DMN2023UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V(BR)SSS RSS(ON) Package 24V 26mΩ @ VGS = 4.5V X1-WLB1818-4 IS TA = +25°C 6.0A Built-in G-S Protection Diode Against ESD 2kV HBM Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) with thin WLCSP packaging process and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: X1-WLB1818-4 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Battery Management Load Switch Battery Protection X1-WLB1818-4 G1 G2 ESD PROTECTED TO 2kV S1 S2 N-Channel Top View N-Channel Equivalent Circuit Ordering Information (Note 4) Part Number DMN2023UCB4-7 Notes: Case X1-WLB1818-4 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information X1-WLB1818-4 8W = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: E = 2017) M or M = Month (ex: 9 = September) 8W YM Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN2023UCB4 Document number: DS35829 Rev. 11 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 9 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D May 2017 © Diodes Incorporated DMN2023UCB4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Source-Source Voltage Characteristic VSSS 24 V Gate-Source Voltage (Note 5) VGSS ±12 V IS 6.0 4.8 A ISM 20 A Symbol Value Unit PD 1.45 W RJA 88.21 °C/W TJ, TSTG -55 to +150 C Continuous Source Current @ TA = +25°C (Note 6) Steady State TA = +25°C TA = +70°C Pulsed Source Current @ TA = +25°C (Notes 6 & 7) Thermal Characteristics Characteristic Power Dissipation @ TA = +25°C (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Typ Source to Source Breakdown Voltage TJ = +25°C Max Unit Test Condition V(BR)SSS 24 — — V IS = 1mA, VGS = 0V, Test Circuit 1 Zero Gate Voltage Source Current TJ = +25°C ISSS — — 1.0 µA VSS = 20V, VGS = 0V, Test Circuit 1 Gate-Body Leakage IGSS — — 10 µA VGS = ±8V, VSS = 0V, Test Circuit 2 VGS(TH) 0.5 — 1.3 V VSS = 10V, IS = 1.0mA, Test Circuit 3 17 21.5 25.5 VGS = 6.5V, IS = 3.0A, Test Circuit 5 17.5 22 26 VGS = 4.5V, IS = 3.0A, Test Circuit 5 18.5 23 27 19 23.5 29 19.5 24 33 VGS = 3.1V, IS = 3.0A, Test Circuit 5 21.5 27 40 VGS = 2.5V, IS = 3.0A, Test Circuit 5 S VSS = 10V, IS = 3.0A, Test Circuit 4 V IF = 3.0A, VGS = 0V, Test Circuit 6 pF VSS = 10V, VGS = 0V, f = 1.0MHz Test Circuit 7 VGS = 4.5V, VSS = 10V, IS = 6A Test Circuit 9 ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Source-Source On-Resistance RSS(ON) mΩ Forward Transfer Admittance |Yfs| — 12 — Body Diode Forward Voltage VF(S-S) — 0.7 1 Input Capacitance Ciss — 2564 3333 Output Capacitance Coss — 197 275 Reverse Transfer Capacitance Crss — 183 260 Total Gate Charge Qg — 29 37 nC Turn-On Delay Time tD(ON) — 10 15 ns Turn-On Rise Time tR — 20 — ns Turn-Off Delay Time tD(OFF) — 75 110 ns tF — 29 — ns VGS = 4.0V, IS = 3.0A, Test Circuit 5 VGS = 3.7V, IS = 3.0A, Test Circuit 5 DYNAMIC CHARACTERISTICS (Note 9) Turn-Off Fall Time Notes: VSS = 10V, RL = 3.33Ω, IS = 3.0A Test Circuit 8 5. AEC-Q101 VGS maximum is ±9.6V. 6. Device mounted on FR-4 material with 1-inch2 (6.45-cm2), 2-oz.(0.071-mm thick) Cu. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMN2023UCB4 Document number: DS35829 Rev. 11 - 2 2 of 9 www.diodes.com May 2017 © Diodes Incorporated DMN2023UCB4 10.0 10 VGS = 4.5V )A ( T N E R R U C N IA R D ,D I VSS = 5.0V 9 VGS = 4.0V 8.0 VGS = 2.5V IS, SOURCE CURRENT (A) IS, SOURCE CURRENT (A) 9.0 VGS = 1.5V VGS = 2.0V )A ( T N E R R U C N I A R D ,D I 7.0 6.0 5.0 4.0 3.0 VGS = 1.2V 2.0 8 7 6 5 4 TA = 150°C 3 TA = 125°C TA = 85°C 2 TA = 25°C 1.0 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D ,N ) 0 0.4 0.8 1.2 1.6 VSS , SOURCE-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristics 0 2 0.05 0.04 0.03 VGS = 3.7V VGS = 3.1V V GS = 2.5V 0.02 V GS = 4.5V VGS = 4.0V 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VGS , GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristics 2 VGS = 4.5V TA = 150°C TA = 125°C T A = 85°C TA = 25°C TA = -55°C O (S D O (S D R TA = -55°C 0.04 ) ( E C N A T S IS E 0.03 R -N O E C R U O S -N 0.02 IA R D , )N RSS(ON), SOURCE-SOURCE ON-RESISTANCE () RSS(ON), SOURCE-SOURCE ON-RESISTANCE () 0.0 1 VGS = 1.0V R 0 0 1 2 3 4 5 IS , SOURCE-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Source Current and Gate Voltage RSS(ON), SOURCE-SOURCE ON-RESISTANCE (NORMALIZED) 0 RSS(ON), SOURCE-SOURCE ON-RESISTANCE () 2 )D E 1.5 E Z C IL R A U M O R S O - N N I (E 1 A R C D N , )N A T OS (S IS DE R R 0.5 N O 0.01 6 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D ,N ) V GS = 4.5V IS = 3A 1 2 3 4 5 6 7 8 9 IS , SOURCE CURRENT (A) Figure 4. Typical On-Resistance vs. Source Current and Temperature 10 0.04 0.03 0.02 VGS = 4.5V IS = 3A 0.01 O ( S D R 0 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Figure 5. On-Resistance Variation with Temperature DMN2023UCB4 Document number: DS35829 Rev. 11 - 2 3 of 9 www.diodes.com 0 TJ , JUNCTION TEMPERATURE (C) Figure 6. On-Resistance Variation with Temperature May 2017 © Diodes Incorporated DMN2023UCB4 10 )V ( E G A T 0.8 L O V D L O H S 0.6 E R H T E T A G 0.4 , h) 9 )A ( T N E R R U C E C R U O S ,S I IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1 IS = 1mA IS = 250µA t( S G V 6 5 4 TA = 150°C 3 TA = 25°C TA = 125°C 2 0 10000 IGSS, GATE-SOURCE LEAKAGE CURRENT (nA) ISSS, SOURCE LEAKAGE CURRENT (nA) )A n 1000 ( T N E R R U 100 C E G A K A 10 E L N IA R D 1 ,S TA = 125°C TA = 85°C TA = 25°C S D 0.1 I 0.1 1 3 6 9 12 15 18 21 24 VSS , SOURCE-SOURCE VOLTAGE (V) Figure 9. Typical Source-Source Leakage Current vs. Voltage 0.03 0.027 VGS = 6.5V 0.024 0.021 0.018 0.015 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 , DRAIN-SOURCE CURRENT ISI,DSOURCE-SOURCE CURRENT (A) Figure Typical On-Resistance vs. vs. Figure1111. Typical On-Resistance Drain Current andand Gate Voltage Source Current Gate Voltage DMN2023UCB4 Document number: DS35829 Rev. 11 - 2 5 TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C S G RRSS(ON), SOURCE-SOURCE ON-RESISTANCE () DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 0 )A 10000 n ( T N E R 1000 R U C E G 100 A K A E L E C 10 R U O S -E T 1 A G ,S TA = 150°C TA = -55°C TA = 85°C 