DMP6250SE 60V P-CHANNEL ENHANCEMENT MODE MOSFET INFORMATION ADVANCE PRODUCT NEW Product Summary RDS(ON) Max ID TA = +25C 250m @ VGS = -10V -2.1A 300m @ VGS = -4.5V -1.9A BVDSS -60V Features and Benefits Description This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Mechanical Data Motor Control DC-DC Converters Power Management Functions Uninterrupted Power Supply Low Gate Drive Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.112 grams (Approximate) D SOT223 G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMP6250SE-13 Notes: Qualification Standard Case SOT223 Packaging 2,500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information YWW P6250 DMP6250SE Document Number DS36696 Rev. 2 - 2 = Manufacturer’s Marking P6250 = Marking Code YWW = Date Code Marking Y or Y= Year (ex: 7 = 2017) WW = Week (01 to 53) 1 of 7 www.diodes.com September 2017 © Diodes Incorporated DMP6250SE Maximum Ratings (@TA = +25°C, unless otherwise specified.) INFORMATION ADVANCE PRODUCT NEW Characteristic Symbol VDSS VGS Value -60 20 Unit V V TA = +25°C TA = +70°C ID -2.1 -1.7 A TC = +25°C TC = +70°C ID -6.1 -4.9 A IS IDM IAS EAS -1.8 -11 -12 8 A A A mJ Symbol Value Unit Drain-Source Voltage Gate-Source Voltage (Note 5) Continuous Drain Current (Note 6) VGS = -10V Maximum Body Diode Continuous Current Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Single Pulsed Avalanche Current (Note 7) L = 0.1mH Single Pulsed Avalanche Energy (Note 7) L = 0.1mH Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic TA = +25°C TA = +70°C Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics PD RθJA PD RθJC TJ, TSTG TC = +25°C 1.8 1.1 69 14 8.7 -55 to +150 W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 -1 100 V µA nA ID = -250µA, VGS = 0V VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) -1 RDS(ON) mΩ VSD -3 250 250 300 300 -1.2 V Static Drain-Source On-Resistance 128 128 156 158 VDS= VGS, ID = -250µA VGS = -10V, ID = -1.0A VGS = -10V, ID = -1.9A VGS = -4.5V, ID = -0.5A VGS = -4.5V, ID = -1.5A VGS = 0V, IS = -2.0A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 551 25.7 19.1 12.1 4.8 9.7 1.5 1.6 6.3 10.3 91.4 39.8 9.2 3.9 pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V Test Condition VDS = -30V, VGS = 0V f= 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -30V, ID = -2A VDS = -30V, VGS = -10V, RG = 50Ω, ID = -1A IS = -1A, di/dt= 100A/µs 5. AEC-Q101 VGS maximum is 16V. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. For design aid only, not subject to production testing. DMP6250SE Document Number DS36696 Rev. 2 - 2 2 of 7 www.diodes.com September 2017 © Diodes Incorporated DMP6250SE 10 8 VGS = -10V VDS = -5.0V 7 VGS = -4.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -4.5V 6 4 2 6 5 4 3 TA = 150C 2 0 TA = 125C TA = 25C TA = -55C VGS = -2.5V 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0 5 0 1 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.4 0.36 0.32 0.28 VGS = -4.5V 0.24 0.2 VGS = -10V 0.16 0.12 0.08 0.04 00 2 4 6 8 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage ID = -1.0A 0.45 0.4 0.35 0.3 0.25 0.2 0.15 ID = -0.5A 0.1 0.05 10 0.5 0 0 2 4 6 8 10 12 14 16 18 -V GS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 1.8 VGS = -10V VGS = -10V ID = -1.0A 0.45 TA = 150C 0.4 0.35 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 TA = 85C VGS = -3.0V 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () INFORMATION ADVANCE PRODUCT NEW 8 TA = 125C 0.3 TA = 85 C 0.25 TA = 25 C 0.2 0.15 TA = -55C 0.1 1.6 1.4 VGS = -4.5V ID = -0.5A 1.2 1 0.8 0.05 0 0 1 2 3 4 5 6 7 -ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP6250SE Document Number DS36696 Rev. 2 - 2 8 3 of 7 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature September 2017 © Diodes Incorporated 2.6 )V ( E G A T L O V D L O H S E R H T E T A G , )H VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () 0.4 0.35 0.3 VGS = -4.5V ID = -0.5A 0.25 VGS = -10V ID = -1.0A 0.2 0.15 0.1 T (S G 0.05 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 9 -ID =1mA 2 -ID = 250µA 1.8 1.6 1.4 1.2 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature Ciss VGS = 0V CT, JUNCTION CAPACITANCE (pF) -IS, SOURCE CURRENT (A) 2.2 1000 10 ) A ( T N E R R U C E C R U O S ,S -I 2.4 V 0 -50 8 7 6 5 TA = 150°C 4 TA = 85°C 3 TA = 125°C 2 TA = 25°C f = 1MHz 100 Coss Crss 1 TA = -55°C 0 0 10 0 0.3 0.6 0.9 1.2 1.5 -VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 100 5 10 15 20 25 30 35 -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 RDS(ON) Limited 8 )A 10 ( T N E R R U 1 C DC N IA PW= 10s R PW= 1s D PW= 100ms ,D I- 0.1 T PW = 10ms = 150° C J(max) -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) INFORMATION ADVANCE PRODUCT NEW DMP6250SE 6 VDS = -30V ID = -2A 4 2 0 TA= 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP6250SE Document Number DS36696 Rev. 2 - 2 10 0.01 0.1 4 of 7 www.diodes.com PW = 1ms P W = 100µs 1 10 -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 September 2017 © Diodes Incorporated DMP6250SE 1 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE INFORMATION ADVANCE PRODUCT NEW D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 100癈 /W 100°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 DMP6250SE Document Number DS36696 Rev. 2 - 2 0.001 0.01 0.1 1 t1, t1,PULSE PULSEDURATION DURATIONTIMES TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 September 2017 © Diodes Incorporated DMP6250SE Package Outline Dimensions INFORMATION ADVANCE PRODUCT NEW Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b 0° e A1 7° 7° A 0° -1 SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 X1 Y1 C1 Y2 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y X DMP6250SE Document Number DS36696 Rev. 2 - 2 C 6 of 7 www.diodes.com September 2017 © Diodes Incorporated DMP6250SE INFORMATION ADVANCE PRODUCT NEW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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