ASW214 5 ~ 8000 MHz MMIC Amplifier Features Description 19.5 dB Gain at 900 MHz The ASW214, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 8 GHz. The amplifier is available in a SOT89 package and passes through the stringent DC, RF, and reliability tests. 16 dBm P1dB at 900 MHz 30 dBm Output IP3 at 900 MHz 5.5 dB NF at 900 MHz MTTF > 100 Years Single Supply ASW214 Package Style: SOT89 Typical Performance (Supply Voltage = +5 V, TA = +25 C, Z0 = 50 ) Application Circuit Parameters Units Typical Frequency MHz 900 2000 3500 5800 Gain dB 19.5 18.0 15.0 12.5 IF S11 dB -12.5 -9.0 -9.0 -14.0 500 ~ 3500 MHz S22 dB -11 -14 -10 -14 Output IP31) dBm 30.0 32.0 28.0 24.5 Noise Figure dB 5.5 5.7 6.4 5.7 3300 ~ 3800 MHz Output P1dB dBm 16.0 17.0 14.5 13.5 4000 ~ 6000 MHz Current mA 52 52 52 52 Device Voltage V +4.8 +4.8 +4.8 +4.8 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 1700 ~ 2500 MHz 70 ~ 2700 MHz 500 ~ 2700 MHz (3.3 V/ 35 mA) Product Specifications Parameters Units Min Typ. Testing Frequency MHz Gain dB S11 dB S22 dB Output IP3 dBm Noise Figure dB Output P1dB dBm 15 16 Current mA 47 52 Device Voltage V Max 900 18.5 19.5 -12.5 -11 29 30 5.5 6.0 57 Pin Configuration +4.8 Absolute Maximum Ratings Parameters Rating Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operating Junction Temperature Pin No. Function 1 RF IN +150 C 2 GND Input RF Power (CW, 50 matched)* 25 dBm 3 RF OUT & Bias Thermal Resistance 194 C/W * Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/13 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW214 5 ~ 8000 MHz MMIC Amplifier Outline Drawing Part No. Lot No. Symbols A L b b1 C D D1 E E1 e1 H S e ASW214 Pxxxx Dimensions (In mm) MIN NOM 1.40 1.50 0.89 1.04 0.36 0.42 0.41 0.47 0.38 0.40 4.40 4.50 1.40 1.60 3.64 --2.40 2.50 2.90 3.00 0.35 0.40 0.65 0.75 1.40 1.50 Pin No. Function 1 RF IN 2 GND 3 RF OUT & Bias MAX 1.60 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 0.45 0.85 1.60 Mounting Recommendation (In mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 500 V~1000 V MM Class A Voltage Level: <200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260 C reflow 2/13 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW214 5 ~ 8000 MHz MMIC Amplifier APPLICATION CIRCUIT Frequency (MHz) 70 150 300 450 Magnitude S21 (dB) 20.0 20.0 20.0 19.5 Magnitude S11 (dB) -12 -13 -13 -13 Magnitude S22 (dB) -11 -11 -11 -11 IF Output P1dB (dBm) 16 16 16 16 70 ~ 450 MHz Output IP31) (dBm) 30 30 30 31 Noise Figure (dB) 5.3 5.5 6.0 5.5 Device Voltage (V) +4.8 +4.8 +4.8 +4.8 Current (mA) 52 52 52 52 +5 V 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V R1=2.7 D1=5.6V Zener Diode C4=1 F C3=100 pF L1=680 nH C1=1000 pF RF IN C2=1000 pF RF OUT ASW214 25 