Single N-channel Trench MOSFET 80V, 100A, 3.6mΩ General Description Features The MDU1931 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1931 is suitable device for Synchronous Rectification For Server and general purpose applications. VDS = 80V ID = 100A @VGS = 10V RDS(ON) < 3.6mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D D D D D D D D D S S S G G S S S G PDFN56 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V o TC=25 C (Silicon Limited) 127.2 o TC=25 C (Package Limited) Continuous Drain Current (1) TC=100oC o ID (3) A 20.5 Pulsed Drain Current IDM TC=25oC 400.0 96.2 o TC=100 C o 80.5 (3) TA=25 C Power Dissipation 100.0 PD (3) 38.5 W (3) TA=25 C 2.5 Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range EAS 242 TJ, Tstg -55~150 Symbol Rating RθJA 50 RθJC 1.3 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Aug 2014. Rev. 1.1 1 Unit o C/W MagnaChip Semiconductor Ltd. MDU1931 – Single N-Channel Trench MOSFET 80V MDU1931 Part Number Temp. Range Package Packing RoHS Status MDU1931VRH -55~150oC PDFN56 Tape & Reel Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 80 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0 V Drain Cut-Off Current IDSS VDS = 64V, VGS = 0V - - 1.0 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 RDS(ON) VGS = 10V, ID =50A - 2.9 3.6 mΩ gfs VDS = 10V, ID =50A - 80.0 - S - 68.5 - - 18.2 - - 15.7 - - 4,630 - - 40 - Drain-Source ON Resistance Forward Transconductance μA Dynamic Characteristics Total Gate Charge Qg(10.0V) Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 40.0V, ID = 50.0A, VGS = 10V Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss - 1,050 - Turn-On Delay Time td(on) - 19.6 - tr - 41.0 - - 30.3 - - 18.9 - Rise Time Turn-Off Delay Time Fall Time td(off) VDS = 40.0V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 40.0V, ID = 50A , RG = 3.0Ω tf nC pF ns Rg f=1 MHz - 2.0 - Ω Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.80 1.2 V Body Diode Reverse Recovery Time trr - 60.0 - ns Body Diode Reverse Recovery Charge Qrr - 110.0 - nC Gate Resistance Drain-Source Body Diode Characteristics IF =50A, dl/dt = 100A/μs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited 2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 22.0A, VGS = 10V. 3. T < 10sec. Aug 2014. Rev. 1.1 2 MagnaChip Semiconductor Ltd. MDU1931 – Single N-Channel Trench MOSFET 80V Ordering Information Drain-Source On-Resistance [mΩ] 90 5.0V ID, Drain Current [A] 80 6.0V 70 60 VGS = 10V 50 40 4.0V 30 20 3.5 VGS = 10V 3.0 2.5 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 2.0 5.0 0 10 20 30 40 VDS, Drain-Source Voltage [V] 60 70 80 90 100 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 10 ※ Notes : ※ Notes : 9 RDS(ON) [mΩ ], Drain-Source On-Resistance 1. VGS = 10 V 2. ID = 50.0 A 1.6 RDS(ON), (Normalized) Drain-Source On-Resistance 50 ID, Drain Current [A] 1.4 1.2 1.0 ID = 50.0A 8 7 6 5 TA = 25 ℃ 4 3 2 0.8 1 0.6 -50 0 -25 0 25 50 75 100 125 4 150 5 6 Fig.3 On-Resistance Variation with Temperature 8 9 10 Fig.4 On-Resistance Variation with Gate to Source Voltage 90 100 ※ Notes : ※ Notes : 80 VGS = 0V IDR, Reverse Drain Current [A] VDS = 10V 70 ID, Drain Current [A] 7 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] 60 TA=25 50 ℃ 40 30 20 10 TA=25 ℃ 1 10 0 0 1 2 3 4 5 6 7 0.0 8 Fig.5 Transfer Characteristics Rev. 1.1 0.6 0.9 1.2 1.5 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Aug 2014. 0.3 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDU1931 – Single N-Channel Trench MOSFET 80V 4.0 100 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 50A VDS = 40V Ciss 5000 Capacitance [pF] VGS, Gate-Source Voltage [V] 8 6 4 2 4000 Coss 3000 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 2000 1000 Crss 0 0 0 10 20 30 40 50 60 0 70 5 10 Fig.7 Gate Charge Characteristics 10 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.8 Capacitance Characteristics 140 3 120 1 ms 2 Operation in This Area is Limited by R DS(on) 10 ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 1 100 ms 10 1s 10s DC 0 Single Pulse TJ=Max rated TC=25 100 80 60 40 20 ℃ 10 -1 10 -1 0 1 10 10 10 0 25 2 75 100 125 150 ℃ Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area Zθ JA(t), Thermal Response 50 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] 0 10 D=0.5 0.2 0.1 -1 10 0.05 0.02 -2 10 0.01 ※ Notes : Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC single pulse -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Aug 2014. Rev. 1.1 4 MagnaChip Semiconductor Ltd. MDU1931 – Single N-Channel Trench MOSFET 80V 6000 10 PDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified Dimension MILLIMETERS Min Max A 0.90 1.10 b 0.33 0.51 C 0.20 0.34 D1 4.50 5.10 D2 - 4.22 E 5.90 6.30 E1 5.50 6.10 E2 - 4.30 e Aug 2014. Rev. 1.1 5 1.27BSC H 0.41 0.71 K 0.20 - L 0.51 0.71 α 0° 12° MagnaChip Semiconductor Ltd. MDU1931 – Single N-Channel Trench MOSFET 80V Package Dimension MDU1931 – Single N-Channel Trench MOSFET 80V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Aug 2014. Rev. 1.1 6 MagnaChip Semiconductor Ltd.