LESHAN RADIO COMPANY, LTD. PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium. • Reduces Board Space • High hFE, 210 −460 (Typical) • Low VCE(sat), < 0.5 V • ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V • Available in 4 mm, 8000 Unit Tape & Reel • This is a Pb−Free Device L2SA2029QM3T5G L2SA2029RM3T5G 3 2 1 SOT –723 COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO −60 Vdc Collector−Emitter Voltage V(BR)CEO −50 Vdc Emitter−Base Voltage V(BR)EBO −6.0 Vdc IC −100 mAdc Collector Current − Continuous 1 BASE 2 EMITTER MARKING DIAGRAM THERMAL CHARACTERISTICS Symbol Max Unit Power Dissipation (Note 1) Rating PD 265 mW Junction Temperature TJ 150 °C Tstg −55 ~ + 150 Storage Temperature Range °C 3 SOT−723 XXM 2 1 XX (FQ FR M Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR−4 glass epoxy printed circuit board using the minimum recommended footprint. = Specific Device Code = L2SA2029QM3T5G = L2SA2029RM3T5G) = Date Code ORDERING INFORMATION Device Package L2SA2029QM3T5G SOT−723 (Pb−Free) Shipping 8000/Tape & Reel Rev.O 1/5 LESHAN RADIO COMPANY, LTD. L2SA2029QM3T5G,L2SA2029RM3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) V(BR)CBO −60 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) V(BR)EBO −6.0 − − Vdc Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO − − −0.5 nA Emitter−Base Cutoff Current (VEB = −7.0 Vdc, IB = 0) IEBO − − −0.1 mA − − −0.5 120 − 560 − 140 − − 3.5 − Collector−Emitter Saturation Voltage (Note 2) (IC = −50 mAdc, IB = −5.0 mAdc) DC Current Gain (Note 2) (VCE = −6.0 Vdc, IC = −1.0 mAdc) VCE(sat) hFE Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz) fT COB Vdc − MHz pF 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. h FE values are classified as follows: * hFE Q 120~270 R 180~390 Rev.O 2/5 LESHAN RADIO COMPANY, LTD. L2SA2029QM3T5G,L2SA2029RM3T5G TYPICAL ELECTRICAL CHARACTERISTICS 1.2 IC/IB = 10 TA = 25°C TA = 150°C 0.1 TA = −55°C 1 0.9 TA = 25°C 0.7 0.6 0.5 TA = 150°C 0.4 0.3 0.1 1.0 10 100 0.2 0.1 1000 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. Collector−Emitter Saturation Voltage vs. Collector Current Figure 2. Base−Emitter Saturation Voltage vs. Collector Current 1000 TA = 150°C TA = 25°C TA = −55°C 100 2.0 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 6 V hFE, DC CURRENT GAIN TA = −55°C 0.8 0.01 10 0.1 1.0 10 100 1000 1.0 IC = 10 mA 0.8 0.6 0.4 0.2 0 0.01 0.1 1.0 10 100 100 TA = 25°C 0.6 0.5 TA = 150°C 0.4 IC = 30 mA 1.2 Figure 4. Saturation Region TA = −55°C 0.7 1.4 Figure 3. DC Current Gain vs. Collector Current VCE = 2 V 0.8 IC = 50 mA 1.6 IB, BASE CURRENT (mA) 1 0.9 TA = 25°C IC = 100 mA 1.8 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) VBE(ON), BASE−EMITTER ON VOLTAGE (V) IC/IB = 10 1.1 VCE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE, COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 10 Cibo Cobo 0.3 0.2 0.1 1.0 10 100 1000 1 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 5. Base−Emitter Turn−ON Voltage vs. Collector Current Figure 6. Capacitance 100 Rev.O 3/5 LESHAN RADIO COMPANY, LTD. L2SA2029QM3T5G,L2SA2029RM3T5G TYPICAL ELECTRICAL CHARACTERISTICS 1000 VCE = −2 V TA = 25°C IC, COLLECTOR CURRENT (mA) ftau, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 1000 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 7. Current Gain Bandwidth Product vs. Collector Current 100 ms 100 1 ms 10 1 1.0 10 ms Thermal Limit Single Pulse Test at TA = 25°C 10 VCE, COLLECTOR EMITTER VOLTAGE (V) 100 Figure 8. Safe Operating Area Rev.O 4/5 LESHAN RADIO COMPANY, LTD. L2SA2029QM3T5G,L2SA2029RM3T5G SOT−723 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y C STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches Rev.O 5/5