SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.6 0.6 0.4 0.2 0 0.01 0.1 1 1.4 0.01 10 1 10 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC VCE=5V -55°C +25°C +100°C +175°C 1.6 1.5K 1K 0.8 0.6 - (Volts) 1.0 - Typical Gain 1.4 1.2 IC/IB=50 1.2 1.0 h V 0.6 h 0.4 0.2 0 0 0.01 0.1 10 1 0 1.6 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 1 -55°C +25°C +100°C +175°C VCE=5V 1.4 0.1 1.2 1.0 DC 1s 100ms 10ms 1ms 100µs 0.8 0.01 0.6 0.4 0.2 0 0 0.01 0.1 1 0.001 1V 10 IC - Collector Current (Amps) 10V 100V VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 228 E C B PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 180 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 0.5 A 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.8 500 0.4 0.2 - (Volts) 0.1 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 C ABSOLUTE MAXIMUM RATINGS. 0.2 0 V IC/IB=50 V V 0.4 - Normalised Gain -55°C +25°C +100°C +175°C 0.8 IC/IB=10 - (Volts) - (Volts) Tamb=25°C IC/IB=50 0.8 FZT696B ISSUE 4 FEBRUARY 1997 FEATURES * 250 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits PARTMARKING DETAIL FZT696B 1000V PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 180 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 180 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 µA VCB=140V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.2 0.25 V V V IC=50mA, IB=0.5mA* IC=100mA, IB=2mA* IC=200mA, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=200mA, IB=5mA* Base-Emitter Turn-OnVoltage VBE(on) 0.9 V IC=200mA, VCE=5V* Static Forward Current Transfer Ratio hFE 500 150 Transition Frequency fT 70 Input Capacitance Cibo Output Capacitance Cobo Switching Times ton toff IC=100mA, VCE=5V* IC=200mA, VCE=5V* MHz IC=50mA, VCE=5V f=50MHz 200 pF VEB=0.5V, f=1MHz 6 pF VCE=10V, f=1MHz 80 4400 ns ns IC=100mA, IB1=10mA IB2=10mA, VCC=50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 227 SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.6 0.6 0.4 0.2 0 0.01 0.1 1 1.4 0.01 10 1 10 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC VCE=5V -55°C +25°C +100°C +175°C 1.6 1.5K 1K 0.8 0.6 - (Volts) 1.0 - Typical Gain 1.4 1.2 IC/IB=50 1.2 1.0 h V 0.6 h 0.4 0.2 0 0 0.01 0.1 10 1 0 1.6 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 1 -55°C +25°C +100°C +175°C VCE=5V 1.4 0.1 1.2 1.0 DC 1s 100ms 10ms 1ms 100µs 0.8 0.01 0.6 0.4 0.2 0 0 0.01 0.1 1 0.001 1V 10 IC - Collector Current (Amps) 10V 100V VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 228 E C B PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 180 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 0.5 A 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.8 500 0.4 0.2 - (Volts) 0.1 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 C ABSOLUTE MAXIMUM RATINGS. 0.2 0 V IC/IB=50 V V 0.4 - Normalised Gain -55°C +25°C +100°C +175°C 0.8 IC/IB=10 - (Volts) - (Volts) Tamb=25°C IC/IB=50 0.8 FZT696B ISSUE 4 FEBRUARY 1997 FEATURES * 250 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits PARTMARKING DETAIL FZT696B 1000V PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 180 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 180 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 µA VCB=140V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.2 0.25 V V V IC=50mA, IB=0.5mA* IC=100mA, IB=2mA* IC=200mA, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=200mA, IB=5mA* Base-Emitter Turn-OnVoltage VBE(on) 0.9 V IC=200mA, VCE=5V* Static Forward Current Transfer Ratio hFE 500 150 Transition Frequency fT 70 Input Capacitance Cibo Output Capacitance Cobo Switching Times ton toff IC=100mA, VCE=5V* IC=200mA, VCE=5V* MHz IC=50mA, VCE=5V f=50MHz 200 pF VEB=0.5V, f=1MHz 6 pF VCE=10V, f=1MHz 80 4400 ns ns IC=100mA, IB1=10mA IB2=10mA, VCC=50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 227