Transistors SMD Type PNP Transistors BC808A (KC808A) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features High current gain. 1 Low collector-emitter saturation voltage. 0.55 High collector current. +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 For general AF applications. 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● Complementary NPN type available(BC818A) 1.Base 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base v oltage VCBO -30 V Collector-emitter v oltage VCEO -25 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -500 mA Peak collector current ICM -1 A IB -100 mA Total power dissipation Ptot 310 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Base current +0.1 0.38 -0.1 2.Emitter 3.collector Electrical Characteristics Ta = 25 Parameter Symbol Test conditions Min Typ Max Unit Collector to base breakdown voltage VCBO IC = -10 µ A, IE = 0 -30 V Collector to emitter breakdown voltage VCEO IC = -10 mA, IB = 0 -25 V Emitter to base breakdown voltage VEBO IE = -10 µ A, I C = 0 -5 V Collector cutoff current ICBO Emitter cutoff current IEBO VCB = -25 V, IE = 0 -100 nA VCB = -25 V, IE = 0 , TA = 150 -50 A -100 nA VEB = -4 V, IC = 0 BC808A-16 DC current gain * BC808A-25 hFE IC = -100 mA, VCE = -1 V BC808A-40 100 160 250 160 250 400 250 350 630 Collector saturation voltage * VCE(sat) IC = -500 mA, IB = -50 mA -0.7 V Base to emitter voltage * VBE(sat) IC = -500 mA, IB = -50 mA -1.2 V Collector-base capacitance CCb VCB = -10 V, f = 1 MHz 10 Emitter-base capacitance Ceb VEB = -0.5 V, f = 1 MHz 60 pF IC = -50 mA, VCE = -5 V, f = 100 MHz 200 MHz Transition frequency * Pulsed: PW fT 350 us, duty cycle ■ Classification of hfe pF 2% Type BC808A-16 BC808A-25 BC808A-40 Range 100-250 160-400 250-630 Marking 5E 5F 5G www.kexin.com.cn 1