be update)
NOP * (No
Operation)
RSTEN *
(Reset Enable)
00 (hex)
66 (hex)
SBL *
(Set Burst
Length)
C0 (hex)
Value
WPSEL *
(Write Protect
Selection)
68 (hex)
to set Burst
length
to enter
and enable
individal block
protect mode
Note 1: Command set highlighted with (*) are supported both in SPI and QPI mode.
Note 2: The count base is 4-bit for ADD(2) and Dummy(2) because of 2 x I/O. And the MSB is on SI/SIO1 which is different from
1 x I/O condition.
Note 3: ADD=00H will output the manufacturer ID first and ADD=01H will output device ID first.
Note 4: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the hidden mode.
Note 5: Before executing RST command, RSTEN command must be executed. If there is any other command to interfere, the
reset operation will be disabled.
P/N: PM1472
19
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-1. Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP, 4PP,
SE, BE32K, BE, CE, and WRSR, which are intended to change the device content WEL bit should be set every time
after the WREN instruction setting the WEL bit.
The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
in SPI mode. (Please refer to "Figure 23. Write Enable (WREN) Sequence (Command 06) (SPI Mode)" and "Figure
24. Write Enable (WREN) Sequence (Command 06) (QPI Mode)")
9-2. Write Disable (WRDI)
The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode. (Please refer to "Figure 26. Write Disable (WRDI) Sequence (Command 04) (QPI Mode)" and
"Figure 25. Write Disable (WRDI) Sequence (Command 04) (SPI Mode)" )
The WEL bit is reset by following situations:
- Power-up
- Completion of Write Disable (WRDI) instruction
- Completion of Write Status Register (WRSR) instruction
- Completion of Page Program (PP) instruction
- Completion of Quad Page Program (4PP) instruction
- Completion of Sector Erase (SE) instruction
- Completion of Block Erase 32KB (BE32K) instruction
- Completion of Block Erase (BE) instruction
- Completion of Chip Erase (CE) instruction
- Pgm/Ers Suspend
9-3. Read Identification (RDID)
The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix
Manufacturer ID and Device ID are listed as "Table 9. ID Definitions" ID Definitions.
The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out
on SO→ to end RDID operation can drive CS# to high at any time during data out.
While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on
the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby
stage.
9-4. Read Status Register (RDSR)
The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even
in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before
sending a new instruction when a program, erase, or write status register operation is in progress.
P/N: PM1472
20
REV. 1.9, NOV. 08, 2013
MX25U1635E
The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data
out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when
during SPI mode. (Please refer to "Figure 28. Read Status Register (RDSR) Sequence (Command 05) (SPI Mode)"
and "Figure 29. Read Status Register (RDSR) Sequence (Command 05) (QPI Mode)")
For user to check if Program/Erase operation is finished or not, RDSR instruction flow are shown as follows:
Figure 5. Program/ Erase flow with read array data
start
WREN command
RDSR command*
WEL=1?
No
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Read array data
(same address of PGM/ERS)
Verify OK?
No
Yes
Program/erase successfully
Program/erase
another block?
No
Program/erase fail
Yes
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDBLOCK to check the block status.
Program/erase completed
P/N: PM1472
21
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 6. Program/ Erase flow without read array data (read P_FAIL/E_FAIL flag)
start
WREN command
RDSR command*
WEL=1?
No
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
RDSCUR command
Yes
P_FAIL/E_FAIL =1 ?
No
Program/erase fail
Program/erase successfully
Program/erase
another block?
No
Yes
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDBLOCK to check the block status.
Program/erase completed
P/N: PM1472
22
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 7. WRSR flow
start
WREN command
RDSR command
WEL=1?
No
Yes
WRSR command
Write status register data
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Verify OK?
No
Yes
WRSR successfully
P/N: PM1472
WRSR fail
23
REV. 1.9, NOV. 08, 2013
MX25U1635E
The definitions of the status register bits are as below:
WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write
status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status
register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status
register cycle.
WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable
latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/
erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the
device will not accept program/erase/write status register instruction. The program/erase command will be ignored
if it is applied to a protected memory area. To ensure both WIP bit & WEL bit are both set to 0 and available for next
program/erase/operations, WIP bit needs to be confirm to be 0 before polling WEL bit. After WIP bit confirmed, WEL
bit needs to be confirm to be 0.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area (as
defined in "Table 2. Protected Area Sizes") of the device to against the program/erase instruction without hardware
protection mode being set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR)
instruction to be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector
Erase (SE), Block Erase 32KB (BE32K), Block Erase (BE) and Chip Erase (CE) instructions (only if Block Protect bits
(BP3:BP0) set to 0, the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default. Which is unprotected.
QE bit. The Quad Enable (QE) bit, non-volatile bit, performs SPI Quad modes when it is reset to "0" (factory default)
to enable WP# or is set to "1" to enable Quad SIO2 and SIO3. QE bit is only valid for SPI mode. When operate in SPI
mode, and quad IO read is desired (for command EBh/E7h, or quad IO program, 38h). WRSR command has to be
set the through Status Register bit 6, the QE bit. Then the SPI Quad I/O commands (EBh/E7h/38h) will be accepted
by flash. If QE bit is not set, SPI Quad I/O commands (EBh/E7h/38h) will be invalid commands, the device will not
respond to them. Once QE bit is set, all SPI commands are valid. 1I/O commands and 2 I/O commands can be issued
no matter QE bit is "0" or "1". When in QPI mode, QE bit will not affect the operation of QPI mode at all. Therefore
either "0" or "1" value of QE bit does not affect the QPI mode operation.
SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, is operated together with Write Protection
(WP#/SIO2) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and
WP#/SIO2 pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is
no longer accepted for execution and the SRWD bit and Block Protect bits (BP3, BP2, BP1, BP0) are read only. The
SRWD bit defaults to be "0".
Table 6. Status Register
bit7
bit6
SRWD (status
register write
protect)
QE
(Quad
Enable)
bit5
BP3
(level of
protected
block)
bit4
BP2
(level of
protected
block)
1=Quad
1=status
Enable
register write
(note 1)
(note 1)
0=not Quad
disable
Enable
Non-volatile Non-volatile Non-volatile Non-volatile
bit
bit
bit
bit
Note 1: See the "Table 2. Protected Area Sizes".
P/N: PM1472
bit3
BP1
(level of
protected
block)
bit2
BP0
(level of
protected
block)
(note 1)
(note 1)
Non-volatile
bit
Non-volatile
bit
24
bit1
bit0
WEL
WIP
(write enable
(write in
latch)
progress bit)
1=write
1=write
enable
operation
0=not write 0=not in write
enable
operation
volatile bit
volatile bit
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-5. Write Status Register (WRSR)
The WRSR instruction is for changing the values of Status Register Bits. Before sending WRSR instruction,
the Write Enable (WREN) instruction must be decoded and executed to set the Write Enable Latch (WEL) bit in
advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1, BP0) bits to define the
protected area of memory (as shown in "Table 2. Protected Area Sizes"). The WRSR also can set or reset the Quad
enable (QE) bit and set or reset the Status Register Write Disable (SRWD) bit in accordance with Write Protection (WP#/
SIO2) pin signal, but has no effect on bit1(WEL) and bit0 (WIP) of the status register. The WRSR instruction cannot
be executed once the Hardware Protected Mode (HPM) is entered.
The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register
data on SI→CS# goes high. (Please refer to "Figure 30. Write Status Register (WRSR) Sequence (Command 01) (SPI
Mode)" and "Figure 31. Write Status Register (WRSR) Sequence (Command 01) (QPI Mode)")
The CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.
The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes high. The Write
in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress. The WIP sets 1
during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write Enable Latch (WEL)
bit is reset.
Table 7. Protection Modes
Mode
Software protection
mode (SPM)
Hardware protection
mode (HPM)
Status register condition
WP# and SRWD bit status
Memory
Status register can be written
in (WEL bit is set to "1") and
the SRWD, BP0-BP3
bits can be changed
WP#=1 and SRWD bit=0, or
WP#=0 and SRWD bit=0, or
WP#=1 and SRWD=1
The protected area
cannot
be program or erase.
The SRWD, BP0-BP3 of
status register bits cannot be
changed
WP#=0, SRWD bit=1
The protected area
cannot
be program or erase.
Note:
1. As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in "Table 2.
Protected Area Sizes".
As the above table showing, the summary of the Software Protected Mode (SPM) and Hardware Protected Mode (HPM).
Software Protected Mode (SPM):
- When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can
change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1,
BP0, is at software protected mode (SPM).
- When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit can change the values
of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0, is at software
protected mode (SPM)
Note:
If SRWD bit=1 but WP#/SIO2 is low, it is impossible to write the Status Register even if the WEL bit has previously
been set. It is rejected to write the Status Register and not be executed.
P/N: PM1472
25
REV. 1.9, NOV. 08, 2013
MX25U1635E
Hardware Protected Mode (HPM):
- When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware
protected mode (HPM). The data of the protected area is protected by software protected mode by BP3, BP2,
BP1, BP0 and hardware protected mode by the WP#/SIO2 to against data modification.
Note:
To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is entered.
If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only
can use software protected mode via BP3, BP2, BP1, BP0.
If the system enter QPI or set QE=1, the feature of HPM will be disabled.
9-6. Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on
the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address
is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can
be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been
reached.
The sequence of issuing READ instruction is: CS# goes low→sending READ instruction code→ 3-byte address
on SI→ data out on SO→to end READ operation can use CS# to high at any time during data out. (Please refer to
"Figure 32. Read Data Bytes (READ) Sequence (Command 03) (SPI Mode only) (33MHz)")
9-7. Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at
any location. The address is automatically increased to the next higher address after each byte data is shifted out,
so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when
the highest address has been reached.
Read on SPI Mode The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ
instruction code→ 3-byte address on SI→1-dummy byte (default) address on SI→ data out on SO→ to end FAST_
READ operation can use CS# to high at any time during data out. (Please refer to "Figure 33. Read at Higher Speed
(FAST_READ) Sequence (Command 0B) (SPI Mode) (104MHz)")
Read on QPI Mode The sequence of issuing FAST_READ instruction in QPI mode is: CS# goes low→ sending
FAST_READ instruction, 2 cycles→ 24-bit address interleave on SIO3, SIO2, SIO1 & SIO0→4 dummy cycles→data
out interleave on SIO3, SIO2, SIO1 & SIO0→ to end QPI FAST_READ operation can use CS# to high at any time
during data out. (Please refer to "Figure 34. Read at Higher Speed (FAST_READ) Sequence (Command 0B) (QPI
Mode) (84MHz)")
In the performance-enhancing mode, P[7:4] must be toggling with P[3:0] ; likewise P[7:0]=A5h,5Ah,F0h or 0Fh can
make this mode continue and reduce the next 4READ instruction. Once P[7:4] is no longer toggling with P[3:0];
likewise P[7:0]=FFh,00h,AAh or 55h and afterwards CS# is raised and then lowered, the system then will escape
from performance enhance mode and return to normal operation.
