Fairchild FJX4002RTF Switching circuit, inverter, interface circuit, driver circuit Datasheet

FJX4002R
FJX4002R
Switching Application (Bias Resistor Built In)
3
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=10KΩ, R2=10KΩ)
• Complement to FJX3002R
2
1
SOT-323
1. Base 2. Emitter 3. Collector
Equivalent Circuit
C
Marking
R1
S52
B
R2
PNP Epitaxial Silicon Transistor
E
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
-50
Units
V
VCEO
VEBO
Collector-Emitter Voltage
-50
V
Emitter-Base Voltage
-10
IC
V
Collector Current
-100
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC= -10µA, IE=0
Min.
-50
BVCEO
Collector-Emitter Breakdown Voltage
IC= -100µA, IB=0
-50
ICBO
Collector Cut-off Current
VCB= -40V, IE=0
hFE
DC Current Gain
VCE= -5V, IC= -5mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -10mA, IB= -0.5mA
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
VCE= -10V, IC=-5mA
VCB= -10V, IE=0
f=1.0MHz
Max.
Units
V
-0.1
µA
V
30
-0.3
VI(off)
Input Off Voltage
VCE= -5V, IC= -100µA
VI(on)
Input On Voltage
VCE= -0.3V, IC= -10mA
R1
Input Resistor
7
R1/R2
Resistor Ratio
0.9
©2002 Fairchild Semiconductor Corporation
Typ.
V
200
MHz
5.5
pF
-0.5
V
-3
V
10
13
KΩ
1
1.1
Rev. A2, August 2002
-100
VCE = - 5V
VCE = - 0.3V
R1 = 10 K
R1 = 10 K
R2 = 10 K
R2 = 10 K
VI(on)[V], INPUT VOLTAGE
hFE, DC CURRENT GAIN
1000
100
-10
-100
-1
-0.1
-0.1
10
-1
-10
-1000
-1
IC[mA], COLLECTOR CURRENT
-10
-100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Input On Voltage
280
VCE = - 5V
R1 = 10 K
R2 = 10 K
240
PC[mW], POWER DISSIPATION
IC [µA], COLLECTOR CURRENT
-1000
-100
-10
-0.0
200
160
120
80
40
0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
0
25
50
75
100
125
150
175
o
VI(off)[V], INPUT OFF VOLTAGE
Figure 3. Input Off Voltage
©2002 Fairchild Semiconductor Corporation
Ta[ C], AMBIENT TEMPERATURE
Figure 4. Power Derating
Rev. A2, August 2002
FJX4002R
Typical Characteristics
FJX4002R
Package Dimensions
SOT-323
2.00±0.20
3°
1.25±0.10
2.10±0.10
0.95±0.15
0.90
±0.10
+0.05
0.05 –0.02
1.00±0.10
1.30±0.10
0.275±0.100
3°
+0.04
0.135 –0.01
0.10 Min
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
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The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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