DG9232E, DG9233E, DG9234E www.vishay.com Vishay Siliconix 1 pC Charge Injection, 100 pA Leakage, +5 V / +3 V, Dual SPST Analog Switches DESCRIPTION FEATURES The DG9232E, DG9233E, and DG9234E are monolithic CMOS switches designed for precision signal switching. The 17 low voltage parts feature low charge injection, leakage, parasitic capacitance, and fast switching. • 1 pC charge injection The DG9232E, DG9233E, and DG9234E can switch both analog and digital signals. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. • Guaranteed 100 pA maximum switch on leakage at 25 °C • 3.8 pF switch off and 7.8 pF switch on capacitances • Low on-resistance - RDS(on): 17 / typ. at 5 V • tON: 32 ns, tOFF: 10 ns switching time The DG9232E, DG9233E, and DG9234E offer 1 nW typical power consumption and 8 kV ESD/HBM, 1 kV ESD/CDM tolerance. They are the ideal switches for use in low voltage instruments and healthcare devices, fitting the circuits of low voltage ADC and DAC, sample and hold, analog front end gain control, and signal path control. The DG9232E, DG9233E, and DG9234E are available in 8-lead MSOP and SOIC packages. • Available in MSOP-8 and SOIC-8 • Low charge injection and leakage • Low parasitic capacitance • Fast switching speed • High ESD tolerance Available • +2.7 V to +5 V single supply operation The DG9232E, DG9233E, and DG9234E contain two independent single pole single throw (SPST) switches. Switch-1 and switch-2 are normally closed for the DG9232E and normally open for the DG9233E. For the DG9234E, switch-1 is normally open and switch-2 is normally closed with a break-before-make switching timing. BENEFITS Available • Typical power consumption: 1 nW • Over voltage tolerant TTL / CMOS compatible • ESD (HBM): 8000 V, ESD (CDM): 1000 V • Latch-up current: > 300 mA (JESD78) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. APPLICATIONS • Automatic test equipment • Process control and automation • Data acquisition systems • Meters and instruments • Medical and healthcare systems • Communication systems • Sample-and-hold systems • Relay replacements • Battery powered systems S16-1451-Rev. A, 25-Jul-16 Document Number: 75165 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9232E, DG9233E, DG9234E www.vishay.com Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION NC1 1 8 V+ COM1 2 7 IN1 IN2 3 6 COM2 GND 4 5 NC2 TRUTH TABLE - DG9232E LOGIC SWITCH 0 On 1 Off Logic “0” 0.8 V Logic “1” 2.4 V Top view TRUTH TABLE - DG9233E NO1 1 8 V+ LOGIC SWITCH COM1 2 7 IN1 0 Off IN2 3 6 COM2 1 On GND 4 5 NO2 Logic “0” 0.8 V Logic “1” 2.4 V Top view NO1 1 8 V+ COM1 2 7 IN1 IN2 3 6 COM2 GND 4 5 NC2 TRUTH TABLE - DG9234E LOGIC SWITCH-1 0 Off SWITCH-2 On 1 On Off Logic “0” 0.8 V Logic “1” 2.4 V Top view ORDERING INFORMATION TEMPERATURE RANGE CONFIGURATION DG9232E -40 °C to +85 °C lead (Pb)-free DG9233E DG9234E PACKAGE PART NUMBER MINIMUM ORDER / PACKAGE QUANTITY 8-pin MSOP 8-pin SOIC 8-pin SOIC 8-pin MSOP 8-pin SOIC 8-pin SOIC 8-pin MSOP 8-pin SOIC 8-pin SOIC DG9232EDQ-T1-GE3 DG9232EDY-T1-GE3 DG9232EDY-GE3 DG9233EDQ-T1-GE3 DG9233EDY-T1-GE3 DG9233EDY-GE3 DG9234EDQ-T1-GE3 DG9234EDY-T1-GE3 DG9234EDY-GE3 Tape and reel 2500 units Tape and reel 2500 units Tube 500 units Tape and reel 2500 units Tape and reel 2500 units Tube 500 units Tape and reel 2500 units Tape and reel 2500 units Tube 500 units ABSOLUTE MAXIMUM RATINGS PARAMETER Reference V+ to GND IN, COM, NC, NO a Continuous current (any terminal) Peak current (pulsed at 1 ms, 10 % duty cycle) ESD (HBM) (MIL-STD-883, method 3015) ESD (CDM) (ANSI / ESDA / JEDEC® JS-002) Latch up current, per JESD78 Storage temperature Power dissipation (packages) b LIMIT D suffix 8-pin narrow body SOIC c -0.3 to +6 -0.3 to (V+ + 0.3) ± 20 ± 40 > 8000 > 1000 300 -65 to +125 400 UNIT V mA V V mA °C mW Notes a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6.5 mW/°C above 70 °C. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1451-Rev. A, 25-Jul-16 Document Number: 75165 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9232E, DG9233E, DG9234E www.vishay.com Vishay Siliconix SPECIFICATIONS (V+ = 3 V) PARAMETER SYMBOL TEST CONDITIONS OTHERWISE UNLESS SPECIFIED V+ = 3 V, ± 10 %, VIN = 0.8 V or 2.4 V e D SUFFIX -40 °C to +85 °C TEMP. a MIN. c UNIT TYP. b MAX. c Analog Switch Analog signal range d VANALOG Full 0 - 3 - 35 50 RDS(on) VNO or VNC = 1.5 V, V+ = 2.7 V ICOM = 5 mA Room Full - 35 65 RDS(on) match d RDS(on) VNO or VNC = 1.5 V Room - 0.4 2 RDS(on) flatness d RDS(on) flatness VNO or VNC = 1 V and 2 V Room - 4 8 NO or NC off leakage current g INO/NC(off) VNO or VNC = 1 V/2 V, VCOM = 2 V/1 V Room -100 5 100 Full -5000 5 5000 COM off leakage current g ICOM(off) VCOM = 1 V/2 V, VNO or VNC = 2 V/1 V Channel-on leakage current g ICOM(on) VCOM = VNO or VNC = 1 V/2 V Drain-source on-resistance Room -100 5 100 Full -5000 5 5000 Room -200 5 200 Full -10 000 5 10 000 Full - 0.001 - Room - 43 120 Full - - 200 Room - 16 50 Full - - 120 Room - -0.28 - V pA Digital Control Input current IINL or IINH μA Dynamic Characteristics Turn-on time tON VNO or VNC = 1.5 V Turn-off time tOFF Charge injection d QINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 Off-isolation OIRR Crosstalk XTALK RL = 50 , CL = 5 pF, f = 1 MHz NC and NO capacitance CS(off) Channel-on capacitance CCOM(on) COM-off capacitance CCOM(off) f = 1 MHz Room - -80 - Room - -108 - ns pC dB Room - 4 - Room - 8 - Room - 4 - 2.7 - 5.5 V 0.0003 - 1 μA pF Power Supply Positive supply range V+ Power supply current I+ V+ = 3.3 V, VIN = 0 V or 3.3 V Notes a. Room = 25 °C, full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min. and max. values. g. Guaranteed by 5 V leakage tests, not production tested. S16-1451-Rev. A, 25-Jul-16 Document Number: 75165 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9232E, DG9233E, DG9234E www.vishay.com Vishay Siliconix SPECIFICATIONS (V+ = 5 V) PARAMETER SYMBOL TEST CONDITIONS OTHERWISE UNLESS SPECIFIED V+ = 5 V, ± 10 %, VIN = 0.8 V or 2.4 V e D SUFFIX -40 °C to +85°C TEMP. a MIN. c UNIT TYP. b MAX. c Analog Switch Analog signal range d VANALOG Full 0 - 5 RDS(on) VNO or VNC = 3.5 V, V+ = 4.5 V ICOM = 5 mA Room - 17 25 Full - 17 35 RDS(on) match d RDS(on) VNO or VNC = 3.5 V Room - 0.4 2 RDS(on) flatness d RDS(on) flatness VNO or VNC = 1 V, 2 V, and 3 V Room - 3.5 6 NO or NC off leakage current g INO/NC(off) VNO or VNC = 1 V/4 V, VCOM = 4 V/1 V COM off leakage current ICOM(off) VCOM = 1 V/4 V, VNO or VNC = 4 V/1 V Channel-on leakage current ICOM(on) VCOM = VNO or VNC = 1 V/4 V Drain-source on-resistance Room -100 10 100 Full -5000 10 5000 Room -100 10 100 Full -5000 10 5000 Room -200 - 200 Full -10 000 - 10 000 Full - 0.001 - Room - 32 75 V pA Digital Control Input current IINL or IINH μA Dynamic Characteristics Turn-on time tON VNO or VNC = 3 V Turn-off time tOFF Charge injection d QINJ Off-isolation OIRR Crosstalk XTALK NC and NO capacitance