DMN2320UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(on) 20V 320mΩ @ VGS= 4.5V 500mΩ @ VGS= 2.5V 1000mΩ @ VGS= 1.8V Footprint of just 0.6mm2 – thirteen times smaller than SOT23 0.4mm profile – ideal for low profile applications Low Gate Threshold Voltage Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) ESD Protected Gate 2KV • • • • • • • ID max TA = +25°C 1.0A 0.65A 0.4A Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • • • Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) • • Load switch • D X2-DFN1006-3 G S D G ESD PROTECTED TO 2kV Bottom View Top View Internal Schematic Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Part Number DMN2320UFB4-7B Notes: Marking ND Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information DMN2320UFB4-7B ND ND = Product Type Marking Code Top View Bar Denotes Gate and Source Side DMN2320UFB4 Document number: DS37892 Rev. 1 - 2 1 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN2320UFB4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V Steady State Unit V V IDM Value 20 ±8 1.0 0.7 6 Symbol PD PD RθJA RθJA TJ, TSTG Value 0.52 1.07 240 117 -55 to +150 Unit W W °C/W °C/W °C TA = +25°C TA = +100°C ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1 10 V µA µA VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS (ON) 0.95 320 500 1,000 1.2 mΩ VSD 0.7 V Static Drain-Source On-Resistance 0.50 - VDS = VGS, ID = 250µA VGS = 4.5V, ID = 500mA VGS = 2.5V, ID = 400mA VGS = 1.8V, ID = 100mA VGS = 0V, IS = 300mA Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 71 12 9.4 69 0.89 0.14 0.16 4.9 6.9 21.7 10.6 - pF pF pF Ω nC nC nC ns ns ns ns Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 1A VDS = 10V, ID = 1A VGS = 4.5V, RG = 6Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN2320UFB4 Document number: DS37892 Rev. 1 - 2 2 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN2320UFB4 2.0 2.0 VGS = 4.5V VDS = 5V VGS = 2.5V VGS = 1.8V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.0V 1.5 VGS = 1.5V 1.0 0.5 1.5 1.0 TA = 150°C 0.5 TA = 125°C VGS = 1.2V TA = 85°C TA = 25°C TA = -55°C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.4 0.3 0.2 VGS = 2.5V VGS = 4.5V 0.1 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 2.5V ID = 500mA 1.2 1.0 0.8 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN2320UFB4 Document number: DS37892 Rev. 1 - 2 3 of 7 www.diodes.com 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 0.8 VGS = 4.5V 0.6 0.4 TA = 125°C TA = 150°C 0.2 TA = 85°C TA = 25°C TA = -55°C 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 1.0A 0.6 -50 0 2 1.6 1.4 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.25 0.5 0.75 1 1.25 1.5 1.75 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 2 0.8 0.6 0.4 VGS = 2.5V ID = 500mA 0.2 VGS = 4.5V ID = 1.0A 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature April 2015 © Diodes Incorporated DMN2320UFB4 2.0 1.0 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 ID = 1mA 0.8 0.6 ID = 250µA 0.4 1.2 TA = 25°C 0.8 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1000 C iss 100 C oss 10 C rss 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 8 VGS GATE THRESHOLD VOLTAGE (V) CT , JUNCTION CAPACITANCE (pF) 1.6 VDS = 10V 6 I D = 1.0A 4 2 f = 1MHz 0 1 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate Charge 1.8 10 ID , DRAIN CURRENT (A) RDS(on) Limited PW = 100µs 1 DC PW = 10s PW = 1s PW = 100ms PW = 10ms 0.1 T J (m ax ) = 150°C T A = 25°C 0.01 0.1 PW = 1ms V GS = 4.5V Single Pulse DUT on 1 * MRP Board 1 10 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DMN2320UFB4 Document number: DS37892 Rev. 1 - 2 100 4 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN2320UFB4 r(t ), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 227°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.000001 0.00001 0.0001 DMN2320UFB4 Document number: DS37892 Rev. 1 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 12 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 April 2015 © Diodes Incorporated DMN2320UFB4 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A1 D b1 E e b2 L2 L3 X2-DFN1006-3 Dim Min Max Typ A 0.40 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 All Dimensions in mm L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMN2320UFB4 Document number: DS37892 Rev. 1 - 2 6 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN2320UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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