ON NTMFS5C442NLTWFT1G Power mosfet Datasheet

NTMFS5C442NLT
Power MOSFET
40 V, 2.5 mW, 130 A, Single N−Channel
Features
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NTMFS5C442NLTWF − Wettable Flank Option for Enhanced
Optical Inspection
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(ON) MAX
2.5 mW @ 10 V
40 V
130 A
3.7 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
130
A
Parameter
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
95
PD
Steady
State
TA = 100°C
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
G (4)
W
83
S (1,2,3)
A
28
PD
3.7
W
IDM
900
A
TJ, Tstg
−55 to
+175
°C
IS
81
A
EAS
265
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
1.8
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
41
April, 2017 − Rev. 3
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
S
S
S
G
D
XXXXXX
AYWZZ
D
D
XXXXXX = 5C442L
XXXXXX = (NTMFS5C442NLT) or
XXXXXX = 442LWF
XXXXXX = (NTMFS5C442NLTWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
MARKING
DIAGRAM
1.8
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 10 A)
Parameter
N−CHANNEL MOSFET
20
TA = 100°C
TA = 25°C, tp = 10 ms
D (5)
42
ID
ID MAX
1
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Publication Order Number:
NTMFS5C442NLT/D
NTMFS5C442NLT
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
24.8
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−5.4
VGS = 10 V
ID = 50 A
2.0
2.5
VGS = 4.5 V
ID = 50 A
2.9
3.7
gFS
VDS = 15 V, ID = 50 A
V
mV/°C
116
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
3100
VGS = 0 V, f = 1 MHz, VDS = 25 V
1100
pF
37
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 32 V; ID = 50 A
23
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 32 V; ID = 50 A
50
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
5.0
nC
9.8
VGS = 4.5 V, VDS = 32 V; ID = 50 A
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
6.7
3.1
td(ON)
12
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 32 V,
ID = 50 A, RG = 1.0 W
tf
72
ns
28
8.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.85
TJ = 125°C
0.73
tRR
ta
tb
1.2
V
46
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
23
ns
23
40
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5C442NLT
TYPICAL CHARACTERISTICS
220
180
160
ID, DRAIN CURRENT (A)
3.8 V
3.6 V
140
3.4 V
120
3.2 V
100
80
3.0 V
60
2.8 V
40
140
120
100
80
TJ = 25°C
60
40
TJ = 125°C
20
20
0
0.5
1.0
2.0
1.5
2.5
0
3.0
1.5
2.0
2.5
3.0
3.5
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
Figure 1. On−Region Characteristics
4.5
4.0
3.5
3.0
2.5
2.0
3
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
4.0
5.0
TJ = 25°C
4.5
4.0
3.5
VGS = 4.5 V
3.0
2.5
VGS = 10 V
2.0
1.5
1.0
0
20
40
60
80
100
120 140 160 180 200
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
100,000
VGS = 10 V
ID = 50 A
IDSS, LEAKAGE (nA)
1.8
1.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 50 A
2
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5.0
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
TJ = −55°C
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
VDS = 3 V
160
200
ID, DRAIN CURRENT (A)
180
4.0 V
10 V to 4.5 V
1.6
1.4
1.2
1.0
TJ = 150°C
10,000
TJ = 125°C
1000
TJ = 85°C
100
0.8
0.6
−50 −25
10
0
25
50
75
100
125
150
175
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMFS5C442NLT
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
3600
CISS
C, CAPACITANCE (pF)
3200
2800
2400
VGS = 0 V
TJ = 25°C
f = 1 MHz
COSS
2000
1600
1200
800
400
CRSS
0
0
5
15
10
20
25
30
35
30
QT
25
8
20
6
15
QGD
QGS
4
10
VDS = 32 V
TJ = 25°C
ID = 50 A
2
5
0
0
0
40
4
8
12 16 20 24 28
32 36 40 44 48
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
1000
t, TIME (ns)
td(off)
100
IS, SOURCE CURRENT (A)
46
tf
tr
td(on)
10
VGS = 4.5 V
VDD = 32 V
ID = 50 A
TJ = 125°C
41
36
31
TJ = 25°C
26
21
16
TJ = −55°C
11
6
1
1
1
10
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
TC = 25°C
VGS ≤ 10 V
0.01 ms
0.1 ms
IPEAK (A)
IDS (A)
100
1 ms
dc
TJ(initial) = 25°C
10
TJ(initial) = 100°C
10
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
1
0.1
1
1
10
100
1E−04
1E−03
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
1E−02
NTMFS5C442NLT
100
RqJA(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
NTMFS5C442NLT 650 mm2, 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NTMFS5C442NLTT1G
5C442L
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5C442NLTWFT1G
442LWF
DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
NTMFS5C442NLTT3G
5C442L
DFN5
(Pb−Free)
5000 / Tape & Reel
NTMFS5C442NLTWFT3G
442LWF
DFN5
(Pb−Free, Wettable Flanks)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS5C442NLT
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
RECOMMENDED
SOLDERING FOOTPRINT*
0.10 C
SIDE VIEW
0.10
8X b
C A B
0.05
c
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.15
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DETAIL A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
2X
0.495
4.560
2X
1.530
e/2
e
L
1
4
3.200
4.530
K
E2
1.330
2X
PIN 5
(EXPOSED PAD)
L1
M
0.905
1
0.965
G
D2
BOTTOM VIEW
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS5C442NLT/D