NGTB50N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • • • • • • www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices 50 A, 600 V VCEsat = 1.50 V EOFF = 0.6 mJ C Typical Applications • Motor Drive Inverters • Industrial Switching • Welding G ABSOLUTE MAXIMUM RATINGS Rating E Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 100 50 A 100 50 C Diode Pulsed Current TPULSE Limited by TJ Max IFM 200 A Pulsed collector current, Tpulse limited by TJmax ICM 200 A Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage VGE $20 V V $30 Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) G Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C TO−247 CASE 340AL E MARKING DIAGRAM 50N60L2 AYWWG W 500 250 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB50N60L2WG © Semiconductor Components Industries, LLC, 2015 July, 2015 − Rev. 4 1 Package Shipping TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB50N60L2W/D NGTB50N60L2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.28 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.62 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 175°C VCEsat 1.30 − 1.50 1.85 1.80 − V VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 175°C ICES − − − 1.0 0.1 4.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 7500 − pF VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 300 − Parameter STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance Reverse transfer capacitance Cres − 190 − Gate charge total Qg − 310 − Gate to emitter charge Qge − 60 − Qgc − 150 − td(on) − 110 − tr − 48 − td(off) − 270 − tf − 70 − Eon − 1.25 − Turn−off switching loss Eoff − 0.6 − Total switching loss Ets − 1.85 − Turn−on delay time td(on) − 115 − tr − 50 − td(off) − 280 − VCE = 480 V, IC = 50 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V Rise time Turn−off delay time Fall time TJ = 150°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V tf − 100 − Eon − 1.6 − Turn−off switching loss Eoff − 1.0 − Total switching loss Ets − 2.6 − VF 1.40 − 1.70 2.40 2.50 − Turn−on switching loss ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 50 A VGE = 0 V, IF = 50 A, TJ = 175°C TJ = 25°C IF = 50 A, VR = 200 V diF/dt = 200 A/ms TJ = 175°C IF = 50 A, VR = 400 V diF/dt = 200 A/ms V trr − 67 − ns Qrr − 0.30 − mC Irrm − 7.4 − A trr − 143 − ns Qrr − 1.40 − mC Irrm − 15 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB50N60L2WG TYPICAL CHARACTERISTICS 200 VGE = 20 V to 13 V 180 TJ = 25°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 200 160 140 11 V 120 100 10 V 80 60 40 9V 20 8V 7V 7 0 0 1 2 3 4 5 6 140 TJ = 150°C 120 11 V 100 10 V 80 60 9V 40 8V 7V 20 0 0 1 2 3 4 5 7 6 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 160 VGE = 20 V to 13 V TJ = −55°C IC, COLLECTOR CURRENT (A) 180 160 11 V 140 120 100 10 V 80 60 7V 40 9V 20 0 8V 0 1 2 3 4 5 6 7 140 120 100 80 60 40 TJ = 150°C 20 TJ = 25°C 0 8 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 2.50 100,000 TJ = 25°C IC = 75 A 2.00 IC = 50 A 1.50 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 13 V 160 8 200 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V to 15 V 180 IC = 25 A 1.00 0.50 0 −75 −50 −25 Cies 10,000 1000 Coes 100 Cres 10 1 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 NGTB50N60L2WG TYPICAL CHARACTERISTICS 16 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 70 60 50 40 30 20 TJ = 150°C 10 TJ = 25°C 0 0 0.5 1.0 1.5 VCE = 400 V 14 12 10 8 6 4 VCE = 400 V VGE = 15 V IC = 50 A 2 0 2.0 2.5 3.0 3.5 0 4.0 50 100 250 200 150 300 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 1.8 350 1000 Eon 1.4 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 1.6 1.2 1.0 Eoff 0.8 0.6 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 0.4 0.2 0 0 20 40 60 80 100 120 140 td(on) 100 