C(off) Channel-on capacitance CD(on) COM-off capacitance CD(off) CL = 1 nF, VGEN = 0 V, RGEN = 0 RL = 50 , CL = 5 pF, f = 1 MHz f = 1 MHz Full - - 150 Room - 10 50 100 ns Full - - Room - -0.78 - Room - -80 - Room - -108 - Room - 3.8 - Room - 7.8 - Room - 3.8 - 2.7 - 5.5 V - - 1 μA pC dB pF Power Supply Positive supply range V+ Power supply current I+ V+ = 5.5 V, VIN = 0 V or 5.5 V Notes a. Room = 25 °C, full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min. and max. values. S16-1451-Rev. A, 25-Jul-16 Document Number: 75165 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9232E, DG9233E, DG9234E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 35 100 10 V+ = 5 V 5 0 10 1 2 3 4 25 20 -40 °C 15 10 5 10 0 0.5 VCOM - Analog Voltage (V) 2nd line 1 10 100 -40 °C 2nd line Leakage Current (pA) 1st line 2nd line 2nd line RON - On-Resistance (Ω) 1000 15 10 1 INO/NC(OFF) 0 1000 -50 ICOM(OFF) -100 100 -150 2 3 4 5 3 4 Leakage Current vs. Analog Voltage 35 -100 100 ICOM(ON), VCOM = 1 V ICOM(OFF), VCOM = 1 V, VNO/NC = 4 V 0 20 40 60 10 80 Temperature (°C) 2nd line Leakage Current vs. Temperature S16-1451-Rev. A, 25-Jul-16 30 25 20 15 V+ = 5 V 10 5 0 -5 INO/NC(OFF), VCOM = 4 V, VNO/NC = 1 V -20 2nd line I+ - Supply Current (A) 1st line 2nd line -50 -150 5 40 10000 V+ = 5 V 0 -40 2 On-Resistance vs. Analog Voltage 1000 -250 1 VCOM - Analog Voltage (V) 2nd line INO/NC(OFF), VCOM = 1 V, VNO/NC = 4 V -200 10 0 VCOM - Analog Voltage (V) 2nd line ICOM(ON), VCOM = 4 V ICOM(OFF), VCOM = 4 V, VNO/NC = 1 V 100 V+ = 5 V -250 Axis Title 150 2nd line Leakage Current (pA) ICOM(ON) -200 0 50 10000 50 20 0 3 100 +85 °C 5 2.5 Axis Title 10000 V+ = 5 V INO/NC = 5 mA +25 °C 2 On-Resistance vs. Analog Voltage Axis Title 25 1.5 VCOM - Analog Voltage (V) 2nd line On-Resistance vs. Analog Voltage 30 100 +25 °C 1st line 2nd line 0 1000 30 1st line 2nd line 15 2nd line RON - On-Resistance (Ω) 1000 V+ = 3 V 1st line 2nd line 2nd line RON - On-Resistance (Ω) 35 25 20 V+ = 3 V INO/NC = 5 mA +85 °C TA = 25 °C INO/NC = 5 mA 30 10000 40 100 V+ = 3 V -10 0 1 2 3 4 VIN - Input Voltage (V) 2nd line 5 Supply Current vs. Input Voltage Document Number: 75165 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9232E, DG9233E, DG9234E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 1000 30 V+= 3 V, tOFF 20 100 10 V+ = 5 V, tOFF 0 10 -40 -20 0 20 40 60 80 60 1000 50 tON 40 30 100 20 tOFF 10 0 10 2 100 2.5 3 4 4.5 V+ - Supply Voltage (V) 2nd line Switching Time vs. Temperature Switching Time vs. Supply Voltage Axis Title Axis Title VIL = 25 °C 100 VIL = 85 °C 0.8 -30 1000 -40 1st line 2nd line 1st line 2nd line 1.4 2nd line OIRR, Off Isolation (dB) 1000 1.6 1.0 V+ = 5 V -20 VIH = 25 °C 1.2 10000 -10 VIH = -40 °C 1.8 5 0 10000 2.0 -50 -60 -70 100 -80 -90 -100 0.6 -110 100K 10 2 2.5 3 3.5 4 4.5 5 10 1M 10M 100M V+ - Supply Voltage (V) 2nd line Frequency (Hz) 2nd line Switching Threshold vs. Supply Voltage OIRR, Off Isolation vs. Frequency Axis Title Axis Title 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 1G 10 10000 10000 V+ = 5 V 9 CCOM(ON) V+ = 3 V 1st line 2nd line 1000 100 V+ = 5 V 2nd line Capacitance (pF) 8 7 1000 6 5 1st line 2nd line 2nd line VT - Switching Threshold (V) 3.5 Temperature (°C) 2nd line 2.2 2nd line QINJ - Charge Injection (pC) 1st line 2nd line V+ = 5 V, tON 40 2nd line tON, tOFF - Switching Time (ns) 50 10000 70 V+= 3 V, tON 1st line 2nd line 2nd line tON, tOFF - Switching Time (ns) 80 10000 