M36W108T M36W108B 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product NOT FOR NEW DESIGN ■ M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB ■ SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION LGA BGA LBGA48 (ZM) 6 x 8 solder balls – Read: 40mA max. (SRAM chip) LGA48 (ZN) 6 x 8 solder lands – Stand-by: 30µA max. (SRAM chip) – Read: 10mA max. (Flash chip) – Stand-by: 100µA max. (Flash chip) FLASH MEMORY ■ 8 Mbit (1Mb x 8) BOOT BLOCK ERASE ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) Figure 1. Logic Diagram – Program Byte-by-Byte VCCF VCCS – Status Register bits and Ready/Busy Output ■ MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main Blocks ■ BLOCK, MULTI-BLOCK and CHIP ERASE ■ ERASE SUSPEND and RESUME MODES 20 A0-A19 – Read and Program another Block during Erase Suspend ■ ■ 8 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 20h DQ0-DQ7 W EF G M36W108T M36W108B RB RP E1S E2S – Device Code, M36W108T: D2h – Device Code, M36W108B: DCh SRAM ■ 1 Mbit (128Kb x 8) ■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS ■ LOW VCC DATA RETENTION: 2V May 1999 This is information on a product still in production but not recommended for new designs. VSS AI02509 1/35 M36W108T, M36W108B Figure 2. LBGA and LGA Connections (Top View) 1 2 3 A W A14 A11 B VCCS A18 C A17 D 4 5 6 G A10 E1S A8 DQ7 DQ5 VSS NC A5 DQ4 DQ2 DQ1 VSS EF NC DQ0 A0 A1 E NC NC DQ3 A6 A3 A2 F NC VCCF NC A19 A7 A4 G NC DQ6 A13 RP RB E2S H NC A12 NC A16 A15 A9 AI02508 Table 1. Signal Names A0-A16 Address Inputs A17-A19 Address Inputs for Flash Chip DQ0-DQ7 Data Input/Outputs, Command Inputs for Flash Chip EF Chip Enable for Flash Chip E1S, E2S Chip Enable for SRAM Chip G Output Enable W Write Enable RP Reset for Flash Chip RB Ready/Busy Output for Flash Chip VCCF Supply Voltage for Flash Chip VCCS Supply Voltage for SRAM Chip VSS Ground 2/35 DESCRIPTION The M36W108 is multi-chip device containing an 8 Mbit boot block Flash memory and a 1 Mbit of SRAM. The device is offered in the new Chip Scale Package solutions: LBGA48 1.0 mm ball pitch and LGA48 1.0 mm land pitch. The two components, of the package’s overall 9 Mbit of memory, are distinguishable by use of the three chip enable lines: EF for the Flash memory, E1S and E2S for the SRAM. The Flash memory component is identical with the M29W008 device. It is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V V CCF supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks. Instructions for Read/Reset, Auto Select for reading the Electronic Signature, Programming, Block M36W108T, M36W108B Table 2. Absolute Maximum Ratings (1) Symbol Value Unit Ambient Operating Temperature (3) –40 to 85 °C TBIAS Temperature Under Bias –50 to 125 °C TSTG Storage Temperature –65 to 150 °C VIO (2) Input or Output Voltage –0.5 to VCC +0.5 V VCCF Flash Chip Supply Voltage –0.6 to 5 V VCCS SRAM Chip Supply Voltage –0.3 to 4.6 V EF, RP Voltage 0.6 to 13.5 V 0.7 W TA V(EF, RP) PD Parameter Power Dissipation Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns. 3. Depends on range. and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings. The SRAM component is a low power SRAM that features fully static operation requiring no external clocks or timing strobes, with equal address access and cycle times. It requires a single 2.7V to 3.6V V CCS supply, and all inputs and outputs are TTL compatible. SIGNAL DESCRIPTIONS See Figure 1 and Table 1. Address Inputs (A0-A16). Addresses A0 to A16 are common inputs for the Flash chip and the SRAM chip. The address inputs for the Flash memory or the SRAM array are latched during a write operation on the falling edge of Flash Chip Enable (EF), SRAM Chip Enable (E1S or E2S) or Write Enable (W). Address Inputs (A17-A19). Address A17 to A19 are address inputs for the Flash chip. They are latched during a write operation on the falling edge of Flash Chip Enable (EF) or Write Enable (W). Data Input/Outputs (DQ0-DQ7). The input is data to be programmed in the Flash or SRAM memory array or a command to be written to the C.I. of the Flash chip. Both are latched on the rising edge of Flash Chip Enable (EF), SRAM Chip Enable (E1S or E2S) or Write Enable (W). The output is data from the Flash memory or SRAM array, the Electronic Signature Manufacturer or Device codes