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
P/N: PM1472
26
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-8. 2 x I/O Read Mode (2READ)
The 2READ instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the
next higher address after each byte data is shifted out, so the whole memory can be read out at a single 2READ
instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ
instruction, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 24-bit address
interleave on SIO1 & SIO0→ 4 dummy cycles on SIO1 & SIO0→ data out interleave on SIO1 & SIO0→ to end
2READ operation can use CS# to high at any time during data out (Please refer to "Figure 35. 2 x I/O Read Mode
Sequence (Command BB) (SPI Mode only) (84MHz)").
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact on
the Program/Erase/Write Status Register current cycle.
9-9. 4 x I/O Read Mode (4READ)
The 4READ instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status
Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of SCLK,
and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency
fQ. The first address byte can be at any location. The address is automatically increased to the next higher address
after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address
counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruction, the following
address/dummy/data out will perform as 4-bit instead of previous 1-bit.
4 x I/O Read on SPI Mode (4READ) The sequence of issuing 4READ instruction is: CS# goes low→ sending
4READ instruction→ 24-bit address interleave on SIO3, SIO2, SIO1 & SIO0→2+4 dummy cycles→data out
interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ operation can use CS# to high at any time during data out.
W4READ instruction (E7) is also available is SPI mode for 4 I/O read. The sequence is similar to 4READ, but with
only 4 dummy cycles. The clock rate runs at 84MHz.
4 x I/O Read on QPI Mode (4READ) The 4READ instruction also support on QPI command mode. The sequence of
issuing 4READ instruction QPI mode is: CS# goes low→ sending 4READ instruction→ 24-bit address interleave on
SIO3, SIO2, SIO1 & SIO0→2+4 dummy cycles→data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ
operation can use CS# to high at any time during data out (Please refer to "Figure 36. 4 x I/O Read Mode Sequence
(Command EB) (SPI Mode) (104MHz)").
Another sequence of issuing 4 READ instruction especially useful in random access is : CS# goes low→sending
4 READ instruction→3-bytes address interleave on SIO3, SIO2, SIO1 & SIO0 →performance enhance toggling
bit P[7:0]→ 4 dummy cycles →data out still CS# goes high → CS# goes low (reduce 4 Read instruction) →24-bit
random access address (Please refer to "Figure 37. 4 x I/O Read enhance performance Mode Sequence (Command
EB) (SPI Mode) (104MHz)" and "Figure 38. 4 x I/O Read enhance performance Mode Sequence (Command EB) (QPI
Mode) (104MHz)").
In the performance-enhancing mode, P[7:4] must be toggling with P[3:0] ; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh
can make this mode continue and reduce the next 4READ instruction. Once P[7:4] is no longer toggling with P[3:0];
likewise P[7:0]=FFh,00h,AAh or 55h and afterwards CS# is raised and then lowered, the system then will escape
from performance enhance mode and return to normal operation.
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact on
the Program/Erase/Write Status Register current cycle.
P/N: PM1472
27
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-10. Burst Read
This device supports Burst Read in both SPI and QPI mode.
To set the Burst length, following command operation is required
Issuing command: “C0h” in the first Byte (8-clocks), following 4 clocks defining wrap around enable with “0h” and
disable with“1h”.
Next 4 clocks are to define wrap around depth. Definition as following table:
Table 8. Wrap Around Definition Table
Data
1xh
1xh
1xh
1xh
Wrap Around
No
No
No
No
Wrap Depth
X
X
X
X
Data
00h
01h
02h
03h
Wrap Around
Yes
Yes
Yes
Yes
Wrap Depth
8-byte
16-byte
32-byte
64-byte
The wrap around unit is defined within the 256Byte page, with random initial address. It’s defined as “wrap-around
mode disable” for the default state of the device. To exit wrap around, it is required to issue another “C0” command
in which data=‘1xh”. Otherwise, wrap around status will be retained until power down or reset command. To change
wrap around depth, it is requried to issue another “C0” command in which data=“0xh”. QPI “0Bh” “EBh” and SPI “EBh”
“E7h” support wrap around feature after wrap around enable. Burst read is supported in both SPI and QPI mode. (The
device ID default without Burst Read)
Figure 8. SPI Mode
CS#
0
1
2
3
1
1
0
4
5
6
7
8
9
0
0
0
0
H
H
10
11
12
13
H
L
L
14
15
SCLK
SIO
0
H
L
L
Figure 9. QPI Mode
CS#
0
1
2
3
C1
C0
H0
L0
SCLK
SIO[3:0]
MSB
LSB
Note: MSB=Most Significant Bit
LSB=Least Significant Bit
P/N: PM1472
28
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-11. Performance Enhance Mode
The device could waive the command cycle bits if the two cycle bits after address cycle toggles. (Please refer to
"Figure 37. 4 x I/O Read enhance performance Mode Sequence (Command EB) (SPI Mode) (104MHz)" and "Figure
38. 4 x I/O Read enhance performance Mode Sequence (Command EB) (QPI Mode) (104MHz)").
Performance enhance mode is supported in both SPI and QPI mode.
In QPI mode, “EBh” “0Bh” and SPI “EBh” “E7h” commands support enhance mode. The performance enhance
mode is not supported in dual I/O mode.
After entering enhance mode, following CSB go high, the device will stay in the read mode and treat CSB go low of
the first clock as address instead of command cycle.
To exit enhance mode, a new fast read command whose first two dummy cycles is not toggle then exit. Or issue
”FFh” command to exit enhance mode.
9-12. Performance Enhance Mode Reset (FFh)
To conduct the Performance Enhance Mode Reset operation in SPI mode, FFh command code, 8 clocks, should
be issued in 1I/O sequence. In QPI Mode, FFFFFFFFh command code, 8 clocks, in 4I/O should be issued.
(Please refer to "Figure 61. Performance Enhance Mode Reset for Fast Read Quad I/O (SPI Mode)", "Figure 62.
Performance Enhance Mode Reset for Fast Read Quad I/O (QPI Mode)")
If the system controller is being Reset during operation, the flash device will return to the standard SPI operation.
Upon Reset of main chip, SPI instruction would be issued from the system. Instructions like Read ID (9Fh) or Fast
Read (0Bh) would be issued.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-13. Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for
any 4K-byte sector. A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit
before sending the Sector Erase (SE). Any address of the sector (see "Table 4. Memory Organization" ) is a valid
address for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the least significant
bit of the address been latched-in); otherwise, the instruction will be rejected and not executed.
Address bits [Am-A12] (Am is the most significant address) select the sector address.
The sequence of issuing SE instruction is: CS# goes low→ sending SE instruction code→ 3-byte address on SI→
CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. (Please refer to "Figure 42. Sector Erase (SE) Sequence (Command 20) (SPI Mode)",
"Figure 43. Sector Erase (SE) Sequence (Command 20) (QPI Mode)")
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Sector Erase cycle is in progress. The WIP sets during the tSE
timing, and clears when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
sector is protected by BP3, BP2, BP1, BP0 bits, the Sector Erase (SE) instruction will not be executed on the sector.
P/N: PM1472
29
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-14. Block Erase (BE32K)
The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is used for
32K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable Latch
(WEL) bit before sending the Block Erase (BE32K). Any address of the block (see "Table 4. Memory Organization")
is a valid address for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte boundary (the
least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE32K instruction is: CS# goes low→ sending BE32K instruction code→ 3-byte address
on SI→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. (Please refer to "Figure 44. Block Erase 32KB (BE32K) Sequence (Command 52) (SPI
Mode)"and "Figure 45. Block Erase 32KB (BE32K) Sequence (Command 52) (QPI Mode)")
The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE32K
timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
block is protected by BP3, BP2, BP1, BP0 bits, the Block Erase (BE32K) instruction will not be executed on the
block.
9-15. Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used
for 64K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable
Latch (WEL) bit before sending the Block Erase (BE). Any address of the block (Please refer to "Table 4. Memory
Organization") is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the
least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 3-byte address on SI→
CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. (Please refer to "Figure 46. Block Erase (BE) Sequence (Command D8) (SPI Mode)" and
"Figure 47. Block Erase (BE) Sequence (Command D8) (QPI Mode)")
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE
timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
block is protected by BP3, BP2, BP1, BP0 bits, the Block Erase (BE) instruction will not be executed on the block.
9-16. Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN)
instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS#
must go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high.
P/N: PM1472
30
REV. 1.9, NOV. 08, 2013
MX25U1635E
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. (Please refer to "Figure 48. Chip Erase (CE) Sequence (Command 60 or C7) (SPI Mode)",
"Figure 49. Chip Erase (CE) Sequence (Command 60 or C7) (QPI Mode)")
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Chip Erase cycle is in progress. The WIP sets during the tCE
timing, and clears when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
chip is protected by BP3, BP2, BP1, BP0 bits, the Chip Erase (CE) instruction will not be executed. It will be only
executed when BP3, BP2, BP1, BP0 all set to "0".
9-17. Page Program (PP)
The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction
must be executed to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). The device
programs only the last 256 data bytes sent to the device. The last address byte (the 8 least significant address
bits, A7-A0) should be set to 0 for 256 bytes page program. If A7-A0 are not all zero, transmitted data that exceed
page length are programmed from the starting address (24-bit address that last 8 bit are all 0) of currently selected
page. If the data bytes sent to the device exceeds 256, the last 256 data byte is programmed at the request page
and previous data will be disregarded. If the data bytes sent to the device has not exceeded 256, the data will be
programmed at the request address of the page. There will be no effort on the other data bytes of the same page.
The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte address on SI→ at
least 1-byte on data on SI→ CS# goes high. (Please refer to "Figure 39. Page Program (PP) Sequence (Command
02) (SPI Mode)" and "Figure 40. Page Program (PP) Sequence (Command 02) (QPI Mode)")
The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte
boundary( the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be
executed.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Page Program cycle is in progress. The WIP sets during the tPP
timing, and clears when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
page is protected by BP3, BP2, BP1, BP0 bits, the Page Program (PP) instruction will not be executed.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-18. 4 x I/O Page Program (4PP)
The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN)
instruction must be executed to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to
"1" before sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1,
SIO2, and SIO3 as address and data input, which can improve programmer performance and the effectiveness of
application of lower clock less than 33MHz. For system with faster clock, the Quad page program cannot provide
more performance, because the required internal page program time is far more than the time data flows in.
