N-Channel MOSFET 600V, 7A, 1.15Ω General Description Features The MDP7N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP7N60 is suitable device for SMPS, high Speed switching and general purpose applications. VDS = 600V VDS = 660V ID = 7.0A RDS(ON) ≤ 1.15Ω @ Tjmax @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Symbol Rating Unit VDSS 600 V VDSS @ Tjmax 660 V VGSS ±30 V 7.0 A 4.4 A 28 A 131 W W/ oC o TC=25 C Continuous Drain Current (※) ID o TC=100 C Pulsed Drain Current(1) IDM o TC=25 C Power Dissipation o Derate above 25 C Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range PD 1.05 EAR 13.1 mJ Dv/dt 4.5 V/ns EAS 220 mJ TJ, Tstg -55~150 Symbol Rating RθJA 62.5 RθJC 0.95 o C ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Dec. 2014 Version 2.2 (1) Unit o C/W (1) 1 MagnaChip Semiconductor Ltd. MDP7N60 N-channel MOSFET 600V MDP7N60 Part Number Temp. Range Package Packing RoHS Status MDP7N60TH -55~150oC TO-220 Tube Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 600 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 - 5.0 IDSS VDS = 600V, VGS = 0V - - 1 μA IGSS VGS = ±30V, VDS = 0V - Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 3.5A gfs VDS = 30V, ID = 3.5A Forward Transconductance V - 100 nA 1.0 1.15 Ω - 8.5 - S - 17.8 - - 4.9 - Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 7.3 Input Capacitance Ciss - 750 VDS = 480V, ID = 7.0A, VGS = 10V(3) Reverse Transfer Capacitance Crss - 5 Output Capacitance Coss - 95 Turn-On Delay Time td(on) - 22 - 36 - 35 tf - 25 IS - 7.0 Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 300V, ID = 7.0A, RG = 25Ω(3) nC pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VSD IS = 7.0A, VGS = 0V trr - - A 1.4 V - 345 ns - 3.2 μC IF = 7.0A, dl/dt = 100A/μs(3) Qrr Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤7.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=8.2mH, IAS=7.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C Dec. 2014 Version 2.2 2 MagnaChip Semiconductor Ltd. MDP7N60 N-channel MOSFET 600V Ordering Information 3.0 14 Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V 12 ID,Drain Current [A] 11 10 2.5 RDS(ON) [Ω ] 13 9 8 7 6 2.0 VGS=10.0V VGS=20V 1.5 5 4 1.0 Notes 1. 250㎲ Pulse Test 2. TC=25℃ 3 2 0.5 1 5 10 15 20 0 5 10 VDS,Drain-Source Voltage [V] ID,Drain Current [A] 1.2 3.0 ※ Notes : BVDSS, (Normalized) Drain-Source Breakdown Voltage ※ Notes : RDS(ON), (Normalized) Drain-Source On-Resistance 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 2.5 15 1. VGS = 10 V 2. ID = 3.5A 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 1. VGS = 0 V 2. 250 s Pulse Test 1.1 1.0 0.9 0.8 -50 200 0 o IDR Reverse Drain Current [A] 150℃ ID(A) 200 ※ Notes : 10 10 25℃ -55℃ 1 0.1 6 8 1. VGS = 0 V 2.250s Pulse test 150℃ 25℃ 1 0.1 0.0 10 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Dec. 2014 Version 2.2 150 Fig.4 Breakdown Voltage Variation vs. Temperature * Notes ; 1. Vds=30V 4 100 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 2 50 o TJ, Junction Temperature [ C] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDP7N60 N-channel MOSFET 600V 15 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 120V 1400 VGS, Gate-Source Voltage [V] 300V 480V 1200 Capacitance [pF] 8 6 4 1000 Ciss 800 600 2 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 400 200 0 0 0 2 4 6 8 10 12 14 16 18 1 20 Fig.7 Gate Charge Characteristics 10 2 Fig.8 Capacitance Characteristics Operation in This Area is Limited by R DS(on) 10 10 s 100 s 1 8 1 ms 10 ms DC 10 10 ID, Drain Current [A] ID, Drain Current [A] 10 100 ms 0 -1 -2 10 -1 6 4 2 Single Pulse TJ=Max rated TC=25℃ 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 10 0 10 1 10 0 25 2 50 75 100 125 Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 16000 0 10 single Pulse RthJC = 0.95℃/W TC = 25℃ 14000 D=0.5 10000 0.2 -1 Power (W) Zθ JC(t), Thermal Response 12000 0.1 10 0.05 0.02 0.01 Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=0.95℃/W -5 -4 10 -3 10 -2 10 -1 10 0 10 0 1E-5 1 10 t1, Rectangular Pulse Duration [sec] 1E-4 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Dec. 2014 Version 2.2 6000 2000 -2 10 8000 4000 ※ Notes : single pulse 10 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 4 MagnaChip Semiconductor Ltd. MDP7N60 N-channel MOSFET 600V 1600 ※ Note : ID = 7A 10 MDP7N60 N-channel MOSFET 600V Physical Dimension 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified Dec. 2014 Version 2.2 5 MagnaChip Semiconductor Ltd. MDP7N60 N-channel MOSFET 600V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Dec. 2014 Version 2.2 6 MagnaChip Semiconductor Ltd.