Microchip MCP14A0153 1.5a dual mosfet driver with low threshold input and enable Datasheet

MCP14A0153/4/5
1.5A Dual MOSFET Driver
with Low Threshold Input And Enable
Features
General Description
• High Peak Output Current: 1.5A (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- 1000 pF in 11.5 ns (typical)
• Short Delay Times: 25 ns (tD1), 24 ns (tD2) (typical)
• Low Supply Current: 750 µA (typical)
• Low-Voltage Threshold Input and Enable with
Hysteresis
• Latch-Up Protected: Withstands 500 mA Reverse
Current
• Space-Saving Packages:
- 8-Lead MSOP
- 8-Lead SOIC
- 8-Lead 2x3 TDFN
The MCP14A0153/4/5 devices are high-speed dual
MOSFET drivers that are capable of providing up to
1.5A of peak current while operating from a single 4.5V
to 18V supply. There are three output configurations
available; dual inverting (MCP14A0153), dual
noninverting (MCP14A0154) and complementary
(MCP14A0155).
These
devices
feature
low
shoot-through current, matched rise and fall times, and
short propagation delays which make them ideal for
high switching frequency applications.
Applications
•
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Level Translator
Motor and Solenoid Drive
The MCP14A0153/4/5 family of devices offer
enhanced control with Enable functionality. The
active-high Enable pins can be driven low to drive the
corresponding outputs of the MCP14A0153/4/5 low,
regardless of the status of the Input pin. An integrated
pull-up resistor allows the user to leave the Enable pins
floating for standard operation.
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
can accept up to 500 mA of reverse current being
forced back into their outputs without damage or logic
upset. All terminals are fully protected against
electrostatic discharge (ESD) up to 2 kV (HBM) and
200 V (MM).
Package Types
MCP14A0153
MSOP/SOIC
EN A 1
IN A 2
GND 3
IN B 4
MCP14A0155
MCP14A0154
8
7
6
5
MCP14A0153
OUT A
VDD
OUT A
OUT A
OUT B
OUT B
OUT B
MCP14A0154
2×3 TDFN *
EN A 1
EN B
IN A 2
GND 3
IN B 4
MCP14A0155
8 EN B
EP
9
7 OUT A
6 VDD
5 OUT B
OUT A
OUT A
OUT B
OUT B
* Includes Exposed Thermal Pad (EP); see Table 3-1.