0 20 -5 15 -10 S11 (dB) Gain (dB) S-parameters & K-factor 10 5 0 -15 -20 100 200 300 400 500 -25 100 200 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 -25 400 500 3 2 1 100 200 300 400 500 0 0 500 Frequency (MHz) 3/13 300 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW214 5 ~ 8000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT Wide Band +5 V 900 1750 2000 2400 2700 3500 Magnitude S21 (dB) 19.7 19.5 18.2 17.8 17.0 16.4 15.0 Magnitude S11 (dB) -12.0 -12.5 -12.5 -12.0 -11.0 -10.0 -9.0 Magnitude S22 (dB) -11.0 -11.0 -11.0 -11.5 -11.5 -11.0 -10.0 Output P1dB (dBm) 16.0 16.0 16.0 16.0 16.0 16.0 14.5 Output IP3 (dBm) 30.0 30.0 30.0 30.0 30.5 30.5 28.0 Noise Figure (dB) 5.7 5.5 5.5 5.7 5.7 6.0 6.4 Device Voltage (V) +4.8 Current (mA) 52 1) 500 ~ 3500 MHz 500 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. Schematic Board Layout (FR4, 40x40 mm2, 0.8T) Vcc=5 V R1=2.7 D1=5.6V Zener Diode C4=1 F C3=100 pF L1=33 nH C1=100 pF RF IN C2=100 pF RF OUT ASW214 S-parameters & K-factor 25 0 o -40 c o 25 c o 85 c 20 o -40 c o 25 c o 85 c -5 S11 (dB) Gain (dB) 15 10 -10 -15 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 -20 0 500 1000 Frequency (MHz) 1500 2000 2500 3000 3500 4000 Frequency (MHz) 5 0 o -40 c o 25 c o 85 c 4 Stability Factor -5 S22 (dB) -10 -15 -20 -25 3 2 1 0 500 1000 1500 2000 2500 3000 3500 4000 0 0 500 Frequency (MHz) 4/13 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW214 5 ~ 8000 MHz MMIC Amplifier Gain vs. Temperature Current vs. Temperature 80 21 70 20 19 Gain (dB) Current (mA) 60 50 18 40 Frequency = 900 MHz 17 30 20 -60 -40 -20 0 20 40 60 80 16 -60 100 -40 -20 o 40 60 80 100 Output IP3 vs. Frequency 20 36 34 Output IP3 (dBm) 18 P1dB (dBm) 20 Temperature ( C) P1dB vs. Frequency 16 14 o -40 c o 25 c o 85 c 12 10 0 o Temperature ( C) 0 500 1000 1500 2000 2500 3000 3500 32 30 o -40 c o 25 c o 85 c 28 26 4000 24 0 500 Frequency (MHz) 1000 1500 2000 2500 3000 Frequency (MHz) Output IP3 vs. Tone Power (Frequency = 2000 MHz) 40 Output IP3 (dBm) 35 30 25 20 o -40 c o 25 c o 85 c 15 10 -6 -4 -2 0 2 4 6 8 10 12 Pout per Tone (dBm) 5/13 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW214 5 ~ 8000 MHz MMIC Amplifier LTE ACLR – 10 MHz & 20 MHz -40 ACLR (dBc) -45 -50 20 MHz BW -55 10 MHz BW -60 -65 -70 0 2 4 6 Output Power (dBm) 8 10 1) Test Source : LTE_FDD_test model 3.1, BW: 10 MHz & 20 MHz, Test Frequency: 2.6 GHz LTE ACLR – 20 MHz 2) Test Source : LTE_FDD_test model 3.1, BW: 20 MHz, Test Frequency: 2.6 GHz 6/13 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW214 5 ~ 8000 MHz MMIC Amplifier Performance with varying VDEVICE VDEVICE (V) +4.8 +4.65 +4.45 Current (mA) 54 44 36 Freq. (MHz) Gain (dB) S11 (dB) S22 (dB) OIP31) (dBm) P1dB (dBm) NF (dB) 900 19.6 -14.5 -13.0 31.0 16.4 5.13 2000 17.9 -12.2 -12.7 30.7 16.6 5.58 3500 15.0 -9.4 -11.5 29.5 15.8 -- 900 19.4 -15.2 -12.3 27.9 14.4 5.12 2000 17.7 -12.7 -12.3 28.0 15.4 5.40 3500 14.7 -9.5 -11.7 26.5 13.6 -- 900 18.9 -16.6 -11.2 24.4 12.4 5.00 2000 17.4 -13.4 -11.5 24.7 13.0 5.09 3500 14.6 -9.6 -10.4 25.2 13.5 -- 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 7/13 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW214 5 ~ 8000 MHz MMIC Amplifier APPLICATION CIRCUIT Wide Band Frequency (MHz) 1750 2000 2400 Magnitude S21 (dB) 18 18 17 Magnitude S11 (dB) -10 -9 -8 Magnitude S22 (dB) -15 -14 -11 Output P1dB (dBm) 17 17 17 Output IP3 (dBm) 32 32 32 Noise Figure (dB) 5.5 5.7 5.7 Device Voltage (V) +4.8 Current (mA) 52 1) 1700 ~ 2500 MHz +5 V 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. Schematic Board Layout (FR4, 40x40 mm2, 0.8T) Vcc=5 V R1=2.7 D1=5.6V Zener Diode C4=1 F C3=100 pF L1=10 nH C1=100 pF RF IN C2=100 pF RF OUT ASW214 25 5 20 0 15 -5 S11 (dB) Gain (dB) S-parameters & K-factor 10 5 0 1200 -10 -15 1400 1600 1800 2000 2200 2400 2600 2800 -20 1200 1400 1600 Frequency (MHz) 1800 2000 2200 2400 2600 2800 Frequency (MHz) 0 5 -5 4 Stability Factor S22 (dB) -10 -15 -20 2 1 -25 -30 1200 3 1400 1600 1800 2000 2200 2400 2600 2800 0 0 500 Frequency (MHz) 8/13 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW214 5 ~ 8000 MHz MMIC Amplifier APPLICATION CIRCUIT WiMAX 3300 ~ 3800 MHz +5 V Frequency (MHz) 3300 3800 Magnitude S21 (dB) 15.4 14.4 Magnitude S11 (dB) -10 -10 Magnitude S22 (dB) -10 -14 Output P1dB (dBm) 16 15 Output IP31) (dBm) 27.5 26.5 Noise Figure (dB) 6.4 6.5 Device Voltage (V) +4.8 +4.8 Current (mA) 52 52 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V R1=2.7 D1=5.6V Zener Diode C4=1 F C3=100 pF L1=39 nH C1=10 pF RF IN C2=10 pF RF OUT ASW214 S-parameters & K-factor 25 0 20 15 S11 (dB) Gain (dB) -5 10 -10 -15 5 0 3000 3200 3400 3600 3800 4000 -20 3000 3200 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 -25 3000 3600 3800 4000 3 2 1 3200 3400 3600 3800 4000 0 0 500 Frequency (MHz) 9/13 3400 Frequency (MHz) 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW214 5 ~ 8000 MHz MMIC Amplifier APPLICATION CIRCUIT C-Band 4000 ~ 6000 MHz +5 V Frequency (MHz) 4000 5000 5800 6000 Magnitude S21 (dB) 14.5 13.5 12.5 11.5 Magnitude S11 (dB) -11 -11 -14 -14 Magnitude S22 (dB) -9 -12 -14 -12 Output P1dB (dBm) 16.0 15.0 13.5 13.5 Output IP31) (dBm) 28.5 27.0 24.5 24.5 Noise Figure (dB) 5.6 5.5 5.7 6.0 Device Voltage (V) +4.8 +4.8 +4.8 +4.8 Current (mA) 52 52 52 52 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V R1=2.7 D1=5.6V Zener Diode C4=1 F C3=100 pF L1=10 nH C1=5 pF RF IN C2=5 pF RF OUT ASW214 20 0 15 -5 S11 (dB) Gain (dB) S-parameters & K-factor 10 5 0 3000 -10 -15 3500 4000 4500 5000 5500 6000 6500 -20 3000 7000 3500 4000 Frequency (MHz) -5 4 Stability Factor 5 S22 (dB) -10 -15 5500 6000 6500 7000 6000 7000 8000 3 2 1 -20 0 3500 4000 4500 5000 5500 6000 6500 7000 0 1000 2000 3000 4000 5000 Frequency (MHz) Frequency (MHz) 10/13 5000 Frequency (MHz) 0 -25 3000 4500 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW214 5 ~ 8000 MHz MMIC Amplifier APPLICATION CIRCUIT ONU Frequency (MHz) 70 900 1800 2700 Magnitude S21 (dB) 20.0 19.0 17.5 15.5 Magnitude S11 (dB) -13 -14 -15 -12 Magnitude S22 (dB) -11 -10 -9 -12 Output P1dB (dBm) 16 15 15 15 Output IP3 (dBm) 29.5 29.5 29.5 29.5 Output IP22) (dBm) 40 Noise Figure (dB) 5.4 5.3 5.5 5.8 Device Voltage (V) +4.8 +4.8 +4.8 +4.8 Current (mA) 52 52 52 52 1) 70 ~ 2700 MHz +5 V 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 2) OIP2 is measured with two tones (100MHz, 800MHz) at an output power of +0 dBm/tone, 700 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V R1=2.7 D1=5.6V Zener Diode C4=1 F C3=100 pF L1=680 nH C1=1000 pF RF IN C2=1000 pF RF OUT ASW214 S-parameters & K-factor 25 0 20 15 S11 (dB) Gain (dB) -5 10 -10 -15 5 0 0 500 1000 1500 2000 2500 3000 3500 -20 0 500 1000 Frequency (MHz) 1500 2000 2500 3000 3500 2500 3000 3500 Frequency (MHz) 5 0 4 Stability Factor S22 (dB) -5 -10 -15 -20 3 2 1 0 0 500 1000 1500 2000 2500 3000 3500 0 500 Frequency (MHz) 11/13 ASB Inc. [email protected] Tel: +82-42-528-7225 1000 1500 2000 Frequency (MHz) April 2017 ASW214 5 ~ 8000 MHz MMIC Amplifier APPLICATION CIRCUIT Wide Band 500 ~ 2700 MHz +3.3 V/ 35 mA Frequency (MHz) 900 2000 Magnitude S21 (dB) 18.0 16.3 Magnitude S11 (dB) -11 -13 Magnitude S22 (dB) -12 -10 Output P1dB (dBm) 12.3 12.5 Output IP31) (dBm) 24 24.5 Noise Figure (dB) 5.4 5.6 Device Voltage (V) +3.3 +3.3 Current (mA) 35 35 1) OIP3 is measured with two tones at an output power of -3 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vsupply=+3.3 V C4=1 F C3=100 pF R1=360 L1=33 nH C1=100 pF RF IN C2=100 pF RF OUT ASW214 S-parameters & K-factor 0 25 -5 15 S11 (dB) Gain (dB) 20 10 -10 -15 5 0 0 300 600 900 1200 1500 1800 2100 2400 2700 -20 0 300 600 900 Frequency (MHz) 1200 1500 1800 2100 2400 2700 Frequency (MHz) 5 0 4 Stability Factor S22 (dB) -5 -10 3 2 -15 1 -20 0 300 600 900 1200 1500 1800 2100 2400 2700 0 0 500 12/13 1000 1500 2000 2500 3000 3500 Frequency [MHz] Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW214 5 ~ 8000 MHz MMIC Amplifier Recommended Soldering Reflow Profile 260 C Ramp-up (3 C/sec) 20~40 sec Ramp-down (6 C/sec) 200 C 150 C 60~180 sec Copyright 2006-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 13/13 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017