CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2016.05.16 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE016N15E3 Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package Symbol BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A 150V 65A 16.6mΩ (typ) Outline TO-220 MTE016N15E3 G：Gate D：Drain S：Source G D S Ordering Information Device MTE016N15E3-0-UB-X Package Shipping TO-220 50 pcs/tube, 20 tubes/box, 4 boxes / carton (Pb-free lead plating package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE016N15E3 CYStek Product Specification Spec. No. : C434E3 Issued Date : 2016.05.16 Revised Date : Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=2mH, ID=30A, RG=25Ω (Note 2) Repetitive Avalanche Energy@ L=0.05mH Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) Operating Junction and Storage Temperature VDS VGS 150 ±30 65 46 260 30 900 21 214 107 -55~+175 ID IDM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C Note : 1. Pulse width limited by maximum junction temperature 2. 100% tested by conditions of L=2mH, IAS=18A, VGS=10V, VDD=25V Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 0.7 62 Unit °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss MTE016N15E3 Min. Typ. Max. Unit Test Conditions 150 2.0 - 0.1 36 16.6 4.0 ±100 1 25 22 V V/°C V S nA mΩ VGS=0V, ID=250μA Reference to 25°C, ID=1mA VDS = VGS, ID=250μA VDS =10V, ID=20A VGS=±30V VDS =120V, VGS =0V VDS =100V, VGS =0V, Tj=125°C VGS =10V, ID=20A - 76 21 23 33 31.4 67.6 20.2 4009 387 155 - nC ID=60A, VDS=75V, VGS=10V ns VDS=75V, ID=60A, VGS=10V, RG=2.5Ω pF VGS=0V, VDS=25V, f=1MHz μA CYStek Product Specification CYStech Electronics Corp. Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - 3.1 - 0.76 67.5 224 65 260 1.2 - Ω Spec. No. : C434E3 Issued Date : 2016.05.16 Revised Date : Page No. : 3/8 f=1MHz A V ns nC IS=12A, VGS=0V IF=50A, VGS=0V, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTE016N15E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2016.05.16 Revised Date : Page No. : 4/8 Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 BVDSS, Normalized Drain-Source Breakdown Voltage 100 ID, Drain Current(A) 10V,9V,8V,7V 80 6V 60 5.5 V 40 20 5V 1.2 1 0.8 VGS=4.5V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) ID=250μA, VGS=0V 0.6 -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=6V VGS=7V VGS=10V 10 1 Tj=25°C 0.8 0.6 0.4 Tj=150°C 0.2 0.1 1 10 ID, Drain Current(A) 0 100 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.8 R DS(ON) , Normalized Static DrainSource On-State Resistance 100 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 90 ID=20A 80 70 60 50 40 30 20 10 2.4 VGS=10V, ID=20A 2 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 16.6mΩ typ. 0 0 0 MTE016N15E3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C434E3 Issued Date : 2016.05.16 Revised Date : Page No. : 5/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss Crss 1.4 1.2 1 ID=1mA 0.8 0.6 ID=250μA 0.4 0.2 100 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 75 100 125 150 175 200 Gate Charge Characteristics 100 10 VDS=10V VDS=75V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 50 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 VDS=15V 1 0.1 Pulsed Ta=25°C 0.01 0.001 8 VDS=30V 6 VDS=120V 4 2 ID=20A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 20 40 60 80 Total Gate Charge---Qg(nC) 100 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 80 RDS(ON) Limited 100 ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 10 μs 100μs 1ms 10 TC=25°C, Tj=175°C, VGS=10V,RθJC=0.7°C/W single pulse 1 10ms 100ms DC 70 60 50 40 30 20 VGS=10V, RθJC=0.7°C/W 10 0 0.1 0.1 MTE016N15E3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification Spec. No. : C434E3 Issued Date : 2016.05.16 Revised Date : Page No. : 6/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 5000 100 4500 Peak Transient Power (W) VDS=10V ID, Drain Current (A) 80 60 40 20 TJ(MAX) =175°C TC=25°C RθJC=0.7°C/W 4000 3500 3000 2500 2000 1500 1000 500 0 0 2 4 6 8 10 0 0.0001 0.001 VGS, Gate-Source Voltage(V) 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=0.7 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTE016N15E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2016.05.16 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE016N15E3 CYStek Product Specification Spec. No. : C434E3 Issued Date : 2016.05.16 Revised Date : Page No. : 8/8 CYStech Electronics Corp. TO-220 Dimension Marking: E016 N15 Device Name Date Code □□□□ 1 3-Lead TO-220 Plastic Package CYStek Package Code: E3 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Millimeters Min. Max. 4.470 4.670 2.520 2.820 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.010 10.310 8.900 8.500 DIM A A1 b b1 c c1 D E Inches Min. Max. 0.176 0.184 0.099 0.111 0.028 0.036 0.046 0.054 0.012 0.021 0.046 0.054 0.406 0.394 0.350 0.335 DIM E1 e e1 F h L L1 Φ Millimeters Min. Max. 12.060 12.460 2.540* 4.980 5.180 2.890 2.590 0.000 0.300 13.400 13.800 3.560 3.960 3.735 3.935 Inches Min. Max. 0.475 0.491 0.100* 0.196 0.204 0.114 0.102 0.000 0.012 0.528 0.543 0.140 0.156 0.147 0.155 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE016N15E3 CYStek Product Specification