Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 1/9 CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTB080P06Q8 BVDSS ID@ VGS=-10V, TA=25°C -60V RDSON @VGS=-10V, ID=-4A -4A 80.3mΩ(typ.) RDSON @VGS=-4.5V, ID=-3A 108mΩ(typ.) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package Equivalent Circuit Outline MTB080P06Q8 SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTB080P06Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB080P06Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=6mH, ID=-4A, VDD=-15V Repetitive Avalanche Energy @ L=0.05mH TA=25℃ Total Power Dissipation TA=70℃ Operating Junction and Storage Temperature Range Symbol Limits VDS VGS -60 ±20 -4 -3.2 -18 *1 -4 48 2.5 *2 3.1 *3 2 *3 -55~+150 ID IDM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 25 40 *3 Unit °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 GFS Dynamic Ciss Coss Crss *1 MTB080P06Q8 Min. Typ. Max. -60 -1.0 - 80.3 108 10 -2.5 ±100 -1 -10 105 145 - - 503 54 37 - Unit Test Conditions S VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0V VDS=-60V, VGS=0V VDS=-48V, VGS=0V, Tj=85°C VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A VDS=-10V, ID=-10A pF VDS=-25V, VGS=0V, f=1MHz V nA μA mΩ CYStek Product Specification CYStech Electronics Corp. Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 3/9 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Qg (VGS=10V) *1, 2 Qg (VGS=4.5V) *1, 2 Qgs *1, 2 Qgd *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. - Typ. 6.4 17 25.2 7.2 11.4 6.3 2.1 3.2 6.6 Max. - - -0.84 12.6 8 -4 -16 -1.2 - Unit Test Conditions ns VDD=-30V, ID=-4A, VGS=-10V, RG=3Ω nC VDS=-48V, ID=-4A, VGS=-10V Ω f=1MHz A V ns nC IS=-4A, VGS=0V IF=-4A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTB080P06Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 4/9 Typical Characteristics Normalized Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 -BVDSS, Normalized Drain-Source Breakdown Voltage 18 -I D, Drain Current (A) 16 -10V, -9V,-8V,-7V,-6V,-5V 14 12 -4V 10 8 -3.5V 6 4 VGS=-3V 1.2 1 0.8 ID=-250μA, VGS=0V 2 0.6 0 0 2 4 6 8 -VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Source Drain Current vs Source-Drain Voltage 1000 R DS(on) , Static Drain-Source On-State Resistance(mΩ) 1.2 -VSD, Source-Drain Voltage(V) VGS=0V VGS=-4.5V 100 VGS=-10V Tj=25°C 1 0.8 0.6 Tj=150°C 0.4 0.2 10 0.1 1 -ID, Drain Current(A) 0 10 2 4 6 8 -IS, Source Drain Current(A) 10 Normalized Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 500 2.2 R DS(on) , Normalized Static DrainSource On-State Resistance R DS(on) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 450 ID=-4A 400 350 300 250 200 150 100 2 1.6 1.4 1.2 1 0.8 0.6 50 0.4 0 0.2 0 MTB080P06Q8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 VGS=-10V, ID=-4A 1.8 RDS(ON) @Tj=25°C : 80.3mΩ typ. -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Normalized Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.6 10000 1000 -VGS(th) , Normalized Threshold Voltage Capacitance---(pF) 1.4 Ciss C oss 100 Crss 1.2 ID=-1mA 1 0.8 0.6 ID=-250μA 0.4 0.2 10 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 100 10 1 VDS=-10V Pulsed TA=25°C 0.1 8 VDS=-30V VDS=-12V 6 4 VDS=-48V 2 ID=-4A 0 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 10 0 2 4 6 8 Qg, Total Gate Charge(nC) 10 12 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 5.0 -I D, Maximum Drain Current(A) 100 100μs -I D, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 1ms 10ms 1 100ms 1s 0.1 TA=25°C, Tj=150°C, VGS=-10V RθJA=40°C/W, Single Pulse DC 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 TA=25°C, VGS=-10V, RθJA=40°C/W 0.5 0.0 0.01 0.1 MTB080P06Q8 1 10 100 -VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics 300 18 VDS=-10V TJ(MAX) =150°C TA=25°C RθJA=40°C/W 250 14 12 Power (W) -I D, Drain Current(A) 16 Single Pulse Power Rating, Junction to Ambient (Note on page 2) 10 8 200 150 100 6 4 50 2 0 0 2 4 6 -VGS, Gate-Source Voltage(V) 8 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves r(t), Normalized Transient Thermal Resistance 10 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.0001 MTB080P06Q8 0.001 0.01 0.1 1 t1, Square Wave Pulse Duration(s) 10 100 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB080P06Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB080P06Q8 CYStek Product Specification Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name B080 P06 Year Code : Last digit of Christian year Month Code : A, B, C, D, E, F, G, H, J, K, L, and M represent Jan thru Dec Production Lot Serial number: Rolling from 01 each month 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 *: Typical Inches Min. Max. 0.1850 0.2007 0.1496 0.1575 0.2283 0.2441 0.0500* 0.0130 0.0201 0.1472 0.1527 DIM A B C D E F Millimeters Min. Max. 4.70 5.10 3.80 4.00 5.80 6.20 1.27 * 0.33 0.51 3.74 3.88 DIM G H I J K L Inches Min. Max. 0.0531 0.0689 0.1889 0.2007 0.0019 0.0098 0.0157 0.0500 0.0067 0.0098 0.0531 0.0610 Millimeters Min. Max. 1.35 1.75 4.80 5.10 0.05 0.25 0.40 1.27 0.17 0.25 1.35 1.55 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB080P06Q8 CYStek Product Specification