Therefore, we suggest that while executing this command (especially during sending data), user can slow the clock
speed down to 33MHz below. The other function descriptions are as same as standard page program.
The sequence of issuing 4PP instruction is: CS# goes low→ sending 4PP instruction code→ 3-byte address on
SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high.
P/N: PM1472
31
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-19. Deep Power-down (DP)
The Deep Power-down (DP) instruction is for setting the device to minimum power consumption (the current is
reduced from standby to deep power-down). The Deep Power-down mode requires the Deep Power-down (DP)
instruction to enter, during the Deep Power-down mode, the device is not active and all Write/Program/Erase
instruction are ignored.
The sequence of issuing DP instruction is: CS# goes low→sending DP instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. (Please refer to "Figure 50. Deep Power-down (DP) Sequence (Command B9) (SPI Mode)"
and "Figure 51. Deep Power-down (DP) Sequence (Command B9) (QPI Mode)")
Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP)
and Read Electronic Signature (RES) instruction and softreset command. (those instructions allow the ID being
reading out). When Power-down, or software reset command the deep power-down mode automatically stops, and
when power-up, the device automatically is in standby mode. For DP instruction the CS# must go high exactly at the
byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed.
As soon as Chip Select (CS#) goes high, a delay of tDP is required before entering the Deep Power-down mode.
9-20. Release from Deep Power-down (RDP), Read Electronic Signature (RES)
The Release from Deep Power-down (RDP) instruction is completed by driving Chip Select (CS#) High. When Chip
Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in
the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip
Select (CS#) must remain High for at least tRES2(max), as specified in "Table 15. AC Characteristics". Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The
RDP instruction is only for releasing from Deep Power Down Mode.
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as "Table 9. ID
Definitions" on next page. This is not the same as RDID instruction. It is not recommended to use for new design.
For new design, please use RDID instruction.
The sequence is shown as "Figure 52. RDP and Read Electronic Signature (RES) Sequence (Command AB) (SPI
Mode)", "Figure 53. Release from Deep Power-down (RDP) Sequence (Command AB) (SPI Mode)" and "Figure 54.
Release from Deep Power-down (RDP) Sequence (Command AB) (QPI Mode)". Even in Deep power-down mode,
the RDP and RES are also allowed to be executed, only except the device is in progress of program/erase/write
cycle; there's no effect on the current program/erase/write cycle in progress.
SPI (8 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode.
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly if
continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously in Deep
Power-down mode, the device transition to standby mode is immediate. If the device was previously in Deep Powerdown mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least tRES2(max).
Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute instruction.
P/N: PM1472
32
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-21. Read Electronic Manufacturer ID & Device ID (REMS)
The REMS instruction is an alternative to the Release from Power-down/Device ID instruction that provides both the
JEDEC assigned manufacturer ID and the specific device ID.
The REMS instruction is very similar to the Release from Power-down/Device ID instruction. The instruction is
initiated by driving the CS# pin low and shift the instruction code "90h" followed by two dummy bytes and one bytes
address (A7~A0). After which, the Manufacturer ID for Macronix (C2h) and the Device ID are shifted out on the
falling edge of SCLK with most significant bit (MSB) first as shown in "Figure 55. Read Electronic Manufacturer &
Device ID (REMS) Sequence (Command 90) (SPI Mode only)". The Device ID values are listed in "Table 9. ID
Definitions". If the one-byte address is initially set to 01h, then the device ID will be read first and then followed by
the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other.
The instruction is completed by driving CS# high.
9-22. QPI ID Read (QPIID)
User can execute this QPIID Read instruction to identify the Device ID and Manufacturer ID. The sequence of
issue QPIID instruction is CS# goes low→sending QPI ID instruction→→Data out on SO→CS# goes high. Most
significant bit (MSB) first.
After the command cycle, the device will immediately output data on the falling edge of SCLK. The manufacturer ID,
memory type, and device ID data byte will be output continuously, until the CS# goes high.
Table 9. ID Definitions
Command Type
RDID (JEDEC ID)
MX25U1635E
memory type
25
electronic ID
35
device ID
35
manufacturer ID
C2
RES
REMS
P/N: PM1472
manufacturer ID
C2
33
memory density
35
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-23. Enter Secured OTP (ENSO)
The ENSO instruction is for entering the additional 4K-bit secured OTP mode. While the device is in 4K-bit secured
OTP mode, main array access is not available. The additional 4K-bit secured OTP is independent from main array,
and may be used to store unique serial number for system identifier. After entering the Secured OTP mode, follow
standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated
again once it is lock-down.
The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Please note that WRSR/WRSCUR commands are not acceptable during the access of secure OTP region, once
security OTP is lock down, only read related commands are valid.
9-24. Exit Secured OTP (EXSO)
The EXSO instruction is for exiting the additional 4K-bit secured OTP mode.
The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-25. Read Security Register (RDSCUR)
The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read
at any time (even in program/erase/write status register/write security register condition) and continuously.
The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register
data out on SO→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. Please see "Figure 56. Read Security Register (RDSCUR) Sequence (Command 2B) (SPI
Mode)" & "Figure 57. Read Security Register (RDSCUR) Sequence (Command 2B) (QPI Mode)".
The definition of the Security Register bits is as below:
Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory or not. When it is
"0", it indicates non-factory lock; "1" indicates factory-lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for
customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 4K-bit Secured
OTP area cannot be updated any more.
P/N: PM1472
34
REV. 1.9, NOV. 08, 2013
MX25U1635E
Table 10. Security Register Definition
bit7
bit6
bit5
bit4
bit3
WPSEL
E_FAIL
P_FAIL
Reserved
0=normal
WP mode
1=individual
mode
(default=0)
0=normal
Erase
succeed
1=indicate
Erase failed
(default=0)
0=normal
Program
succeed
1=indicate
Program
failed
(default=0)
-
0=Erase
is not
suspended
1= Erase
suspended
(default=0)
Non-volatile
bit (OTP)
Volatile bit
Volatile bit
Volatile bit
Volatile bit
bit2
ESB
PSB
(Erase
(Program
Suspend bit) Suspend bit)
bit1
bit0
LDSO
Secured OTP
(indicate if
indicator bit
lock-down)
0 = not lock0=Program
down
0 = nonis not
1 = lock-down
factory
suspended
(cannot
lock
1= Program
program/
1 = factory
suspended
lock
erase
(default=0)
OTP)
Non-volatile
Non-volatile
Volatile bit
bit
bit (OTP)
(OTP)
9-26. Write Security Register (WRSCUR)
The WRSCUR instruction is for setting the values of Security Register Bits. The WREN (Write Enable) instruction is
required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO bit)
for customer to lock-down the 4K-bit Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area
cannot be updated any more. The LDSO bit is an OTP bit. Once the LDSO bit is set, the value of LDSO bit can not
be altered any more.
The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. Please see "Figure 58. Write Security Register (WRSCUR) Sequence (Command 2F) (SPI
Mode)" & "Figure 59. Write Security Register (WRSCUR) Sequence (Command 2F) (QPI Mode)".
The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed.
P/N: PM1472
35
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-27. Write Protection Selection (WPSEL)
There are two write protection methods, (1) BP protection mode (2) individual block protection mode. If WPSEL=0,
flash is under BP protection mode . If WPSEL=1, flash is under individual block protection mode. The default value
of WPSEL is “0”. WPSEL command can be used to set WPSEL=1. Please note that WPSEL is an OTP bit. Once
WPSEL is set to 1, there is no chance to recovery WPSEL back to “0”. If the flash is put on BP mode, the
individual block protection mode is disabled. Contrarily, if flash is on the individual block protection mode, the BP
mode is disabled.
Every time after the system is powered-on, the Security Register bit 7 is checked. If WPSEL=1, all the
blocks and sectors will be write protected by default. User may only unlock the blocks or sectors via SBULK
and GBULK instructions. Program or erase functions can only be operated after the Unlock instruction is executed.
BP protection mode, WPSEL=0:
ARRAY is protected by BP3~BP0 and BP3~BP0 bits are protected by “SRWD=1 and WP#=0”, where SRWD is bit 7
of status register that can be set by WRSR command.
Individual block protection mode, WPSEL=1:
Blocks are individually protected by their own SRAM lock bits which are set to “1” after power up. SBULK and SBLK
command can set SRAM lock bit to “0” and “1”. When the system accepts and executes WPSEL instruction, bit
7 in the security register will be set. It will activate SBLK, SBULK, RDBLOCK, GBLK, GBULK etc instructions to
conduct block lock protection and replace the original Software Protect Mode (SPM) use (BP3~BP0) indicated block
methods. Under the individual block protection mode (WPSEL=1), hardware protection is performed by driving
WP#=0. Once WP#=0 all array blocks/sectors are protected regardless of the contents of SRAM lock bits.
The sequence of issuing WPSEL instruction is: CS# goes low → sending WPSEL instruction to enter the individual
block protect mode → CS# goes high.
WPSEL instruction function flow is as follows:
Figure 10. BP and SRWD if WPSEL=0
WPB pin
BP3
BP2
BP1
BP0
SRWD
64KB
64KB
64KB
.
.
.
(1) BP3~BP0 is used to define the protection group region.
(The protected area size see "Table 2. Protected Area
Sizes")
(2) “SRWD=1 and WPB=0” is used to protect BP3~BP0. In this
case, SRWD and BP3~BP0 of status register bits can not
be changed by WRSR
64KB
P/N: PM1472
36
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 11. The individual block lock mode is effective after setting WPSEL=1
SRAM
SRAM
…
…
TOP 4KBx16
Sectors
4KB
4KB
4KB
SRAM
SRAM
…
64KB
SRAM
…
……
Uniform
64KB blocks
64KB
4KB
SRAM
…
…
Bottom
4KBx16
Sectors
4KB
SRAM
• Power-Up: All SRAM bits=1 (all blocks are default protected).
All array cannot be programmed/erased
• SBLK/SBULK(36h/39h):
- SBLK(36h): Set SRAM bit=1 (protect) : array can not be
programmed/erased
- SBULK(39h): Set SRAM bit=0 (unprotect): array can be
programmed/erased
- All top 4KBx16 sectors and bottom 4KBx16 sectors and other 64KB uniform blocks can be protected and
unprotected SRAM bits individually by SBLK/SBULK
command set.
