DMC31D5UDJ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION NEWPRODUCT PRODUCT NEW ADVANCE INFORMATION Device V(BR)DSS Features and Benefits RDS(ON) max ID max TA = +25°C 1.5Ω @ VGS = 4.5V Q1 30V 2.0Ω @ VGS = 2.5V 0.22A 3.0Ω @ VGS = 1.8V 4.5Ω @ VGS = 1.5V 5Ω @ VGS = -4.5V Q2 -30V 6Ω @ VGS = -2.5V -0.2A 7Ω @ VGS = -1.8V • Low On-Resistance • Very low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Switching Speed • Ultra-Small Surface Mount Package 1mm x 1mm • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability Mechanical Data 10Ω @ VGS = -1.5V • Description • Case: SOT963 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it • Moisture Sensitivity: Level 1 per J-STD-020 ideal for high efficiency power management applications. • Terminal Connections Indicator: See Diagram • Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 e3 • Weight: 0.027 grams (approximate) Applications • General Purpose Interfacing Switch • Power Management Functions • Analog Switch SOT963 ESD PROTECTED Top View D1 G2 S2 S1 G1 D2 Top View Schematic and Transistor Diagram Ordering Information (Note 4) Part Number DMC31D5UDJ-7 DMC31D5UDJ-7B Notes: Case SOT963 SOT963 Packaging 10K/Tape & Reel 10K/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. The options -7 and -7B stand for different taping orientations. Marking Information U1 DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 U1 = Product Type Marking Code 1 of 9 www.diodes.com June 2014 © Diodes Incorporated DMC31D5UDJ Maximum Ratings Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol NEW PRODUCT ADVANCE INFORMATION NEWPRODUCT PRODUCT NEW ADVANCE INFORMATION Drain-Source Voltage Value 30 Units V VGSS ±12 V ID 220 160 mA IS 200 mA IDM 600 mA Value -30 Units V VGSS ±12 V ID -200 -140 mA IS -200 mA IDM -600 mA Value 350 361 -55 to +150 Units mW °C/W °C VDSS Gate-Source Voltage Steady State Continuous Drain Current (Note 5) VGS = 4.5V TA = +25°C TA = +70°C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (Note 6) Maximum Ratings Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = +25°C TA = +70°C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (Note 6) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Steady State Symbol PD RθJA TJ, TSTG Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance @TC = +25°C Symbol Min Typ BVDSS 30 — — V IDSS — — 100 nA VDS = 24V, VGS = 0V IGSS — — ±10 µA VGS = ±10V, VDS = 0V VGS(th) 0.4 — 1.0 V VDS = VGS, ID = 250μA — 0.9 1.5 VGS = 4.5V, ID = 100mA — 1.0 2.0 VGS = 2.5V, ID = 50mA — 1.2 3.0 — 1.4 4.5 — 2.3 — 0.6 1.0 V RDS(ON) Max Unit Ω — Ciss — 22.6 — pF Output Capacitance Coss — 2.68 — pF Reverse Transfer Capacitance Crss — 1.8 — pF Total Gate Charge Qg — 0.38 — nC Gate-Source Charge Qgs — 0.05 — nC Gate-Drain Charge Qgd — 0.07 — nC Turn-On Delay Time tD(on) — 3.2 — ns Turn-On Rise Time tr — 2.2 — ns Turn-Off Delay Time tD(off) — 21 — ns tf — 7.5 — ns Document number: DS36799 Rev. 2 - 2 2 of 9 www.diodes.com VGS = 1.8V, ID = 20mA VGS = 1.2V, ID = 1mA VSD DMC31D5UDJ VGS = 0V, ID = 250μA VGS = 1.5V, ID = 10mA Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Turn-Off Fall Time Test Condition VGS = 0V, IS = 10mA VDS = 15V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 15V, ID = 200mA VDD = 15V, VGS = 4.5V, RG = 2Ω, ID = 200mA June 2014 © Diodes Incorporated DMC31D5UDJ Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.) NEW PRODUCT ADVANCE INFORMATION NEWPRODUCT PRODUCT NEW ADVANCE INFORMATION Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance @TC = +25°C Symbol Min Typ BVDSS -30 — — V IDSS — — 100 nA VDS = -24V, VGS = 0V IGSS — — ±10 µA VGS = ±10V, VDS = 0V VGS(th) -0.4 — -1.0 V VDS = VGS, ID = -250μA — 2.0 5 VGS = -4.5V, ID = -100mA — 2.5 6 VGS = -2.5V, ID = -50mA — 3.0 7 — 3.4 10 — 5.1 — RDS(ON) Max Unit Ω VGS = -1.8V, ID = -20mA VGS = -1.2V, ID = -1mA VSD — -0.6 -1.0 V Ciss — 21.8 — pF Output Capacitance Coss — 2.82 — pF Reverse Transfer Capacitance Crss — 1.66 — pF Total Gate Charge Qg — 0.35 — nC Gate-Source Charge Qgs — 0.05 — nC Gate-Drain Charge Qgd — 0.10 — nC Turn-On Delay Time tD(on) — 3.5 — ns Turn-On Rise Time tr — 5.2 — ns Turn-Off Delay Time tD(off) — 18.8 — ns tf — 8.7 — ns Notes: VGS = 0V, ID = -250μA VGS = -1.5V, ID = -10mA Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Turn-Off Fall Time Test Condition VGS = 0V, IS = -10mA VDS = -15V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS =- 15V, ID = -200mA VDD = -15V, VGS = -4.5V, RG = 2Ω, ID = -200mA 