or the Status register Data Polling bit DQ7, the Toggle Bits DQ6 and DQ2, the Error bit DQ5 or the Erase Timer bit DQ3. Outputs are valid when Flash Chip Enable (EF) or SRAM Chip Enable (E1S or E2S) and Output Enable (G) are active. The output is high impedance when the both the Flash chip and the SRAM chip are deselected or the outputs are disabled and when Reset (RP) is at a V IL. Flash Chip Enable (EF). The Chip Enable input for Flash activates the memory control logic, input buffers, decoders and sense amplifiers. EF at VIH deselects the memory and reduces the power consumption to the standby level. EF can also be used to control writing to the command register and to the Flash memory array, while W remains at VIL. It is not allowed to set EF at VIL, E1S at VIL and E2S at V IH at the same time. SRAM Chip Enable (E1S, E2S). The Chip Enable inputs for SRAM activate the memory control logic, input buffers, decoders and sense amplifiers. E1S at VIH or E2S at VIL deselects the memory and reduces the power consumption to the standby level. E1S and E2S can also be used to control writing to the SRAM memory array, while W remains at VIL. It is not allowed to set EF at VIL, E1S at VIL and E2S at VIH at the same time. Output Enable (G). The Output Enable gates the outputs through the data buffers during a read operation. When G is High the outputs are High impedance. Write Enable (W). The Write Enable input controls writing to the Command Register of the Flash chip and Address/Data latches. 3/35 M36W108T, M36W108B Table 3. Main Operation Modes (1) Operation Mode EF E1S E2S G W RP DQ0-DQ7 VIL VIH X VIL VIH VIH Data Output VIL X VIL VIL VIH VIH Data Output VIH VIL VIH VIL VIH X Data Output VIL VIH X VIH VIL VIH Data Input VIL X VIL VIH VIL VIH Data Input VIH VIL VIH X VIL X Data Input X VIH X VIH VIH X Hi-Z X X VIL VIH VIH X Hi-Z SRAM Chip Output Disable VIH VIL VIH VIH VIH X Hi-Z Flash Chip Stand-by VIH X X X X VIH Hi-Z X VIH X X X VIL Hi-Z X X VIL X X VIL Hi-Z X VIH X X X VIL Hi-Z X X VIL X X VIL Hi-Z Flash Chip Read SRAM Chip Read Flash Chip Write SRAM Chip Write Flash Chip Output Disable Flash Chip Reset SRAM Chip Stand-by Note: 1. X = VIL or VIH. Reset Input (RP). The Reset input provides hardware reset of the Flash chip. Reset of the Flash memory is achieved by pulling RP to VIL for at least t PLPX. When the reset pulse is given, if the Flash memory is in Read or Standby modes, it will be available for new operations in tPHEL after the rising edge of RP. If the Flash memory is in Erase or Program mode the reset will take tPLYH during which the Ready/ Busy (RB) signal will be held at VIL. The end of the Flash memory reset will be indicated by the rising edge of RB. A hardware reset during an Erase or Program operation will corrupt the data being programmed or the block(s) being erased. See Table 17 and Figure 9. Ready/Busy Output (RB). Ready/Busy is an open-drain output of the Flash chip. It gives the internal state of the Program/Erase Controller (P/ E.C.) of the Flash device. When RB is Low, the Flash device is busy with a Program or Erase operation and it will not accept any additional program or erase instructions except the Erase Suspend instruction. When RB is High, the Flash device is ready for any Read, Program or Erase operation. The RB will also be High when the Flash memory is put in Erase Suspend or Standby modes. 4/35 VCCF Supply Voltage. Flash memory power supply for all operations (Read, Program and Erase). VCCS Supply Voltage. SRAM power supply for all operations (Read, Program). VSS Ground. VSS is the reference for all voltage measurements. POWER SUPPLY Power Up. The Flash memory Command Interface is reset on power up to Read Array. Either Flash Chip Enable (EF) or Write Enable (W) inputs must be tied to VIH during Power Up to allow maximum security and the possibility to write a command on the first rising edge of EF and W. Any write cycle initiation is blocked when VCCF is below VLKO. Supply Rails. Normal precautions must be taken for supply voltage decoupling; each device in a system should have the V CCF, VCCS rails decoupled with a 0.1µF capacitor close to the V CCF, VCCS and V SS pins. The PCB trace widths should be sufficient to carry the V CCF and V CCS program currents and the V CCF erase current