• GBLK/GBULK(7Eh/98h):
- GBLK(7Eh): Set all SRAM bits=1,whole chip are protected
and cannot be programmed/erased.
- GBULK(98h): Set all SRAM bits=0,whole chip are unprotected and can be programmed/erased.
- All sectors and blocks SRAM bits of whole chip can be
protected and unprotected at one time by GBLK/GBULK
command set.
• RDBLOCK(3Ch):
- use RDBLOCK mode to check the SRAM bits status after
SBULK /SBLK/GBULK/GBLK command set.
SBULK / SBLK / GBULK / GBLK / RDBLOCK
P/N: PM1472
37
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 12. WPSEL Flow
start
WREN command
RDSCUR(2Bh) command
Yes
WPSEL=1?
No
WPSEL disable,
block protected by BP[3:0]
WPSEL(68h) command
RDSR command
WIP=0?
No
Yes
RDSCUR(2Bh) command
WPSEL=1?
No
Yes
WPSEL set successfully
WPSEL set fail
WPSEL enable.
Block protected by individual lock
(SBLK, SBULK, … etc).
P/N: PM1472
38
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-28. Single Block Lock/Unlock Protection (SBLK/SBULK)
These instructions are only effective after WPSEL was executed. The SBLK instruction is for write protection a
specified block (or sector) of memory, using AMAX-A16 or (AMAX-A12) address bits to assign a 64Kbyte block (or 4K
bytes sector) to be protected as read only. The SBULK instruction will cancel the block (or sector) write protection
state. This feature allows user to stop protecting the entire block (or sector) through the chip unprotect command
(GBULK).
The WREN (Write Enable) instruction is required before issuing SBLK/SBULK instruction.
The sequence of issuing SBLK/SBULK instruction is: CS# goes low → send SBLK/SBULK (36h/39h)
instruction→send 3 address bytes assign one block (or sector) to be protected on SI pin → CS# goes high. The CS#
must go high exactly at the byte boundary, otherwise the instruction will be rejected and not be executed.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
SBLK/SBULK instruction function flow is as follows:
Figure 13. Block Lock Flow
Start
RDSCUR(2Bh) command
WPSEL=1?
No
WPSEL command
Yes
WREN command
SBLK command
( 36h + 24bit address )
RDSR command
WIP=0?
No
Yes
RDBLOCK command
( 3Ch + 24bit address )
Data = FFh ?
No
Yes
Block lock successfully
Lock another block?
Block lock fail
Yes
No
Block lock
P/N: PM1472
completed
39
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 14. Block Unlock Flow
start
RDSCUR(2Bh) command
WPSEL=1?
No
WPSEL command
Yes
WREN command
SBULK command
( 39h + 24bit address )
RDSR command
No
WIP=0?
Yes
RDBLOCK command to verify
( 3Ch + 24bit address )
Data = FF ?
Yes
No
Block unlock successfully
Unlock another block?
Block unlock fail
Yes
Unlock block completed?
P/N: PM1472
40
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-29. Read Block Lock Status (RDBLOCK)
This instruction is only effective after WPSEL was executed. The RDBLOCK instruction is for reading the status
of protection lock of a specified block (or sector), using AMAX-A16 (or AMAX-A12) address bits to assign a 64K bytes
block (4K bytes sector) and read protection lock status bit which the first byte of Read-out cycle. The status bit is "1"
to indicate that this block has be protected, that user can read only but cannot write/program /erase this block. The
status bit is "0" to indicate that this block hasn't be protected, and user can read and write this block.
The sequence of issuing RDBLOCK instruction is: CS# goes low → send RDBLOCK (3Ch) instruction → send 3
address bytes to assign one block on SI pin → read block's protection lock status bit on SO pin → CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-30. Gang Block Lock/Unlock (GBLK/GBULK)
These instructions are only effective after WPSEL was executed. The GBLK/GBULK instruction is for enable/disable
the lock protection block of the whole chip.
The WREN (Write Enable) instruction is required before issuing GBLK/GBULK instruction.
The sequence of issuing GBLK/GBULK instruction is: CS# goes low → send GBLK/GBULK (7Eh/98h) instruction
→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be executed.
9-31. Program/Erase Suspend/Resume
The device allow the interruption of Sector-Erase, Block-Erase or Page-Program operations and conduct other
operations. Details as follows.
To enter the suspend/resume mode: issuing B0h for suspend; 30h for resume (SPI/QPI all acceptable)
Read security register bit2 (PSB) and bit3 (ESB) (please refer to "Table 10. Security Register Definition") to check
suspend ready information.
For "Suspend to Read", "Resume to Read", "Resume to Suspend" timing specification please note "Figure 66.
Suspend to Read Latency", "Figure 67. Resume to Read Latency" and "Figure 68. Resume to Suspend Latency".
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
P/N: PM1472
41
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-32. Erase Suspend
Erase suspend allow the interruption of all erase operations.
After erase suspend, WEL bit will be clear, only read related, resume and reset command can be accepted
unconditionally. (including: 03h, 0Bh, BBh, EBh, E7h, 9Fh, AFh, 90h, 05h, 2Bh, B1h, C1h, 5Ah, 3Ch, 30h, 66h, 99h,
C0h, 35h, F5h, 00h, ABh)
For erase suspend to program operation, the programming command (38, 02) can be accepted under conditions as
follows:
The bank is divided into 16 banks in this device, each bank's density is 4Mb. While conducting erase suspend in
one bank, the programming operation that follows can only be conducted in one of the other banks and cannot be
conducted in the bank executing the suspend operation. The boundaries of the banks are illustrated as below table.
MX25U1635E
BANK (4M bit)
Address Range
3
180000h-1FFFFFh
2
100000h-17FFFFh
1
080000h-0FFFFFh
0
000000h-07FFFFh
After erase suspend command has been issued, latency time 18us is needed before issue another command. For
"Suspend to Read", "Resume to Read", "Resume to Suspend" timing specification please note "Figure 66. Suspend
to Read Latency", "Figure 67. Resume to Read Latency" and "Figure 68. Resume to Suspend Latency".
Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use ESB to identify the
state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is set to "1". ESB is
cleared to "0" after erase operation resumes.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
When ESB bit is issued, the Write Enable Latch (WEL) bit will be reset.
See "Figure 66. Suspend to Read Latency" for Suspend to Read latency.
9-33. Program Suspend
Program suspend allows the interruption of all program operations.
After program suspend, WEL bit will be cleared, only read related, resume and reset command can be accepted.
(including: 03h, 0Bh, BBh, EBh, E7h, 9Fh, AFh, 90h, 05h, 2Bh, B1h, C1h, 5Ah, 3Ch, 30h, 66h, 99h, C0h, 35h, F5h,
00h, ABh)
After program suspend command has been issued, latency time 18us is needed before issue another command.
For "Suspend to Read", "Resume to Read", "Resume to Suspend" timing specification please note "Figure 66.
Suspend to Read Latency", "Figure 67. Resume to Read Latency" and "Figure 68. Resume to Suspend Latency".
Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may use PSB to identify the
state of flash memory. After the flash memory is suspended by Program Suspend command, PSB is set to "1". PSB
is cleared to "0" after program operation resumes.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
P/N: PM1472
42
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-34. Write-Resume
The Write operation is being resumed when Write-Resume instruction issued. ESB or PSB (suspend status bit) in
Status register will be changed back to “0”
The operation of Write-Resume is as follows: CS# drives low → send write resume command cycle (30H) → drive
CS# high. By polling Busy Bit in status register, the internal write operation status could be checked to be completed
or not. The user may also wait the time lag of TSE, TBE, TPP for Sector-erase, Block-erase or Page-programming.
WREN (command "06" is not required to issue before resume. Resume to another suspend operation requires
latency time. Please refer to "Figure 68. Resume to Suspend Latency".
Please note that, if "performance enhance mode" is executed during suspend operation, the device can not be
resume. To restart the write command, disable the "performance enhance mode" is required. After the "performance
enhance mode" is disable, the write-resume command is effective.
9-35. No Operation (NOP)
The "No Operation" command is only able to terminate the Reset Enable (RSTEN) command and will not affect any
other command.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-36. Software Reset (Reset-Enable (RSTEN) and Reset (RST))
The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command and Reset (RST)
command. It returns the device to a standby mode. All the volatile bits and settings will be cleared then, which
makes the device return to the default status as power on.
To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the
Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will
be invalid.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. Please refer to "Figure 63. Reset Sequence (SPI mode)" and "Figure 64. Reset Sequence (QPI
mode)".
If the Reset command is executed during program or erase operation, the operation will be disabled, the data under
processing could be damaged or lost.
The reset time is different depending on the last operation. Longer latency time is required to recover from a
program operation than from other operations.
9-37. Reset Quad I/O (RSTQIO)
To reset the QPI mode, the RSTQIO (F5H) command is required. After the RSTQIO command is issued, the device
returns from QPI mode (4 I/O interface in command cycles) to SPI mode (1 I/O interface in command cycles).
Note:
For EQIO and RSTQIO commands, CS# high width has to follow "write spec" tSHSL for next instruction.
P/N: PM1472
43
REV. 1.9, NOV. 08, 2013
MX25U1635E
9-38. Read SFDP Mode (RDSFDP)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional
and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables
can be interrogated by host system software to enable adjustments needed to accommodate divergent features
from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on
CFI.
The sequence of issuing RDSFDP instruction is CS# goes low→send RDSFDP instruction (5Ah)→send 3 address
bytes on SI pin→send 1 dummy byte on SI pin→read SFDP code on SO→to end RDSFDP operation can use CS#
to high at any time during data out.
SFDP is a JEDEC Standard, JESD216.
Figure 15. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
SO
24 BIT ADDRESS
23 22 21
5Ah
3
2
1
0
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Cycle
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
5
3
2
1
0
7
MSB
MSB
P/N: PM1472
4
44
6
5
4
3
2
1
0
7
MSB
REV. 1.9, NOV. 08, 2013
MX25U1635E
Table 11. Signature and Parameter Identification Data Values
Description
SFDP Signature
Comment
Fixed: 50444653h
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
00h
07:00
53h
Data
(h)
53h
01h
15:08
46h
46h
02h
23:16
44h
44h
03h
31:24
50h
50h
SFDP Minor Revision Number
Start from 00h
04h
07:00
00h
00h
SFDP Major Revision Number
Start from 01h
05h
15:08
01h
01h
Number of Parameter Headers
This number is 0-based. Therefore,
0 indicates 1 parameter header.
06h
23:16
01h
01h
07h
31:24
FFh
FFh
00h: it indicates a JEDEC specified
header.
