T PL IA N M CO *R oH S Features Applications n RoHS compliant* n Switch Mode Power Supplies n Low profile n Portable equipment batteries n Low power loss, high efficiency n High frequency rectification n UL 94V-0 classification n DC/DC Converters LE AD FR EE n Telecommunications CD214C-S3x Series Rectifier Chip Diode General Information Ro VE LEA HS RS D CO ION FRE M SA E PL R IA E NT * Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications in a compact chip package compatible with DO-214AB (SMC) size format. The Glass Passivated Rectifier Diodes offer a forward current of 3 A with a choice of repetitive peak reverse voltage of 200 V up to 1000 V. Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Maximum Repetitive Peak Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Operating Junction Temperature Range Storage Temperature Range VRRM S3D 200 S3G 400 CD214CS3J 600 S3K 800 S3M 1000 Unit V IF(AV) 3 A ISM 100 A TOPR -65 to +175 °C -65 to +175 °C TSTG Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Maximum Instantaneous Forward Voltage (NOTE 1) DC Reverse Current Typical Thermal Resistance (NOTE 2) Junction to Ambient Junction to Lead Symbol Condition VF IR Min. Typ. Max. Unit IF = 3 A 0.96 1 V VR = VRRM 0.1 5 µA RθJA 118 RθJL 32 NOTES: (1) Pulse width 300 microsecond, 1 % duty cycle. (2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas. *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. °C/W 3312 - 2Series mm SMD Trimming CD214C-S3x Rectifier Chip DiodePotentiometer Performance Graphs Maximum Peak Forward Surge Current 120 3.0 Peak Forward Surge Current (Amps) Average Forward Rectified Current (Amps) Forward Current Derating Curve 2.5 2.0 1.5 Resistive or Inductive Load PCB Mounted on 5.0 x 5.0 mm (0.2 x 0.2 inch) Copper Pad Areas 1.0 0.5 0 0 25 50 100 80 100 125 150 (JEDEC Method) 60 40 20 0 75 8.3 ms Single Half Sine-Wave 175 0 Lead Temperature (°C) Typical Instantaneous Forward Characteristics 100 TJ = 150 °C C TJ = 1255 °C C TJ = 100 °C C TJ = 25 °C C Instantaneous Reverse Current (mA) Instantaneous Forward Current (A) 100 Typical Reverse Characteristics 10 1 0.1 0.01 0.2 10 Number of Cycles @ 60 Hz TJ = 125 °C 1 TJ = 100 °C 0.1 0.6 0.8 Instantaneous Forward Voltage (Volts) 1.0 TJ = 25 °C 0.01 0.001 0.4 TJ = 150 °C 10 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. G H I 3312 - 2 mm SMD Trimming Potentiometer CD214C-S3x Series Rectifier Chip Diode Product Dimensions Recommended Pad Layout A G B D C H I E E F B Dimension A CD214C-S3 Series A 8.0 ± 0.10 (0.315 ± 0.004) B 5.0 ± 0.10 (0.197 ± 0.004) C 3.90 TYP. (0.154) D 0.80 ± 0.02 (0.031 ± 0.001) E 1.95 ± 0.10 (0.077 ± 0.004) F 1.10 ± 0.15 (0.043 ± 0.006) C E DIMENSIONS: Dimension CD214C-S3 Series G 4.10 MAX. (0.161) H 3.90 MIN. (0154) I 11.90 REF. (0.469) DIMENSIONS: MM (INCHES) Environmental Specifications D Moisture Sensitivity Level.................................................................1 ESD Classification (HBM)............................................................. 3B Typical Part Marking E MM (INCHES) DATE CODE: Y = LAST DIGIT OF YEAR WW = WEEK NUMBER S3D YWW How to Order F CD 214C - S 3 D Common Code CD = Chip Diode Package 214C = SMC/DO-214AB Compatible Model S = Glass Passivated Rectifier Series Maximum Average Forward Rectified Current 3=3A Maximum Repetitive Peak Reverse Voltage D = 200 V G = 400 V J = 600 V K = 800 V M = 1000 V Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. DEVICE CODE: S3D = CD214C-S3D S3G = CD214C-S3G S3J = CD214C-S3J S3K = CD214C-S3K S3M = CD214C-S3M 3312 - 2 mm SMD Trimming Potentiometer CD214C-S3x Series Rectifier Chip Diode Packaging Information The product is dispensed in tape and reel format (see diagram below). P 0 P 1 d T E Index Hole 120 ° F B D1 D P A Trailer End D2 W ....... ....... C Device ....... ....... Leader ....... ....... ....... ....... 30 pitches W1 Start DIMENSIONS: MM (INCHES) 30 pitches Direction of Feed Item Symbol CD214C-S3 Series Carrier Width A 5.56 ± 0.10 (0.219 ± 0.004) Carrier Length B 8.18 ± 0.10 (0.322 ± 0.004) Carrier Depth C Sprocket Hole d 1.55 ± 0.05 (0.061 ± 0.002) Reel Outside Diameter D 330 ± 2.0 (12.992 ± 0.079) Reel Inner Diameter D1 Feed Hole Diameter D2 13.0 ± 0.50 (0.512 ± 0.020) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 7.50 ± 0.10 (0.295 ± 0.004) Punch Hole Pitch P 8.00 ± 0.10 (0.315 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.10 (0.079 ± 0.004) Overall Tape Thickness T Tape Width W Reel Width W1 Quantity per Reel -- 2.50 MAX. (0.098) 50.0 MIN. (1.969) Asia-Pacific: Tel: +886-2 2562-4117 Email: [email protected] Europe: Tel: +36 88 520 390 Email: [email protected] The Americas: Tel: +1-951 781-5500 Email: [email protected] www.bourns.com 0.40 MAX. (0.016) 16.00 ± 0.30 (0.630 ± 0.012) 22.7 MAX. (0.893) 3,000 01/18 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.