Spec. No. : C055S6R Issued Date : 2017.12.26 Revised Date : Page No. : 1/ 9 CYStech Electronics Corp. N-CHANNEL MOSFET (dual transistors) MTDK8S6R Features • ESD protected gate, ≥2kV (HBM) • High speed switching • Easily designed drive circuits • Easy to use in parallel • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTDK8S6R SOT-363R S2 G2 D1 Tr1 Tr2 D2 Pin #1 G1 S1 Ordering Information Device MTDK8S6R-0-T1-G Package SOT-363 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTDK8S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C055S6R Issued Date : 2017.12.26 Revised Date : Page No. : 2/ 9 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C (Note 3) Continuous Drain Current @VGS=10V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Power Dissipation (Note 3) ESD susceptibility Operating Junction Temperature Range Storage Temperature Range (Note 4) Symbol Limits VDSS 30 ±20 480 384 1900 300 2000 -55~+150 -55~+150 VGSS ID IDM PD VESD Tj Tstg Unit V mA mW V °C Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient, max (Note 3) Thermal Resistance, Junction-to-Case Symbol Limit RθJA 417 RθJC 150 Unit °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on copper pad of FR-4 board with minimum footprint, 2 oz. copper. 4. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 30 ∆BVDSS/∆Tj 25 VGS(th) 0.7 1.6 IGSS ±10 1 IDSS 10 0.38 0.8 RDS(ON)* 0.44 1.3 GFS 100 370 Ciss 28 Coss 14 Crss 4.2 td(ON) 3 tr 15.4 td(OFF) 10 tf 12 Qg 1.7 Qgs 0.6 Qgd 0.6 MTDK8S6R Unit Test Conditions V VGS=0V, ID=10μA mV/°C Reference to 25°C, ID=250μA V VDS=VGS, ID=250μA VGS=±16V, VDS=0V μA VDS=24V, VGS=0V VDS=24V, VGS=0V (Tj=70°C) ID=500mA, VGS=10V Ω ID=200mA, VGS=4.5V mS VDS=5V, ID=100mA pF VDS=15V, VGS=0V, f=1MHz ns VDS=15V, ID=0.5A, VGS=10V, RG=1Ω nC VDS=15V, ID=1A, VGS=10V CYStek Product Specification CYStech Electronics Corp. Source-Drain Diode IS ISM *VSD *trr *Qrr - 0.78 4.8 1.1 0.48 1.9 1.2 - Spec. No. : C055S6R Issued Date : 2017.12.26 Revised Date : Page No. : 3/ 9 A V ns nC VGS=0V, IS=0.1A IF=0.5A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint MTDK8S6R CYStek Product Specification Spec. No. : C055S6R Issued Date : 2017.12.26 Revised Date : Page No. : 4/ 9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 ID, Drain Current(A) 1.6 BVDSS, Normalized Drain-Source Breakdown Voltage 1.8 10V, 9V, 8V, 7V, 6V,5V,4V 1.4 3V 1.2 1.0 0.8 2.5V 0.6 0.4 ID=250μA, VGS=0V 1.2 1 0.8 VGS=2 V 0.2 0.6 0.0 0 1 2 3 4 -75 -50 -25 5 VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1 VSD, Source-Drain Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(Ω) 1.2 VGS=4.5V VGS=10V 0.8 Tj=150°C 0.6 0.4 0.01 0.1 ID, Drain Current(A) 0 1 0.2 0.4 0.6 0.8 IDR , Reverse Drain Current(A) 1 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2 R DS(ON) , Normalized Static DrainSource On-State Resistance 2 1.8 1.6 1.4 1.2 ID=100mA, 200mA, 500mA 1 0.8 0.6 0.4 0.2 1.8 VGS=10V, ID=500mA 1.6 1.4 1.2 1 0.8 0.6 0.4 0 0 MTDK8S6R Tj=25°C 1 0.2 0.1 0.001 R DS(ON) , Static Drain-Source OnState Resistance(Ω) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C055S6R Issued Date : 2017.12.26 Revised Date : Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 100 Capacitance---(pF) Ciss 10 C oss Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 1 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 50 75 100 125 150 175 Maximum Drain Current vs JunctionTemperature 10 1 -ID, Maximum Drain Current(A) 0.5 100μs 1ms 0.1 10ms 100ms TA=25°C, Tj=150°C, VGS=10V, RθJA=417°C/W Single Pulse 0.01 DC 0.001 0.4 0.3 0.2 0.1 TA=25°C, VGS=10V, RθJA=417°C/W 0 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 Forward Transfer Admittance vs Drain Current 75 100 125 Tj, Junction Temperature(°C) 150 175 Gate Charge Characteristics 1 10 VDS=5V -VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Maximum Safe Operating Area ID, Drain Current (A) 0 VDS=10V 0.1 Ta=25°C Pulsed 0.01 0.001 MTDK8S6R 8 6 4 VDS=15V ID=1A 2 0 0.01 0.1 ID, Drain Current(A) 1 0 0.4 0.8 1.2 1.6 Qg, Total Gate Charge(nC) 2 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C055S6R Issued Date : 2017.12.26 Revised Date : Page No. : 6/ 9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) Typical Transfer Characteristics 10 1.8 VDS=10V 1.6 ID, Drain Current(A) TJ(MAX) =150°C TA=25°C RθJA=417°C/W 8 1.4 Power (W) 1.2 1.0 0.8 6 4 0.6 0.4 2 0.2 0.0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 0 0.001 0.01 0.1 1 Pulse Width(s) 10 1.E+02 1.E+03 100 Transient Thermal Response Curves 1 r(t), Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA (t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA =417 °C/W 0.05 0.02 0.01 0.01 0.001 1.E-04 Single Pulse 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTDK8S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C055S6R Issued Date : 2017.12.26 Revised Date : Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension MTDK8S6R CYStek Product Specification CYStech Electronics Corp. MTDK8S6R Spec. No. : C055S6R Issued Date : 2017.12.26 Revised Date : Page No. : 8/ 9 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C055S6R Issued Date : 2017.12.26 Revised Date : Page No. : 9/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTDK8S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C055S6R Issued Date : 2017.12.26 Revised Date : Page No. : 10/ 9 SOT-363 Dimension K8 XX Marking: Date Code Device Code 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1) Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 DIM A A1 A2 b c D E Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 DIM E1 e e1 L L1 θ Millimeters Min. Max. 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Inches Min. Max. 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTDK8S6R CYStek Product Specification