0.3 0.6 0.9 1.2 1.5 V , SOURCE-SOURCE VOLTAGE (V) FSS VFSS, FORWARD SOURCE-SOURCE VOLTAGE (V) Figure 8. Diode Forward Voltage vs. Current -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7. Gate Threshold Variation vs. Junction Temperature RR ON-RESISTANCE () SS(ON), SOURCE-SOURCE DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 7 1 0.2 -50 I 8 2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 10. Typical Gate-Source Leakage Current vs. Gate-Source Voltage 0.035 0.033 0.031 0.029 0.027 IIDS == 3.0A 3.0A 0.025 0.023 0.021 0.019 0.017 0.015 1 4 of 9 www.diodes.com 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 12 Typical Transfer Characteristic 8 May 2017 © Diodes Incorporated DMN2023UCB4 100 R SSON) Limited IS, SOURCE CURRENT (A) P W = 10µs )A 10 ( T N E R DC R U P C W = 10s 1 N PW = 1s I A R P W = 100ms D ,D T = 150° C J(max) I P W = 10ms 0.1 TA = 25°C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.01 PW = 1ms PW = 100µs 0.1 1 10 100 VSS , SOURCE-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area DMN2023UCB4 Document number: DS35829 Rev. 11 - 2 5 of 9 www.diodes.com May 2017 © Diodes Incorporated DMN2023UCB4 Test Circuits S2 S2 G2 G2 A G1 A VSS VGS G1 S1 S1 Test Circuit 1 ISSS Test Circuit 2 IGSS When FET1 is measured, between GATE and SOURCE of FET2 are shorted. S2 S2 G2 G2 A A G1 G1 VSS VSS VGS VGS S1 S1 Test Circuit 3 VGS(OFF) When FET1 is measured, between GATE and SOURCE of FET2 are shorted. Test Circuit 4 │Yfs│ ∆IS/∆VGS S2 S2 4.5V G2 IF G2 IS VSS G1 VSS V V G1 VGS VGS = 0V S1 S1 Test Circuit 5 RSS(ON) VSS/IS DMN2023UCB4 Document number: DS35829 Rev. 11 - 2 Test Circuit 6 VF(S-S) When FET1 is measured, FET2 is added VGS +4.5V. 6 of 9 www.diodes.com May 2017 © Diodes Incorporated DMN2023UCB4 Test Circuits (Cont.) Ciss Coss Crss S2 S2 VSS S2 VSS G2 VSS G2 Capacitance Bridge G1 G1 Capacitance Bridge G2 G1 Capacitance Bridge S1 S1 S1 Test Circuit 7 S2 VGS Wave Form G2 V RL VGS 0 VSS VSS VGS 0 90% RG tD(ON) t VDD S1 90% 10% 10% VSS Wave Form G1 PG 90% VGS 10% tR tD(OFF) t(ON) tF t(OFF) t = 1μs Duty Cycle ≤1% Test Circuit 8 tD(ON), tR, tD(OFF), tF S2 A G2 RL IG = 2mA G1 PG VDD 50Ω S1 Test Circuit 9 QG DMN2023UCB4 Document number: DS35829 Rev. 11 - 2 7 of 9 www.diodes.com May 2017 © Diodes Incorporated DMN2023UCB4 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X1-WLB1818-4 D e B Ø b (4x) X1-WLB1818-4 Dim Min Max Typ A 0.3420 0.4080 0.3750 A1 0.1350 0.1650 0.1500 A2 0.1850 0.2150 0.2000 A3 0.0220 0.0280 0.0250 b 0.2700 0.3300 0.3000 D 1.7800 1.8000 1.7900 E 1.7800 1.8000 1.7900 e 0.650 BSC All Dimensions in mm B e E A A PIN#1 1 2 2 1 A3(Backside Coating) A2 A Seating Plane A1 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1-WLB1818-4 D (4x) 1 C 2 Dimensions A C D C B DMN2023UCB4 Document number: DS35829 Rev. 11 - 2 8 of 9 www.diodes.com Value (in mm) 0.65 0.30 May 2017 © Diodes Incorporated DMN2023UCB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMN2023UCB4 Document number: DS35829 Rev. 11 - 2 9 of 9 www.diodes.com May 2017 © Diodes Incorporated