DMN3020UFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features RDS(ON) Max ID Max 0.6mm Profile – Ideal for Low Profile Applications TC = +25°C PCB Footprint of 4mm2 Low Gate Threshold Voltage Fast Switching Speed 19mΩ @ VGS = 4.5V 15A 25mΩ @ VGS = 2.5V 14A ESD Protected Gate 40mΩ @ VGS = 1.8V 10A 120mΩ @ VGS = 1.5V 6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 30V Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Case: U-DFN2020-6 (Type F) Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. ideal for high efficiency power management applications. Battery Management Application Power Management Functions DC-DC Converters Solderable per MIL-STD-202, Method 208 e4 Weight: 0.007 Grams (Approximate) U-DFN2020-6 (Type F) D G ESD PROTECTED Bottom View Top View Gate Protection Diode Pin Out Bottom View S Internal Schematic Ordering Information (Note 4) Part Number DMN3020UFDF-7 DMN3020UFDF-13 Notes: Case U-DFN2020-6 (Type F) U-DFN2020-6 (Type F) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 2F Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMN3020UFDF Datasheet number: DS38208 Rev. 2 - 2 Mar 3 YM Marking Information 2017 E Apr 4 2F = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) 2018 F May 5 Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 2020 H Aug 8 Sep 9 2021 I Oct O 2022 J Nov N Dec D February 2016 © Diodes Incorporated DMN3020UFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V TC = +25°C TC = +70°C TA = +25°C TA = +70°C Steady State t<5s ID TA = +25°C Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Unit V V A IDM 10.4 8.3 40 IS 2.2 A IAS EAS 17 15 A mJ ID Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%) Continuous Source-Drain Diode Current (Note 6) Value 30 ±12 15 13 A A Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady State t<5s TA = +25°C TA = +70°C Steady State t<5s Steady State Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics Value 0.73 0.47 171 112 2.03 1.30 63 40 18 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 1 ±10 V µA µA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±10V, VDS = 0V VGS(TH) 0.4 RDS(ON) — VSD — 1.0 19 25 40 120 1.2 V Static Drain-Source On-Resistance 0.6 16 19 26 32 0.6 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 4.5A VGS = 2.5V, ID = 3.5A VGS = 1.8V, ID = 2.0A VGS = 1.5V, ID = 1.0A VGS = 0V, IS = 1.0A Ciss Coss Crss Rg Qg Qg Qgs Qgd — — — — — — — — — — — — — — 1304 87 80 1.3 15 27 2.0 2.1 4.1 4.8 20.5 3.2 7.1 1.7 — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — mΩ V Test Condition pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 15V, ID = 4.5A ns VDS = 15V, VGS = 4.5V, RG = 1Ω, ID = 4.5A ns nC IF = 1.0A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN3020UFDF Datasheet number: DS38208 Rev. 2 - 2 2 of 7 www.diodes.com February 2016 © Diodes Incorporated DMN3020UFDF 30.0 25 VDS = 5V VGS = 4.5V 20 VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 20.0 VGS = 2.5V 15.0 VGS = 1.5V VGS = 1.8V 10.0 5.0 15 10 25oC 5 150oC VGS = 1.2V -55oC 0 0.0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0.5 3 0.018 0.016 VGS = 4.5V 0.014 0.012 0 5 10 15 20 25 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 2.5V ID = 4.5A 0.08 0.06 ID = 2.0A 0.04 0.02 0 0 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage Figure 4. Typical Transfer Characteristic 0.04 VGS = 4.5V 0.035 150oC 0.03 0.025 125oC 0.02 85oC 0.015 25oC 0.01 2 0.1 ID, DRAIN-SOURCE CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.022 0.02 0.8 1.1 1.4 1.7 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85oC 125oC -55oC 0.005 0 1.8 VGS = 4.5V, ID = 4.5A 1.6 1.4 1.2 VGS = 2.5V, ID = 3.5A 1 0.8 0.6 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN3020UFDF Datasheet number: DS38208 Rev. 2 - 2 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 Figure 6. On-Resistance Variation with Temperature 3 of 7 www.diodes.com February 2016 © Diodes Incorporated 0.035 0.03 0.025 VGS = 2.5V, ID = 3.5A 0.02 0.015 1 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMN3020UFDF VGS = 4.5V, ID = 4.5A 0.9 0.8 ID = 1mA 0.7 0.6 0.5 ID = 250µA 0.4 0.3 0.2 0.1 0.01 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 -50 Figure 7. On-Resistance Variation with Temperature -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 Figure 8. Gate Threshold Variation vs. Temperature 30 100000 IDSS, LEAKAGE CURRENT (nA) VGS = 0V IS, SOURCE CURRENT (A) 25 20 15 TA = 85oC 10 TA = 25oC TA = 125oC TA = 150oC 5 TA = -55oC 150oC 10000 125oC 1000 85oC 100 10 1 0 25oC 0.1 0 0.3 0.6 0.9 1.2 1.5 0 VSD, SOURCE-DRAIN VOLTAGE (V) 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) 20 Figure 10. Typical Drain-Source Leakage Current vs. Voltage Figure 9. Diode Forward Voltage vs. Current 8 10000 Ciss 6 1000 VGS (V) CT, JUNCTION CAPACITANCE (pF) f=1MHz 4 Coss 100 2 Crss VDS = 15V, ID = 4.5A 0 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) 30 Datasheet number: DS38208 Rev. 2 - 2 4 8 12 16 20 24 28 Qg (nC) Figure 11. Typical Junction Capacitance DMN3020UFDF 0 Figure 12. Gate Charge 4 of 7 www.diodes.com February 2016 © Diodes Incorporated DMN3020UFDF 100 PW =100µs ID, DRAIN CURRENT (A) RDS(ON) Limited 10 1 PW =1ms PW =10ms 0.1 0.01 TJ(Max) = 150℃ PW =100ms TA = 25℃ PW =1s Single Pulse PW =10s DUT on 1*MRP Board DC VGS= 4.5V 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 171℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) 10 100 1000 Figure 14. Transient Thermal Resistance DMN3020UFDF Datasheet number: DS38208 Rev. 2 - 2 5 of 7 www.diodes.com February 2016 © Diodes Incorporated DMN3020UFDF Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) A1 A A3 Seating Plane D e3 e4 k2 D2a E z2 D2 E2a E2 k1 z1 z(4x) e2 k e L b U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) X3 C Y X Dimensions Y3 Y2 Y1 Y4 X1 Pin1 C X X1 X2 X3 Y Y1 Y2 Y3 Y4 Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 X2 DMN3020UFDF Datasheet number: DS38208 Rev. 2 - 2 6 of 7 www.diodes.com February 2016 © Diodes Incorporated DMN3020UFDF IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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