IXYS IXYP20N65B3 Advance technical information Datasheet

Advance Technical Information
IXYA20N65B3
IXYP20N65B3
IXYH20N65B3
XPTTM 650V IGBT
GenX3TM
VCES =
IC110 =
VCE(sat) 
tfi(typ) =
Extreme Light Punch Through
IGBT for 5-30kHz Switching
650V
20A
2.10V
87ns
TO-263 (IXYA)
G
E
C (Tab)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
650
650
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
58
20
108
A
A
A
TO-247 AD (IXYH)
IA
EAS
TC = 25°C
TC = 25°C
10
200
A
mJ
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
ICM = 40
@VCE  VCES
A
tsc
(SCSOA)
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
5
μs
PC
TC = 25°C
230
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
2.5
3.0
6.0
g
g
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-247 & TO-220)
Weight
TO-263
TO-220
TO-247
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 250A, VGE = 0V
650
VGE(th)
IC
= 250A, VCE = VGE
3.5
ICES
VCE = VCES, VGE = 0V
VCE = 0V, VGE = 20V
VCE(sat)
IC
G
V
10
150
A
A
100
nA
© 2015 IXYS CORPORATION, All Rights Reserved
2.10
C (Tab)
C (Tab)
C
= Collector
Tab = Collector
Features





Optimized for 5-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
International Standard Packages
Advantages




6.0
1.77
2.05
E
G = Gate
E = Emitter


= 20A, VGE = 15V, Note 1
TJ = 150C
C
CE
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
V
TJ = 150C
IGES
TO-220 (IXYP)
V
V





Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100644(02/15)
IXYA20N65B3 IXYP20N65B3
IXYH20N65B3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
8.5
IC = 20A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 400V, RG = 20
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 20A, VGE = 15V
VCE = 400V, RG = 20
Note 2
RthJC
RthCS
RthCS
TO-220
TO-247
Notes:
TO-220 Outline
14
S
826
66
19
pF
pF
pF
29
6
14
nC
nC
nC
12
25
0.50
103
87
0.45
ns
ns
mJ
ns
ns
mJ
0.70
13
26
0.93
124
147
0.76
ns
ns
mJ
ns
ns
mJ
0.50
0.21
0.65 °C/W
°C/W
°C/W
Pins:
1 - Gate
3 - Emitter
2 - Collector
TO-247 Outline
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
TO-263 Outline
1 - Gate
2,4 - Collector
3 - Emitter
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYA20N65B3 IXYP20N65B3
IXYH20N65B3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
40
VGE = 15V
13V
12V
11V
35
VGE = 15V
100
10V
14V
25
20
I C - Amperes
I C - Amperes
30
120
9V
15
5
12V
60
11V
10V
9V
20
7V
8V
0
7V
0
0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
20
25
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
40
2.0
VGE = 15V
13V
12V
11V
30
VGE = 15V
1.8
10V
30
I C = 40A
VCE(sat) - Normalized
35
I C - Amperes
13V
40
8V
10
80
25
9V
20
15
8V
10
7V
1.6
1.4
I C = 20A
1.2
1.0
0.8
5
I C = 10A
6V
0.6
0
0
0.5
1
1.5
2
2.5
3
3.5
-50
4
-25
0
25
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
6
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Input Admittance
45
40
TJ = 25ºC
5
35
I C - Amperes
VCE - Volts
30
4
I C = 40A
3
25
20
TJ = 150ºC
25ºC
- 40ºC
15
20A
10
2
5
10A
0
1
7
8
9
10
11
12
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
13
14
15
4
5
6
7
VGE - Volts
8
9
10
175
IXYA20N65B3 IXYP20N65B3
IXYH20N65B3
Fig. 7. Transconductance
Fig. 8. Gate Charge
24
16
TJ = - 40ºC
VCE = 10V
I C = 20A
I G = 10mA
12
25ºC
16
VGE - Volts
g f s - Siemens
VCE = 325V
14
20
150ºC
12
10
8
6
8
4
4
2
0
0
0
5
10
15
20
25
30
35
40
45
50
0
55
5
10
15
20
25
I C - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
30
10,000
40
Cies
1,000
30
I C - Amperes
Capacitance - PicoFarads
f = 1 MHz
Coes
20
100
10
TJ = 150ºC
RG = 20Ω
dv / dt < 10V / ns
Cres
0
10
0
5
10
15
20
25
30
35
100
40
200
300
500
600
700
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Forward-Bias Safe Operating Area
1
1000
VCE(sat) Limit
D = 0.5
25µs
10
100µs
1
Z (th)JC - ºC / W
100
I D - Amperes
400
VCE - Volts
VCE - Volts
D = 0.2
0.1
D = 0.1
tp
D = 0.02
D = 0.01
TJ = 175ºC
1ms
TC = 25ºC
Single Pulse
DC
0.1
1
D = tp / T
D = 0.05
10
100
T
Single Pulse
10ms
1000
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
Pulse Width - Second
1.E-01
1.E+00
IXYA20N65B3 IXYP20N65B3
IXYH20N65B3
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
2.0
Eoff
---
1.6
4.5
1.4
4.0
VCE = 400V
1.4
3.0
I C = 40A
1.2
2.5
1.0
2.0
0.8
1.5
0.4
40
50
60
70
80
90
2.0
0.8
1.6
0.6
1.2
0.4
0.2
0.5
100
0.0
Eoff
Eon
0.4
0.0
10
----
3.2
200
2.8
180
RG = 20Ω , VGE = 15V
VCE = 400V
2.4
15
20
25
0.6
1.2
I C = 20A
t f i - Nanoseconds
1.6
0.8
0.2
0.4
0.0
25
50
75
100
125
tfi
td(off) - - - -
VCE = 400V
300
140
240
I C = 20A
120
180
I C = 40A
100
120
80
60
20
30
40
50
tfi
210
180
180
160
0
100
80
90
TJ = 25ºC
40
0
I C - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
35
40
t f i - Nanoseconds
120
30
140
td(off) - - - 130
140
I C = 20A
120
120
110
100
100
I C = 40A
60
80
30
60
90
25
50
75
100
TJ - Degrees Centigrade
125
80
150
t d(off) - Nanoseconds
TJ = 150ºC
120
t d(off) - Nanoseconds
t f i - Nanoseconds
90
VCE = 400V
150
25
80
RG = 20Ω , VGE = 15V
VCE = 400V
20
70
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
tfi
td(off) - - - -
160
15
60
RG - Ohms
RG = 20Ω , VGE = 15V
10
420
360
60
0.0
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
200
40
TJ = 150ºC, VGE = 15V
TJ - Degrees Centigrade
240
35
t d(off) - Nanoseconds
0.8
- MilliJoules
2.0
on
1.0
0.4
30
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
160
I C = 40A
E
Eoff - MilliJoules
1.2
0.8
TJ = 25ºC
I C - Amperes
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
1.4
2.4
TJ = 150ºC
RG - Ohms
1.6
2.8
1.0
1.0
I C = 20A
30
----
Eon - MilliJoules
3.5
20
Eon
VCE = 400V
1.2
E on - MilliJoules
1.6
0.6
Eoff
3.2
RG = 20Ω , VGE = 15V
TJ = 150ºC , VGE = 15V
1.8
Eoff - MilliJoules
Eon -
5.0
Eoff - MilliJoules
2.2
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
IXYA20N65B3 IXYP20N65B3
IXYH20N65B3
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
160
tri
I C = 40A
t r i - Nanoseconds
100
50
I C = 20A
40
60
30
40
20
20
10
0
30
40
50
60
70
80
90
0
100
tri
15
40
14
TJ = 150ºC
30
13
TJ = 25ºC
20
12
10
11
0
10
10
15
20
25
30
35
40
I C - Amperes
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
80
16
VCE = 400V
50
RG - Ohms
90
td(on) - - - -
t d(on) - Nanoseconds
60
17
RG = 20Ω , VGE = 15V
t d(on) - Nanoseconds
VCE = 400V
80
tri
60
70
120
20
70
80
td(on) - - - -
TJ = 150ºC, VGE = 15V
140
90
t r i - Nanoseconds
180
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
td(on) - - - -
18
17
RG = 20Ω , VGE = 15V
16
VCE = 400V
60
15
I C = 40A
50
14
40
13
30
12
I C = 20A
20
11
10
25
50
75
100
t d(on) - Nanoseconds
t r i - Nanoseconds
70
125
10
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_20N65B3D1(3D-Y42) 02-15-2015
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