Digitron MCR65-7 Silicon controlled rectifier Datasheet

DIGITRON SEMICONDUCTORS
MCR65 SERIES
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Peak repetitive forward and reverse voltage
(TJ = 25 to +125°C, gate open)
MCR65-1
MCR65-2
MCR65-3
MCR65-4
MCR65-5
MCR65-6
MCR65-7
MCR65-8
MCR65-9
MCR65-10
Value
Unit
(1)
VRRM, VDRM
Non-repetitive peak reverse blocking voltage
(t ≤ 5ms)(1)
MCR65-1
MCR65-2
MCR65-3
MCR65-4
MCR65-5
MCR65-6
MCR65-7
MCR65-8
MCR65-9
MCR65-10
VRSM
Forward current RMS
IT(RMS)
Peak surge current
(one cycle, 60Hz, TC = -40 to +125°C)
ITSM
Circuit fusing considerations
(t = 8.3ms)
I2t
Peak gate power
25
50
100
200
300
400
500
600
700
800
Volts
35
75
150
300
400
500
600
700
800
900
Volts
55
Amps
Amps
550
A2 s
1255
PGM
20
Watts
PG(AV)
0.5
Watts
Peak forward gate current
IGM
2
Amps
Forward peak gate voltage
Reverse peak gate voltage
VGFM
VGRM
10
Volts
TJ
-40 to +125
°C
Tstg
-40 to +150
°C
30
In. lb.
Average gate power (Pulse width ≤ 2µs)
Operating junction temperature range
Storage temperature range
Mounting torque
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a
positive bias applied to the gate concurrently with a negative potential on the anode.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Isolated stud
144 Market Street
Kenilworth NJ 07033 USA
Symbol
RӨJC
phone +1.908.245-7200
fax +1.908.245-0555
Maximum
1.1
Unit
°C/W
[email protected]
www.digitroncorp.com
Rev. 20130128
DIGITRON SEMICONDUCTORS
MCR65 SERIES
SILICON CONTROLLED RECTIFIER
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TC = 25°C
TC = 125°C
IDRM, IRRM
Forward “on” voltage
(ITM = 175A peak)
VTM
Gate trigger current (continuous dc)
(VD = 12V, RL = 50Ω)
TC = 25°C
TC = -40°C
IGT
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 50Ω)
TC = 25°C
TC = -40°C
(VD = Rated VDRM, RL = 1000Ω, TJ = 125°C)
VGT
Holding current
(VD = 12V, RL = 50Ω, gate open)
IH
Forward voltage application rate
(VD = rated VDRM, TJ = 125°C)
dv/dt
Min.
Max.
Unit
-
10
2
µA
mA
-
2
-
40
75
0.2
3
3.5
-
-
60
50
-
Volts
mA
Volts
mA
V/µs
MECHANICAL CHARACTERISTICS
Case
TO-48 ISO
Marking
Body painted, alpha-numeric
Polarity
Cathode is stud
TO-48 ISO
A
B
C
F
H
J
K
L
Q
T
144 Market Street
Kenilworth NJ 07033 USA
Inches
Min
Max
0.551
0.559
0.501
0.505
1.280
0.160
0.265
0.420
0.455
0.300
0.350
0.255
0.275
0.055
0.085
0.135
0.150
phone +1.908.245-7200
fax +1.908.245-0555
Millimeters
Min
Max
14.000
14.200
12.730
12.830
32.510
4.060
6.730
10.670
11.560
7.620
8.890
6.480
6.990
1.400
2.160
3.430
3.810
[email protected]
www.digitroncorp.com
Rev. 20130128
DIGITRON SEMICONDUCTORS
MCR65 SERIES
144 Market Street
Kenilworth NJ 07033 USA
SILICON CONTROLLED RECTIFIER
phone +1.908.245-7200
fax +1.908.245-0555
[email protected]
www.digitroncorp.com
Rev. 20130128
Similar pages