Preliminary Technical Information IXTH200N085T IXTQ200N085T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) = 85 V = 200 A ≤ 5.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ VGSM 85 85 V V Transient ± 20 V ID25 ILRMS IDM TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM 200 75 540 A A A IAR E AS TC = 25° C TC = 25° C 25 1.0 A J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤175° C, RG = 5 Ω 3 V/ns PD TC = 25° C 480 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque Weight TO-3P TO-247 1.13 / 10 Nm/lb.in. 5.5 6 Symbol Test Conditions (TJ = 25° C unless otherwise specified) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 85 VGS(th) VDS = VGS, ID = 250 µA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 V TJ = 150° C © 2006 IXYS CORPORATION All rights reserved G D (TAB) S TO-3P (IXTQ) TJ TJM Tstg TL TSOLD TO-247 (IXTH) 4.0 4.0 V ± 200 nA 5 250 µA µA 5.0 mΩ G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications DS99703 (11/06) IXTH200N085T IXTQ200N085T Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Typ. 72 125 S 7600 pF Ciss Coss TO-247AD Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz Max. 1040 pF 200 pF 32 ns Crss td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 80 ns td(off) RG = 5 Ω (External) 65 ns 64 ns 152 nC 37 nC 42 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 1 RthCS Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Source-Drain Diode Symbol Test Conditions TJ = 25° C unless otherwise specified) Min. Characteristic Values Typ. Max. IS VGS = 0 V 200 A ISM Pulse width limited by TJM 540 A VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -di/dt = 100 A/µs 90 ns 2 - Drain Tab - Drain Dim. °C/W 0.25 3 Terminals: 1 - Gate 3 - Source 0.31 °C/W RthJC 2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline VR = 40 V, VGS = 0 V Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: PRELIMINARY TECHNICAL INFORMATION 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTA200N085T IXTP200N085T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 300 VGS = 10V 8V 7V 180 160 240 140 210 I D - Amperes I D - Amperes VGS = 10V 8V 7V 270 120 6V 100 80 60 180 6V 150 120 90 5V 40 60 20 5V 30 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 1 2 5 6 2.6 200 VGS = 10V 8V 7V 160 2.2 140 120 6V 100 80 5V 60 VGS = 10V 2.4 RDS(on) - Normalized 180 I D - Amperes 4 Fig. 4. RDS(on) Normalized to ID = 100A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 2.0 1.8 I D = 200A 1.6 I D = 100A 1.4 1.2 40 1.0 20 0.8 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 100A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.8 140 External Lead Current Limit for TO-263 (7-Lead) 2.6 120 2.4 TJ = 175ºC 2.2 100 2 I D - Amperes RDS(on) - Normalized 3 VDS - Volts VDS - Volts VGS = 10V 15V - - - - 1.8 1.6 1.4 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 60 40 1.2 1 20 TJ = 25ºC 0.8 0 0.6 0 40 80 120 160 200 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 240 280 320 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH200N085T IXTQ200N085T Fig. 8. Transconductance Fig. 7. Input Admittance 270 180 240 210 TJ = - 40ºC 140 180 g f s - Siemens I D - Amperes 160 TJ = -40ºC 25ºC 150ºC 150 120 25ºC 120 100 150ºC 80 90 60 60 40 30 20 0 0 3 3.5 4 4.5 5 5.5 6 0 6.5 30 60 90 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 240 9 VDS = 43V 8 I D = 25A 180 210 240 270 300 I G = 10mA 7 180 VGS - Volts IS - Amperes 210 150 TJ = 150ºC 90 150 Fig. 10. Gate Charge 270 120 120 I D - Amperes 6 5 4 3 TJ = 25ºC 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss 1,000 Coss Crss f = 1 MHz 100 0 5 0.10 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA200N085T IXTP200N085T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 100 100 RG = 5Ω 90 VGS = 10V TJ = 25ºC VDS = 43V 80 t r - Nanoseconds t r - Nanoseconds 90 70 60 50 RG = 5Ω 70 VGS = 10V VDS = 43V 60 50 I D = 50A 40 80 40 I D = 25A TJ = 125ºC 30 30 25 35 45 55 65 75 85 95 105 115 25 125 30 35 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance TJ = 125ºC, VGS = 10V 97 60 68 94 55 120 50 I D = 50A 100 45 I D = 25A 80 40 60 35 40 30 20 6 8 10 12 14 16 18 64 88 62 tf td(off) - - - - 85 60 RG = 5Ω, VGS = 10V 82 VDS = 43V 58 79 76 I D = 50A 54 25 35 45 72 105 115 70 125 320 180 td(off) - - - - 85 80 RG = 5Ω, VGS = 10V 75 VDS = 43V 58 70 TJ =125ºC 54 65 290 TJ = 125ºC, VGS = 10V VDS = 43V 160 t f - Nanoseconds t f - Nanoseconds 95 260 140 230 I D = 50A 120 I D = 25A 200 100 170 80 140 60 110 t d ( o f f ) - Nanoseconds 90 TJ = 125ºC 56 85 td(off) - - - - tf 100 t d ( o f f ) - Nanoseconds 66 60 75 200 95 tf 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 105 TJ = 25ºC 68 62 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 64 73 52 20 RG - Ohms 70 91 56 25 4 I D = 25A 66 t d ( o n ) - Nanoseconds t r - Nanoseconds 70 t d ( o f f ) - Nanoseconds VDS = 43V 140 50 65 td(on) - - - - t f - Nanoseconds 160 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 180 tr 40 I D - Amperes 60 TJ = 25ºC 52 50 55 50 24 26 28 30 32 34 36 38 40 42 44 46 48 50 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 40 80 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_200N085T (61) 11-20-06-A.xls