08h
07:00
00h
00h
Start from 00h
09h
15:08
00h
00h
Start from 01h
0Ah
23:16
01h
01h
How many DWORDs in the
Parameter table
0Bh
31:24
09h
09h
0Ch
07:00
30h
30h
0Dh
15:08
00h
00h
0Eh
23:16
00h
00h
0Fh
31:24
FFh
FFh
it indicates Macronix manufacturer
ID
10h
07:00
C2h
C2h
Start from 00h
11h
15:08
00h
00h
Start from 01h
12h
23:16
01h
01h
How many DWORDs in the
Parameter table
13h
31:24
04h
04h
14h
07:00
60h
60h
15h
15:08
00h
00h
16h
23:16
00h
00h
17h
31:24
FFh
FFh
Unused
ID number (JEDEC)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
First address of JEDEC Flash
Parameter table
Unused
ID number
(Macronix manufacturer ID)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
First address of Macronix Flash
Parameter table
Unused
P/N: PM1472
45
REV. 1.9, NOV. 08, 2013
MX25U1635E
Table 12. Parameter Table (0): JEDEC Flash Parameter Tables
Description
Comment
Block/Sector Erase sizes
00: Reserved, 01: 4KB erase,
10: Reserved,
11: not support 4KB erase
Write Granularity
0: 1Byte, 1: 64Byte or larger
Write Enable Instruction Required 0: not required
1: required 00h to be written to the
for Writing to Volatile Status
status register
Registers
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
01b
02
1b
03
0b
30h
0: use 50h opcode,
1: use 06h opcode
Write Enable Opcode Select for
Note: If target flash status register is
Writing to Volatile Status Registers
nonvolatile, then bits 3 and 4 must
be set to 00b.
Contains 111b and can never be
Unused
changed
4KB Erase Opcode
01:00
31h
Data
(h)
E5h
04
0b
07:05
111b
15:08
20h
16
0b
18:17
00b
19
0b
20
1b
20h
(1-1-2) Fast Read (Note2)
0=not support 1=support
Address Bytes Number used in
addressing flash array
Double Transfer Rate (DTR)
Clocking
00: 3Byte only, 01: 3 or 4Byte,
10: 4Byte only, 11: Reserved
(1-2-2) Fast Read
0=not support 1=support
(1-4-4) Fast Read
0=not support 1=support
21
1b
(1-1-4) Fast Read
0=not support 1=support
22
0b
23
1b
33h
31:24
FFh
37h:34h
31:00
00FF FFFFh
0=not support 1=support
32h
Unused
Unused
Flash Memory Density
(1-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states (Note3)
Clocks) not support
(1-4-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits (Note4)
38h
(1-4-4) Fast Read Opcode
39h
(1-1-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(1-1-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits
3Ah
(1-1-4) Fast Read Opcode
3Bh
P/N: PM1472
46
04:00
0 0100b
07:05
010b
15:08
EBh
20:16
0 0000b
23:21
000b
31:24
FFh
B0h
FFh
44h
EBh
00h
FFh
REV. 1.9, NOV. 08, 2013
MX25U1635E
Description
Comment
(1-1-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(1-1-2) Fast Read Number of
000b: Mode Bits not support
Mode Bits
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
3Ch
(1-1-2) Fast Read Opcode
3Dh
(1-2-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(1-2-2) Fast Read Number of
000b: Mode Bits not support
Mode Bits
3Eh
(1-2-2) Fast Read Opcode
3Fh
(2-2-2) Fast Read
0=not support 1=support
Unused
(4-4-4) Fast Read
0=not support 1=support
40h
Unused
04:00
0 0000b
07:05
000b
15:08
FFh
20:16
0 0100b
23:21
000b
31:24
BBh
00
0b
03:01
111b
04
1b
07:05
111b
Data
(h)
00h
FFh
04h
BBh
FEh
Unused
43h:41h
31:08
FFh
FFh
Unused
45h:44h
15:00
FFh
FFh
20:16
0 0000b
23:21
000b
(2-2-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(2-2-2) Fast Read Number of
000b: Mode Bits not support
Mode Bits
46h
(2-2-2) Fast Read Opcode
47h
31:24
FFh
FFh
49h:48h
15:00
FFh
FFh
20:16
0 0100b
23:21
010b
Unused
00h
(4-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(4-4-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits
4Ah
(4-4-4) Fast Read Opcode
4Bh
31:24
EBh
EBh
4Ch
07:00
0Ch
0Ch
4Dh
15:08
20h
20h
4Eh
23:16
0Fh
0Fh
4Fh
31:24
52h
52h
50h
07:00
10h
10h
51h
15:08
D8h
D8h
52h
23:16
00h
00h
53h
31:24
FFh
FFh
Sector Type 1 Size
Sector/block size = 2^N bytes (Note5)
0x00b: this sector type doesn't exist
Sector Type 1 erase Opcode
Sector Type 2 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 2 erase Opcode
Sector Type 3 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 3 erase Opcode
Sector Type 4 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 4 erase Opcode
P/N: PM1472
47
44h
REV. 1.9, NOV. 08, 2013
MX25U1635E
Table 13. Parameter Table (1): Macronix Flash Parameter Tables
Description
Comment
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
Data
(h)
Vcc Supply Maximum Voltage
2000h=2.000V
2700h=2.700V
3600h=3.600V
61h:60h
07:00
15:08
00h
20h
00h
20h
Vcc Supply Minimum Voltage
1650h=1.650V
2250h=2.250V
2350h=2.350V
2700h=2.700V
63h:62h
23:16
31:24
50h
16h
50h
16h
H/W Reset# pin
0=not support 1=support
00
0b
H/W Hold# pin
0=not support 1=support
01
0b
Deep Power Down Mode
0=not support 1=support
02
1b
S/W Reset
0=not support 1=support
03
1b
S/W Reset Opcode
Reset Enable (66h) should be issued 65h:64h
before Reset Opcode
Program Suspend/Resume
0=not support 1=support
12
1b
Erase Suspend/Resume
0=not support 1=support
13
1b
14
1b
15
1b
66h
23:16
C0h
C0h
67h
31:24
64h
64h
Unused
Wrap-Around Read mode
0=not support 1=support
Wrap-Around Read mode Opcode
11:04
1001 1001b F99Ch
(99h)
Wrap-Around Read data length
08h:support 8B wrap-around read
16h:8B&16B
32h:8B&16B&32B
64h:8B&16B&32B&64B
Individual block lock
0=not support 1=support
00
1b
Individual block lock bit
(Volatile/Nonvolatile)
0=Volatile 1=Nonvolatile
01
0b
09:02
0011 0110b
(36h)
10
0b
11
1b
Individual block lock Opcode
Individual block lock Volatile
protect bit default protect status
0=protect 1=unprotect
Secured OTP
0=not support 1=support
Read Lock
0=not support 1=support
12
0b
Permanent Lock
0=not support 1=support
13
0b
Unused
15:14
11b
Unused
31:16
FFh
FFh
31:00
FFh
FFh
Unused
P/N: PM1472
6Bh:68h
6Fh:6Ch
48
C8D9h
REV. 1.9, NOV. 08, 2013
MX25U1635E
Note 1: h/b is hexadecimal or binary.
Note 2: (x-y-z) means I/O mode nomenclature used to indicate the number of active pins used for the opcode (x),
address (y), and data (z). At the present time, the only valid Read SFDP instruction modes are: (1-1-1), (2-2-2),
and (4-4-4)
Note 3: Wait States is required dummy clock cycles after the address bits or optional mode bits.
Note 4: Mode Bits is optional control bits that follow the address bits. These bits are driven by the system controller
if they are specified. (eg,read performance enhance toggling bits)
Note 5: 4KB=2^0Ch,32KB=2^0Fh,64KB=2^10h
Note 6: All unused and undefined area data is blank FFh.
P/N: PM1472
49
REV. 1.9, NOV. 08, 2013
MX25U1635E
10. POWER-ON STATE
The device is at the following states when power-up:
- Standby mode (please note it is not deep power-down mode)
- Write Enable Latch (WEL) bit is reset
The device must not be selected during power-up and power-down stage until the VCC reaches the following levels:
- VCC minimum at power-up stage and then after a delay of tVSL
- GND at power-down
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.
An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change
during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and
the flash device has no response to any command.
For further protection on the device, after VCC reaching the VWI level, a tPUW time delay is required before the
device is fully accessible for commands like write enable (WREN), page program (PP), quad page program (4PP),
sector erase (SE), block erase 32KB (BE32K), block erase (BE), chip erase (CE), WRSCUR and write status
register (WRSR). If the VCC does not reach the VCC minimum level, the correct operation is not guaranteed. The
write, erase, and program command should be sent after the below time delay:
- tPUW after VCC reached VWI level
- tVSL after VCC reached VCC minimum level
The device can accept read command after VCC reached VCC minimum and a time delay of tVSL, even time of
tPUW has not passed.
Please refer to the figure of "Figure 70. Power-up Timing".
Note:
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is
recommended. (generally around 0.1uF)
- At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response to
any command. The data corruption might occur during this stage if a write, program, erase cycle is in progress.
P/N: PM1472
50
REV. 1.9, NOV. 08, 2013
MX25U1635E
11. ELECTRICAL SPECIFICATIONS
11-1. Absolute Maximum Ratings
Rating
Value
Ambient Operating Temperature
Industrial grade
-40°C to 85°C
Storage Temperature
-65°C to 150°C
Applied Input Voltage
-0.5V to VCC+0.5V
Applied Output Voltage
-0.5V to VCC+0.5V
VCC to Ground Potential
-0.5V to +2.5V
NOTICE:
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. This is stress rating only and functional operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended period may affect reliability.
2. Specifications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot to VCC+1.0V or -1.0V for period up to 20ns.
Figure 17. Maximum Positive Overshoot Waveform
Figure 16. Maximum Negative Overshoot Waveform
20ns
0V
VCC+1.0V
-1.0V
2.0V
20ns
11-2. Capacitance
TA = 25°C, f = 1.0 MHz
Symbol Parameter
CIN
COUT
P/N: PM1472
Min.
Typ.
Max.
Unit
Input Capacitance
10
pF
VIN = 0V
Output Capacitance
25
pF
VOUT = 0V
51
Conditions
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 18. Input Test Waveforms and Measurement Level
Input timing reference level
0.8VCC
Output timing reference level
0.7VCC
AC
Measurement
Level
0.3VCC
0.2VCC
0.5VCC
Note: Input pulse rise and fall time are <5ns
Figure 19. Output Loading
25K ohm
DEVICE UNDER
TEST
CL
+1.8V
25K ohm
CL=30pF Including jig capacitance
P/N: PM1472
52
REV. 1.9, NOV. 08, 2013
MX25U1635E
Table 14. DC Characteristics
Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V
Symbol Parameter
Notes
Min.
