FJV3102R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor (R1 = 10 kΩ, R2 = 10 kΩ) Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Application • Switching, Interface, and Driver Circuits • Inverters • Digital Applications in Industrial Segments Equivalent Circuit C 3 R1 B 2 1 R2 SOT-23 1. Base 2. Emitter 3. Collector E Ordering Information Part Number Top Mark Package Packing Method FJV3102RMTF R22 SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current 100 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C © 2002 Fairchild Semiconductor Corporation FJV3102R Rev. 1.1.2 www.fairchildsemi.com 1 FJV3102R — NPN Epitaxial Silicon Transistor with Bias Resistor November 2013 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Value Unit Power Dissipation Parameter 200 mW Derate Above TA = 25°C 1.60 mW/°C Thermal Resistance, Junction to Ambient 625 °C/W Note: 1. FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 50 V BVCEO Collector-Emitter Breakdown Voltage IC = 100 μA, IB = 0 50 V ICBO Collector Cut-Off Current VCB = 40 V, IE = 0 hFE DC Current Gain VCE = 5 V, IC = 5 mA Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA VCE(sat) fT 0.1 μA 0.3 V 30 Current Gain Bandwidth Product VCE = 10 V, IC = 5 mA 250 MHz Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 3.7 pF VI(off) Input-Off Voltage VCE = 5 V, IC = 100 μA VI(on) Input-On Voltage VCE = 0.3 V, IC = 10 mA Cob 0.5 V kΩ 3 V R1 Input Resistor 7 10 13 R1/R2 Resistor Ratio 0.9 1.0 1.1 © 2002 Fairchild Semiconductor Corporation FJV3102R Rev. 1.1.2 www.fairchildsemi.com 2 FJV3102R — NPN Epitaxial Silicon Transistor with Bias Resistor Thermal Characteristics(1) 100 1000 VCE =0.3V R1 = 10 K R2 = 10 K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN VCE = 5V R1 = 10K R2 = 10K 100 10 1 10 100 10 1 0.1 0.1 1000 1 IC[mA], COLLECTOR CURRENT 280 VCE = 5V R1 = 10K R2 = 10K 240 100 10 0.0 0.4 0.8 1.2 1.6 2.0 200 160 120 80 40 0 2.4 0 25 50 75 100 125 150 175 o TA[ C], AMBIENT TEMPERATURE VI(off)[V], INPUT OFF VOLTAGE Figure 3. Input-Off Voltage © 2002 Fairchild Semiconductor Corporation FJV3102R Rev. 1.1.2 100 Figure 2. Input-On Voltage PC[mW], POWER DISSIPATION IC [μA], COLLECTOR CURRENT Figure 1. DC Current Gain 1000 10 IC[mA], COLLECTOR CURRENT Figure 4. Power Derating www.fairchildsemi.com 3 FJV3102R — NPN Epitaxial Silicon Transistor with Bias Resistor Typical Performance Characteristics FJV3102R — NPN Epitaxial Silicon Transistor with Bias Resistor Physical Dimensions SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 5. 3-LEAD, SOT-23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA03D_BK.pdf. © 2002 Fairchild Semiconductor Corporation FJV3102R Rev. 1.1.2 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ mWSaver® OptoHiT¥ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FPS¥ Sync-Lock™ ® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ ®* TinyBoost® TinyBuck® TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its safety or effectiveness. accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 © Fairchild Semiconductor Corporation www.fairchildsemi.com