AMMC-5025 30KHz – 80 GHz TWA Data Sheet Description Features The AMMC-5025 MMIC is a 30KHz to 80GHz ultra broadband traveling wave amplifier. In this operational frequency band, AMMC-5025 provides 8dB gain with better than 10dB input and output return losses. This performance is suitable for instrumentation and high speed digital communications. x 50 : match on input and output Component Image x ESD protection, 70V MM and 300V HBM Typical Performance (Vd=5V, Idsq=0.1A) x Frequency range 30KHz to 80 GHz x Small signal Gain: 8dB x P-1dB: 15 dBm @ 40 GHz x Input/Output return loss of -10dB/-10dB Applications x Microwave Radio systems x Satellite VSAT, Up/Down Link x Optical fiber laser driver Chip Size: 1600 x 950 Pm (63 x 37 mils) Chip Size Tolerance: ± 10 Pm (±0.4 mils) Chip Thickness: 100 ± 10 Pm (4 ± 0.4 mils) Pad Dimensions: 75 x 75 Pm (3 x 3 ± 0.4 mils) Note: 1. This MMIC uses depletion mode pHEMT devices. Negative supply is used for DC gate biasing. Attention: Observe Precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A): 70V ESD Human Body Model (Class 1A): 300V Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. Absolute Maximum Ratings[1,2,3, and 4] Symbol Parameters Vd Positive Supply Voltage[2] Unit Max V 7 Vg1 Gate Supply Voltage V -3.6 to 0 Vg2 Gate Supply Voltage V -2.5 to +2.5 PD Power Dissipation[2] W 0.8 Pin CW Input Power dBm 23 Tch Operating Channel Temp. °C +150 Tstg Storage Case Temp. °C -65 to +155 Tmax Maximum Assembly Temp (30 sec max) °C +320 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. Combinations of supply voltage and drain current shall not exceed PD. 3. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. DC Specifications/ Physical Properties [5] Symbol Parameters and Test Conditions Unit Min Typ Vd Drain Supply Voltage V 5 Id(q) Drain Supply Current (Vd=5 V, Vg set for Id(q)Typical) mA 100 Vg1 Gate Supply Operating Voltage (Id(q) = 100 mA) V -3.6 -2.0 -1.2 -2.5 +1.2 +2.5 Vg2 Gain control voltage. Open on the Vg2 makes highest gain. V RTjc Thermal Resistance[5] (Channel-to-Backside) °C/W 12.8 Tch Channel Temperature @85°C Backside °C 91.4 Max RF Specifications [1,2] TA= 25°C, Vdd = 5 V, Idq =0.1 A, Zo=50 : Symbol Parameters and Test Conditions Units Minimum Freq Operational Frequency GHz 30KHz Gain Small-signal Gain Freq = 2, 10, 20, 30, 40 GHz dB 7.5 8 P-1dB Output Power at 1dB Gain Compression Freq = 40GHz dBm 13 15 OIP3 Third Order Output Intercept Point@20GHz 'f = 10MHz, Po = +10dBm, SCL dBm 20 RLin Input Return Loss dB 10 RLout Output Return Loss dB 15 Isolation Reverse Isolation dB 27 Notes: 1. Small/Large -signal data measured from an on-wafer tester at TA = 25°C. 2. 