MSDT75 Three Phase Bridge + Thyristor VRRM / VDRM IFAV / ITAV 800 to 1600V 75Amp Features y y Circuit y Blocking voltage:800 to 1600V Three Phase Bridge and a Thyristor Isolated Module package Applications y y y y Inverter for AC or DC motor control Current stabilized power supply Switching power supply UL E243882 approved Module Type TYPE VRRM /VDRM VRSM MSDT75-08 MSDT75-12 MSDT75-16 800V 1200V 1600V 900V 1300V 1700V ◆Diode Maximum Ratings Symbol Item Conditions Values Units ID Output Current(D.C.) Tc=101℃ Three phase full wave 75 A IFSM Surge forward current t=10mS Tvj =45℃ 920 A 4200 A2s 3000 V -40 to +150 -40 to +125 ℃ 2 it Circuit Fusing Consideration Visol Isolation Breakdown Voltage(R.M.S) Tvj Tstg Operating Junction Temperature Storage Temperature Mt Mounting Torque Ms To terminals(M5) 3±15% ℃ Nm To heatsink(M5) 3±15% Nm 210 g Module（Approximately） Weight Thermal Characteristics Symbol Item Thermal Impedance, max. Rth(j-c) Rth(c-s) a.c.50HZ;r.m.s.;1min Thermal Impedance, max. Values Units Junction to Case(TOTAL) Conditions 0.20 Case to Heatsink 0.10 ℃/W ℃/W Values Units Electrical Characteristics Symbol Item Conditions VFM Forward Voltage Drop, max. T=25℃ IF =100A 1.40 V IRRM Repetitive Peak Reverse Current, max. Tvj =25℃ VRD=VRRM Tvj =150℃ VRD=VRRM ≤0.5 ≤6 mA mA Document Number: MSDT75 Jan.15,2015 www.smsemi.com 1 MSDT75 ◆Thyristor Maximum Ratings Symbol Item Conditions Values Units Tc=99℃, Single Phase half wave 180o conduction 75 A TVJ=45℃ t=10ms (50Hz), sine VR=0 920 A 4200 A2s 3000 V Operating Junction Temperature -40 to +125 ℃ Storage Temperature Mounting Torque To terminals(M5) -40 to +125 3±15% ℃ Nm To heatsink(M5) 3±15% Nm ITAV Average On-State Current ITSM Surge On-State Current i2t Visol Tvj Tstg Mt Circuit Fusing Consideration Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1 min Ms di/dt Critical Rate of Rise of On-State Current TVJ=TVJM, VD=1/2VDRM ,IG =100mA diG/dt=0.1A/μs 150 A/μs dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM,VD=2/3VDRM,linear voltage rise 500 V/μs Electrical and Thermal Characteristics Symbol VTM IRRM/IDRM Item Peak On-State Voltage, max. Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. VTO Threshold voltage rT Slope resistance VGT IGT VGD IGD IL IH tgd tq Rth(j-c) Rth(c-s) Gate Trigger Voltage, max. Gate Trigger Current, max. Max. required DC gate voltage not to trigger Max. required DC gate current not to trigger Maximum latching current Maximum holding current Gate controlled delay time Circuit commutated turn-off time Thermal Impedance, max. Thermal Impedance, max. Document Number: MSDT75 Jan.15,2015 Conditions Values Min. Typ. Max. Units T=25℃ IT =300A 1.70 V TVJ=TVJM ,VR=VRRM ,VD=VDRM 20 mA 0.9 V 3.0 mΩ TVJ =25℃ , VD =6V 3 150 V mA TVJ =125℃ , VD =2/3VDRM 0.25 V TVJ =125℃ , VD =2/3VDRM 6 mA TVJ = TVJM TVJ =25℃ , VD =6V TVJ =25℃ , RG=33Ω 300 600 mA TVJ =25℃ , VD =6V TVJ=25℃,IG=1A,diG/dt=1A/us TVJ = TVJM Junction to Case 150 1 100 250 0.30 mA us us ℃/W 0.10 ℃/W Case to Heatsink www.smsemi.com 2 MSDT75 Performance Curves 250 100 Three phase W 200 80 150 60 100 40 50 20 Pvtot ID 0 0 ID 20 40 60 Three phase A 0 A 80 0 Tc Fig1. Power dissipation 50 100 150 ℃ Fig2. Forward Current Derating Curve 0.40 2000 ℃/ W A 50HZ Per one element Zth(j-C) 0.20 0 1000 0 0.001 t 0.01 0.1 1.0 10 S 100 Single phase half wave Tj=25℃ start 1 10 cycles 100 Fig4. Max Non-Repetitive Forward Surge Current Fig3. Transient thermal impedance 1000 100 max. W A 80 60 100 40 20 IF Tj=25℃ PTAV 10 0.5 VF 1.0 1.5 2.0 V 0 2.5 20 40 60 A 80 Fig6. SCR Power dissipation Fig5. Forward Characteristics Document Number: MSDT75 Jan.15,2015 0 ITAV www.smsemi.com 3 MSDT75 100 0.50 A ℃/ W Zth(j-C) 80 60 0.25 40 20 ITAVM 0 0 0 Tc 50 100 ℃ 150 0.1 1.0 10 S 100 Fig8. SCR Transient thermal impedance Fig7. SCR Forward Current Derating Curve 100 max. A V Pe ak Peak Forward Gate Voltage (10V) 10 Av er ag e 100 G at e Po w G er (3 W at e Po we r( 10 Peak Gate Current (3A) 1000 0.001 t 0.01 W ) ) 1 -10℃ 135℃ IT VG Tj=25℃ 10 0.5 VTM 1.0 1.5 2.0 V 0.1 2.5 Fig9. SCR Forward Characteristics Document Number: MSDT75 Jan.15,2015 25℃ 101 IG 102 Maximum Gate Non-Trigger Voltage 103 mA 104 Fig10. Gate trigger Characteristics www.smsemi.com 4 MSDT75 Package Outline Information CASE: M4 Dimensions in mm Document Number: MSDT75 Jan.15,2015 www.smsemi.com 5