Typ.
Max.
Units Test Conditions
ILI
Input Load Current
1
±2
uA
VCC = VCC Max,
VIN = VCC or GND
ILO
Output Leakage Current
1
±2
uA
VCC = VCC Max,
VOUT = VCC or GND
ISB1
VCC Standby Current
1
25
80
uA
VIN = VCC or GND,
CS# = VCC
ISB2
Deep Power-down
Current
2
15
uA
VIN = VCC or GND,
CS# = VCC
20
mA
f=104MHz, (4 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
15
mA
f=84MHz,
SCLK=0.1VCC/0.9VCC,
SO=Open
7
10
mA
f=33MHz,
SCLK=0.1VCC/0.9VCC,
SO=Open
20
25
mA
10
15
mA
1
20
25
mA
Erase in Progress,
CS#=VCC
1
20
25
mA
Erase in Progress,
CS#=VCC
-0.5
0.2VCC
V
0.8VCC
VCC+0.4
V
0.2
V
IOL = 100uA
V
IOH = -100uA
ICC1
VCC Read
VIL
VCC Program Current
(PP)
VCC Write Status
Register (WRSR) Current
VCC Sector/Block (32K,
64K) Erase Current
(SE/BE/BE32K)
VCC Chip Erase Current
(CE)
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
ICC2
ICC3
ICC4
ICC5
1
1
VCC-0.2
Program in Progress,
CS# = VCC
Program status register in
progress, CS#=VCC
Notes :
1. Typical values at VCC = 1.8V, T = 25°C. These currents are valid for all product versions (package and speeds).
2. Typical value is calculated by simulation.
P/N: PM1472
53
REV. 1.9, NOV. 08, 2013
MX25U1635E
Table 15. AC Characteristics
Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V
Symbol Alt. Parameter
Clock Frequency for the following instructions:
fSCLK
fC FAST_READ, RDSFDP, PP, 4PP, SE, BE, CE, DP, RES, RDP,
WREN, WRDI, RDID, RDSR, WRSR
fRSCLK
fR Clock Frequency for READ instructions
fT Clock Frequency for 2READ instructions
fTSCLK
fQ Clock Frequency for 4READ instructions (5)
Others (fSCLK)
tCH(1)(2) tCLH Clock High Time
Normal Read (fRSCLK)
Others (fSCLK)
tCL(1)(2) tCLL Clock Low Time
Normal Read (fRSCLK)
tCLCH(2)
Clock Rise Time (3) (peak to peak)
tCHCL(2)
Clock Fall Time (3) (peak to peak)
tSLCH(2) tCSS CS# Active Setup Time (relative to SCLK)
tCHSL(2)
CS# Not Active Hold Time (relative to SCLK)
tDVCH tDSU Data In Setup Time
tCHDX(2) tDH Data In Hold Time
tCHSH
CS# Active Hold Time (relative to SCLK)
tSHCH
CS# Not Active Setup Time (relative to SCLK)
Read
tSHSL(3) tCSH CS# Deselect Time
Write/Erase/Program
tSHQZ(2) tDIS Output Disable Time
Clock Low to Output Valid Loading: 30pF
tCLQV
tV
Loading: 30pF/15pF
Loading: 15pF
tCLQX
tHO Output Hold Time
tWHSL
Write Protect Setup Time
tSHWL
Write Protect Hold Time
tDP(2)
CS# High to Deep Power-down Mode
tRES1(2)
CS# High to Standby Mode without Electronic Signature Read
tRES2(2)
CS# High to Standby Mode with Electronic Signature Read
tRCR
Recovery Time from Read
tRCP
Recovery Time from Program
tRCE
Recovery Time from Erase
tW
Write Status Register Cycle Time
tBP
Byte-Program
tPP
Page Program Cycle Time
tSE
Sector Erase Cycle Time
tBE32
Block Erase (32KB) Cycle Time
tBE
Block Erase (64KB) Cycle Time
tCE
Chip Erase Cycle Time
Min.
Typ.
D.C.
4.5
13
4.5
13
0.1
0.1
4
4
2
3
5
7
12
30
Max.
Unit
104
MHz
33
84
84/104
MHz
MHz
MHz
ns
ns
ns
ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
us
us
us
us
ms
ms
us
ms
ms
ms
ms
s
8
8
6
1
20
100
10
1.2
45
250
500
9
10
10
10
20
20
12
40
30
3
200
1000
2000
20
Notes:
1. tCH + tCL must be greater than or equal to 1/ Frequency.
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
4. Test condition is shown as "Figure 18. Input Test Waveforms and Measurement Level" and "Figure 19. Output
Loading"
5. When dummy cycle=4 (In both QPI & SPI mode), clock rate=84MHz; when dummy cycle=6 (In both QPI & SPI
mode), clock rate=104MHz.
P/N: PM1472
54
REV. 1.9, NOV. 08, 2013
MX25U1635E
12. Timing Analysis
Figure 20. Serial Input Timing
tSHSL
CS#
tCHSL
tSLCH
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
tCLCH
LSB
MSB
SI
High-Z
SO
Figure 21. Output Timing
CS#
tCH
SCLK
tCLQV
tCLQX
tCL
tCLQV
tCLQX
LSB
SO
SI
P/N: PM1472
tSHQZ
ADDR.LSB IN
55
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 22. WP# Setup Timing and Hold Timing during WRSR when SRWD=1
WP#
tSHWL
tWHSL
CS#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCLK
01h
SI
High-Z
SO
Figure 23. Write Enable (WREN) Sequence (Command 06) (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
06h
High-Z
SO
Figure 24. Write Enable (WREN) Sequence (Command 06) (QPI Mode)
CS#
0
Mode 3
1
SCLK
Mode 0
Command
06h
SIO[3:0]
P/N: PM1472
56
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 25. Write Disable (WRDI) Sequence (Command 04) (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
04h
High-Z
SO
Figure 26. Write Disable (WRDI) Sequence (Command 04) (QPI Mode)
CS#
0
Mode 3
1
SCLK
Mode 0
Command
04h
SIO[3:0]
Figure 27. Read Identification (RDID) Sequence (Command 9F) (SPI mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18
28 29 30 31
SCLK
Mode 0
Command
SI
9Fh
Manufacturer Identification
SO
High-Z
7
6
5
3
MSB
P/N: PM1472
2
1
Device Identification
0 15 14 13
3
2
1
0
MSB
57
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 28. Read Status Register (RDSR) Sequence (Command 05) (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
05h
SI
Status Register Out
High-Z
SO
7
6
5
4
3
2
Status Register Out
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 29. Read Status Register (RDSR) Sequence (Command 05) (QPI Mode)
CS#
Mode 3 0
1
2
3
4
5
6
7
8
N
SCLK
Mode 0
05h H0 L0 H0 L0 H0 L0
SIO[3:0]
H0 L0
MSB LSB
Status Byte Status Byte Status Byte
Status Byte
Figure 30. Write Status Register (WRSR) Sequence (Command 01) (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
SI
SO
command
Status
Register In
01h
7
6
5
4
3
2
1
0
MSB
High-Z
Note : Also supported in QPI mode with command and subsequent input/output in Quad I/O mode.
P/N: PM1472
58
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 31. Write Status Register (WRSR) Sequence (Command 01) (QPI Mode)
CS#
Mode 3
SCLK
Mode 0
SIO0
C4, C0
4
0
SIO1
C5, C1
5
1
SIO2
C6, C2
6
2
SIO3
C7, C3
7
3
Status
Register IN
Command
Figure 32. Read Data Bytes (READ) Sequence (Command 03) (SPI Mode only) (33MHz)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Mode 0
SI
command
03h
24-Bit Address
23 22 21
3
2
1
0
MSB
SO
Data Out 1
High-Z
7
6
5
4
3
2
Data Out 2
1
0
7
MSB
P/N: PM1472
59
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 33. Read at Higher Speed (FAST_READ) Sequence (Command 0B) (SPI Mode) (104MHz)
CS#
SCLK
Mode 3
0
1
2
Mode 0
3
4
5
6
7
8
9 10
Command
SI
28 29 30 31
24-Bit Address
23 22 21
0Bh
3
2
1
0
High-Z
SO
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Configurable
Dummy Cycle
7
SI
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
7
SO
6
5
4
3
2
1
7
0
6
5
4
3
2
MSB
MSB
1
0
7
MSB
Figure 34. Read at Higher Speed (FAST_READ) Sequence (Command 0B) (QPI Mode) (84MHz)
CS#
Mode 3
0
1
2
3
4
5
6
7
A5
A4
A3
A2
A1
A0
8
9
10
11
12
13
14
15
H1
L1
SCLK
Mode 0
Command
SIO(3:0)
0Bh
Data In
P/N: PM1472
X
X
X
X
H0
L0
MSB LSB MSB LSB
24-Bit Address
Data Out 1 Data Out 2
60
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 35. 2 x I/O Read Mode Sequence (Command BB) (SPI Mode only) (84MHz)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
18 19 20 21 22 23 24 25 26 27
9 10 11
SCLK
Mode 0
8 Bit Instruction
Data Output
BBh
address
bit22, bit20, bit18...bit0
data
bit6, bit4, bit2...bit0, bit6, bit4....
High Impedance
address
bit23, bit21, bit19...bit1
data
bit7, bit5, bit3...bit1, bit7, bit5....
SI/SIO0
SO/SIO1
4 dummy
cycle
12-Bit Address
Figure 36. 4 x I/O Read Mode Sequence (Command EB) (SPI Mode) (104MHz)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
n
SCLK
Mode 0
SI/SIO0
SO/SIO1
WP#/SIO2
NC/SIO3
8 Bit Instruction
6 Address cycles
Performance
enhance
indicator (Note)
4 dummy
cycles
Data Output
address
bit20, bit16..bit0
P4 P0
data
bit4, bit0, bit4....
High Impedance
address
bit21, bit17..bit1
P5 P1
data
bit5 bit1, bit5....
High Impedance
address
bit22, bit18..bit2
P6 P2
data
bit6 bit2, bit6....
High Impedance
address
bit23, bit19..bit3
P7 P3
data
bit7 bit3, bit7....
EBh
Note:
1. Also supported in QPI mode with command and subsequent input/output in Quad I/O mode and runs at 104MHz.
2. Hi-impedance is inhibited for the two clock cycles.
3. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited.