 2015 Microchip Technology Inc.
DS20005470A-page 1
MCP14A0153/4/5
Functional Block Diagram
VDD
Internal
Pull-Up
Enable
VREF
GND
Inverting
Output
VDD
Input
VREF
Noninverting
GND
MCP14A0153 Dual Inverting
MCP14A0154 Dual Noninverting
MCP14A0155 One Inverting, One Noninverting
DS20005470A-page 2
 2015 Microchip Technology Inc.
MCP14A0153/4/5
1.0
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD, Supply Voltage............................................. +20V
VIN, Input Voltage........... (VDD + 0.3V) to (GND - 0.3V)
VEN, Enable Voltage....... (VDD + 0.3V) to (GND - 0.3V)
Package Power Dissipation (TA = +50°C)
8L MSOP ...................................................... 0.63W
8L SOIC ........................................................ 1.00W
8L 2 x 3 TDFN............................................... 1.86W
ESD Protection on all Pins .........................2 kV (HBM)
....................................................................200V (MM)
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C, with 4.5V  VDD  18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input Voltage Range
VIN
GND - 0.3
—
VDD + 0.3
V
Logic ‘1’ High Input Voltage
VIH
2.0
1.6
—
V
Logic ‘0’ Low Input Voltage
VIL
—
1.2
0.8
V
VHYST(IN)
—
0.4
—
V
IIN
-1
—
+1
µA
Enable Voltage Range
VEN
GND - 0.3V
—
VDD + 0.3
V
Logic ‘1’ High Enable Voltage
VEH
2
1.6
—
V
Logic ‘0’ Low Enable Voltage
VEL
—
1.2
0.8
V
VHYST(EN)
—
0.4
—
V
RENBL
—
1.8
—
MΩ
VDD = 18V, EN = GND
Enable Input Current
IEN
—
10
—
µA
VDD = 18V, EN = GND
Propagation Delay
tD3
—
25
32
ns
VDD = 18V, VEN = 5V,
see Figure 4-3, (Note 1)
Propagation Delay
tD4
—
24
31
ns
VDD = 18V, VEN = 5V,
see Figure 4-3, (Note 1)
VOH
VDD - 0.025
—
—
V
IOUT = 0A
Low Output Voltage
VOL
—
—
0.025
V
IOUT = 0A
Output Resistance, High
ROH
—
4.5
6.5
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
3.0
4.5
Ω
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
1.5
—
A
VDD = 18V (Note 1)
Latch-Up Protection Withstand
Reverse Current
IREV
0.5
—
—
A
Duty cycle  2%, t  300 µs
(Note 1)
tR
—
11.5
18.5
ns
VDD = 18V, CL = 1000 pF,
see Figure 4-1, Figure 4-2
(Note 1)
Input
Input Voltage Hysteresis
Input Current
0V  VIN  VDD
Enable
Enable Voltage Hysteresis
Enable Pin Pull-Up Resistance
Output
High Output Voltage
Switching Time (Note 1)
Rise Time
Note 1:
Tested during characterization, not production tested.
 2015 Microchip Technology Inc.
DS20005470A-page 3
MCP14A0153/4/5
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, TA = +25°C, with 4.5V  VDD  18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Fall Time
tF
—
10
17
ns
VDD = 18V, CL = 1000 pF,
see Figure 4-1, Figure 4-2
(Note 1)
Delay Time
tD1
—
25
32
ns
VDD = 18V, VIN = 5V,
see Figure 4-1, Figure 4-2
(Note 1)
tD2
—
24
31
ns
VDD = 18V, VIN = 5V,
see Figure 4-1, Figure 4-2
(Note 1)
VDD
4.5
—
18
V
IDD
—
675
1120
µA
VINA/B = 3V, VENA/B = 3V
IDD
—
715
1160
µA
VINA/B = 0V, VENA/B = 3V
IDD
—
715
1160
µA
VINA/B = 3V, VENA/B = 0V
IDD
—
750
1200
µA
VINA/B = 0V, VENA/B = 0V
Power Supply
Supply Voltage
Power Supply Current
Note 1:
Tested during characterization, not production tested.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) (Note 1)
Electrical Specifications: Unless otherwise indicated, over the operating range with 4.5V  VDD  18V.
Parameters
Sym.
Min.
Typ.
Max.
Input Voltage Range
VIN
Logic ‘1’ High Input Voltage
VIH
Logic ‘0’ Low Input Voltage
Units
Conditions
GND - 0.3V
—
VDD + 0.3
V
2.0
1.6
—
V
VIL
—
1.2
1.8
V
VHYST(IN)
—
0.4
—
V
IIN
-10
—
+10
µA
Enable Voltage Range
VEN
GND - 0.3V
—
VDD + 0.3
V
Logic ‘1’ High Enable Voltage
VEH
2.0
1.6
—
V
Logic ‘0’ Low Enable Voltage
VEL
—
1.2
1.8
V
VHYST(EN)
—
0.4
—
V
Enable Input Current
IEN
—
12
—
µA
VDD = 18V, EN = GND
Propagation Delay
tD3
—
28
35
ns
VDD = 18V, VEN = 5V, TA = +125°C,
see Figure 4-3
Propagation Delay
tD4
—
27
34
ns
VDD = 18V, VEN = 5V, TA = +125°C,
see Figure 4-3
VOH
VDD - 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
—
9
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
—
6.5
Ω
IOUT = 10 mA, VDD = 18V
Input
Input Voltage Hysteresis
Input Current
0V  VIN  VDD
Enable
Enable Voltage Hysteresis
Output
High Output Voltage
Note 1:
Tested during characterization, not production tested.
DS20005470A-page 4
 2015 Microchip Technology Inc.
MCP14A0153/4/5
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) (Note 1)
Electrical Specifications: Unless otherwise indicated, over the operating range with 4.5V  VDD  18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Rise Time
tR
—
14
21
ns
VDD = 18V, CL = 1000 pF,
TA = +125°C, see Figure 4-1,
Figure 4-2
Fall Time
tF
—
13
20
ns
VDD = 18V, CL = 1000 pF,
TA = +125°C, see Figure 4-1,
Figure 4-2
Delay Time
tD1
—
28
35
ns
VDD = 18V, VIN = 5V, TA = +125°C,
see Figure 4-1, Figure 4-2
tD2
—
27
34
VDD
4.5
—
18
V
IDD
—
—
1520
µA
VIN = 3V, VEN = 3V
IDD
—
—
1560
µA
VIN = 0V, VEN = 3V
IDD
—
—
1560
µA
VIN = 3V, VEN = 0V
IDD
—
—
1600
µA
VIN = 0V, VEN = 0V
Switching Time (Note 1)
VDD = 18V, VIN = 5V, TA = +125°C,
see Figure 4-1, Figure 4-2
Power Supply
Supply Voltage
Power Supply Current
Note 1:
Tested during characterization, not production tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  VDD  18V.
Parameter
Sym.
Min.
Typ.
Max. Units
Specified Temperature Range
TA
-40
—
+125
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
-65
—
+150
°C
Comments
Temperature Ranges
Package Thermal Information
Junction-to-Ambient Thermal Resistance, 8LD MSOP
JA
—
158
—
°C/W Note 1
Junction-to-Ambient Thermal Resistance, 8LD SOIC
JA
—
99.8
—
°C/W Note 1
Junction-to-Ambient Thermal Resistance, 8LD TDFN
JA
—
53.7
—
°C/W Note 1
Junction-to-Top Characterization Parameter, 8LD MSOP
JT
—
2.4
—
°C/W Note 1
Junction-to-Top Characterization Parameter, 8LD SOIC
JT
—
5.9
—
°C/W Note 1
Junction-to-Top Characterization Parameter, 8LD TDFN
JT
—
0.5
—
°C/W Note 1
Junction-to-Board Characterization Parameter, 8LD MSOP
JB
—
115.2
—
°C/W Note 1
Junction-to-Board Characterization Parameter, 8LD SOIC
JB
—
64.8
—
°C/W Note 1
Junction-to-Board Characterization Parameter, 8LD TDFN
JB
—
24.4
—
°C/W Note 1
Note 1:
Parameter is determined using a High K 2S2P 4-Layer board as described in JESD 51-7, as well as
JESD 51-5 for packages with exposed pads.
 2015 Microchip Technology Inc.
DS20005470A-page 5
MCP14A0153/4/5
2.0
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
160
200
180
160
140
120
100
80
60
40
20
0
140
120
Fall Time (ns)
Rise Time (ns)
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V.
10000 pF
6800 pF
3300 pF
5V
100
12V
80
60
40
470 pF
20
1000 pF
18V
0
4
6
8
10
12
14
16
100
18
1000
Supply Voltage (V)
FIGURE 2-4:
Load.
Rise Time vs. Supply
16
200
180
160
140
120
100
80
60
40
20
0
Fall Time vs. Capacitive
VDD = 18V
tR, 1000 pF
14
5V
Time (ns)
Rise Time (ns)
FIGURE 2-1:
Voltage.
12V
18V
12
tF, 1000 pF
10
tR, 470 pF
8
tF, 470 pF
6
4
100
1000
-40 -25 -10
10000
Capacitive Load (pF)
FIGURE 2-2:
Load.
5
20 35 50 65 80 95 110 125
Temperature (°C)
FIGURE 2-5:
Temperature.
Rise Time vs. Capacitive
160
Rise and Fall Time vs.
10000
Crossover Current (µA)
140
Fall Time (ns)
10000
Capacitive Load (pF)
120
100
10000 pF
80
6800 pF
60
40
3300 pF
470 pF
20
1000 pF
0
500 kHz
200 kHz
100 kHz
50 kHz
1000
100
10
1
4
6
8
10
12
14
16
18
4
6
Supply Voltage (V)
FIGURE 2-3:
Voltage.
DS20005470A-page 6
Fall Time vs. Supply
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-6:
Supply Voltage.
Crossover Current vs.
 2015 Microchip Technology Inc.
MCP14A0153/4/5
Input Propagation Delay (ns)
45
Enable Propagation Delay (ns)
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V.
VIN = 5V
40
35
30
tD2
25
tD1
20
4
6
8
10
12
14
16
45
VEN = 5V
40
35
30
tD4
25
tD3
20
18
4
6
8
Supply Voltage (V)
FIGURE 2-7:
Supply Voltage.
Input Propagation Delay vs.
VDD = 18V
35
30
tD2
25
tD1
15
4
6
8
10
12
14
16
VDD = 18V
VIN = 5V
tD1
25
tD2
20
20 35 50 65 80 95 110 125
30
tD4
25
tD3
20
15
6
8
Input Propagation Delay vs.
10
12
14
16
18
Enable Voltage Amplitude (V)
FIGURE 2-11:
Enable Propagation Delay
Time vs. Enable Voltage Amplitude.
30
VDD = 18V
VEN = 5V
tD3
25
tD4
20
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
Temperature (°C)
 2015 Microchip Technology Inc.
18
35
4
Enable Propagation Delay (ns)
Input Propagation Delay (ns)
30
FIGURE 2-9:
Temperature.
16
VDD = 18V
18
FIGURE 2-8:
Input Propagation Delay
Time vs. Input Amplitude.
5
14
40
Input Voltage Amplitude (V)
-40 -25 -10
12
FIGURE 2-10:
Enable Propagation Delay
vs. Supply Voltage.
Enable Propagation Delay (ns)
Input Propogation Delay (ns)
40
20
10
Supply Voltage (V)
FIGURE 2-12:
vs. Temperature.
Enable Propagation Delay
DS20005470A-page 7
MCP14A0153/4/5
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V.
1620
1.8
1.7
VIN = 0V,VEN = 0V
Input Threshold (V)
Quiescent Current (uA)
1600
1580
VIN = 3V,VEN = 0V or VIN = 0V,VEN = 3V
1560
1540
VIN = 3V,VEN = 3V
1520
1500
VIH
1.6
1.5
1.4
1.3
VIL
1.2
1.1
1480
1
1460
4
6
8
10
12
14
16
4
18
6
8
Supply Voltage (V)
FIGURE 2-13:
Quiescent Supply Current
vs. Supply Voltage.
2100
FIGURE 2-16:
Voltage.
VDD = 18V
VIN = 5V,VEN = 0V or VIN = 0V,VEN = 5V
1800
1700
1600
VIN = 0V,VEN = 0V
VIN = 5V,VEN = 5V
1500
Enable Threshold (V)
Quiescent Current (uA)
2000
1900
1400
1300
-40 -25 -10
5
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
14
16
18
VDD = 18V
VEH
VEL
-40 -25 -10
20 35 50 65 80 95 110 125
5
20 35 50 65 80 95 110 125
Temperature (°C)
Quiescent Supply Current
FIGURE 2-17:
Temperature.
VIL
Enable Threshold vs.
1.8
VDD = 18V
VIH
Enable Threshold (V)
Input Threshold (V)
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
12
Input Threshold vs Supply
Temperature (°C)
FIGURE 2-14:
vs. Temperature.
10
Supply Voltage (V)
1.7
VEH
1.6
1.5
1.4
1.3
VEL
1.2
1.1
1
-40 -25 -10
5
20 35 50 65 80 95 110 125
4
6
FIGURE 2-15:
Temperature.
DS20005470A-page 8
Input Threshold vs.
8
10
12
14
16
18
Supply Voltage (V)
Temperature (°C)
FIGURE 2-18:
Voltage.
Enable Threshold vs Supply
 2015 Microchip Technology Inc.
MCP14A0153/4/5
14
13
12
11
10
9
8
7
6
5
4
VIN = 0V (MCP14A0154)
VIN = 5V (MCP14A0154)
Supply Current (mA)
ROH - Output Resistance (Ÿ)
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V.
TA = +125°C
TA = +25°C
4
6
8
10
12
14
16
100
90
80
70
60
50
40
30
20
10
0
18
VDD = 18V
10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF
10
Supply Voltage (V)
FIGURE 2-19:
Output Resistance (Output
High) vs. Supply Voltage.
VIN = 5V (MCP14A0153)
VIN = 0V (MCP14A0154)
8
TA = +125°C
6
4
TA = +25°C
2
0
4
6
8
10
12
14
16
50
45
40
35
30
25
20
15
10
5
0
18
VDD = 12V
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz
100
Supply Voltage (V)
Supply Current (mA)
Supply Current (mA)
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz
1000
Capacitive Load (pF)
FIGURE 2-21:
Supply Current vs.
Capacitive Load (VDD = 18V).
 2015 Microchip Technology Inc.
10000
FIGURE 2-23:
Supply Current vs.
Capacitive Load (VDD = 6V).
VDD = 18V
100
1000
Capacitive Load (pF)
FIGURE 2-20:
Output Resistance (Output
Low) vs. Supply Voltage.
100
90
80
70
60
50
40
30
20
10
0
1000
FIGURE 2-22:
Supply Current vs.
Capacitive Load (VDD = 12V).
Supply Current (mA)
ROL - Output Resistance (Ÿ)
10
100
Switching Frequency (kHz)
10000
50
45
40
35
30
25
20
15
10
5
0
VDD = 12V
10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF
10
100
1000
Switching Frequency (kHz)
FIGURE 2-24:
Supply Current vs.
Frequency (VDD = 18V).
DS20005470A-page 9
MCP14A0153/4/5
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V.
30
Supply Current (mA)
VDD = 6V
25
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz
20
15
10
5
0
100
1000
10000
Capacitive Load (pF)
FIGURE 2-25:
Supply Current vs.
Frequency (VDD = 12V).
Supply Current (mA)
30
VDD = 6V
25
10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF
20
15
10
5
0
10
100
1000
Switching Frequency (kHz)
FIGURE 2-26:
Supply Current vs.
Frequency (VDD = 6V).
Enable Current (µA)
14
13
TA = +125°C
12
11
TA = +25°C
10
9
8
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-27:
Voltage.
DS20005470A-page 10
Enable Current vs. Supply
 2015 Microchip Technology Inc.
MCP14A0153/4/5
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP14A0153, MCP14A0153, MCP14A0153
Symbol
3.1
MSOP/SOIC
1
1
EN A
Enable - Channel A
2
2
IN A
Input - Channel A
3
3
GND
Device Ground
4
4
IN B
Input - Channel B
5
5
OUT B/OUT B
6
6
VDD
7
7
OUT A/OUT A
Output - Channel A
8
8
EN B
Enable - Channel B
EP
—
EP
Output Pins (OUT A/OUT A,
OUT B/OUT B)
The outputs are CMOS push-pull circuits that are
capable of sourcing and sinking 1.5A of peak current
(VDD = 18V). The low output impedance ensures the
gate of the external MOSFET stays in the intended
state even during large transients. This output also has
a reverse current latch-up rating of 500 mA.
3.2
Device Ground Pin (GND)
GND is the device return pin for the input and output
stages. The GND pin should have a low-impedance
connection to the bias supply source return. When the
capacitive load is being discharged, high peak currents
will flow through the ground pin.
3.3
Description
2x3 TDFN
Device Enable Pins (EN A,EN B)
The MOSFET driver device enable pins are
high-impedance inputs featuring low threshold levels.
The enable inputs also have hysteresis between the
high and low input levels, allowing them to be driven
from slow rising and falling signals and to provide noise
immunity. Driving the enable pins below the threshold
will disable the corresponding output of the device,
pulling OUT/OUT low, regardless of the status of the
Input pin. Driving the enable pins above the threshold
allows normal operation of the OUT/OUT pin based on
the status of the Input pin. The enable pins utilize
internal pull up resistors, allowing the pins to be left
floating for standard driver operation.
 2015 Microchip Technology Inc.
Output - Channel B
Supply Input
Exposed Thermal Pad (GND)
3.4
Control Input Pins (IN A,IN B)
The MOSFET driver control inputs are high-impedance
inputs featuring low threshold levels. The Inputs also
have hysteresis between the high and low input levels,
allowing them to be driven from slow rising and falling
signals and to provide noise immunity.
3.5
Supply Input Pin (VDD)
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local capacitor. This bypass
capacitor provides a localized low-impedance path for
the peak currents that are provided to the load.
3.6
Exposed Metal Pad Pin (EP)
The exposed metal pad of the TDFN package is
internally connected to GND. Therefore, this pad
should be connected to a Ground plane to aid in heat
removal from the package.
DS20005470A-page 11
MCP14A0153/4/5
4.0
APPLICATION INFORMATION
4.1
General Information
VDD = 18V
1 μF
MOSFET drivers are high-speed, high-current devices
which are intended to source/sink high-peak currents to
charge/discharge the gate capacitance of external
MOSFETs or Insulated-Gate Bipolar Transistors
(IGBTs). In high frequency switching power supplies,
the Pulse-Width Modulation (PWM) controller may not
have the drive capability to directly drive the power
MOSFET. A MOSFET driver such as the
MCP14A0153/4/5 family can be used to provide
additional source/sink current capability.
4.2
The ability of a MOSFET driver to transition from a
fully-off state to a fully-on state is characterized by the
driver’s rise time (tR), fall time (tF) and propagation
delays (tD1 and tD2). Figure 4-1 and Figure 4-2 show
the test circuit and timing waveform used to verify the
MCP14A0153/4/5 timing.
CL = 1000 pF
½ MCP14A0154
½ MCP14A0155
Input
VIH (Typ.)
0V
CL = 1000 pF
½ MCP14A0153
½ MCP14A0155
5V
Input
VIL (Typ.)
tD1
tF
tD2
tR
90%
Output
0V
FIGURE 4-1:
Waveform.
tR
tD2
10%
Inverting Driver Timing
tF
90%
Output
10%
FIGURE 4-2:
Waveform.
0.1 μF
Output
18V
tD1
18V
4.3
VIH (Typ.)
0V
VIL (Typ.)
0V
VDD = 18V
Input
Output
5V
MOSFET Driver Timing
1 μF
Input
0.1 μF
Noninverting Driver Timing
Enable Function
The enable pins (EN A,EN B) provide additional control
of the output pins (OUT). These pins are active high
and are internally pulled up to VDD so that the pins can
be left floating to provide standard MOSFET driver
operation.
When the enable pin input voltage’s are above the
enable pin high voltage threshold, (VEN_H), the
corresponding output is enabled and allowed to react to
the status of the Input pin. However, when the voltage
applied to the Enable pins falls below the low threshold
voltage (VEN_L), the driver’s corresponding output is
disabled and doesn't respond to changes in the status
of the Input pins. When the driver is disabled, the
output is pulled down to a low state. Refer to Table 4-1
for the Enable pin logic. The threshold voltage levels for
the Enable pin are similar to the threshold voltage
levels of the Input pin, and are TTL compatible.
Hysteresis is provided to help increase the noise
immunity of the enable function, avoiding false triggers
of the enable signal during driver switching.
There are propagation delays associated with the
driver receiving an enable signal and the output
reacting. These propagation delays, tD3 and tD4, are
graphically represented in Figure 4-3.
DS20005470A-page 12
 2015 Microchip Technology Inc.
MCP14A0153/4/5
TABLE 4-1:
4.6
ENABLE PIN LOGIC
EN
IN
OUT
OUT
H
H
L
H
H
L
H
L
L
X
L
L
Power Dissipation
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements, as shown in Equation 4-1.
EQUATION 4-1:
PT = P L + PQ + P CC
5V
Where:
Enable
PT
=
Total power dissipation
VEH (Typ.)
VEL (Typ.)
PL
=
Load power dissipation
PQ
=
Quiescent power dissipation
90%
PCC
=
Operating power dissipation
0V
tD3
tD4
18V
4.6.1
Output
10%
0V
FIGURE 4-3:
4.4
Enable Timing Waveform.
Decoupling Capacitors
Careful PCB layout and decoupling capacitors are
required when using power MOSFET drivers. Large
current is required to charge and discharge capacitive
loads quickly. For example, approximately 720 mA are
needed to charge a 1000 pF load with 18V in 25 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance, it is recommended to
place 1.0 µF and 0.1 µF low ESR ceramic capacitors in
parallel between the driver VDD and GND. These
capacitors should be placed close to the driver to
minimize circuit board parasitics and provide a local
source for the required current.
4.5
PCB Layout Considerations
Proper Printed Circuit Board (PCB) layout is important
in high-current, fast switching circuits to provide proper
device operation and robustness of design. Improper
component placement may cause errant switching,
excessive voltage ringing or circuit latch-up. The PCB
trace loop length and inductance should be minimized
by the use of ground planes or traces under the
MOSFET gate drive signal. Separate analog and
power grounds and local driver decoupling should also
be used.
Placing a ground plane beneath the MCP14A0153/4/5
devices will help as a radiated noise shield, as well as
providing some heat sinking for power dissipated within
the device.
 2015 Microchip Technology Inc.
CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of the frequency, total capacitive load
and supply voltage. The power lost in the MOSFET
driver for a complete charging and discharging cycle of
a MOSFET is shown in Equation 4-2.
EQUATION 4-2:
P
L
= fC V
T
DD
2
Where:
f
=
CT
=
Total load capacitance
VDD
=
MOSFET driver supply voltage
4.6.2
Switching frequency
QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw depends on the state of the Input and
Enable
pins.
See
Section 1.0
“Electrical
Characteristics” for typical quiescent current draw
values in different operating states. The quiescent
power dissipation is shown in Equation 4-3.
EQUATION 4-3:
P
Q
= I
QH
D+I
QL
 1 – D  V
DD
Where:
IQH
=
Quiescent current in the High state
D
=
Duty cycle
IQL
=
Quiescent current in the Low state
VDD
=
MOSFET driver supply voltage
DS20005470A-page 13
MCP14A0153/4/5
4.6.3
OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because, for a very
short period of time, both MOSFETs in the output stage
are on simultaneously. This crossover current leads to
a power dissipation described in Equation 4-4.
EQUATION 4-4:
P
CC
=
V DD  I CO
Where:
ICO
=
Crossover current
VDD
=
MOSFET driver supply voltage
DS20005470A-page 14
 2015 Microchip Technology Inc.
MCP14A0153/4/5
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
8-Lead MSOP (3x3 mm)
Example
Device
Code
MCP14A0153T-E/MS
A0153
MCP14A0154T-E/MS
A0154
MCP14A0155T-E/MS
A0155
Note:
Applies to 8-Lead MSOP
8-Lead SOIC (3.90 mm)
Example
Code
14A0153
MCP14A0153T-E/SN
14A0153
e^^3 1542
MCP14A0154T-E/SN
14A0154
MCP14A0155T-E/SN
14A0155
256
Device
NNN
Note:
Applies to 8-Lead SOIC
8-Lead TDFN (2x3x0.75 mm)
Example
Device
Code
MCP14A0153T-E/MNY
ACU
MCP14A0154T-E/MNY
ACM
MCP14A0155T-E/MNY
ACV
Note:
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
A0153
542256
ACU
542
25
Applies to 8-Lead 2x3 TDFN
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will be carried over
to the next line, thus limiting the number of available characters for customer-specific
information.
 2015 Microchip Technology Inc.
DS20005470A-page 15
MCP14A0153/4/5
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005470A-page 16
 2015 Microchip Technology Inc.
MCP14A0153/4/5
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2015 Microchip Technology Inc.
DS20005470A-page 17
MCP14A0153/4/5
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005470A-page 18
 2015 Microchip Technology Inc.
MCP14A0153/4/5
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2015 Microchip Technology Inc.
DS20005470A-page 19
MCP14A0153/4/5
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005470A-page 20
 2015 Microchip Technology Inc.
MCP14A0153/4/5
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 2015 Microchip Technology Inc.
DS20005470A-page 21
MCP14A0153/4/5
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005470A-page 22
 2015 Microchip Technology Inc.
MCP14A0153/4/5
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2015 Microchip Technology Inc.
DS20005470A-page 23
MCP14A0153/4/5
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! "# $% &"' "" *$ + %
;<<&&&! !< $
DS20005470A-page 24
 2015 Microchip Technology Inc.
MCP14A0153/4/5
APPENDIX A:
REVISION HISTORY
Revision A (December 2015)
• Original release of this document
 2015 Microchip Technology Inc.
DS20005470A-page 25
MCP14A0153/4/5
NOTES:
DS20005470A-page 26
 2015 Microchip Technology Inc.
MCP14A0153/4/5
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
[X](1)
–X
Device Tape and Reel Temperature
Range
Device:
/XX
Package
MCP14A0153:
MCP14A0154:
MCP14A0155:
MCP14A0153T:
High-Speed MOSFET Driver
High-Speed MOSFET Driver
High-Speed MOSFET Driver
High-Speed MOSFET Driver
(Tape and Reel)
MCP14A0154T: High-Speed MOSFET Driver
(Tape and Reel)
MCP14A0155T: High-Speed MOSFET Driver
(Tape and Reel)
Temperature Range:
E
Package:
MS
= Plastic Micro Small Outline Package (MSOP), 8-lead
SN
= Plastic Small Outline Package (SOIC), 8-lead
MNY* = Plastic Dual Flat, No Lead Package 2 x 3 x 0.75 mm Body (TDFN) 8-lead
*Y
= -40°C to +125°C (Extended)
= Nickel palladium gold manufacturing designator.
Only available on the SC70 and TDFN package.
 2015 Microchip Technology Inc.
Examples:
a) MCP14A0153T-E/MS: Tape and Reel,
Extended temperature,
8LD MSOP package
b) MCP14A0153-E/MS:
Extended temperature,
8LD MSOP package
c) MCP14A0154T-E/SN:
Tape and Reel
Extended temperature,
8LD SOIC package
d) MCP14A0154-E/SN:
Extended temperature,
8LD SOIC package
e) MCP14A0155T-E/MNY: Tape and Reel
Extended temperature,
8LD TDFN package
Note 1:
Tape and Reel identifier only appears in
the catalog part number description. This
identifier is used for ordering purposes and
is not printed on the device package.
Check with your Microchip Sales Office for
package availability with the Tape and
Reel option.
DS20005470A-page 27
MCP14A0153/4/5
NOTES:
DS20005470A-page 28
 2015 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer,
LANCheck, MediaLB, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC,
SST, SST Logo, SuperFlash and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
The Embedded Control Solutions Company and mTouch are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo,
CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit
Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet,
KleerNet logo, MiWi, motorBench, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, RightTouch logo, REAL ICE, SQI, Serial Quad I/O,
Total Endurance, TSHARC, USBCheck, VariSense,
ViewSpan, WiperLock, Wireless DNA, and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2015, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
ISBN: 978-1-5224-0076-9
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2015 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS20005470A-page 29
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DS20005470A-page 30
 2015 Microchip Technology Inc.