DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS Features RDS(on) max ID Max Low On-Resistance TA = +25C N-Channel: 32mΩ @ 10V 46mΩ @ 4.5V (Notes 5 & 7) NEW PRODUCT Q1 Q2 P-Channel: 39mΩ @ 10V 6.1A Low Input Capacitance 39mΩ @ VGS = -10V -7A Fast Switching Speed 53mΩ @ VGS = -4.5V -5.6A Low Input/Output Leakage 30V -30V 32mΩ @ VGS = 10V 8.1A 46mΩ @ VGS = 4.5V 53mΩ @ 4.5V Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it Complementary Pair MOSFET Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data ideal for high efficiency power management applications. Applications Power Management Functions Analog Switch Load Switch Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 e3 Marking Information (See Page 2) Ordering Information Weight: 0.072 grams (approximate) SO-8 D2 Top View S2 D2 G2 D2 S1 D1 G1 D1 G2 G1 S2 Top View D1 N-Channel MOSFET S1 P-Channel MOSFET Ordering Information (Note 4) Part Number DMC3032LSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. DMC3032LSD Document number: DS32153 Rev. 2 - 2 1 of 9 www.diodes.com July 2014 © Diodes Incorporated DMC3032LSD Marking Information NEW PRODUCT 8 5 8 5 C3032LD C3032LD YY WW YY WW 1 4 Chengdu A/T Site 1 = Manufacturer’s Marking C3032LD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 4 Shanghai A/T Site Maximum Ratings N-CHANNEL – Q1 @TA = +25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 5) Value 30 ±20 8.1 5.1 25 Unit V V Unit V V IDM Value -30 ±20 -7.0 -4.5 -25 Symbol PD RθJA TJ, TSTG Value 2.5 50 -55 to +150 Unit W °C/W °C TA = +25°C TA = +85°C ID Pulsed Drain Current (Note 6) IDM A A Maximum Ratings P-CHANNEL – Q2 @TA = +25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 5) TA = +25°C TA = +85°C Pulsed Drain Current (Note 6) Thermal Characteristics A A @TA = +25°C unless otherwise specified Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Notes: ID 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. DMC3032LSD Document number: DS32153 Rev. 2 - 2 2 of 9 www.diodes.com July 2014 © Diodes Incorporated DMC3032LSD Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1 RDS (ON) - |Yfs| VSD - 2.1 32 46 1 V Static Drain-Source On-Resistance 1.45 23 32 7.6 0.7 VDS = VGS, IC = 250µA VGS = 10V, IC = 7A VGS = 4.5V, IC = 5.6A VDS = 5V, IC = 7A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 404.5 51.8 45.1 1.5 9.2 1.2 1.8 3.4 6.18 13.92 2.84 - Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Test Condition mΩ S V pF pF pF Ω nC nC nC ns ns ns ns VDS = 15V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 15V, ID = 5.8A VGS = 10V, VDS = 15V, RG = 3Ω, RL = 2.6Ω 20 20 VGS = 8.0V 16 ID, DRAIN CURRENT (A) 16 ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics N-CHANNEL – Q1 @TA = +25°C unless otherwise specified VGS = 4.5V 12 8 VGS = 3.0V 4 VDS = 5V 12 8 TA = 150°C TA = 125°C 4 TA = 85°C 0 VGS = 2.0V 0 1 VGS = 2.5V 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMC3032LSD Document number: DS32153 Rev. 2 - 2 5 0 T A = 25°C TA = -55°C 0 1 2 3 VGS, GATE SOURCE VOLTAGE (V) 4 Fig. 2 Typical Transfer Characteristics 3 of 9 www.diodes.com July 2014 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1 VGS = 2.5V 0.1 VGS = 4.5V VGS = 8.0V 0.01 0.1 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 1.3 1.1 VGS = 4.5V ID = 5.0A 0.9 VGS = 10V ID = 10A 0.7 0.08 VGS = 4.5V 0.5 -50 TA = 150°C 0.06 TA = 125°C T A = 85°C 0.04 TA = 25°C TA = -55°C 0.02 0 100 1.7 0 4 8 12 16 20 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.07 0.06 0.05 VGS = 4.5V ID = 5.0A 0.04 0.03 VGS = 10V ID = 10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 20 2.0 18 1.6 1.2 16 ID = 1mA IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMC3032LSD ID = 250µA 0.8 0.4 14 TA = 25°C 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMC3032LSD Document number: DS32153 Rev. 2 - 2 4 of 9 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 July 2014 © Diodes Incorporated DMC3032LSD IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 1,000 C, CAPACITANCE (pF) NEW PRODUCT f = 1MHz Ciss 100 Coss Crss 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance DMC3032LSD Document number: DS32153 Rev. 2 - 2 10,000 30 5 of 9 www.diodes.com 1,000 T A = 150°C TA = 125°C 100 10 TA = 85°C T A = 25°C 1 TA = -55°C 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage July 2014 © Diodes Incorporated DMC3032LSD @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1 ±100 V µA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1 RDS (ON) - |Yfs| VSD - -2.2 39 53 -1 V Static Drain-Source On-Resistance -1.7 30 42 7 -0.75 VDS = VGS, ID = -250µA VGS = -10V, ID = -4.3A VGS = -4.5V, ID = -3.7A VDS = -5V, ID = -4.3A VGS = 0V, IS = -1.7A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1002 125 118 13 10.1 21.1 2.8 3.2 10.1 6.5 50.1 22.2 - Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (4.5V) Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -15V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V/-10V, VDS = -15V, ID = -6A VGS = -10V, VDS = -15V, RG = 6Ω , ID = -1A 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 20 20 VGS = 10V VDS = 5V VGS = 4.5V VGS = 4.0V 15 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics P-CHANNEL VGS = 3.5V 10 VGS = 3.0V 5 15 10 5 TA = 150°C TA = 125°C TA = 85°C 0 VGS = 2.5V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Output Characteristics DMC3032LSD Document number: DS32153 Rev. 2 - 2 5 0 TA = 25°C TA = -55°C 0 1 2 3 4 5 VGS, GATE SOURCE VOLTAGE (V) 6 Fig. 12 Typical Transfer Characteristics 6 of 9 www.diodes.com July 2014 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.10 0.08 0.06 VGS = 4.5V 0.04 VGS = 10V 0.02 0 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Fig. 13 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 1.3 1.1 VGS = 10V ID = 10A 0.9 VGS = 4.5V ID = 5A 0.7 0.10 VGS = 10V 0.08 TA = 150°C 0.5 -50 T A = 85°C TA = 25°C 0.04 TA = -55°C 0.02 0 0 5 10 15 20 ID, DRAIN CURRENT (A) Fig. 14 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.08 0.07 0.06 VGS = 4.5V ID = 5A 0.05 0.04 0.03 VGS = 10V ID = 10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 16 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 15 On-Resistance Variation with Temperature 20 2.5 2.0 16 ID = 1mA IS, SOURCE CURRENT (A) 1.5 TA = 125°C 0.06 20 1.7 VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMC3032LSD ID = 250µA 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 17 Gate Threshold Variation vs. Ambient Temperature DMC3032LSD Document number: DS32153 Rev. 2 - 2 7 of 9 www.diodes.com T A = 25°C 12 8 4 0 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 18 Diode Forward Voltage vs. Current July 2014 © Diodes Incorporated DMC3032LSD IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 10,000 C, CAPACITANCE (pF) 1,000 Ciss Coss 100 10 Crss 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 19 Typical Capacitance 30 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Drain-Source Leakage Current vs. Drain-Source Voltage Package Outline Dimensions Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 0.254 NEW PRODUCT f = 1MHz 10,000 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SO-8 X C1 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMC3032LSD Document number: DS32153 Rev. 2 - 2 8 of 9 www.diodes.com July 2014 © Diodes Incorporated DMC3032LSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com DMC3032LSD Document number: DS32153 Rev. 2 - 2 9 of 9 www.diodes.com July 2014 © Diodes Incorporated