DMT6018LDR DUAL N CHANNEL ENHANCEMENT MODE MOSFET Device BVDSS N-Channel 60V Features RDS(ON) MAX ID MAX TA = +25°C 17mΩ @ VGS = 10V 8.8A 26mΩ @ VGS = 4.5V 6.9A This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Description Power Management Functions Analog Switch Case: V-DFN3030-8 (Type H) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu Over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.02 grams (Approximate) D1 D2 V-DFN3030-8 (Type H) S2 S2 S2 G2 G1 D2 D1 S1 S1 S1 G2 S1 G1 S2 Pin 1 Top View Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number DMT6018LDR-7 DMT6018LDR-13 Notes: Case V-DFN3030-8 (Type H) V-DFN3030-8 (Type H) Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCED INFORMATION Product Summary T18 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 for 2016) WW = Week Code (01 to 53) T18 DMT6018LDR Document number: DS36808 Rev. 2 - 2 1 of 6 www.diodes.com October 2016 © Diodes Incorporated DMT6018LDR Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS ADVANCED INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 60 ±20 8.8 7.1 ID A 11.4 9.1 3 50 8 32 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current (Note 7) L = 1mH Avalanche Energy (Note 7) L = 1mH Unit V V IS IDM IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Value 1.1 0.7 108 65 1.9 1.2 66 40 11.4 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 48V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) 1.0 RDS(ON) - mΩ VSD - 3.0 17 26 - V Static Drain-Source On-Resistance 13 20 0.75 VDS = VGS, ID = 250μA VGS = 10V, ID = 8.2A VGS = 4.5V, ID = 6.7A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) - - pF pF pF Ω nC nC nC nC ns ns ns tF tRR QRR - 869 226 15 1.1 6.2 13.9 3.0 1.9 3.5 4.6 10.8 3.5 - ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: 20.3 11.4 V Test Condition VDS = 30V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 30V, ID = 8.2A VDD = 30V, VGS = 10V, ID = 8.2A, Rg = 6Ω IF = 8.2A, di/dt = 100A/μs IF = 8.2A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMT6018LDR Document number: DS36808 Rev. 2 - 2 2 of 6 www.diodes.com October 2016 © Diodes Incorporated DMT6018LDR 30.0 30 VGS = 10V VGS = 4.0V VDS = 5.0V VGS = 4.5V )A ( 20 T N E R R U 15 C N IA R 10 D ,D I 5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 20.0 15.0 VGS = 3.5V 10.0 5.0 VGS = 2.8V T A = 85°C TA = 25°C TA = -55°C 0.50 1.00 1.50 2.00 2.50 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 3.00 VGS = 4.5V VGS = 10V 0.01 0.001 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TA = 125°C VGS = 3.0V 0.1 0.05 TA = 150°C 0 0.0 0.00 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.10 0.09 0.08 0.07 0.06 0.05 0.04 ID = 6.7A 0.03 0.02 ID = 8.2A 0.01 0.00 30 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 2 VGS = 4.5V 0.045 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCED INFORMATION 25.0 TA = 150癈 150°C TA = 125° 125癈C 0.035 0.03 T A = 85° 85癈C 0.025 VGS = 4.5V ID = 5A 1.2 T A = 25° 25癈C 0.02 VGS = 10V ID = 10A 1.6 T A = -55癈 -55°C 0.015 0.8 0.01 0.005 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMT6018LDR Document number: DS36808 Rev. 2 - 2 30 3 of 6 www.diodes.com 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature October 2016 © Diodes Incorporated 2.8 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.05 0.045 0.04 0.035 VGS = 4.5V ID = 5A 0.03 0.025 0.02 0.015 VGS = 10 V ID = 10A 0.01 0.005 2.6 2.4 2.2 1.8 ID = 250礎 A 1.6 1.4 1.2 1 0.8 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 30 ID = 1mA 2 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Junction Ambient Temperature CT, JUNCTION CAPACITANCE (pF) 10000 25 C iss IS, SOURCE CURRENT (A) 1000 20 15 TA = 150° 150癈C TA = 125° 125癈C 10 TA = 85° 85癈 C TA = 25° 25癈 C 5 Coss 100 Crss 10 TA = -55° -55癈 C f = 1MHz 0 1 0 0 0.3 0.6 0.9 1.2 1.5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 24 100 10 PW =100µs RDS(ON) Limited 8 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCED INFORMATION DMT6018LDR VDS = 30V ID = 8.2A 6 4 2 0 0 3 6 9 12 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMT6018LDR Document number: DS36808 Rev. 2 - 2 15 10 1 PW =1ms PW =10ms 0.1 PW =100ms TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS= 10V PW =1s PW =10s DC 0.01 0.1 4 of 6 www.diodes.com 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 October 2016 © Diodes Incorporated DMT6018LDR r(t), TRANSIENT THERMAL RESISTANCE ADVANCED INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA °C/W RJA = 72癈 /W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. V-DFN3030-8 (Type H) A3 A1 A Seating Plane D e Z1 K E K1 E2 D2 L Z DMT6018LDR Document number: DS36808 Rev. 2 - 2 b(8x) 5 of 6 www.diodes.com V-DFN3030-8 (Type H) Dim Min Max Typ A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 BSC b 0.27 0.37 0.32 D 2.95 3.05 3.00 D2 2.50 2.70 2.60 e 0.65 BSC E 2.95 3.05 3.00 E2 0.59 0.79 0.69 L 0.30 0.40 0.35 K 0.28 BSC K1 0.36 BSC Z 0.365 BSC Z1 0.24 BSC All Dimensions in mm October 2016 © Diodes Incorporated DMT6018LDR Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. V-DFN3030-8 (Type H) X3 C ADVANCED INFORMATION G Dimensions Value (in mm) C 0.650 G 0.180 G1 0.260 X 0.420 X1 1.920 X2 2.700 X3 2.495 Y 0.550 Y1 0.790 Y2 3.300 X2 Y1 Y2 G1 Y1 Y X1 X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com DMT6018LDR Document number: DS36808 Rev. 2 - 2 6 of 6 www.diodes.com October 2016 © Diodes Incorporated