IXFA22N65X2 IXFP22N65X2 IXFH22N65X2 X2-Class HiPerFETTM Power MOSFET VDSS ID25 = 650V = 22A 145m RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 22 A IDM TC = 25C, Pulse Width Limited by TJM 44 A IA TC = 25C 5 A EAS TC = 25C 1 J dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns PD TC = 25C 390 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10.65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 TO-220AB (IXFP) G DS D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 1.5mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 5.0 V 100 nA TJ = 125C 10 A 1.5 mA Applications 145 m © 2016 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100682B(03/16) IXFA22N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 8 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 14 S 1.0 2190 pF 1450 pF 1.3 pF 92 330 pF pF 30 ns 37 ns 42 ns 18 ns 37 nC 12 nC 14 nC Crss IXFP22N65X2 IXFH22N65X2 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.32 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 22 A ISM Repetitive, pulse Width Limited by TJM 88 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 11A, -di/dt = 100A/μs 145 890 12 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA22N65X2 IXFP22N65X2 IXFH22N65X2 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 60 VGS = 10V 9V 20 VGS = 10V 50 8V 16 9V I D - Amperes I D - Amperes 40 12 7V 8 8V 30 20 7V 6V 4 10 5V 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 11A Value vs. Junction Temperature 3.8 VGS = 10V 20 3.0 R DS(on) - Normalized 16 I D - Amperes VGS = 10V 3.4 8V 7V 12 8 6V 4 5V 2.6 I D = 22A 2.2 1.8 I D = 11A 1.4 1.0 0.6 4V 0 0.2 0 1 2 3 4 5 6 7 -50 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 11A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 5.0 150 1.3 4.5 VGS = 10V 3.5 3.0 2.5 TJ = 25ºC 2.0 1.5 BVDSS / VGS(th) - Normalized 1.2 TJ = 125ºC 4.0 RDS(on) - Normalized -25 VDS - Volts BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 10 20 30 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 40 50 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA22N65X2 IXFP22N65X2 IXFH22N65X2 Fig. 8. Input Admittance Fig. 7. Maxing Drain Current vs. Case Temperature 24 20 20 16 - Amperes TJ = 125ºC 25ºC - 40ºC 12 I I D 12 D - Amperes 16 8 8 4 4 0 0 -50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 70 24 TJ = - 40ºC 60 50 - Amperes 25ºC 16 125ºC 12 40 S 30 TJ = 125ºC I g fs - Siemens 20 8 20 4 TJ = 25ºC 10 0 0 0 4 8 12 16 0.3 20 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 V SD - Volts I D - Amperes Fig. 12. Capacitance Fig. 11. Gate Charge 100000 10 VDS = 325V 10000 Capacitance - PicoFarads I D = 11A 8 VGS - Volts I G = 10mA 6 4 2 Ciss 1000 100 Coss 10 1 0 Crss f = 1 MHz 0.1 0 5 10 15 20 25 30 35 40 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA22N65X2 Fig. 13. Output Capacitance Stored Energy IXFP22N65X2 IXFH22N65X2 Fig. 14. Forward-Bias Safe Operating Area 20 100 RDS(on) Limit 18 25µs 16 100µs I D - Amperes E OSS - MicroJoules 10 14 12 10 8 1 6 1ms 0.1 4 TJ = 150ºC 2 TC = 25ºC Single Pulse 0 10ms 0.01 0 100 200 300 400 500 600 10 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_22N65X2(X4-S602) 12-14-15 IXFA22N65X2 TO-263 Outline IXFP22N65X2 IXFH22N65X2 TO-247 Outline TO-220 Outline D A A2 A B E Q S R D2 D1 D P1 1 2 4 3 L1 C 1 = Gate 2 = Drain 3 = Source 4 = Drain E1 L A1 C b b2 b4 e Pins: 1 - Gate 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 2 - Drain 1 - Gate 2,4 - Drain 3 - Source