Diodes DMN62D0LFD-7 Low on-resistance Datasheet

DMN62D0LFD
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ID
TA = +25°C
•
Low On-Resistance
•
Low Input Capacitance
310mA
•
Fast Switching Speed
295mA
•
Low Input/Output Leakage
•
ESD Protected
Description
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
•
Qualified to AEC-Q101 Standards for High Reliability
performance, making it ideal for high efficiency power management
Mechanical Data
V(BR)DSS
RDS(ON)
2Ω @ VGS = 4V
60V
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
Features and Benefits
2.5Ω @ VGS = 2.5V
applications.
•
Case: X1-DFN1212-3
Applications
•
•
DC-DC Converters
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Power management functions
•
•
Battery Operated Systems and Solid-State Relays
Terminals: NiPdAu over Copper leadframe. Solderable per MILSTD-202, Method 208 e4
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
•
Terminal Connections: See Diagram
Memories, Transistors, etc.
•
Weight: 0.005 grams (approximate)
•
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Drain
G pin
Body
Diode
S
Gate
D
G
ESD PROTECTED
Bottom View
Top View
Gate
Protection
Diode
Pin-Out Top View
Source
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN62D0LFD-7
DMN62D0LFD-13
Notes:
Compliance
Standard
Standard
Case
X1-DFN1212-3
X1-DFN1212-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K63 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2013)
M = Month (ex: 9 = September)
K63
YM
Date Code Key
Year
2007
Code
U
Month
Code
Jan
1
2008
V
Feb
2
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
2009
W
Mar
3
2010
X
Apr
4
2011
Y
May
5
2012
Z
Jun
6
2013
A
Jul
7
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Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
May 2014
© Diodes Incorporated
DMN62D0LFD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
ID
310
260
mA
IDM
1.0
A
Symbol
Max
Unit
PD
0.48
W
RθJA
265
°C/W
TJ, TSTG
-55 to +150
°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 5) VGS = 4.0V
Pulsed Drain Current (Note 6) (10µs pulse, duty cycle = 1%)
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
60
—
—
V
VGS = 0V, ID = 250μA
IDSS
—
—
1.0
μA
VDS = 60V, VGS = 0V
—
—
±100
nA
VGS = ±5V, VDS = 0V
—
—
±500
nA
VGS = ±10V, VDS = 0V
—
—
±2.0
μA
VGS = ±15V, VDS = 0V
0.6
—
1.0
V
VDS = VGS, ID = 250μA
—
1.3
2
—
1.4
2.5
—
1.8
3
—
2.4
—
1.8
—
S
VDS = 10V, ID = 200mA
0.8
1.3
V
VGS = 0V, IS = 115mA
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VGS = 4.5V, VDS = 10V,
ID = 250mA
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(th)
RDS(ON)
Forward Transfer Admittance
|Yfs|
—
Diode Forward Voltage
VSD
—
Input Capacitance
Ciss
—
31
—
Output Capacitance
Coss
—
4.3
—
Reverse Transfer Capacitance
Crss
—
3.0
—
VGS = 4V, ID = 100mA
Ω
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 50mA
VGS = 1.5V, ID = 10mA
DYNAMIC CHARACTERISTICS (Note 8)
Gate Resistance
Rg
—
99
—
Total Gate Charge
Qg
—
0.5
—
Gate-Source Charge
Qgs
—
0.09
—
Gate-Drain Charge
Qgd
—
0.07
—
Turn-On Delay Time
tD(on)
—
2.6
—
ns
Turn-On Rise Time
tr
—
2.1
—
ns
Turn-Off Delay Time
tD(off)
—
18
—
ns
tf
—
8.7
—
ns
Turn-Off Fall Time
Notes:
VGS = 10V, VDS = 30V,
RL = 150Ω, RG = 25Ω,
ID = 200mA
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
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DMN62D0LFD
0.5
0.5
VGS = 10V
VDS = 5.0V
0.4
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 4.0V
VGS = 3.5V
0.3
VGS = 3.0V
VGS = 2.5V
0.2
VGS = 2.0V
VGS = 1.5V
0.1
0.3
TA = 150°C
0.2
TA = 85°C
0.1
TA = 125°C
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
2.5
2.3
2.1
VGS = 2.5V
1.9
1.7
VGS = 4.5V
1.5
1.3
VGS = 10V
1.1
0.9
0.7
0.5
0
0.1
0.2
0.3
0.4
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.5
2.4
2.0
VGS = 4V
ID = 200mA
1.6
VGS = 2.5V
ID = 100mA
1.2
0.8
0.4
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
0
3.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.0
0
T A = 25°C
TA = -55°C
VGS = 1.2V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
0.4
VGS = 4.5V
0
0.5
1.0
1.5
2.0
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2.5
3.0
VGS = 4.5V
T A = 150°C
2.5
TA = 125°C
2.0
TA = 85°C
1.5
TA = 25°C
1.0
TA = -55°C
0.5
0
0
0.1
0.2
0.3
0.4
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.5
3.0
2.5
VGS = 2 .5V
ID = 100mA
2.0
VGS = 4 V
ID = 200mA
1.5
1.0
0.5
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
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0.4
IS, SOURCE CURRENT (A)
VGS(th), GATE THRESHOLD VOLTAGE (V)
0.5
1.0
ID = 1mA
0.8
ID = 250µA
0.6
0.4
-50
0.3
TA = 25°C
0.2
0.1
0
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
VGS GATE THRESHOLD VOLTAGE (V)
100
CT, JUNCTION CAPACITANCE (pF)
Ciss
10
Coss
Crss
f = 1MHz
1
0
10
20
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
1.2
8
4
2
0
40
VDS = 10V
ID = 250mA
6
0
0.2
0.4
0.6
0.8
1.0
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
1.2
D = 0. 9
D = 0. 7
D = 0. 5
D = 0. 3
0.1
D = 0.1
D = 0. 05
D = 0. 02
0.01
D = 0. 01
Rθ JA(t) = r(t) * Rθ JA
Rθ JA = 256°C/W
Duty Cycle, D = t1/ t2
D = 0. 005
D = Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
DMN62D0LFD
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
e
n
a
l
P
g
n
i
t
a
e
S
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
3
A
1
A
A
D e
L
1
b
E
2
E
2
D
1
L
b
U-DFN1212-3
Type C
Dim Min Max Typ
A
0.47 0.53 0.50
A1
0
0.05 0.02
A3
0.13
b
0.27 0.37 0.32
b1 0.17 0.27 0.22
D
1.15 1.25 1.20
D2 0.75 0.95 0.85
e
0.80
E
1.15 1.25 1.20
E2 0.40 0.60 0.50
L
0.25 0.35 0.30
L1 0.65 0.75 0.70
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
2
X
1
X
1
Y
U-DFN1212-3
Type C
Dimensions
Value
C
0.800
G
0.200
X
0.320
X1
0.520
X2
1.050
Y
0.450
Y1
0.250
Y2
0.850
All Dimensions in mm
2
Y
X
G
Y
C
DMN62D0LFD
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IMPORTANT NOTICE
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2014, Diodes Incorporated
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