100% on-wafer RF test of Gain, Return Losses and Reverse Isolation is done at frequencies: 2,10, 20, 30, and 40 GHz. 2 Typical Maximum 80 Typical Performance (Data obtained from on-wafer condition) (TA = 25°C, Vdd = 5V, Idq = 0.1A, Vg = -1.8 V, Zin = Zout = 50 :) 14 S11 (dB) S22 (dB) -10 -20 8 -30 6 -40 4 -50 2 -60 0 -5 Return Loss (dB) 10 S12 (dB) -15 -20 -70 0 20 40 60 Frequency (GHz) 80 0 100 Figure 1. Typical Gain and Reverse Isolation 80 100 0.2 Pout (dBm) PAE (%) Id (total) 20 Po (dBm), PAE (%) P-1 and P-3 (dBm) 40 60 Frequency (GHz) 25 P-1 P-3 18 16 14 12 15 0.1 10 5 0 0 10 20 30 40 50 Frequency (GHz) Figure 3. Typical Output Power vs. Frequency 3 20 Figure 2. Typical Return Loss (Input and Output) 20 10 -10 Ids (A) 12 S21 (dB) 0 0 S21 (dB) S12 (dB) 60 70 80 -5 -15 0 -10 -5 0 Pin (dBm) 5 10 15 Figure 4. Typical Output Power, PAE, and Total Drain Current versus Input Power at 50GHz Typical Bias Dependency (Data obtained from on-wafer condition) (TA = 25°C, Vdd = 5V, Zin = Zout = 50 :) 14 12 8 S22 (dB) Gain (dB) 10 6 4 Ids=120mA Ids=100mA Ids=80mA 2 0 0 20 40 60 Frequency (GHz) 80 100 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 20 40 60 Frequency (GHz) Figure 7. Typical S11 bias dependency at Vds=5V 4 20 40 60 Frequency (GHz) 80 100 Figure 6. Typical S22 bias dependency at Vds=5V Ids=120mA Ids=100mA Ids=80mA 0 Ids=120mA Ids=100mA Ids=80mA 0 Gain (dB) S11 (dB) Figure 5. Typical Gain bias dependency at Vds=5V 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 80 100 20 10 0 -10 -20 -30 -40 -50 -60 -70 -80 Vg2=2.5V Vg2=1.5V Vg2=0.5V Vg2=-0.5V Vg2=-1.5V 0 20 Vg2=2V Vg2=1V Vg2=0V Vg2=-1V Vg2=-2V 40 60 Frequency (GHz) Figure 8. Gain control using Vg2 voltage at Vds=5V 80 100 AMMC-5025 Performance Distributions Sample Size= 6,876 P1dB (Freq=20GHz) 16 S21 (Freq=20 GHz) 17 18 7.7 7.9 (dBm) -29 -27 -25 -23 (dB) 5 8.3 8.5 8.7 8.9 9.1 (dB) S11 (Freq=20 GHz) -31 8.1 S22 (Freq=20 GHz) -21 -19 -17 -17 -16 (dB) -15 Typical Scattering Parameters [1], (TA = 25°C, Vd =5 V, ID = 0.1 A, Zin = Zout = 50 :) Freq [GHz] S11 dB Mag Phase dB Mag Phase dB Mag Phase dB Mag Phase 1 -23.99 0.06 -73.62 12.31 4.12 145.45 -69.87 3.21E-04 -56.06 -14.28 0.19 -96.92 2 -18.65 0.12 -94.96 11.73 3.86 125.95 -62.19 7.77E-04 42.58 -17.44 0.13 -116.92 3 -15.45 0.17 -108.86 11.44 3.73 103.10 -60.07 9.92E-04 16.73 -17.83 0.13 -125.57 4 -13.42 0.21 -119.17 11.21 3.64 80.66 -59.29 1.09E-03 13.76 -17.20 0.14 -130.80 5 -12.03 0.25 -129.52 10.89 3.50 56.99 -56.48 1.50E-03 9.53 -16.28 0.15 -137.14 6 -11.11 0.28 -139.24 10.41 3.31 35.49 -58.61 1.17E-03 -9.71 -15.61 0.17 -145.25 7 -10.58 0.30 -148.77 9.69 3.05 14.16 -55.23 1.73E-03 -35.56 -14.78 0.18 -152.92 8 -10.23 0.31 -156.02 9.22 2.89 -6.61 -53.10 2.21E-03 -56.51 -14.69 0.18 -160.55 9 -10.00 0.32 -164.67 8.76 2.74 -28.44 -52.66 2.33E-03 -87.14 -14.65 0.19 -170.92 10 -9.98 0.32 -171.35 8.34 2.61 -48.35 -54.79 1.82E-03 -98.55 -15.23 0.17 178.16 11 -10.27 0.31 -177.66 8.34 2.61 -68.27 -50.71 2.91E-03 -101.79 -16.28 0.15 168.15 12 -10.64 0.29 176.54 8.16 2.56 -89.02 -53.25 2.17E-03 -116.45 -18.10 0.12 161.44 13 -11.41 0.27 171.28 8.29 2.60 -107.30 -51.39 2.69E-03 -130.97 -21.07 0.09 154.55 14 -12.43 0.24 166.56 8.44 2.64 -126.33 -49.01 3.54E-03 -138.45 -24.75 0.06 158.47 15 -13.75 0.21 163.42 8.47 2.65 -145.14 -47.72 4.11E-03 -158.18 -29.78 0.03 -153.13 16 -15.13 0.18 159.33 8.44 2.64 -166.53 -45.17 5.51E-03 175.62 -25.88 0.05 -123.66 17 -16.59 0.15 162.90 8.69 2.72 171.17 -44.82 5.74E-03 155.52 -20.77 0.09 -117.97 18 -18.59 0.12 171.69 8.71 2.73 150.24 -43.32 6.82E-03 135.56 -17.99 0.13 -120.53 19 -19.95 0.10 -173.49 8.76 2.74 128.84 -43.20 6.92E-03 111.61 -16.53 0.15 -125.92 20 -19.18 0.11 -154.71 8.68 2.72 106.41 -42.05 7.90E-03 89.64 -15.05 0.18 -134.47 21 -17.62 0.13 -142.23 8.65 2.71 85.73 -42.14 7.81E-03 74.32 -14.45 0.19 -142.80 22 -16.19 0.16 -138.96 9.07 2.84 64.35 -40.01 9.99E-03 57.07 -14.44 0.19 -151.66 23 -14.50 0.19 -140.00 8.53 2.67 40.98 -41.72 8.20E-03 30.87 -14.17 0.20 -159.25 24 -13.26 0.22 -141.73 8.44 2.64 19.92 -42.21 7.75E-03 10.66 -14.57 0.19 -163.44 25 -12.24 0.24 -143.90 8.82 2.76 -1.95 -41.31 8.60E-03 -12.92 -15.12 0.18 -170.40 26 -11.92 0.25 -149.24 8.11 2.54 -24.68 -38.31 1.21E-02 -33.09 -16.15 0.16 -177.73 27 -11.27 0.27 -153.35 8.41 2.63 -46.27 -39.03 1.12E-02 -49.00 -17.25 0.14 -177.36 28 -11.34 0.27 -158.37 8.60 2.69 -65.32 -41.74 8.18E-03 -51.65 -18.78 0.12 174.70 29 -11.23 0.27 -162.71 8.47 2.65 -86.91 -38.69 1.16E-02 -67.54 -20.71 0.09 178.70 30 -11.19 0.28 -168.87 8.31 2.60 -108.37 -36.72 1.46E-02 -98.62 -21.14 0.09 -178.81 31 -11.17 0.28 -171.85 8.36 2.62 -131.62 -36.29 1.53E-02 -116.44 -21.06 0.09 -173.56 32 -11.71 0.26 -178.55 8.38 2.62 -153.01 -34.84 1.81E-02 -144.42 -21.44 0.08 -167.22 33 -12.31 0.24 177.15 8.23 2.58 -174.09 -35.81 1.62E-02 -169.49 -23.56 0.07 -164.19 34 -12.39 0.24 178.75 8.21 2.57 164.71 -35.30 1.72E-02 162.06 -19.46 0.11 -143.08 35 -14.33 0.19 178.41 8.15 2.56 142.95 -33.65 2.08E-02 153.31 -20.37 0.10 -135.61 36 -14.63 0.19 174.11 8.13 2.55 120.78 -35.22 1.73E-02 134.39 -17.53 0.13 -144.76 37 -15.66 0.16 179.07 8.20 2.57 99.36 -33.96 2.01E-02 110.88 -17.39 0.13 -144.66 38 -17.38 0.14 -172.55 8.09 2.54 79.99 -33.63 2.08E-02 86.39 -18.34 0.12 -143.70 39 -17.73 0.13 175.32 8.33 2.61 56.48 -32.90 2.26E-02 75.36 -15.50 0.17 -168.59 40 -16.72 0.15 -162.20 7.98 2.51 35.53 -32.53 2.36E-02 44.17 -16.92 0.14 -160.05 41 -17.01 0.14 -159.26 7.77 2.45 14.46 -31.99 2.52E-02 28.89 -17.35 0.14 -174.76 6 S21 S12 S22 Typical Scattering Parameters [1], (Continued) Freq [GHz] S11 dB Mag Phase dB Mag Phase 42 -15.50 0.17 -158.31 7.61 2.40 -8.30 -33.42 2.13E-02 -0.50 -16.97 0.14 179.67 43 -14.80 0.18 -153.02 7.73 2.44 -34.27 -31.12 2.78E-02 -20.36 -17.73 0.13 -175.55 44 -14.68 0.18 -140.97 7.52 2.38 -53.64 -34.84 1.81E-02 8.78 -22.75 0.07 146.52 45 -13.31 0.22 -154.87 7.61 2.40 -74.69 -32.76 2.30E-02 -15.11 -20.52 0.09 171.71 46 -13.20 0.22 -149.60 7.70 2.43 -97.71 -32.73 2.31E-02 -55.67 -22.30 0.08 140.76 47 -13.40 0.21 -157.37 7.67 2.42 -119.57 -32.12 2.48E-02 -93.36 -25.95 0.05 169.29 48 -12.76 0.23 -164.27 7.69 2.42 -141.65 -30.78 2.89E-02 -99.61 -24.46 0.06 147.05 49 -12.35 0.24 -165.03 7.82 2.46 -164.67 -30.54 2.97E-02 -131.38 -34.20 0.02 159.74 50 -12.98 0.22 -178.67 7.81 2.46 172.08 -29.89 3.20E-02 -156.76 -25.26 0.05 175.77 51 -12.51 0.24 -173.74 7.83 2.46 149.86 -30.18 3.10E-02 -178.78 -33.52 0.02 -130.51 52 -13.61 0.21 -172.01 7.93 2.49 128.77 -28.27 3.86E-02 171.08 -31.57 0.03 -115.78 53 -13.92 0.20 177.60 7.77 2.45 105.87 -29.13 3.50E-02 136.16 -23.15 0.07 -132.42 54 -12.94 0.23 -179.13 7.71 2.43 80.50 -28.55 3.74E-02 109.76 -21.67 0.08 -114.64 55 -14.85 0.18 -177.74 8.22 2.58 58.11 -28.87 3.60E-02 93.24 -21.71 0.08 -147.76 56 -14.00 0.20 -172.76 8.41 2.63 37.15 -27.83 4.06E-02 73.29 -17.35 0.14 -132.07 57 -13.98 0.20 -174.58 8.12 2.55 13.47 -28.94 3.57E-02 40.39 -20.62 0.09 -128.62 58 -17.56 0.13 -164.98 8.39 2.63 -6.90 -28.90 3.59E-02 29.47 -18.73 0.12 168.41 59 -13.68 0.21 178.77 7.77 2.45 -31.83 -26.85 4.54E-02 7.31 -19.77 0.10 170.62 60 -17.29 0.14 -162.12 7.79 2.45 -54.89 -32.45 2.38E-02 -9.89 -19.16 0.11 139.41 61 -12.46 0.24 -178.85 8.33 2.61 -80.24 -29.70 3.27E-02 -42.64 -19.72 0.10 134.43 62 -15.19 0.17 -173.34 8.05 2.53 -103.95 -33.29 2.17E-02 -71.74 -19.74 0.10 89.74 63 -12.41 0.24 -161.80 7.96 2.50 -130.10 -28.76 3.65E-02 -71.24 -16.99 0.14 61.67 64 -14.96 0.18 162.01 7.90 2.48 -152.97 -30.55 2.97E-02 -92.14 -24.01 0.06 75.15 65 -10.79 0.29 -154.54 8.43 2.64 -177.52 -29.94 3.19E-02 -126.69 -12.03 0.25 32.27 66 -14.34 0.19 158.99 7.94 2.49 159.47 -29.50 3.35E-02 -150.30 -20.43 0.10 76.21 67 -13.08 0.22 -134.82 8.11 2.54 131.55 -26.52 4.72E-02 177.09 -18.80 0.11 -51.51 68 -12.81 0.23 -173.73 8.69 2.72 107.29 -27.56 4.19E-02 158.17 -20.56 0.09 -43.17 69 -14.26 0.19 172.94 8.37 2.62 83.04 -27.65 4.15E-02 123.32 -24.54 0.06 -140.20 70 -16.20 0.15 -173.41 8.64 2.70 58.43 -28.20 3.89E-02 104.25 -19.68 0.10 -124.67 71 -11.56 0.26 -171.73 8.08 2.54 26.64 -26.98 4.48E-02 86.83 -21.32 0.09 178.78 72 -18.26 0.12 126.51 8.35 2.62 2.92 -28.07 3.95E-02 62.28 -18.15 0.12 136.89 73 -11.30 0.27 172.49 7.98 2.51 -24.03 -27.77 4.09E-02 36.07 -17.75 0.13 96.33 74 -14.30 0.19 -169.17 8.07 2.53 -51.96 -27.62 4.16E-02 17.47 -15.45 0.17 58.31 75 -15.13 0.18 160.81 7.34 2.33 -80.22 -27.46 4.24E-02 -7.47 -13.49 0.21 23.56 76 -12.17 0.25 170.35 7.64 2.41 -108.51 -27.29 4.32E-02 -31.56 -12.78 0.23 20.08 77 -11.84 0.26 -175.68 7.92 2.49 -137.63 -27.16 