required. M36W108T, M36W108B Figure 3. Internal Functional Arrangement VCCF VSS RP RB EF 8 Mbit Flash Memory (1Mb x 8) A0-A19 DQ0-DQ7 W G VCCS A0-A16 VSS 1 Mbit SRAM (128 Kb x 8) E1S E2S AI02444 5/35 M36W108T, M36W108B FLASH MEMORY COMPONENT Organization and Architecture Organization. The Flash chip is organized as 1Mbit x 8. The memory uses the address inputs A0-A19 and the Data Input/Outputs DQ0-DQ7. Memory control is provided by Chip Enable (EF), Output Enable (G) and Write Enable (W) inputs. Erase and Program operations are controlled by an internal Program/Erase Controller (P/E.C.). Status Register data output on DQ7 provides a Data Polling signal, while Status Register data outputs on DQ6 and DQ2 provide Toggle signals to indicate the state of the P/E.C. operations. A Ready/Busy (RB) output indicates the completion of the internal algorithms. Memory Blocks. The device features asymmetrically blocked architecture providing system memory integration. Both Top and Bottom Boot Block devices have an array of 19 blocks, one Boot Block of 16K Bytes, two Parameter Blocks of 8K Bytes, one Main Block of 32K Bytes and fifteen Main Blocks of 64K Bytes. The Top Boot Block version has the Boot Block at the top of the memory address space and the Bottom Boot Block version locates the Boot Block starting at the bottom. The memory maps and block address tables are showed in Figures 4, 5 and Tables 4, 5. Each block can be erased separately, any combination of blocks can be specified for multi-block erase or the entire chip may be erased. The Erase operations are managed automatically by the P/E.C. The block erase operation can be suspended in order to read from or program to any block not being erased, and then resumed. Device Operations The following operations can be performed using the appropriate bus cycles: Read Array, Write command, Output Disable, Standby and Reset (see Table 6). Read. Read operations are used to output the contents of the Memory Array, the Electronic Signature or the Status Register. Both Chip Enable (EF) and Output Enable (G) must be low, with Write Enable (W) high, in order to read the output of the memory. Table 4. Top Boot Block, Flash Block Address Table 5. Bottom Boot Block, Flash Block Address Size (KWord) Address Range 16 FC000h-FFFFFh Size (KWord) 8 FA000h-FBFFFh 64 F0000h-FFFFFh 8 F8000h-F9FFFh 64 E0000h-EFFFFh 32 F0000h-F7FFFh 64 D0000h-DFFFFh E0000h-EFFFFh 64 C0000h-CFFFFh 64 D0000h-DFFFFh 64 B0000h-BFFFFh 64 C0000h-CFFFFh 64 A0000h-AFFFFh 64 B0000h-BFFFFh 64 90000h-9FFFFh 64 A0000h-AFFFFh 64 80000h-8FFFFh 64 90000h-9FFFFh 64 70000h-7FFFFh 64 80000h-8FFFFh 64 60000h-6FFFFh 70000h-7FFFFh 64 50000h-5FFFFh 64 60000h-6FFFFh 64 40000h-4FFFFh 64 50000h-5FFFFh 64 30000h-3FFFFh 64 40000h-4FFFFh 64 20000h-2FFFFh 64 30000h-3FFFFh 64 10000h-1FFFFh 64 20000h-2FFFFh 32 08000h-0FFFFh 64 10000h-1FFFFh 8 06000h-07FFFh 00000h-0FFFFh 8 04000h-05FFFh 16 00000h-03FFFh 64 64 64 6/35 Address Range M36W108T, M36W108B Instructions and Commands Seven instructions are defined (see Table 7) to perform Read Array, Auto Select (to read the Electronic Signature), Program, Block Erase, Chip Erase, Erase Suspend and Erase Resume. The internal P/E.C. automatically handles all timing and verification of the Program and Erase operations. The Status Register Data Polling, Toggle, Error bits and the RB output may be read at any time, during programming or erase, to monitor the progress of the operation. Instructions, made up of commands written in cycles, can be given to the Program/Erase Controller through a Command Interface (C.I.). The C.I. latches commands written to the memory. Commands are made of address and data sequences. Two coded cycles unlock the Command Interface. They are followed by an input command or a confirmation command. The coded sequence consists of writing the data AAh at the address 5555h during the first cycle and the data 55h at the address 2AAAh during the second cycle. Write. Write operations are used to give Instruction Commands to the memory or to latch input data to be programmed. A write operation is initiated when Chip Enable (EF) is Low and Write Enable (W) is at VIL with Output Enable (G) at VIH. Addresses are latched on the falling edge of W or EF whichever occurs last. Commands and Input