PD - 97714A
AUTOMOTIVE GRADE
AUIRFS3006-7P
Features
●
●
●
●
●
●
●
●
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
60V
RDS(on) typ.
1.5m:
max.
2.1m:
ID (Silicon Limited) 293A
ID (Package Limited) 240A
D
c
G
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
S
G
S
S
S
S
D2Pak 7 Pin
Absolute Maximum Ratings
G
D
S
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
Parameter
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
d
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
d
f
d
e
c
c
293
207
240
1172
375
2.5
± 20
303
See Fig. 14, 15, 22a, 22b,
11
-55 to + 175
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
dv/dt
TJ
TSTG
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
Thermal Resistance
Symbol
RJC
RJA
Parameter
kl
Junction-to-Case
Junction-to-Ambient (PCB Mount)
j
Typ.
Max.
Units
–––
–––
0.4
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
12/2/11
AUIRFS3006-7P
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
RG(int)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Drain-to-Source Leakage Current
60
–––
–––
2.0
290
–––
0.07
1.5
–––
–––
–––
–––
2.1
4.0
–––
–––
2.1
–––
–––
–––
–––
–––
20
250
100
-100
–––
–––
–––
–––
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
m VGS = 10V, ID = 168A
V VDS = VGS, ID = 250μA
S VDS = 25V, ID = 168A
g
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
μA
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
IS
i
h
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Parameter
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 240A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.021mH
RG = 25, IAS = 168A, VGS =10V. Part not recommended for use
above this value .
ISD 168A, di/dt 1410 A/μs, VDD V(BR)DSS, TJ 175°C.
2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
37
60
140
14
61
118
69
8850
1007
525
1460
1915
300
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
ID = 168A
VDS = 30V
nC
VGS = 10V
ID = 168A, VDS =0V, VGS = 10V
VDD = 39V
ID = 168A
ns
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz (See Fig 5)
VGS = 0V, VDS = 0V to 48V (See Fig 11)
VGS = 0V, VDS = 0V to 48V
g
g
i
h
Min. Typ. Max. Units
–––
–––
––– 293
–––
c
1172
d
Conditions
MOSFET symbol
A
showing the
integral reverse
D
G
S
p-n junction diode.
––– –––
1.3
V TJ = 25°C, IS = 168A, VGS = 0V
TJ = 25°C
VR = 51V,
–––
44
–––
ns
T
=
125°C
IF = 168A
–––
48
–––
J
di/dt = 100A/μs
TJ = 25°C
–––
51
–––
nC
TJ = 125°C
–––
62
–––
––– 2.03 –––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
g
Pulse width 400μs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN-994 echniques refer to application note #AN-994.
R is measured at TJ approximately 90°C.
RJC value shown is at time zero.
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AUIRFS3006-7P
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
D2Pak 7 Pin
MSL1
Class M4 (+/- 800V)†††
AEC-Q101-002
ESD
Human Body Model
Class H3A (+/- 6000V)†††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)†††
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRFS3006-7P
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
10
1
3.5V
60μs PULSE WIDTH
100
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
3.5V
10
60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.1
1
0.1
1
10
100
0.1
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
V DS, Drain-to-Source Voltage (V)
T J = 175°C
100
T J = 25°C
10
1
VDS = 25V
60μs PULSE WIDTH
0.1
2
3
4
5
6
1.5
1.0
-60 -40 -20 0 20 40 60 80 100120140160180
Fig 4. Normalized On-Resistance vs. Temperature
16.0
VGS, Gate-to-Source Voltage (V)
ID= 168A
C oss = C ds + C gd
Ciss
Coss
Crss
1000
2.0
T J , Junction Temperature (°C)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
10000
VGS = 10V
0.5
Fig 3. Typical Transfer Characteristics
100000
ID = 168A
7
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
V DS, Drain-to-Source Voltage (V)
1000
100
VDS= 48V
VDS= 30V
12.0
8.0
4.0
0.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
1
0
40
80
120
160
200
240
280
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS3006-7P
10000
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
100
1msec
LIMITED BY PACKAGE
10
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1.0
0.1
0.0
0.4
0.8
1.2
1.6
2.0
0.1
VSD, Source-to-Drain Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
350
Limited By Package
ID, Drain Current (A)
300
250
200
150
100
50
0
50
75
100
125
10
150
175
80
Id = 5mA
75
70
65
60
55
-60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
1400
EAS , Single Pulse Avalanche Energy (mJ)
2.5
ID
35A
70A
BOTTOM 168A
1200
2.0
TOP
1000
Energy (μJ)
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
25
1
VDS, Drain-to-Source Voltage (V)
1.5
1.0
0.5
800
600
400
200
0
0.0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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60
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
AUIRFS3006-7P
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
J
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
R1
R1
J
1
R2
R2
R3
R3
C
2
1
2
3
3
Ci= iRi
Ci iRi
1E-005
Ri (°C/W) i (sec)
R4
R4
0.0001
4
4
0.0062
0.000005
0.0431
0.000045
0.1462
0.001067
0.2047
0.010195
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
350
300
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 168A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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AUIRFS3006-7P
20
ID = 250μA
ID = 1.0mA
ID = 1.0A
4.0
IF = 112A
V R = 51V
16
TJ = 25°C
TJ = 125°C
3.5
3.0
IRR (A)
VGS(th), Gate threshold Voltage (V)
4.5
2.5
12
8
2.0
4
1.5
0
1.0
-75 -50 -25
0
0
25 50 75 100 125 150 175
200
600
800
1000
1200
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
20
600
16
IF = 168A
V R = 51V
500
TJ = 25°C
TJ = 125°C
IF = 112A
V R = 51V
400
TJ = 25°C
TJ = 125°C
12
QRR (A)
IRR (A)
400
diF /dt (A/μs)
T J , Temperature ( °C )
8
300
200
4
100
0
0
0
200
400
600
800
1000
1200
0
200
diF /dt (A/μs)
400
600
800
1000
1200
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
QRR (A)
600
500
IF = 168A
V R = 51V
400
TJ = 25°C
TJ = 125°C
300
200
100
0
0
200
400
600
800
1000
1200
diF /dt (A/μs)
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Fig. 20 - Typical Stored Charge vs. dif/dt
7
AUIRFS3006-7P
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width µs
Duty Factor
td(on)
Fig 23a. Switching Time Test Circuit
tr
t d(off)
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50K
12V
tf
.2F
.3F
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
8
Fig 24a. Gate Charge Test Circuit
Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRFS3006-7P
D2Pak (TO-263CB) 7 Long Leads Package Outline
Dimensions are shown in milimeters (inches)
D2Pak - 7 Pin Part Marking Information
Part Number
AUFS3006-7P
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
AUIRFS3006-7P
D2Pak - 7 Pin Tape and Reel
Dimensions are shown in milimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
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AUIRFS3006-7P
Ordering Information
Base part number
Package Type
AUIRFS3006-7P
D2Pak 7 Pin
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Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
800
800
AUIRFS3006-7P
AUIRFS3006-7TRR
AUIRFS3006-7TRL
11
AUIRFS3006-7P
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corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or
services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
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