4.39E-02 -55.43 -12.98 0.22 8.02 78 -12.45 0.24 164.14 7.22 2.30 -166.12 -27.09 4.42E-02 -72.41 -11.83 0.26 -20.15 79 -14.60 0.19 157.52 7.11 2.27 165.62 -26.96 4.49E-02 -99.83 -13.06 0.22 -30.35 80 -12.21 0.25 147.32 7.73 2.43 133.90 -27.24 4.34E-02 -124.77 -17.30 0.14 -25.89 81 -12.46 0.24 159.37 7.77 2.45 106.11 -27.48 4.23E-02 -155.86 -28.28 0.04 -30.33 82 -14.32 0.19 161.28 8.14 2.55 74.42 -28.06 3.96E-02 173.77 -17.84 0.13 60.41 7 S21 S12 dB S22 Mag Phase dB Mag Phase Typical Scattering Parameters [1], (Continued) Freq [GHz] S11 S21 S12 S22 dB Mag Phase dB Mag Phase dB Mag Phase dB Mag Phase 83 -16.64 0.15 152.72 6.96 2.23 43.86 -28.93 3.58E-02 143.86 -15.28 0.17 36.42 84 -16.13 0.16 144.48 6.75 2.18 11.94 -28.86 3.61E-02 114.26 -11.71 0.26 20.29 85 -19.10 0.11 166.48 5.98 1.99 -15.86 -29.68 3.28E-02 76.14 -11.91 0.25 11.38 86 -13.97 0.20 134.55 5.16 1.81 -48.54 -31.27 2.73E-02 49.12 -9.97 0.32 -0.26 87 -12.56 0.24 135.11 4.43 1.67 -79.68 -31.35 2.71E-02 10.38 -9.78 0.32 -6.24 88 -11.57 0.26 131.84 4.03 1.59 -115.31 -32.51 2.37E-02 -19.05 -11.31 0.27 -1.38 89 -12.25 0.24 120.86 1.67 1.21 -149.46 -34.59 1.86E-02 -63.31 -8.64 0.37 -2.01 90 -12.49 0.24 126.24 -0.80 0.91 168.79 -35.60 1.66E-02 -93.76 -6.63 0.47 0.98 91 -13.24 0.22 111.67 -3.93 0.64 139.06 -37.67 1.31E-02 -137.97 -4.99 0.56 -3.49 92 -12.60 0.23 116.82 -7.69 0.41 99.48 -42.20 7.76E-03 -120.24 -4.60 0.59 -7.41 93 -15.19 0.17 115.46 -12.24 0.24 70.72 -45.98 5.03E-03 -167.53 -3.23 0.69 -14.77 94 -15.57 0.17 98.36 -15.43 0.17 40.10 -43.49 6.69E-03 148.42 -2.13 0.78 -17.32 95 -15.73 0.16 82.30 -18.17 0.12 15.26 -46.84 4.55E-03 137.70 -2.13 0.78 -29.11 96 -14.37 0.19 97.00 -21.79 0.08 -13.16 -55.96 1.59E-03 153.58 -2.46 0.75 -35.83 97 -12.01 0.25 81.38 -24.88 0.06 -34.33 -48.03 3.97E-03 110.84 -1.60 0.83 -40.19 98 -7.91 0.40 75.00 -27.42 0.04 -66.49 -49.87 3.21E-03 38.33 -0.85 0.91 -52.74 99 -12.46 0.24 65.38 -31.17 0.03 -91.90 -103.00 7.08E-06 92.96 -1.52 0.84 -55.74 100 -11.59 0.26 68.80 -34.78 0.02 -113.10 -71.50 2.66E-04 -26.59 -2.62 0.74 -41.36 Note: 1. Data obtained from an on-wafer condition. Application and Usage AMMC-5025 is biased with a single positive drain supply (Vdd), a negative gate supply (Vg1), and has a positive control gate supply (Vg2). For best overall performance, the recommended bias condition for the AMMC-5025 is Vdd = 5 V and Idd = 100 mA. To achieve this drain current level, Vg1 is typically –1.8V. Typically, DC current flow for Vg1 is –10 mA. Open circuit is the default setting for Vg2 when not utilizing gain control. Minor improvements in performance are possible depending on the application. The drain bias voltage range is 3 to 6V and the quiescent drain current biasing range is 80mA to 120mA. Input and output RF ports are DC coupled; therefore, DC decoupling capacitors are required if there are DC paths. RF bond connections should be kept as short as possible to reduce RF lead inductance which will degrade performance above 20 GHz. Ground connections are made with plated through-holes to the backside of the device; therefore, ground wires are not needed. 8 Using the simplest form of assembly (Figure 11), the device is capable of delivering flat gain over a 2-80 GHz range with a minimum of gain slope and ripple. Figure 11 shows a typical assembly application. However, this device is designed with DC coupled RF I/O ports, and operation may be extended to lower frequencies (<2 GHz) through the use of off-chip low-frequency extension circuitry and proper external biasing components. With low frequency bias extension it may be used in a variety of time-domain applications (through 80 Gb/s). Refer to the low frequency extension section of Avago Applications Note 5359 “AMMC-5024 30KHz-40GHz TWA Operational Guide” for detailed information on use below 2 GHz. Note: 1. Eutectic attach is not recommended and may jeopardize reliability of the device. Vd 1 10: Aux_Vd 15pF 10: 42: 1pF 480: 280: RF OUT 50: 50: Vg2 Vg2 160: 50: RF_IN Figure 9. Simplified schematic for AMMC5025 0 100 250 Vg2 1600 430 Vd Vd_Aux 950 950 700 RF_IN RF_OUT 250 Vg2 0 0 Vg1 0 Figure 10. Bonding pad location 9 1390 1600 Vg1 VD=+5V 100pF Vg2: Gain control 4nH Inductor for operation to 2GHz (200mil bond wire) RF_OUT RF_IN 100pF VG=-1.8V Figure 11. Recommended assemble example Note: No RF performance degradation is seen due to ESD up to 300V HBM and 70V MM. The user is reminded that this device is ESD sensitive and needs to be handled with all necessary ESD protocols. 10 Names and Contents of the Toxic and Hazardous Substances or Elements in the Products Part Name Toxic and Hazardous Substances or Elements Lead (Pb) (Pb) Mercury (Hg) Hg Cadmium (Cd) Cd Hexavalent (Cr(VI)) Cr(VI) Polybrominated biphenyl (PBB) PBB 100pF capacitor : indicates that the content of the toxic and hazardous substance in all the homogeneous materials of the part is below the concentration limit requirement as described in SJ/T 11363-2006. : indicates that the content of the toxic and hazardous substance in at least one homogeneous material of the part exceeds the concentration limit requirement as described in SJ/T 11363-2006. (The enterprise may further explain the technical reasons for the “x” indicated portion in the table in accordance with the actual situations.) SJ/T 11363-2006 SJ/T 11363-2006 “×” Note: EU RoHS compliant under exemption clause of “lead in electronic ceramic parts (e.g. piezoelectronic devices)” For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. AV02-2200EN - October 14, 2009 Polybrominated diphenylether (PBDE) PBDE