MGCHIP MDU1516 Single n-channel trench mosfet 30v, 47.6a, 9.0m(ohm) Datasheet

Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ
General Description
Features



The MDU1516 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1516 is suitable device for DC/DC Converter
and general purpose applications.


D
D
D
D
D
D
D
D
S
S
S
G
G
S
S
S
VDS = 30V
ID = 47.6A @VGS = 10V
RDS(ON)
< 9.0 mΩ @VGS = 10V
< 14.0 mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
D
G
PowerDFN56
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Symbol
Rating
Unit
VDSS
30
V
±20
V
VGSS
TC=25oC
TC=70oC
Continuous Drain Current (1)
o
TA=25 C
47.6
38.0
ID
TA=70oC
Pulsed Drain Current
14.9(3)
IDM
o
TC=25 C
TC=70oC
Power Dissipation
o
TA=25 C
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
100
A
35.7
PD
TA=70oC
(2)
A
18.6(3)
22.8
W
5.5(3)
3.5(3)
EAS
53.0
TJ, Tstg
-55~150
Symbol
Rating
RθJA
22.7
RθJC
3.5
mJ
o
C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
(1)
Thermal Resistance, Junction-to-Case
Feb. 2014. Version 1.3
1
Unit
o
C/W
MagnaChip Semiconductor Ltd.
MDU1516 – Single N-Channel Trench MOSFET 30V
MDU1516
Part Number
Temp. Range
Package
Packing
Quantity
Rohs Status
MDU1516URH
-55~150oC
PowerDFN56
Tape & Reel
3000 units
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
30
-
-
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
1.3
1.9
2.7
-
-
1
-
-
5
-
-
±0.1
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
VDS = 30V, VGS = 0V
TJ=55oC
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 14A
Drain-Source ON Resistance
Forward Transconductance
-
7.8
9.0
-
11.3
13.0
VGS = 4.5V, ID = 11A
-
11.7
14.0
VDS = 5V, ID = 10A
-
31
-
11.0
14.6
18.3
5.2
6.9
8.6
-
3.0
-
-
2.6
-
662
882
1103
TJ=125oC
RDS(ON)
gfs
V
μA
mΩ
S
Dynamic Characteristics
Total Gate Charge
Qg(10V)
Total Gate Charge
Qg(4.5V)
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
VDS = 15.0V, ID = 14A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
nC
Reverse Transfer Capacitance
Crss
65
86
108
Output Capacitance
Coss
134
178
223
Turn-On Delay Time
td(on)
-
10.3
-
-
10.6
-
-
23.0
-
-
7.4
-
2.0
3.0
4.5
Ω
-
0.8
1.1
V
-
19.5
29.3
ns
-
11.0
16.5
nC
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
tr
td(off)
VGS = 10V, VDS = 15.0V,
ID = 14A , RG = 3.0Ω
tf
Rg
f=1 MHz
VSD
IS = 14A, VGS = 0V
pF
ns
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
IF = 14A, dl/dt = 100A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 18A, VDD = 27V, VGS = 10V
3. T < 10sec.
Feb. 2014. Version 1.3
2
MagnaChip Semiconductor Ltd.
MDU1516 – Single N-Channel Trench MOSFET 30V
Ordering Information
VGS = 10V
Drain-Source On-Resistance [mΩ]
4.0V
ID, Drain Current [A]
4.5V
5.0V
20
3.5V
10
3.0V
0
0.0
VGS = 4.5V
12
VGS = 10V
8
4
0
0.5
1.0
1.5
2.0
2.5
3.0
5
10
15
20
25
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
1.8
100
※ Notes :
※ Notes :
1. VGS = 10 V
2. ID = 16.0 A
1.6
ID = 14.0A
RDS(ON) [mΩ ],
Drain-Source On-Resistance
RDS(ON), (Normalized)
Drain-Source On-Resistance
30
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
1.4
1.2
1.0
0.8
0.6
-50
80
60
40
TA = 25℃
20
0
-25
0
25
50
75
100
125
2
150
3
4
5
6
7
8
9
10
VGS, Gate to Source Volatge [V]
o
TJ, Junction Temperature [ C]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
16
※ Notes :
※ Notes :
VGS = 0V
1
IDR, Reverse Drain Current [A]
ID, Drain Current [A]
VDS = 5V
12
8
TA=25℃
4
0
0
1
2
3
4
TA=25℃
0
10
-1
10
0.3
5
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD, Source-Drain voltage [V]
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
Feb. 2014. Version 1.3
10
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
MagnaChip Semiconductor Ltd.
MDU1516 – Single N-Channel Trench MOSFET 30V
16
30
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Note : ID = 14A
VDS = 15V
Ciss
8
VGS, Gate-Source Voltage [V]
MDU1516 – Single N-Channel Trench MOSFET 30V
10
Capacitance [pF]
900
6
4
600
※ Notes ;
Coss
300
1. VGS = 0 V
2. f = 1 MHz
2
Crss
0
0
0
4
8
12
16
0
5
10
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
60
2
10 ms
50
10
1s
1
ID, Drain Current [A]
ID, Drain Current [A]
100 ms
10s
DC
10
10
Operation in This Area
is Limited by R DS(on)
0
10
30
20
10
Single Pulse
TJ=Max rated
TC=25℃
-1
40
-1
10
0
10
1
10
0
25
2
50
150
10
ZJA(t), Thermal Response
ZJC(t), Thermal Response
125
1
1
10
0
10
D=0.5
0.2
-1
100
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.9 Maximum Safe Operating Area
10
75
TA, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
0.1
0.05
0.02
0.01
-2
10
? Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * ZJC * RJC(t) + TC
0
10
D=0.5
0.2
0.1
-1
10
0.05
0.02
0.01
-2
10
* Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * ZJA * RJA(t) + TA
single pulse
single pulse
-3
-3
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
t1, Rectangular Pulse Duration [sec]
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve (Junction-to-Case)
Feb. 2014. Version 1.3
-4
10
10
Fig.12 Transient Thermal Response
Curve (Junction-to-Ambient)
4
MagnaChip Semiconductor Ltd.
PowerDFN56 (5x6mm)
Dimensions are in millimeters, unless otherwise specified
Dimension
MILLIMETERS
Min
Max
A
0.90
1.10
b
0.33
0.51
C
0.20
0.34
D1
4.50
5.10
D2
-
4.22
E
5.90
6.30
E1
5.50
6.10
E2
-
4.30
e
Feb. 2014. Version 1.3
5
1.27BSC
H
0.41
0.71
K
0.20
-
L
0.51
0.71
α
0°
12°
MagnaChip Semiconductor Ltd.
MDU1516 – Single N-Channel Trench MOSFET 30V
Package Dimension
MDU1516 – Single N-Channel Trench MOSFET 30V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Feb. 2014. Version 1.3
6
MagnaChip Semiconductor Ltd.