tf tr VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 10 0 160 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 160 1000 3.5 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 2.5 Eon SWITCHING TIME (ns) 3.0 SWITCHING LOSS (mJ) td(off) 2.0 Eoff 1.5 1.0 td(off) tf 100 td(on) tr VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 0.5 0 5 15 25 35 45 55 65 75 85 10 95 5 15 25 35 45 55 65 75 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 85 95 NGTB50N60L2WG TYPICAL CHARACTERISTICS 10,000 VCE = 400 V VGE = 15 V TJ = 150°C IC = 50 A SWITCHING LOSS (mJ) 7 6 SWITCHING TIME (ns) 8 Eon 5 4 3 Eoff 2 VCE = 400 V VGE = 15 V TJ = 150°C IC = 50 A 1000 td(on) 100 tf tr 1 0 10 5 15 25 35 45 55 65 75 85 5 25 35 45 55 65 75 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 14. Switching Time vs. Rg 85 1000 VGE = 15 V TJ = 150°C IC = 50 A Rg = 10 W 2.0 Eon 1.5 SWITCHING TIME (ns) 2.5 SWITCHING LOSS (mJ) 15 Figure 13. Switching Loss vs. Rg 3.0 Eoff 1.0 td(off) td(on) tf 100 tr VGE = 15 V TJ = 150°C IC = 50 A Rg = 10 W 0.5 0 150 200 10 250 300 350 400 450 500 550 600 150 200 250 300 350 400 450 500 550 600 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1000 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) td(off) 50 ms 100 100 ms dc operation 10 1 ms 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 1 10 100 10 VGE = 15 V, TC = 125°C 1 100 1000 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB50N60L2WG Qrr, REVERSE RECOVERY CHARGE (mC) TYPICAL CHARACTERISTICS trr, REVERSE RECOVERY TIME (ns) 160 140 TJ = 175°C, IF = 50 A 120 100 TJ = 25°C, IF = 50 A 80 60 40 300 500 700 900 1100 1300 TJ = 175°C, IF = 50 A 2.0 1.5 1.0 TJ = 25°C, IF = 50 A 0.5 0 100 300 500 700 900 1100 diF/dt, DIODE CURRENT SLOPE (A/m) diF/dt, DIODE CURRENT SLOPE (A/m) Figure 19. trr vs. diF/dt (VR = 400 V) Figure 20. Qrr vs. diF/dt (VR = 400 V) 50 1300 3.5 40 VF, FORWARD VOLTAGE (V) Irm, REVERSE RECOVERY CURRENT (A) 100 2.5 TJ = 175°C, IF = 50 A 30 20 TJ = 25°C, IF = 50 A 10 300 500 700 900 1100 IF = 75 A 2.5 IF = 50 A 2.0 IF = 25 A 1.5 1.0 −75 −50 −25 0 100 3.0 1300 0 25 50 75 100 125 150 175 200 diF/dt, DIODE CURRENT SLOPE (A/m) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Irm vs. diF/dt (VR = 400 V) Figure 22. VF vs. TJ www.onsemi.com 6 NGTB50N60L2WG TYPICAL CHARACTERISTICS SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.282 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% R1 Junction R2 C1 0.001 0.000001 Case Cn C2 Ri (°C/W) Ci (J/°C) 0.026955 0.024252 0.022476 0.055395 0.112157 0.040934 0.003710 0.013039 0.044492 0.057085 0.089161 0.772537 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 Rn 0.00001 0.001 0.0001 0.01 0.1 1 ON−PULSE WIDTH (s) Figure 23. IGBT Transient Thermal Impedance SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.622 50% Duty Cycle 20% 0.1 10% 5% Junction R1 R2 Rn C1 C2 Cn 2% 0.01 Single Pulse Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.001 0.000001 0.00001 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 24. Diode Transient Thermal Impedance www.onsemi.com 7 Case Ri (°C/W) Ci (J/°C) 0.007983 0.010584 0.011330 0.026752 0.047379 0.103276 0.061288 0.065591 0.134666 0.152791 0.000125 0.000945 0.002791 0.003738 0.006674 0.009683 0.051597 0.152460 0.234823 0.654488 0.1 1 NGTB50N60L2WG Figure 25. Test Circuit for Switching Characteristics www.onsemi.com 8 NGTB50N60L2WG Figure 26. Definition of Turn On Waveform www.onsemi.com 9 NGTB50N60L2WG Figure 27. Definition of Turn Off Waveform www.onsemi.com 10 NGTB50N60L2WG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M P A Q E2 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 E2/2 NOTE 4 B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 11 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGTB50N60L2W/D