DMTH43M8LK3Q Green 40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 40V Features ID Max RDS(ON) Max TC = +25°C 3.6mΩ @ VGS = 10V 100A 5.2mΩ @ VGS = 5V 90A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Mechanical Data Power Management Functions DC-DC Converters Backlighting Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low RDS(ON) – Ensures On State Losses are Minimized Excellent Qgd x RDS(ON) Product (FOM) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: TO252 (DPAK) Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO252 (DPAK) Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMTH43M8LK3Q-13 Notes: Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information TH43M8L YYWW DMTH43M8LK3Q Document number: DS39337 Rev. 3 - 2 = Manufacturer’s Marking TH43M8L = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) 1 of 7 www.diodes.com April 2017 © Diodes Incorporated DMTH43M8LK3Q Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +100°C TC = +25°C TC = +100°C Continuous Drain Current, VGS = 10V (Note 6) Continuous Drain Current, VGS = 10V (Note 7) Value 40 ±20 17.6 12.5 ID A IDM IS ISM IAS EAS 100 80 150 70 150 13.2 87 A A A A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 3.1 47 88 1.7 -55 to +175 Unit W °C/W W °C/W °C ID Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=1mH Avalanche Energy, L=1mH Unit V V A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 32V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) RDS(ON) VSD 1 — — — — 2.9 4.3 — 2.5 3.6 5.2 1.2 V mΩ mΩ V VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 5V, ID = 15A VGS = 0V, IS = 20A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 2,693 1,172 52 2.54 38.5 17.6 6.9 6.9 5.2 5.7 23.5 11 35.4 32.9 — — — — — — — — — — — — — — pF VDS = 20V, VGS = 0V, f = 1MHz Ω nC VDS = 0V, VGS = 0V, f = 1MHz nC Test Condition VDS = 20V, ID = 20A ns VDD = 20V, VGS = 10V, ID = 20A, RG = 1.6Ω ns nC IF = 15A, di/dt = 100A/μs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMTH43M8LK3Q Document number: DS39337 Rev. 3 - 2 2 of 7 www.diodes.com April 2017 © Diodes Incorporated DMTH43M8LK3Q 100.0 30 25 ID, DRAIN CURRENT (A) VGS = 5.0V 80.0 ID, DRAIN CURRENT (A) VDS = 5.0V VGS = 4.5V 90.0 VGS = 10V 70.0 VGS = 4.0V 60.0 50.0 40.0 VGS = 3.5V 30.0 20.0 15 10 TJ = 175oC 5 TJ = 25oC TJ = 125oC 0.0 TJ = -55oC 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 5 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 6 5 VGS = 5.0V 4 3 VGS = 10V 2 18 ID = 20A 16 14 12 10 8 6 4 2 ID = 15A 0 1 0 20 40 60 80 2 100 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 10V TJ = 175oC TJ = RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) TJ = 85oC TJ = 150oC VGS = 3.0V VGS = 2.8V 10.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 20 150oC 5 4 TJ = 125oC 3 TJ = 85oC TJ = 25oC 2 TJ = -55oC 1 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2 1.8 VGS = 10V, ID = 20A 1.6 1.4 1.2 1 VGS = 5V, ID = 15A 0.8 0.6 0.4 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMTH43M8LK3Q Document number: DS39337 Rev. 3 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature April 2017 © Diodes Incorporated DMTH43M8LK3Q 3 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 8 7 VGS = 5V, ID = 15A 6 5 4 3 VGS = 10V, ID = 20A 2 1 2.5 2 ID = 1mA 1.5 ID = 250µA 1 0.5 0 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 7.On-Resistance Variation with Temperature -50 30 10000 f=1MHz VGS = 0V CT , JUNCTION CAPACITANCE (pF) 25 IS, SOURCE CURRENT (A) -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 20 15 TJ = 175oC TJ = 150oC TJ = 125oC 10 TJ = 85oC TJ = 25oC 5 TJ = -55oC Ciss 1000 Coss 100 Crss 0 0 10 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 40 RDS(ON) Limited 9 8 ID, DRAIN CURRENT (A) V GS GATE THRESHOLD VOLTAGE (V) 10 15 20 25 30 35 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 1000 10 7 VDS = 20V 6 I D = 20A 5 4 3 100 PW = 1s 1 PW = 100ms 10 PW = 10ms 1 2 0 5 PW = 1ms TJ(Max) = 175℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS = 10V PW = 100µs PW = 10µs PW = 1µs 0.1 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMTH43M8LK3Q Document number: DS39337 Rev. 3 - 2 40 4 of 7 www.diodes.com 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area April 2017 © Diodes Incorporated DMTH43M8LK3Q r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 0.01 D=0.02 D=0.01 RθJC (t) = r(t) * RθJC RθJC = 1.6℃/W Duty Cycle, D = t1/t2 D=0.005 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMTH43M8LK3Q Document number: DS39337 Rev. 3 - 2 5 of 7 www.diodes.com April 2017 © Diodes Incorporated DMTH43M8LK3Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) E A b3 7° ± 1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm A1 2.74REF Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 C Y X DMTH43M8LK3Q Document number: DS39337 Rev. 3 - 2 6 of 7 www.diodes.com April 2017 © Diodes Incorporated DMTH43M8LK3Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2017, Diodes Incorporated www.diodes.com DMTH43M8LK3Q Document number: DS39337 Rev. 3 - 2 7 of 7 www.diodes.com April 2017 © Diodes Incorporated