60 CCOM(OFF) 4 100 CNO/NC(OFF) 3 2 1 10 0 1 2 3 4 5 0 10 0 1 2 3 VNO/NC - Analog Voltage (V) 2nd line VANALOG (V) 2nd line Charge Injection vs. Analog Voltage Capacitance S16-1451-Rev. A, 25-Jul-16 4 5 Document Number: 75165 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9232E, DG9233E, DG9234E www.vishay.com Vishay Siliconix TEST CIRCUITS V+ 3V Logic input 50 % V+ 0V NO or NC Switch tr < 20 ns tf < 20 ns Switch output COM V OUT 0.9 x VOUT Input Switch output IN Logic RL 300 GND CL 35 pF 0V tON Input tOFF 0V Logic "1" = switch on Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) RL V OUT = V COM R L + R ON Fig. 1 - Switching Time V+ Logic input V+ V1 NO or NC COM1 NO or NC COM2 V2 tr < 5 ns tf < 5 ns 3V 0V RL 300 CL 35 pF GND VNC = V NO VO Switch output 90 % 0V tD tD CL (includes fixture and stray capacitance) Fig. 2 - Break-Before-Make Interval V+ Rgen V OUT V+ NC or NO COM VOUT VOUT + IN Vgen CL 3V IN On Off On GND Q = VOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Fig. 3 - Charge Injection S16-1451-Rev. A, 25-Jul-16 Document Number: 75165 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9232E, DG9233E, DG9234E www.vishay.com Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM IN COM 0 V, 2.4 V NC or NO V NC NO Off Isolation = 20 log RL V COM GND Analyzer Fig. 4 - Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A impedance analyzer or equivalent f = 1 MHz Fig. 5 - Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75165. S16-1451-Rev. A, 25-Jul-16 Document Number: 75165 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Package Information Vishay Siliconix MSOP: 8−LEADS JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating e A See Detail “B” c1 0.10 C -H- A1 D 6 Seating Plane c Section “C-C” Scale: 100/1 (See Note 8) Base Metal -A- 3 See Detail “A” Side View 0.25 BSC C Parting Line 0.07 R. Min 2 Places Seating Plane ς A2 0.05 S C E1 -B- L 4 T -C- 3 0.95 End View Detail “A” (Scale: 30/1) N = 8L NOTES: 1. Die thickness allowable is 0.203"0.0127. 2. Dimensioning and tolerances per ANSI.Y14.5M-1994. 3. Dimensions “D” and “E1” do not include mold flash or protrusions, and are measured at Datum plane -H- , mold flash or protrusions shall not exceed 0.15 mm per side. 4. Dimension is the length of terminal for soldering to a substrate. 5. Terminal positions are shown for reference only. 6. Formed leads shall be planar with respect to one another within 0.10 mm at seating plane. 7. The lead width dimension does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the lead width dimension at maximum material condition. Dambar cannot be located on the lower radius or the lead foot. Minimum space between protrusions and an adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”. 8. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip. 9. Controlling dimension: millimeters. 10. This part is compliant with JEDEC registration MO-187, variation AA and BA. 11. Datums -A- and -B- to be determined Datum plane -H- . MILLIMETERS Dim Min Nom Max A A1 A2 b b1 c c1 D E E1 e e1 L N T - - 1.10 0.05 0.10 0.15 0.75 0.85 0.95 0.25 - 0.38 8 0.25 0.30 0.33 8 0.13 - 0.23 0.15 0.18 0.13 3.00 BSC Note 3 4.90 BSC 2.90 3.00 3.10 3 0.70 4 0.65 BSC 1.95 BSC 0.40 0.55 8 0_ 4_ 5 6_ ECN: T-02080—Rev. C, 15-Jul-02 DWG: 5867 12. Exposed pad area in bottom side is the same as teh leadframe pad size. Document Number: 71244 12-Jul-02 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000