SANGDEST MICROELECTRONICS MBR15200S Technical Data Data Sheet N1338, Rev. A Green Products MBR15200S SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Center tap configuration Features: • • • • • • • Designed as Bypass Diodes for Solar Panels High Forward Surge Capability Ultra Low Forward Voltage Drop Excellent High Temperature Stability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm TO-277B • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR15200S Technical Data Data Sheet N1338, Rev. A Green Products Marking Diagram: Where XXXXX is YYWWL 15 200 S YY WW L = Forward Current (15A) = Reverse Voltage (200V) = Device Type = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL: 94V-0 Ordering Information: Device MBR15200S Package Shipping TO-277B (Pb-Free) 5000pcs/ reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Average Forward Current Peak One Cycle NonRepetitive Surge Current (per leg) Symbol Condition - Max. Units 200 V IF(AV) 50% duty cycle @TC = 136°C, rectangular wave form 15 A IFSM 8.3 ms, half Sine pulse 250 A VRWM • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR15200S Technical Data Data Sheet N1338, Rev. A Green Products Electrical Characteristics: Characteristics Forward Voltage Drop Reverse Current Symbol VF1 VF2 IR1 IR2 Junction Capacitance (per leg) Voltage Rate of Change * CT dv/dt Condition @ 15A, Pulse, TJ = 25 °C @ 15A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125°C @VR = 5V, TC = 25 °C fSIG = 1MHz - Max. 0.92 0.76 Units V V 1.0 mA 10 mA 400 pF 10,000 V/μs Specification -55 to +200 -55 to +200 Units °C °C 25 °C/W 0.08 g Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Symbol TJ Tstg Typical Thermal Resistance Junction to Ambient RθJA Approximate Weight Case Style wt Condition DC operation TO-277B • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR15200S Technical Data Data Sheet N1338, Rev. A Green Products 1000 Instantaneous Reverse Current ( μA) TJ=25℃ 100 10 0 5 10 15 20 25 30 35 TJ=125℃ 100 10 1 TJ=25℃ 0.1 0.01 0.001 10 40 20 30 40 50 60 70 80 Fig.2-Typical Reverse Characteristics Fig.1-Typical Junction Capacitance 100 TJ=125℃ 10 TJ=25℃ 1 0.4 0.5 90 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Instantaneous Forward Current (A) Junction Capacitance (PF) 1000 0.6 0.7 0.8 0.9 1 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N1338, Rev. A MBR15200S Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •