isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK444-200A DESCRIPTION ·5.3A, 200V • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • Majority Carrier Device • Related Literature APPLICATIONS ·use in Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±30 V Drain Current-continuous@ TC=37℃ 5.3 A Total Dissipation@TC=25℃ 25 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range 150 ℃ ID Ptot Tj Tstg THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 55 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUK444-200A ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 200 VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.1 RDS(ON) Drain-Source On-stage Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 3.5A 0.4 Ω Gate Source Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 10 uA VSD Diode Forward Voltage IF= 5.3A; VGS= 0 1.3 V isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn