CMPA2735015D 15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. Typical Performance Over 2.7-3.5 GHz (TC = 25˚C) Parameter 2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain 36 35 35 35 35 dB Output Power1 20 22 26 27 26 W Power Gain 27 27 28 28 28 dB 51 57 54 52 52 % 1 PAE1 Note : PIN = 16 dBm, Pulse Width = 500 μs; Duty Cycle = 10% 1 17 Rev 0.0 – May 20 Features • 35 dB Small Signal Gain • 20 W Typical PSAT • Operation up to 50 V • High Breakdown Voltage • • High Temperature Operation Applications • Civil and Military Pulsed Radar Amplifiers Size 0.118 x 0.071 x 0.004 inches Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Symbol Rating Drain-source Voltage Parameter VDSS 150 VDC Gate-source Voltage VGS -10, +2 VDC Storage Temperature TSTG -65, +150 ˚C TJ 225 ˚C RθJC - ˚C/W TS 260 ˚C Operating Junction Temperature Thermal Resistance, Junction to Case (packaged) Mounting Temperature (30 seconds) Units Electrical Characteristics (Frequency = 2.7 GHz to 3.5 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(TH) -3.8 -3.0 -2.3 V Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDD = 50 V, IDQ = 80 mA, Saturated Drain Current1 IDS – 3.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD – 150 – V VGS = -8 V, ID = 3 mA Small Signal Gain1 S21 – 36 – dB VDD = 50 V, IDQ = 80 mA, Frequency = 2.7 GHz Small Signal Gain2 S21 – 35 – dB VDD = 50 V, IDQ = 80 mA, Frequency = 3.1 GHz Small Signal Gain3 S21 – 35 – dB VDD = 50 V, IDQ = 80 mA, Frequency = 3.5 GHz Power Output1 POUT – 21 – W VDD = 50 V, IDQ = 80 mA, PIN = 16 dBm, Frequency = 2.7 GHz Power Output2 POUT – 28 – W VDD = 50 V, IDQ = 80 mA, PIN = 16 dBm, Frequency = 3.1 GHz Power Output3 POUT – 27 – W VDD = 50 V, IDQ = 80 mA, PIN = 16 dBm, Frequency = 3.5 GHz Power Added Efficiency1 PAE – 54 – % VDD = 50 V, IDQ = 80 mA, Frequency = 2.7 GHz Power Added Efficiency2 PAE – 57 – % VDD = 50 V, IDQ = 80 mA, Frequency = 3.1 GHz Power Added Efficiency3 PAE – 55 – % VDD = 50 V, IDQ = 80 mA, Frequency = 3.5 GHz GP – 27 – dB VDD = 50 V, IDQ = 80 mA Input Return Loss S11 – 8 – dB VDD = 50 V, IDQ = 80 mA Output Return Loss S22 – 8 – dB VDD = 50 V, IDQ = 80 mA VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 50 V, IDQ = 80 mA, POUT = 15W Pulsed DC Characteristics VDS = 10 V, ID = 3 mA RF Characteristics2 Power Gain Output Mismatch Stress Notes: 1 Scaled from PCM data. 2 All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 1%. Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA2735015D Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF Die Dimensions (units in microns) Die Assembly Notes: • • • • • • • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at http://www.cree.com/RF/Document-Library Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Die back side gold plating is 5 microns thick minimum. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. Use the die label (XX-YY) for correct orientation. Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA2735015D Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF Block Diagram Showing Additional Capacitors & Output Matching Section for Operation Over 2.7 to 3.5 GHz Designator Description Quantity C1,C4,C9,C12 CAP, 10pF, 100V, 0402 4 C2,C5 CAP, 100pF, 100V, 0603 2 C3,C6,C8,C11 CAP, 470pF, 100V, 0603 4 C7 CAP, 33uF, 50V, ELECT, MVY, SMD 1 C12 CAP, 10uF, 16V, TANTALUM, SMD 1 RES, 100Ohm, 1/16W, 0603 2 R1,R2 Notes: 1 The input, output and decoupling capacitors should be attached as close as possible to the die- typical distance is 40 to 50 mils. 2 The MMIC die and capacitors should be connected with 1 mil gold bond wires. Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA2735015D Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF Typical Performance Gain and Input Return Loss vs Frequency Figure 1. - Gain and Input 50V, IDQ =Return 0.08A Loss vs Frequency VDD = VDD = 50 V, IDQ = 0.08 A S21 (dB), S11 (dB), S22 (dB) 40 20 0 -20 S21 S11 S22 -40 2.6 2.7 2.8 2.9 3 3.1 3.2 Frequency (GHz) 3.3 3.4 3.5 3.6 Output Power and Power Added Efficiency vs Frequency VDD = 50V, IDQ = 0.08A, PIN = 16dBm, Pulse Width = 500µS, Duty Cycle = 10% Figure 2. - Output Power and PAE vs Frequency VDD = 50 V, IDQ = 0.08 A, PIN = 16 dBm, Pulse Width = 500 μs, Duty Cycle = 10% 50 65 Output Power 60 Efficiency 46 55 Gain 44 PAE (%) Output Power (dBm) 48 50 Gain 42 Pout 45 PAE 40 2.7 2.8 2.9 3 3.1 3.2 Frequency (GHz) 3.3 Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA2735015D Rev 0.0 3.4 3.5 40 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF Typical Performance Associated Gain at Maximum Power Added Efficiency vs Frequency VDD = 28V, IDQ = 0.08A Figure 3. - Associated Gain vs Frequency VDD = 50 V, IDQ = 0.08 A, PIN = 16 dBm Pulse Width = 500 μs, Duty Cycle = 10% 30 Associated Gain (dB) 28 26 24 22 Gain 20 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 Frequency (GHz) Gain and Power Added Efficiency vs Output Power VDD = 28V, IDQ = 0.08A Figure 4. - Gain and Power Added Efficiency vs Output Power VDD = 50 V, IDQ = 0.08 A, Frequency = 3.1 GHz Pulse Width = 500 μs, Duty Cycle = 10% 70 40 Output Power 38 60 36 50 Efficiency 32 40 30 Gain 30 28 26 20 Gain 24 Gain 22 20 36 37 38 39 40 41 Output Power (dBm) 42 43 Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 10 PAE 35 CMPA2735015D Rev 0.0 PAE (%) Gain (dB) 34 44 45 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF Part Number System CMPA2735015D Package Power Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line Parameter Value Units Lower Frequency 2.7 GHz Upper Frequency 3.5 GHz Power Output 15 W Bare Die - Package Table 1. Note: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CMPA2735015D Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF Product Ordering Information Order Number Description Unit of Measure CMPA2735015D GaN MMIC Each Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CMPA2735015D Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CMPA2735015D Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF