GDSSF2307 D DESCRIPTION The SSF2307 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram ● VDS = -30V,ID = -3A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 80mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2307 SSF2307 SOT-23 Tape width Quantity 8 mm 3000 units Ø180mm ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ID（25℃） -3 A ID（70℃） -2.5 A IDM -12 A PD 1.25 W TJ,TSTG -55 To 150 ℃ RθJA 100 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF2307 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 V Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA Drain-Source On-State Resistance RDS(ON) ON CHARACTERISTICS (Note 3) Forward Transconductance gFS -1 V VGS=-10V, ID=-3A 64 80 VGS=-4.5V, ID=-2.5A 100 140 VDS=-10V,ID=-3A 3 mΩ S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-15V,VGS=0V, F=1.0MHz 600 PF 150 PF Output Capacitance Coss Reverse Transfer Capacitance Crss 95 PF Turn-on Delay Time td(on) 10 nS Turn-on Rise Time tr 9 nS 25 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDD=-15V,ID=-1A VGS=-10V,RGEN=6Ω Turn-Off Fall Time tf 8 nS Total Gate Charge Qg 10 nC Gate-Source Charge Qgs 2 nC Gate-Drain Charge Qgd 2 nC VDS=-15V,ID=-3A,VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1.25A -1.2 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. Suzhou Goodark Electronics Co., Ltd Version 1.0 V GDSSF2307 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms ZthJA Normalized Transient Thermal Resistance Figure 1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF2307 SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Suzhou Goodark Electronics Co., Ltd Version 1.0