P/N: PM1472
61
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 37. 4 x I/O Read enhance performance Mode Sequence (Command EB) (SPI Mode) (104MHz)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
n
SCLK
Mode 0
8 Bit Instruction
WP#/SIO2
NC/SIO3
Performance
enhance
indicator (Note)
4 dummy
cycles
Data Output
address
bit20, bit16..bit0
P4 P0
data
bit4, bit0, bit4....
High Impedance
address
bit21, bit17..bit1
P5 P1
data
bit5 bit1, bit5....
High Impedance
address
bit22, bit18..bit2
P6 P2
data
bit6 bit2, bit6....
High Impedance
address
bit23, bit19..bit3
P7 P3
data
bit7 bit3, bit7....
EBh
SI/SIO0
SO/SIO1
6 Address cycles
CS#
n+1
...........
n+7 ...... n+9
........... n+13
...........
SCLK
6 Address cycles
Performance
enhance
indicator (Note)
4 dummy
cycles
Data Output
SI/SIO0
address
bit20, bit16..bit0
P4 P0
data
bit4, bit0, bit4....
SO/SIO1
address
bit21, bit17..bit1
P5 P1
data
bit5 bit1, bit5....
WP#/SIO2
address
bit22, bit18..bit2
P6 P2
data
bit6 bit2, bit6....
NC/SIO3
address
bit23, bit19..bit3
P7 P3
data
bit7 bit3, bit7....
Note: Performance enhance mode, if P7≠P3 & P6≠P2 & P5≠P1 & P4≠P0 (Toggling), ex: A5, 5A, 0F, if not using
performance enhance recommend to keep 1 or 0 in performance enhance indicator.
Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF
P/N: PM1472
62
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 38. 4 x I/O Read enhance performance Mode Sequence (Command EB) (QPI Mode) (104MHz)
CS#
Mode 3
0
1
2
3
4
5
6
7
A1
A0
8
9
10
11
12
13
14
15
16
17
H0
L0
H1
L1
SCLK
Mode 0
SIO[3:0]
A5
EBh
A4
A3
A2
X
X
X
X
MSB LSB MSB LSB
P(7:4) P(3:0)
Data In
4 dummy
cycles
performance
enhance
indicator
Data Out
CS#
n+1
.............
SCLK
Mode 0
SIO[3:0]
A5
A4
A3
A2
A1
X
A0
X
X
X
H0
6 Address cycles
L0
H1
L1
MSB LSB MSB LSB
P(7:4) P(3:0)
4 dummy
cycles
performance
enhance
indicator
Data Out
Figure 39. Page Program (PP) Sequence (Command 02) (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
2
1
0
7
6
5
3
2
1
0
2079
3
2078
23 22 21
02h
SI
Data Byte 1
2077
24-Bit Address
2076
Command
2075
Mode 0
4
1
0
MSB
MSB
2074
2073
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2072
CS#
SCLK
Data Byte 2
SI
7
6
MSB
P/N: PM1472
5
4
3
2
Data Byte 3
1
0
7
6
5
MSB
4
3
2
Data Byte 256
1
0
7
6
5
4
3
2
MSB
63
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 40. Page Program (PP) Sequence (Command 02) (QPI Mode)
CS#
Mode 3
0
1
2
SCLK
Mode 0
24-Bit Address
Command
SIO[3:0]
02h
A5
A4
A3
A2
A1
A0
H0
L0
H1
L1
H2
L2
H3
L3
Data Byte Data Byte Data Byte Data Byte
1
2
3
4
Data In
H255 L255
......
Data Byte
256
Figure 41. 4 x I/O Page Program (4PP) Sequence (Command 38) (SPI Mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21
SCLK
Mode 0
Data Data Data Data
Byte 1 Byte 2 Byte 3 Byte 4
6 Address cycle
20 16 12 8
4
0
4
0
4
0
4
0
4
0
SO/SIO1
21 17 13 9
5
1
5
1
5
1
5
1
5
1
WP#/SIO2
22 18 14 10
6
2
6
2
6
2
6
2
6
2
NC/SIO3
23 19 15 11
7
3
7
3
7
3
7
3
7
3
SI/SIO0
P/N: PM1472
Command
38h
64
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 42. Sector Erase (SE) Sequence (Command 20) (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Mode 0
24-Bit Address
Command
SI
23 22
20h
2
1
0
MSB
Figure 43. Sector Erase (SE) Sequence (Command 20) (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
24-Bit Address
Command
SIO[3:0]
20h A5 A4 A3 A2 A1 A0
MSB LSB
Figure 44. Block Erase 32KB (BE32K) Sequence (Command 52) (SPI Mode)
CS#
0
Mode 3
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Mode 0
24-Bit Address
Command
SI
23 22
52h
2
1
0
MSB
Figure 45. Block Erase 32KB (BE32K) Sequence (Command 52) (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
24-Bit Address
Command
SIO[3:0]
52h
A5 A4 A3 A2 A1 A0
MSB
P/N: PM1472
65
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 46. Block Erase (BE) Sequence (Command D8) (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Mode 0
24-Bit Address
Command
SI
23 22
D8h
2
1
0
MSB
Figure 47. Block Erase (BE) Sequence (Command D8) (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
24-Bit Address
Command
SIO[3:0]
A5 A4 A3 A2 A1 A0
D8h
MSB
Figure 48. Chip Erase (CE) Sequence (Command 60 or C7) (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
60h or C7h
Figure 49. Chip Erase (CE) Sequence (Command 60 or C7) (QPI Mode)
CS#
Mode 3
0
1
SCLK
Mode 0
Command
SIO[3:0]
P/N: PM1472
60h or C7h
66
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 50. Deep Power-down (DP) Sequence (Command B9) (SPI Mode)
CS#
0
Mode 3
1
2
3
4
5
6
tDP
7
SCLK
Mode 0
Command
B9h
SI
Deep Power-down Mode
Stand-by Mode
Figure 51. Deep Power-down (DP) Sequence (Command B9) (QPI Mode)
CS#
Mode 3
0
tDP
1
SCLK
Mode 0
Command
SIO[3:0]
B9h
Stand-by Mode
Deep Power-down Mode
Figure 52. RDP and Read Electronic Signature (RES) Sequence (Command AB) (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38
SCLK
Mode 0
Command
SI
ABh
tRES2
3 Dummy Bytes
23 22 21
3
2
1
0
MSB
SO
Electronic Signature Out
High-Z
7
6
5
4
3
2
1
0
MSB
Deep Power-down Mode
P/N: PM1472
67
Stand-by Mode
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 53. Release from Deep Power-down (RDP) Sequence (Command AB) (SPI Mode)
CS#
0
Mode 3
1
2
3
4
5
6
tRES1
7
SCLK
Mode 0
Command
SI
ABh
High-Z
SO
Deep Power-down Mode
Stand-by Mode
Figure 54. Release from Deep Power-down (RDP) Sequence (Command AB) (QPI Mode)
CS#
Mode 3
tRES1
0
1
SCLK
Mode 0
Command
SIO[3:0]
ABh
Deep Power-down Mode
P/N: PM1472
68
Stand-by Mode
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 55. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90) (SPI Mode only)
CS#
SCLK
Mode 3
0
1
2
Mode 0
3
4
5
6
7
8
Command
SI
9 10
2 Dummy Bytes
15 14 13
90h
3
2
1
0
High-Z
SO
CS#
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
ADD (1)
SI
7
6
5
4
3
2
1
0
Manufacturer ID
SO
7
6
5
4
3
2
1
Device ID
0
7
6
5
4
3
2
MSB
MSB
1
0
7
MSB
Notes:
(1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first.
(2) Instruction is either 90(hex).
P/N: PM1472
69
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 56. Read Security Register (RDSCUR) Sequence (Command 2B) (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
2B
SI
SO
Security Register Out
High-Z
7
6
5
4
3
2
1
Security Register Out
0
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 57. Read Security Register (RDSCUR) Sequence (Command 2B) (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
N
SCLK
Mode 0
SIO[3:0]
2B
H0 L0 H0 L0 H0 L0
H0 L0
MSB LSB
Status Byte Status Byte Status Byte
P/N: PM1472
70
Status Byte
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 58. Write Security Register (WRSCUR) Sequence (Command 2F) (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
2F
Figure 59. Write Security Register (WRSCUR) Sequence (Command 2F) (QPI Mode)
CS#
0
Mode 3
1
SCLK
Mode 0
Command
2F
SIO[3:0]
P/N: PM1472
71
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 60. Word Read Quad I/O (W4READ) Sequence (Command E7) (SPI Mode only, 84MHz)
CS#
Mode 3
SCLK
０
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Mode ０
Instruction (E7h)
IO Switches from Input to Output
IO0
4
0 4
0
4
0
4
0
4
0
4
0
4
IO1
5
1 5
1
5
1
5
1
5
1
5
1
5
IO2
6
2 6
2
6
2
6
2
6
2
6
2
6
IO3
7
3 7
3
7
3
7
3
7
3
7
3
7
A23-16 A15-8 A7-0
Dummy
Byte 1 Byte 2 Byte 3
Figure 61. Performance Enhance Mode Reset for Fast Read Quad I/O (SPI Mode)
Mode Bit Reset
for Quad I/O
CS#
Mode 3
SCLK
P/N: PM1472
０ 1
2
3
4
5
6
7
Mode ０
Mode 3
Mode ０
SIO0
FFh
SIO1
Don’t Care
SIO2
Don’t Care
SIO3
Don’t Care
72
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 62. Performance Enhance Mode Reset for Fast Read Quad I/O (QPI Mode)
Mode Bit Reset
for Quad I/O
CS#
Mode 3
SCLK
０ 1
2
3
4
5
6
Mode 3
7
Mode ０
Mode ０
FFFFFFFFh
SIO[3:0]
Figure 63. Reset Sequence (SPI mode)
CS#
SCLK
Mode 3
Mode 3
Mode 0
Mode 0
Command
Command
99h
66h
SIO0
Figure 64. Reset Sequence (QPI mode)
tSHSL
CS#
Mode 3
MODE 3
Mode 3
SCLK
Mode 0
MODE 0
Command
SIO[3:0]
Mode 0
Command
66h
99h
Figure 65. Enable Quad I/O Sequence
CS#
Mode 3
SCLK
0
1
2
3
4
5
6
7
Mode 0
SIO0
35h
SIO[3:1]
P/N: PM1472
73
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 66. Suspend to Read Latency
CS#
Program latency : 18us
Erase latency: 18us
Suspend Command
[B0]
Read Command
Figure 67. Resume to Read Latency
CS#
TSE/TBE/TPP
Resume Command
[30]
Read Command
Figure 68. Resume to Suspend Latency
Program Suspend Resume latency: 100us
Erase Suspend Resume latency: 200us
CS#
Suspend
Command
[B0]
Resume Command
[30]
Figure 69. Software Reset Recovery
Stand-by Mode
CS#
66
99
tRCR
tRCP
tRCE
Mode
tRCR: 20us (Recovery Time from Read)
tRCP: 20us (Recovery Time from Program)
tRCE: 12ms (Recovery Time from Erase)
P/N: PM1472
74
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 70. Power-up Timing
VCC
VCC(max)
Program, Erase and Write Commands are Ignored
Chip Selection is Not Allowed
VCC(min)
tVSL
Reset State
of the
Flash
Read Command is
allowed
Device is fully
accessible
VWI
tPUW
time
Note: VCC (max.) is 2.0V and VCC (min.) is 1.65V.
