RICMOS™ SOI GATE ARRAYS HX2000 HX2000r FEATURES FAMILY • Fabricated on Honeywell’s Radiation Hardened – 0.65 µmLeff RICMOS™ IV SOI Process, HX2000 – 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r • Array Sizes from 40K to 390K Available Gates (Raw) • HX2000 Supports 5V Core Operation • HX2000r Supports 3.3V Core Operation • Total Dose Hardness ≥1x106 rad(SiO2) • Dose Rate Upset Hardness: ≥1x1010 rad(Si)/sec, HX2000* ≥1x109 rad(Si)/sec, HX2000r* Option Available for: ≥1x1011 rad(Si)/sec, HX2000* ≥1x1010 rad(Si)/sec, HX2000r* • HX2000r Supports Mixed Voltage I/O Buffers • Dose Rate Survivability ≥1x1012 rad(Si)/sec* • TTL (5V) or CMOS (5V/3.3V) Compatible I/O • Soft Error Rate ≤1x10-11 Errors/Bit/Day, HX2000 ≤1x10-10 Errors/Bit/Day, HX2000r • Configurable Multi-Port Gate Array SRAM • Single or Dual Port Custom SRAM Drop-In Capability • Neutron Fluence Hardness to 1x1014/cm2 • Supports Chip Level Power Down for Cold Sparing • No Latchup • Supports System Speeds Beyond 100 MHz *Projected GENERAL DESCRIPTION The HX2000 and HX2000r gate arrays are performance oriented sea-of-transistor arrays, fabricated on Honeywell’s RICMOS™ IV Silicon On Insulator (SOI) process. The HX2000 arrays are for 5V designs only. The HX2000r arrays support 5V and 3.3V operation. High density is achieved with the standard 3-layer metal or optional 4-layer metal process, providing up to 290,000 usable gates. The high density and performance characteristics of the RICMOS (Radiation Insensitive CMOS) SOI process make possible device operation beyond 100 MHz over the full military temperature range, even after exposure to ionizing radiation exceeding 1x106 rad(SiO2). FlipFlops have been designed for a Soft Error Rate (SER) of less than 1x10-11 errors/bit/day in the Adams 90% worst case environment. Each HX2000/HX2000r design is founded on our proven RICMOS ASIC library of SSI and MSI logic elements, configurable RAM cells, and selectable I/O pads. The gate arrays feature a global clock network capable of handling multiple clock signals with low clock skew between registers. This family is fully compatible with Honeywell’s high reliability screening procedures and consistent with QML Class Q and V requirements. Designers can choose from a wide variety of I/O types. Output buffer options include 8 drive strengths, CMOS/TTL levels, IEEE 1149.1 boundary scan, pull-up/pull-down resistors, and three-state capability. Input buffers can be selected for CMOS/TTL/Schmitt trigger levels, IEEE 1149.1 boundary scan and pull-up/pull-down resistors. Bi-directional buffers are also available. An important feature of HX2000r is the dual voltage I/O capability in which the designer has complete flexibility in terms of placement of I/O buffers. This feature allows adjacent I/O buffers with different supply voltages. The HX2000/HX2000r families provide options for configurable multi-port SRAMs. Word widths can be selected in single bit increments. A variety of SRAM read and write port options are available to serve most applications. Custom drop-in macrocells can also be implemented to further increase chip density. Word widths can be selected in two bit increments. Single port and two port options are available. The HX2000/HX2000r families have a special feature to allow a chip level power down mode, in which the associated buses connected to the chip can remain active. This Solid State Electronics Center • 12001 State Highway 55, Plymouth, 1 MN 55441 • (800) 323-8295 • http://www.ssec.honeywell.com HX2000/HX2000r HX2000 Characteristics HX2040* HX2080 HX2160 HX2300 HX2400 40K 85K 160K 295K 390K 27K 36K 53K 71K 91K 132K 156K 226K 200K 290K Maximum Die I/O 132 176 240 336 372 Maximum Package I/O (2) TBD 176 240 320 320 Total Core Gate Count U s a b l e G a t e Count 3-Layer Metal 4-Layer Metal (1) Typical Delay—2 Input NAND 270 ps at 5.0V, 290 ps at 3.3V Selectable I/O Driver, Receiver, Bi-Directional, Three-State I/O Interface Levels CMOS, TTL, Schmitt Trigger Typical Power Dissipation, µW/Gate/MHz 0.6 @ 5.0V, 0.22 @ 3.3V Operating Voltage 5.0V ± 10% 3.3V ± 10% (Core & I/O) and/or 5.0V ± 10% (I/O) HX2000 HX2000r Operating Temperature -55° C to 125° C Process Technology RICMOS™ IV SOI Minimum Geometry (1) Projected (2) Design and package dependent. HX2000 HX2000r 0.65 µm Leff / 0.8 µm Drawn (5V) 0.55 µm Leff / 0.7 µm Drawn (3.3V) * Planned Array high impedance off-state buffer feature allows users to power down portions of their system for power savings or for cold sparing. Honeywell can perform design translations to the HX2000 arrays from other CAD platforms. Our synthesis capabilities allow customers to use familiar CAD tools and libraries to map existing designs to Honeywell library components. Logic designers need not have prior experience in radiation hardening. Honeywell’s VDS™ Toolkit and RICMOS IV SOI libraries provide the necessary guidance to achieve first pass design success. The VDS Toolkit supports industry standard platforms including those offered by Mentor Graphics and Synopsys. The HX2000 family of gate arrays is the right choice for your high reliability applications demanding high density and radiation performance. To learn more about Honeywell’s variety of space components, call us at 612-954-2888. To learn more about Honeywell Solid State Electronics Center, visit our web site at http://www.ssec.honeywell.com Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. Helping You Control Your World 900144 Rev.A 2/97 2