DMNH4026SSD 40V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) MAX 40V 24mΩ @VGS = 10V 32mΩ @VGS = 4.5V ID TA = +25°C 7.5A 6.5A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMNH4026SSDQ) Mechanical Data Motor Control Backlighting Power Management Functions DC-DC Converters Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Below Terminals: Finish Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D2 D1 SO-8 Pin1 S1 D1 G1 D1 S2 D2 G2 G1 D2 G2 Top View S2 S1 Top View Internal Schematic Equivalent Circuit Ordering Information (Note 4) Part Number DMNH4026SSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking NH4026SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) NH4026SD YY WW 1 DMNH4026SSD Document number: DS38682 Rev. 1 - 2 4 1 of 7 www.diodes.com July 2016 © Diodes Incorporated DMNH4026SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage VDSS VGSS Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +100°C ID Maximum Continuous Body Diode Forward Current (Note 6) Value 40 Unit V ±20 V 7.5 5.3 A IS IDM 2.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) 60 A Avalanche Current (Note 7) L = 0.1mH IAS 18 A Avalanche Energy (Note 7) L = 0.1mH EAS 18 mJ Thermal Characteristics Characteristic Symbol Total Power Dissipation (Note 5) TA = +25°C Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) TA = +25°C Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics Value 1.5 101 59 2.0 74 43 10.5 -55 to +175 PD RθJA PD RθJA RθJC TJ, TSTG Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 40 VGS = 0V, ID = 250µA IDSS VDS = 40V, VGS = 0V IGSS µA Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1 V Zero Gate Voltage Drain Current 100 nA VGS = ±20V, VDS = 0V 1 15 3 V VDS = VGS, ID = 250µA 24 20 0.7 32 1.0 Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance VGS(TH) RDS(ON) VSD Ciss 1060 84 Coss Crss 58 mΩ VGS = 0V, IS = 1.0A pF VDS = 20V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 20V, ID = 8A ns VDD = 25V, RL = 2.5Ω VGS = 10V, Rg = 3Ω Rg 1.6 Total Gate Charge (VGS = 4.5V) Qg 8.8 Total Gate Charge (VGS = 10V) Gate-Source Charge Qg 19.1 3.0 Qgs Qgd tD(ON) 2.5 Turn-On Delay Time 5.3 Turn-On Rise Time tR 7.1 Turn-Off Delay Time tD(OFF) 15.1 tF 4.8 10.5 tRR QRR ns 4.15 nC Gate-Drain Charge Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VGS = 4.5V, ID = 5A V Gate Resistance Reverse Transfer Capacitance VGS = 10V, ID = 6A IF = 8A, di/dt = 100A/μs IF = 8A, di/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMNH4026SSD Document number: DS38682 Rev. 1 - 2 2 of 7 www.diodes.com July 2016 © Diodes Incorporated DMNH4026SSD 30.0 30 VDS = 5V VGS = 4.0V 20.0 VGS = 4.5V VGS = 10.0V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.5V 25.0 15.0 VGS = 3.0V 10.0 5.0 15 TJ=125℃ 10 TJ=25℃ TJ=175℃ TJ=-55℃ 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3 0.019 VGS = 4.5V 0.017 0.016 0.015 0.014 0.013 VGS = 10V 0.012 0.011 0.01 0 5 10 15 20 25 1.5 30 175℃ 0.025 150℃ 125℃ 85℃ 25℃ 0.01 -55℃ 0.005 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMNH4026SSD Document number: DS38682 Rev. 1 - 2 3.5 4 0.04 0.035 0.03 0.025 0.02 ID = 6A 0.015 0.01 0.005 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 10V 0.015 3 0.045 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.02 2.5 0.05 ID, DRAIN-SOURCE CURRENT (A) 0.03 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.02 0.018 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) TJ=85℃ TJ=150℃ 5 VGS=2.5V 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 20 3 of 7 www.diodes.com 20 2.2 2 1.8 VGS = 10V, ID = 6A 1.6 1.4 1.2 VGS = 4.5V, ID = 5A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6.On-Resistance Variation with Temperature July 2016 © Diodes Incorporated 0.035 0.03 0.025 VGS = 4.5V, ID = 5A 0.02 0.015 VGS = 10V, ID = 6A 0.01 0.005 -50 -25 0 25 50 75 2.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) DMNH4026SSD 2 1.8 ID = 1mA 1.6 ID = 250μA 1.4 1.2 1 0.8 0.6 100 125 150 175 -50 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 30 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 10000 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 IS, SOURCE CURRENT (A) -25 20 15 TJ = 85oC 10 125oC TJ = TJ = 150oC 5 TJ = 175oC TJ = 25oC Ciss 1000 Coss 100 Crss TJ = -55oC 10 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 40 100 10 RDS(ON) Limited PW =100µs ID, DRAIN CURRENT (A) VGS (V) 8 6 4 VDS = 20V, ID = 8.0A 2 10 1 0.1 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 11. Gate Charge DMNH4026SSD Document number: DS38682 Rev. 1 - 2 16 18 20 0.01 PW =1ms PW =10ms PW =100ms TJ(Max) = 175℃ PW =1s TC = 25℃ Single Pulse PW =10s DUT on 1*MRP Board DC VGS= 10V 0.1 4 of 7 www.diodes.com 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 July 2016 © Diodes Incorporated DMNH4026SSD 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 D=Single Pulse RθJA(t) = r(t) * RθJA RθJA = 100℃/W Duty Cycle, D = t1 / t2 0.001 1E-05 DMNH4026SSD Document number: DS38682 Rev. 1 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 July 2016 © Diodes Incorporated DMNH4026SSD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 E 1 b E1 h ) ides All s 9° ( A R 1 0. e Q 45° 7° c 4° ± 3° A1 E0 L Gauge Plane Seating Plane SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C DMNH4026SSD Document number: DS38682 Rev. 1 - 2 X 6 of 7 www.diodes.com July 2016 © Diodes Incorporated DMNH4026SSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com DMNH4026SSD Document number: DS38682 Rev. 1 - 2 7 of 7 www.diodes.com July 2016 © Diodes Incorporated