JIEJIE MICROELECTRONICS CO. , Ltd JCT655/855 Series 55A SCRs Rev.3.0 DESCRIPTION: JCT655/855 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. 1 2 3 1 TO-247 1 2 3 JCTx55Z provides insulation voltage rated at 2500V RMS from all three terminals to external heatsink 2 3 TO-247S TO-3P Insulated A(2) complying with UL standards (File ref: E252906). K(1) G(3) MAIN FEATURES Symbol JCT655 JCT855 VDRM/ VRRM 600V 800V IT(RMS) 55A IGT 10 - 50 mA ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40-150 ℃ Tj -40-125 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM 600/800 V Repetitive peak reverse voltage(Tj=25℃) VRRM 600/800 V Non repetitive surge peak Off-state voltage VDSM VDRM +100 V Non repetitive peak reverse voltage VRSM VRRM +100 V IT(RMS) 55 A ITSM 520 A I2t 1350 A2s Storage junction temperature range Operating junction temperature range TO-3P(Ins) (TC=80℃) RMS on-state current TO-247S /TO-247 (TC=83℃) Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms) TEL：+86-513-83639777 - 1 / 5- http://www.jjwdz.com JCT655/855 Series JieJie Microelectronics CO. , Ltd Critical rate of rise of on-state current (IG=2×IGT) Peak gate current Average gate power dissipation Peak gate power dI/dt 150 A/μs IGM 5 A PG(AV) 1 W PGM 10 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Value Symbol IGT VGT VGD Test Condition Unit VD=12V RL=33Ω VD=VDRM Tj=125℃ RL=3.3KΩ MIN. TYP. MAX. 10 15 50 mA - - 1.5 V 0.2 - - V IL IG=1.2IGT - - 100 mA IH IT=500mA - - 80 mA 700 - - V/μs Value(MAX) Unit Tj=25℃ 1.6 V Tj=25℃ 10 μA Tj=125℃ 6 mA Value Unit dV/dt VD=2/3VDRM Gate Open Tj=125℃ STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Parameter ITM=80A tp=380μs VD=VDRM VR=VRRM THERMAL RESISTANCES Symbol Rth(j-c) Parameter TO-3P(Ins) 0.65 TO-247S /TO-247 0.6 junction to case(AC) TEL：+86-513-83639777 - 2 / 5- ℃/W http://www.jjwdz.com JCT655/855 Series JieJie Microelectronics CO. , Ltd ORDERING INFORMATION J CT 6 55 Z Z:TO-3P(Ins) CS:TO-247S S:TO-247 JieJie Microelectronics Co.,Ltd IT(RMS):55A SCRs 6:VDRM /VRRM ≥600V 8:VDRM /VRRM ≥800V PACKAGE MECHANICAL DATA 2- .5 R0 Dimensions Ref. m 2m H a M A B P F E C L K J Typ. Min. A G R Φ . x4 Millimeters D 4.40 Max. Min. 4.60 0.173 Typ. Max. 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.50 0.70 0.020 0.028 E 2.70 2.90 0.106 0.114 F 15.80 16.50 0.622 0.650 G 20.40 21.10 0.803 0.831 H 15.10 15.50 0.594 0.610 J 5.40 5.65 0.213 0.222 K 1.10 1.40 0.043 0.055 L 1.35 1.50 0.053 0.059 P 2.80 3.00 0.110 4.35 R TO-3P Ins Inches 0.118 0.171 Dimensions Ref. A D B P J K G C F L TO-247S TEL：+86-513-83639777 Typ. Inches Typ. Max. Min. A 15.1 16.1 0.594 0.634 B 19.8 20.8 0.78 0.819 C 13.8 14.8 0.543 0.583 D 3.00 4.00 0.118 0.157 E 2.75 3.35 0.108 0.132 F 1.30 1.50 0.051 0.059 G 5.10 5.80 0.201 0.228 H 4.50 5.50 0.177 0.217 J 1.45 2.15 0.057 0.085 K 1.90 2.80 0.075 0.110 L 0.55 0.80 0.022 0.031 P 2.00 2.40 0.079 0.094 Min. H E Millimeters - 3 / 5- Max. http://www.jjwdz.com JCT655/855 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 66 P(w) 80 α=180° TO-247/ TO-247S 55 60 44 40 TO-3P(Ins) 33 22 20 11 0 0 IT(RMS) (A) 22 33 11 44 0 0 55 FIG.3: Surge peak on-state current versus number of cycles Tc (℃) 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) 600 ITSM (A) 560 tp=10ms One cycle 480 Tj=125℃ 100 400 320 240 10 160 Tj=25℃ 80 0 1 10 Number of cycles 100 1000 1 0 1 2 VTM (V) 3 4 5 2 TEL：+86-513-83639777 - 4 / 5- http://www.jjwdz.com JCT655/855 Series JieJie Microelectronics CO. , Ltd FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t (dI/dt < 150A/μs) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature 2 2 2 ITSM (A), I t (A s) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 3.0 5000 2.5 ITSM 1000 I2 t 2.0 1.5 dI/dt 100 IGT IH&IL 1.0 0.5 10 0.01 tp(ms) 0.1 1 10 0.0 -40 Tj(℃) -20 0 20 40 60 80 100 120 140 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the third version which is made in 6-June-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TEL：+86-513-83639777 - 5 / 5- http://www.jjwdz.com