Table 16. Power-Up Timing and VWI Threshold
Symbol
tVSL(1)
tPUW(1)
VWI(1)
Parameter
VCC(min) to CS# low (VCC Rise Time)
Time delay to Write instruction
Command Inhibit Voltage
Min.
300
1
1.0
Max.
10
1.4
Unit
us
ms
V
Note: 1. These parameters are characterized only.
12-1. Initial Delivery State
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status
Register contains 00h (all Status Register bits are 0).
P/N: PM1472
75
REV. 1.9, NOV. 08, 2013
MX25U1635E
13. OPERATING CONDITIONS
At Device Power-Up and Power-Down
AC timing illustrated in "Figure 71. AC Timing at Device Power-Up" and "Figure 72. Power-Down Sequence" are
for the supply voltages and the control signals at device power-up and power-down. If the timing in the figures is
ignored, the device will not operate correctly.
During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be
selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL.
Figure 71. AC Timing at Device Power-Up
VCC
VCC(min)
GND
tVR
tSHSL
CS#
tSLCH
tCHSL
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
LSB IN
MSB IN
SI
High Impedance
SO
Symbol
tVR
tCLCH
Parameter
VCC Rise Time
Notes
1
Min.
20
Max.
500000
Unit
us/V
Notes :
1. Sampled, not 100% tested.
2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to
"Table 15. AC Characteristics".
P/N: PM1472
76
REV. 1.9, NOV. 08, 2013
MX25U1635E
Figure 72. Power-Down Sequence
During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation.
VCC
CS#
SCLK
P/N: PM1472
77
REV. 1.9, NOV. 08, 2013
MX25U1635E
14. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Min.
Typ. (1)
Max. (2)
Unit
40
ms
Write Status Register Cycle Time
Sector Erase Cycle Time (4KB)
45
200
ms
Block Erase Cycle Time (32KB)
250
1000
ms
Block Erase Cycle Time (64KB)
500
2000
ms
Chip Erase Cycle Time
9
20
s
Byte Program Time (via page program command)
10
30
us
Page Program Time
1.2
3
ms
Erase/Program Cycle
100,000
cycles
Note:
1. Typical program and erase time assumes the following conditions: 25°C, 1.8V, and checkerboard pattern.
2. Under worst conditions of 85°C and 1.65V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming
command.
4. The maximum chip programming time is evaluated under the worst conditions of 0C, VCC=1.8V, and 100K cycle
with 90% confidence level.
15. DATA RETENTION
PARAMETER
Condition
Min.
Data retention
55˚C
20
Max.
UNIT
years
16. LATCH-UP CHARACTERISTICS
Min.
Max.
Input Voltage with respect to GND on all power pins, SI, CS#
-1.0V
2 VCCmax
Input Voltage with respect to GND on SO
-1.0V
VCC + 1.0V
-100mA
+100mA
Current
Includes all pins except VCC. Test conditions: VCC = 1.8V, one pin at a time.
P/N: PM1472
78
REV. 1.9, NOV. 08, 2013
MX25U1635E
17. ORDERING INFORMATION
Part No.
Clock (MHz)
Temperature
MX25U1635EM1I-10G
104
-40°C~85°C
MX25U1635EM2I-10G
104
-40°C~85°C
MX25U1635EZUI-10G
104
-40°C~85°C
MX25U1635EZNI-10G
104
-40°C~85°C
P/N: PM1472
79
Package
8-SOP
(150mil)
8-SOP
(200mil)
8-USON
(4x4mm)
8-WSON
(6x5mm)
Remark
REV. 1.9, NOV. 08, 2013
MX25U1635E
18. PART NAME DESCRIPTION
MX 25
U 1635E
M1
I
10 G
OPTION:
G: RoHS Compliant and Halogen-free
SPEED:
10: 104MHz
TEMPERATURE RANGE:
I: Industrial (-40°C to 85°C)
PACKAGE:
M1: 150mil 8-SOP
M2: 200mil 8-SOP
ZU: 8-USON
ZN: 8-WSON
DENSITY & MODE:
1635E: 16Mb
TYPE:
U: 1.8V
DEVICE:
25: Serial Flash
P/N: PM1472
80
REV. 1.9, NOV. 08, 2013
MX25U1635E
19. PACKAGE INFORMATION
P/N: PM1472
81
REV. 1.9, NOV. 08, 2013
MX25U1635E
P/N: PM1472
82
REV. 1.9, NOV. 08, 2013
MX25U1635E
P/N: PM1472
83
REV. 1.9, NOV. 08, 2013
MX25U1635E
P/N: PM1472
84
REV. 1.9, NOV. 08, 2013
MX25U1635E
20. REVISION HISTORY
Revision No. Description
Page
Date
0.01
1. Added MXSMIOTM logo and 4 I/O 104MHz specifications
P6
JUL/24/2009
2. Take out 8WSON and 200mil 8-SOP package outline
P9
3. Added software reset
P11
4. Corrected supporting instructions
P16
5. Modified dummy cycle numbers (from 2 to 4)
P17
6. Added QPI, Write suspend/resume commands
P19
7. Added QPI operations in the command descriptions
ALL
8. AC/DC modifications; Write suspend features modify
P6,38,39,45
9. Updated SPI & QPI commands & descriptions
ALL
10. Remove loading relevance to clock rate
P6
11. Modify 32Mb WSON package as USON package
P7
12. Add WIP, WEL polling sequence description
P22
13. Add description about performance enhance mode not supported P27
in 2-I/O mode
14. Add 104MHz note in fTSCLK
P45
15. Added 8-SOP 200mil package for 16Mb; modified 32Mb from
P7
USON to WSON
16. Added 8WSON package information
P9
17. Added RDSR flow charts
P22~24
18. Change CFIRD command from A5 to 5A
P19,40,41
19. Modified EPN for package information correction and speed grade P70,71
(from -12G to -10G)
20. Modified Erase/Program time spec
P6,48,69
21. Added program/erase flow description
P22,23
22. Modified performance enhance mode toggling description
P56
23. Revised fast program time and byte program time
P6
24. Added WRSCUR and WPSEL in WEL reset situation
P11
25. Modified Recovery Time from Read
P48,66
DEC/24/2009
0.02
1. Modified "QE bit" description
2. Modified four I/O and QPI mode description
3. Modifed Release read Enable description
4. Changed title from "Advanced Information" to "Preliminary"
5. Added MX25U8035E and MX25U8035E function
P25
P11,20
P19,28
P6
All
0.03
1. Revised tCE
2. Deleted tREHZ
P50,71
P50
JAN/27/2009
1.0
1. Removed "Preliminary"
2. Low Power Consumption: modified current description
3. Table 10. AC CHARACTERISTICS: modified Min. tSLCH/tCHSH
4. Modified Figure 40
5. Added Figure 41
6. Modified General Description
7. Modified Fast Erase Time
8. Modified Page Program Cycle Time from 0.9ms to 1.2ms
9. Modified "Read DMC mode (RDDMC)" description
10. Changed the naming "CFI mode" as "DMC mode"
11. Added dummy description
12. Modified figure 38
P6
P6,49
P50
P70
P71
P8
P6
P6,50
P42
P18,22,42
P22
P68
APR/01/2010
P/N: PM1472
85
REV. 1.9, NOV. 08, 2013
MX25U1635E
Revision No. Description
Page
1.1
1. Removed DMC sequence description & content table
P18,22,42
1.2
1. Remove "Advanced Information" in the package information and P7,74
part number section
2. Added NC/SIO3 description
P7,10
3. Added RDSCUR & WRSCUR waveforms
P65,66
4. Modified WRSCUR description
P38
1.3
1. Removed MX25U8035E
1.4
1. Removed the QPI support in RES command
P21,34,63
2. Modified tCH/tCL(4PP and Normal Read) from 15ns to 4.5ns
P50
3. Modified Write Protection Selection (WPSEL) description
P38,39
4. Modified tSLCH, tCHSL & tCHDX
P50
5. Modified CIN/COUT (max.) from 6pF/8pF to 10pF/25pF
P47
6. Revised Ordering Information table
P75
1.5
1. Added Read SFDP (RDSFDP) Mode
P7,17,20,
P46~55,60
1.6
1. Modified Program/Erase Suspend/Resume latency
P43~44,80
2. Modified content and descriptions
P18,23~25,33
P43~44,64,76
1.7
1. Modified tCLQX value in AC Characteristics Table
P60
1.8
1. Modified Data Retention value
P6,78
2. Modified tCH, tCL and its value in AC Characteristics Table
P54
3. Modified Features Page to sync with AC Characteristics Table
P6
4. Correct Symbol in Reset Sequence (QPI mode) Figure
P73
5. Removed MX25U3235E
All
1.9
1. Updated parameters for DC/AC Characteristics
P6,53,54
2. Updated Erase and Programming Performance
P6,78
3. Modified VCC to Ground Potential
P51
P/N: PM1472
86
Date
JUL/06/2010
SEP/16/2010
NOV/26/2010
SEP/29/2011
FEB/10/2012
NOV/07/2012
DEC/12/2012
MAY/03/2013
NOV/08/2013
REV. 1.9, NOV. 08, 2013
MX25U1635E
Except for customized products which have been expressly identified in the applicable agreement, Macronix's
products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or
household applications only, and not for use in any applications which may, directly or indirectly, cause death,
personal injury, or severe property damages. In the event Macronix products are used in contradicted to their
target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its
actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or
distributors shall be released from any and all liability arisen therefrom.
Copyright© Macronix International Co., Ltd. 2009~2013. All rights reserved, including the trademarks and
tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit,
NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC,
Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au­dio, Rich Book, Rich TV, and FitCAM. The names
and brands of third party referred thereto (if any) are for identification purposes only.
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
87