CEL NE5500234-AZ 4.8 v n-channel silicon power mos fet power amplifier for dcs1800/pcs1900 handset Datasheet

SILICON POWER MOS FET
NE5500234
4.8 V N-CHANNEL SILICON POWER MOS FET
POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
DESCRIPTION
The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
for DCS1800 and PCS1900 handsets. Die are manufactured using our NEWMOS technology (our 0.6 m WSi gate
lateral MOS FET), housed in a surface mount 3-pin power Minimold (34 PKG) (SOT-89 type) package. The device
can deliver 32.5 dBm output power with 50% power added efficiency at 1.9 GHz with 4.8 V supply voltage.
FEATURES
• High output power
: Pout = 32.5 dBm TYP. (VDS = 4.8 V, IDset = 400 mA, f = 1.9 GHz, Pin = 25 dBm)
• High power added efficiency : add = 50% TYP. (VDS = 4.8 V, IDset = 400 mA, f = 1.9 GHz, Pin = 25 dBm)
• High linear gain
: GL = 11 dB TYP. (VDS = 4.8 V, IDset = 400 mA, f = 1.9 GHz)
• Surface mount package
: 3-pin power Minimold (34 PKG) (SOT-89 type)
• Single supply
: VDS = 3.0 to 6.0 V
APPLICATIONS
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• Digital cellular phones
: DCS1800/PCS1900 handsets
• Handheld transceiver
: FRS (Family Radio Service), GMRS (General Mobile Radio Service)
• Others
: General purpose amplifiers for various applications
ORDERING INFORMATION
Part Number
NE5500234
Order Number
NE5500234-AZ
Package
Marking
3-pin power minimold
V2
(SOT-89, Our code: 34)
Supplying Form
• Magazine case
• Qty 25 pcs/case
(Pb-Free : External
solder plating)
NE5500234-T1
NE5500234-T1-AZ
3-pin power minimold
(SOT-89, Our code: 34)
(Pb-Free : External
• 12 mm wide embossed taping
• Source pin face the perforation side of the tape
• Qty 1 kpcs/reel
solder plating)
Remarks 1. To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5500234-AZ
2. This product is containing Pb-material inside.
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10405EJ02V0DS (2nd edition)
Date Published August 2007 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NE5500234
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
20
V
Gate to Source Voltage
VGS
6.0
V
ID
1.0
A
Total Power Dissipation
Ptot
10
W
Channel Temperature
Tch
125
C
Storage Temperature
Tstg
65 to +125
C
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain Current
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Drain to Source Voltage
VDS
3.0
4.8
6.0
V
Gate to Source Voltage
VGS
0
2.0
3.5
V
Drain Current
ID
Duty Cycle  50%, Ton  1 s

0.75
1.0
A
Input Power
Pin
f = 1.9 GHz, VDS = 4.8 V


27
dBm
MIN.
TYP.
MAX.
Unit
ELECTRICAL CHARACTERISTICS
(T A = +25C, unless otherwise specified, using our standard test fixture.)
Parameter
Symbol
Test Conditions
Gate to Source Leakage Current
IGSO
VGS = 6.0 V


100
nA
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IDSS
VDS = 8.5 V


100
nA
Gate Threshold Voltage
Vth
VDS = 4.8 V, IDS = 1 mA
1.0
1.4
2.0
V
Thermal Resistance
Rth
Channel to Case

10

C/W
Transconductance
gm
VDS = 4.8 V, IDS = 500 mA

840

mS
IDSS = 10  A
20
24

V
31.5
32.5

dBm

610

mA
43
50

%

11.0

dB
Drain to Source Breakdown Voltage
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Note
BVDSS
Pout
ID
add
f = 1.9 GHz, VDS = 4.8 V,
Pin = 25 dBm,
IDset = 400 mA (RF OFF)
GL
Note Pin = 10 dBm
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
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Data Sheet PU10405EJ02V0DS
NE5500234
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TYPICAL CHARACTERISTICS (T A = +25C)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10405EJ02V0DS
3
NE5500234
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10405EJ02V0DS
NE5500234
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
Data Sheet PU10405EJ02V0DS
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NE5500234
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RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Wave Soldering
Partial Heating
Caution
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Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220C or higher
: 60 seconds or less
Preheating time at 120 to 180C
: 12030 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260C or below
Time at peak temperature
: 10 seconds or less
Preheating temperature (package surface temperature)
: 120C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Do not use different soldering methods together (except for partial heating).
Data Sheet PU10405EJ02V0DS
IR260
WS260
HS350