ON NTP5860NLG N-channel power mosfet Datasheet

NTB5860NL, NTP5860NL,
NVB5860NL
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
•
•
•
•
•
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Low RDS(on)
High Current Capability
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
RDS(on) MAX
V(BR)DSS
ID MAX
3.0 mW @ 10 V
60 V
220 A
3.6 mW @ 4.5 V
D
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
ID
220
A
Continuous Drain
Current, RqJC
Steady
State
Power Dissipation,
RqJC
Steady
State
TA = 25°C
TA = 100°C
4
283
W
IDM
660
A
Current Limited by Package
IDMmax
130
A
Operating and Storage Temperature Range
TJ, Tstg
−55 to
+175
°C
IS
130
A
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
EAS
735
mJ
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
TL
260
°C
Symbol
Max
Unit
Junction−to−Case (Drain) Steady State
RqJC
0.53
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
28
tp = 10 ms
Source Current (Body Diode)
S
N−CHANNEL MOSFET
156
PD
Pulsed Drain Current
TA = 25°C
G
4
1
3
1
2
D2PAK
CASE 418B
STYLE 2
TO−220AB
CASE 221A
STYLE 5
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
THERMAL RESISTANCE RATINGS
Parameter
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
2
NTB
5860NLG
AYWW
NTP
5860NLG
AYWW
1
Gate
3
Source
1
Gate
2
Drain
3
Source
2
Drain
G
A
Y
WW
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
Augsut, 2012 − Rev. 1
1
Publication Order Number:
NTB5860NL/D
NTB5860NL, NTP5860NL, NVB5860NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VDS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−Source Leakage Current
IDSS
V
6.1
ID = 250 mA
mV/°C
VGS = 0 V
VDS = 60 V
TJ = 25°C
1.0
VGS = 0 V
VDS = 60 V
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = $20 V
VGS(th)
VGS = VDS, ID = 250 mA
mA
$100
nA
3.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On−Resistance
VGS(th)/TJ
−7.7
RDS(on)
Forward Transconductance
1.0
gFS
mV/°C
VGS = 10 V, ID = 20 A
2.4
3.0
mW
VGS = 4.5 V, ID = 20 A
2.8
3.6
VDS = 15 V, ID = 30 A
47
S
13216
pF
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Coss
Transfer Capacitance
Crss
752
Total Gate Charge
QG(TOT)
220
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 10 V, VDS = 48 V,
ID = 40 A
1127
nC
13
37
54
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
ns
25
VGS = 10 V, VDD = 48 V,
ID = 100 A, RG = 2.5 W
tf
58
98
144
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
Reverse Recovery Stored Charge
VGS = 0 V
IS = 40 A
TJ = 25°C
0.76
TJ = 125°C
0.60
50
VGS = 0 V, IS = 100 A,
dIS/dt = 20 A/ms
QRR
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2
Vdc
ns
25
25
71
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.1
nC
NTB5860NL, NTP5860NL, NVB5860NL
TYPICAL CHARACTERISTICS
VGS =
10 V
240
VGS = 4 V
4.4 V
280
TJ = 25°C
ID, DRAIN CURRENT (A)
3.8 V
200
3.6 V
160
120
3.4 V
80
3.2 V
200
160
120
40
0
0
1
2
3
4
5
TJ = 25°C
80
40
0
VDS ≥ 10 V
240
TJ = 125°C
2
3
5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.0035
ID = 20 A
TJ = 25°C
0.006
TJ = 25°C
VGS = 4.5 V
0.0030
0.004
VGS = 10 V
0.0025
0.002
0.000
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.008
2
4
6
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.0020
10
30
50
90
70
110
130
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
100000
2.0
VGS = 0 V
ID = 20 A
1.8 V = 10 V
GS
1.6
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
280
1.4
10000
1.2
1.0
TJ = 125°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
1000
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTB5860NL, NTP5860NL, NVB5860NL
16000
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
Ciss
14000
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
12000
10000
8000
6000
4000
Coss
2000
0
0
Crss
10
20
30
40
QT
8
6
Qgs
4
Qgd
2
0
VDS = 48 V
ID = 40 A
TJ = 25°C
0
50
100
150
200
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
250
180
VDD = 48 V
ID = 40 A
VGS = 10 V
IS, SOURCE CURRENT (A)
tf
td(off)
100
VGS = 0 V
TJ = 25°C
160
tr
td(on)
140
120
100
80
60
40
20
10
1
10
100
0
0.60
0.70
0.80
0.90
1.00
1.10
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
ID, DRAIN CURRENT (A)
t, TIME (ns)
10
1 ms
10 ms
dc
100 ms 10 ms
100
10
1
0.1
VGS = 10 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NTB5860NL, NTP5860NL, NVB5860NL
TYPICAL CHARACTERISTICS
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
Duty Cycle = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTP5860NLG
TO−220AB
(Pb−Free)
50 Units / Rail
NTB5860NLT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
NVB5860NLT4G*
D2PAK
(Pb−Free)
800 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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5
NTB5860NL, NTP5860NL, NVB5860NL
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
C
E
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
V
W
4
1
2
A
S
3
−T−
SEATING
PLANE
K
J
G
D
M
T B
M
N
R
P
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
17.02
0.67
5.08
0.20
3.05
0.12
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
U
L
M
W
H
3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NTB5860NL, NTP5860NL, NVB5860NL
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
DRAIN
SOURCE
DRAIN
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NTB5860NL/D
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