CYSTEKEC MTDK8S6R N-channel mosfet Datasheet

Spec. No. : C055S6R
Issued Date : 2017.12.26
Revised Date :
Page No. : 1/ 9
CYStech Electronics Corp.
N-CHANNEL MOSFET (dual transistors)
MTDK8S6R
Features
• ESD protected gate, ≥2kV (HBM)
• High speed switching
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTDK8S6R
SOT-363R
S2
G2
D1
Tr1
Tr2
D2
Pin #1
G1
S1
Ordering Information
Device
MTDK8S6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTDK8S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C055S6R
Issued Date : 2017.12.26
Revised Date :
Page No. : 2/ 9
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C (Note 3)
Continuous Drain Current @VGS=10V, TA=70°C (Note 3)
Pulsed Drain Current
(Notes 1, 2)
Power Dissipation
(Note 3)
ESD susceptibility
Operating Junction Temperature Range
Storage Temperature Range
(Note 4)
Symbol
Limits
VDSS
30
±20
480
384
1900
300
2000
-55~+150
-55~+150
VGSS
ID
IDM
PD
VESD
Tj
Tstg
Unit
V
mA
mW
V
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max
(Note 3)
Thermal Resistance, Junction-to-Case
Symbol
Limit
RθJA
417
RθJC
150
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on copper pad of FR-4 board with minimum footprint, 2 oz. copper.
4. Human body model, 1.5kΩ in series with 100pF
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVDSS*
30
∆BVDSS/∆Tj
25
VGS(th)
0.7
1.6
IGSS
±10
1
IDSS
10
0.38
0.8
RDS(ON)*
0.44
1.3
GFS
100
370
Ciss
28
Coss
14
Crss
4.2
td(ON)
3
tr
15.4
td(OFF)
10
tf
12
Qg
1.7
Qgs
0.6
Qgd
0.6
MTDK8S6R
Unit
Test Conditions
V
VGS=0V, ID=10μA
mV/°C Reference to 25°C, ID=250μA
V
VDS=VGS, ID=250μA
VGS=±16V, VDS=0V
μA
VDS=24V, VGS=0V
VDS=24V, VGS=0V (Tj=70°C)
ID=500mA, VGS=10V
Ω
ID=200mA, VGS=4.5V
mS
VDS=5V, ID=100mA
pF
VDS=15V, VGS=0V, f=1MHz
ns
VDS=15V, ID=0.5A, VGS=10V, RG=1Ω
nC
VDS=15V, ID=1A, VGS=10V
CYStek Product Specification
CYStech Electronics Corp.
Source-Drain Diode
IS
ISM
*VSD
*trr
*Qrr
-
0.78
4.8
1.1
0.48
1.9
1.2
-
Spec. No. : C055S6R
Issued Date : 2017.12.26
Revised Date :
Page No. : 3/ 9
A
V
ns
nC
VGS=0V, IS=0.1A
IF=0.5A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
MTDK8S6R
CYStek Product Specification
Spec. No. : C055S6R
Issued Date : 2017.12.26
Revised Date :
Page No. : 4/ 9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
ID, Drain Current(A)
1.6
BVDSS, Normalized Drain-Source
Breakdown Voltage
1.8
10V, 9V, 8V, 7V, 6V,5V,4V
1.4
3V
1.2
1.0
0.8
2.5V
0.6
0.4
ID=250μA,
VGS=0V
1.2
1
0.8
VGS=2 V
0.2
0.6
0.0
0
1
2
3
4
-75 -50 -25
5
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1
VSD, Source-Drain Voltage(V)
RDS(ON), Static Drain-Source On-State
Resistance(Ω)
1.2
VGS=4.5V
VGS=10V
0.8
Tj=150°C
0.6
0.4
0.01
0.1
ID, Drain Current(A)
0
1
0.2
0.4
0.6
0.8
IDR , Reverse Drain Current(A)
1
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
R DS(ON) , Normalized Static DrainSource On-State Resistance
2
1.8
1.6
1.4
1.2
ID=100mA, 200mA, 500mA
1
0.8
0.6
0.4
0.2
1.8
VGS=10V, ID=500mA
1.6
1.4
1.2
1
0.8
0.6
0.4
0
0
MTDK8S6R
Tj=25°C
1
0.2
0.1
0.001
R DS(ON) , Static Drain-Source OnState Resistance(Ω)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C055S6R
Issued Date : 2017.12.26
Revised Date :
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
100
Capacitance---(pF)
Ciss
10
C oss
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
1
0
5
10
15
20
25
VDS, Drain-Source Voltage(V)
-75 -50 -25
30
50
75 100 125 150 175
Maximum Drain Current vs JunctionTemperature
10
1
-ID, Maximum Drain Current(A)
0.5
100μs
1ms
0.1
10ms
100ms
TA=25°C, Tj=150°C,
VGS=10V, RθJA=417°C/W
Single Pulse
0.01
DC
0.001
0.4
0.3
0.2
0.1
TA=25°C, VGS=10V, RθJA=417°C/W
0
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
Forward Transfer Admittance vs Drain Current
75
100
125
Tj, Junction Temperature(°C)
150
175
Gate Charge Characteristics
1
10
VDS=5V
-VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
ID, Drain Current (A)
0
VDS=10V
0.1
Ta=25°C
Pulsed
0.01
0.001
MTDK8S6R
8
6
4
VDS=15V
ID=1A
2
0
0.01
0.1
ID, Drain Current(A)
1
0
0.4
0.8
1.2
1.6
Qg, Total Gate Charge(nC)
2
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C055S6R
Issued Date : 2017.12.26
Revised Date :
Page No. : 6/ 9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
10
1.8
VDS=10V
1.6
ID, Drain Current(A)
TJ(MAX) =150°C
TA=25°C
RθJA=417°C/W
8
1.4
Power (W)
1.2
1.0
0.8
6
4
0.6
0.4
2
0.2
0.0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
0.001
0.01
0.1
1
Pulse Width(s)
10
1.E+02
1.E+03
100
Transient Thermal Response Curves
1
r(t), Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA (t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA =417 °C/W
0.05
0.02
0.01
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTDK8S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C055S6R
Issued Date : 2017.12.26
Revised Date :
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTDK8S6R
CYStek Product Specification
CYStech Electronics Corp.
MTDK8S6R
Spec. No. : C055S6R
Issued Date : 2017.12.26
Revised Date :
Page No. : 8/ 9
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C055S6R
Issued Date : 2017.12.26
Revised Date :
Page No. : 9/ 9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTDK8S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C055S6R
Issued Date : 2017.12.26
Revised Date :
Page No. : 10/ 9
SOT-363 Dimension
K8
XX
Marking:
Date
Code
Device
Code
6-Lead SOT-363 Plastic
Surface Mounted Package
CYStek Package Code: S6R
Style:
Pin 1. Source1 (S1)
Pin 2. Gate1 (G1)
Pin 3. Drain2 (D2)
Pin 4. Source2 (S2)
Pin 5. Gate2 (G2)
Pin 6. Drain1 (D1)
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDK8S6R
CYStek Product Specification
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