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 3 of 9 www.diodes.com June 2014 © Diodes Incorporated DMC31D5UDJ N-CHANNEL VGS = 4.0V ID, DRAIN CURRENT (A) 0.6 VGS = 2.0V 0.5 VGS = 3.0V VGS = 1.5V 0.4 0.3 VGS = 1.2V 0.2 0.3 0.2 TA = 150°C TA = 125°C VGS = 1.0V 0.0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.5 2 VGS = 1.5V 1.5 VGS = 1.8V 1 VGS = 2.5V VGS = 4.5V 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.8 VGS = 4.5V ID = 300mA 1.6 1.4 VGS = 2.5V ID = 100mA 1.2 1 0.8 0.6 -50 0 3 3 0 0.4 0.1 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VDS = 5.0V VGS = 2.5V 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT ADVANCE INFORMATION NEWPRODUCT PRODUCT NEW ADVANCE INFORMATION 0.7 0.6 VGS = 4.5V ID, DRAIN CURRENT (A) 0.8 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 4 of 9 www.diodes.com TA = 85°C TA = 25°C TA = -55°C 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 3 VGS = 4.5V 2.5 TA = 150°C 2 TA = 125°C T A = 85°C 1.5 TA = 25°C 1 TA = -55°C 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 0.8 3 2.5 2 VGS = 2.5V ID = 100mA 1.5 VGS = 4.5V ID = 300mA 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature June 2014 © Diodes Incorporated DMC31D5UDJ 0.7 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 0.8 0.9 0.8 ID = 1mA 0.7 ID = 250µA 0.6 0.5 0.6 TA = 150°C 0.5 TA = 125°C 0.4 TA = 25°C 0.3 TA = 85°C 0.2 TA = -55°C 0.1 0 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 VGS GATE THRESHOLD VOLTAGE (V) 100 CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT ADVANCE INFORMATION NEWPRODUCT PRODUCT NEW ADVANCE INFORMATION 1 Ciss 10 Coss Crss 8 6 VDS = 15V ID = 200mA 4 2 f = 1MHz 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 30 5 of 9 www.diodes.com 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge June 2014 © Diodes Incorporated DMC31D5UDJ P-CHANNEL 0.8 VGS = -4.0V 0.5 -ID, DRAIN CURRENT (A) 0.5 VGS = -2.0V 0.4 0.3 VGS = -1.5V 0.2 0.4 0.3 0.2 0.1 VGS = -1.2V VGS = -1.0V TA = 150°C TA = 125°C TA = 85°C 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics VGS = -1.5V VGS = -1.8V VGS = -2.5V VGS = -4.5V 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.8 0.8 VGS = -4.5V ID = -300mA 1.6 1.4 VGS = -2.5V ID = -100mA 1.2 1 0.8 0.6 -50 0 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = -3.0V 0.6 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VDS = -5.0V VGS = -2.5V RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) -ID, DRAIN CURRENT (A) 0.7 NEW PRODUCT ADVANCE INFORMATION NEWPRODUCT PRODUCT NEW ADVANCE INFORMATION 0.6 VGS = -4.5V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 6 of 9 www.diodes.com TA = 25°C T A = -55°C 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 8 VGS = -4.5V 7 6 TA = 150°C 5 4 TA = 85°C TA = 125°C 3 2 TA = 25°C TA = -55°C 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 0.8 6 5 VGS = -2.5V ID = -100mA 4 3 VGS = -4.5V ID = -300mA 2 1 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature June 2014 © Diodes Incorporated DMC31D5UDJ 0.8 0.8 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.7 0.9 -I D = 1mA 0.7 -I D = 250µA 0.6 0.5 0.6 TA= 150°C 0.5 TA= 125°C 0.4 0.3 TA= 85°C TA= 25°C 0.2 TA= -55° C 0.1 0 0.4 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature C iss 10 Coss Crss 1 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 1 r(t), TRANSIENT THERMAL RESISTANCE 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 f = 1MHz -VGS, GATE-SOURCE VOLTAGE (V) 100 CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT ADVANCE INFORMATION NEWPRODUCT PRODUCT NEW ADVANCE INFORMATION 1 30 8 6 VDS = -15V ID = -200mA 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 0.8 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 365°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.000001 0.00001 DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 11 Transient Thermal Resistance 7 of 9 www.diodes.com 10 100 1000 June 2014 © Diodes Incorporated DMC31D5UDJ Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. NEW PRODUCT ADVANCE INFORMATION NEWPRODUCT PRODUCT NEW ADVANCE INFORMATION D e1 L E E1 e b (6 places) c A SOT963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 c 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm A1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 8 of 9 www.diodes.com June 2014 © Diodes Incorporated DMC31D5UDJ NEW PRODUCT ADVANCE INFORMATION NEWPRODUCT PRODUCT NEW ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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