Data are latched on the rising edge of W or EF whichever occurs first. Output Disable. The data outputs are high impedance when the Output Enable (G) is at VIH with Write Enable (W) at VIH. Standby. The memory is in standby when Chip Enable (EF) is at V IH and the P/E.C. is idle. The power consumption is reduced to the standby level and the outputs are high impedance, independent of the Output Enable (G) or Write Enable (W) inputs. Automatic Standby. After 150ns of bus inactivity and when CMOS levels are driving the addresses, the chip automatically enters a pseudo-standby mode where consumption is reduced to the CMOS standby value, while outputs still drive the bus. Table 6. Flash User Bus Operations (1) Operation EF G W RP A0 A1 A6 A9 A12 A15 DQ0-DQ7 Read Byte VIL VIL VIH VIH A0 A1 A6 A9 A12 A15 Data Output Write Byte VIL VIH VIL VIH A0 A1 A6 A9 A12 A15 Data Input Output Disable VIL VIH VIH VIH X X X X X X Hi-Z Stand-by VIH X X VIH X X X X X X Hi-Z X X X VIL X X X X X X Hi-Z Reset Note: 1. X = VIL or VIH. Table 7. Read Flash Electronic Signature Code EF G W A0 A1 Other Addresses DQ0-DQ7 VIL VIL VIH VIL VIL Don’t care 20h M36W108T VIL VIL VIH VIH VIL Don’t care D2h M36W108B VIL VIL VIH VIH VIL Don’t care DCh Device Manufact. Code Device Code 7/35 M36W108T, M36W108B Table 8. Flash Commands Hex Code Command 00h Invalid/Reserved 10h Chip Erase Confirm 20h Reserved 30h Block Erase Resume/Confirm 80h Set-up Erase 90h Read Electronic Signature/ Block Protection Status A0h Program B0h Erase Suspend F0h Read Array/Reset Instructions are composed of up to six cycles. The first two cycles input a Coded Sequence to the Command Interface which is common to all instructions (see Table 9). The third cycle inputs the instruction set-up command. Subsequent cycles output the addressed data or Electronic Signature for Read operations. In order to give additional data protection, the instructions for Program and Block or Chip Erase require further command inputs. For a Program instruction, the fourth command cycle inputs the address and data to be programmed. For an Erase instruction (block or chip), the fourth and fifth cycles input a further Coded Sequence before the Erase confirm command on the sixth cycle. Erasure of a memory block may be suspended, in order to read data from another block or to program data in another block, and then resumed. When power is first applied or if V CCF falls below VLKO, the command interface is reset to Read Array. 8/35 Command sequencing must be followed exactly. Any invalid combination of commands will reset the device to Read Array. The increased number of cycles has been chosen to assure maximum data security. Read/Reset (RD) Instruction. The Read/Reset instruction consists of one write cycle giving the command F0h. It can be optionally preceded by the two Coded cycles. Subsequent read operations will read the memory array addressed and output the data read. A wait state of tPLYH is necessary after Read/Reset prior to any valid read if the memory was in an Erase or Program mode when the RD instruction is given (see Table 17 and Figure 9). Auto Select (AS) Instruction. This instruction uses the two Coded cycles followed by one write cycle giving the command 90h to address 5555h for command set-up. A subsequent read will output the Manufacturer Code or the Device Code (Electronic Signature) depending on the levels of A0 and A1 (see Table 7). The Electronic Signature can be read from the memory allowing programming equipment or applications to automatically match their interface to the characteristics of the Flash memory. The Manufacturer Code, 20h, is output when the addresses lines A0 and A1 are at VIL, the Device Code is output when A0 is at VIH with A1 at VIL. Other address inputs are ignored. Program (PG) Instruction. This instruction uses four write cycles. The Program command A0h is written to address 5555h on the third cycle after two Coded Cycles. A fourth write operation latches the Address and the Data to be written and starts the P/E.C. Read operations output the Status Register bits after the programming has started. Memory programming is made only by writing ’0’ in place of ’1’. Status bits DQ6 and DQ7 determine if programming is on-going and DQ5 allows verification of any possible error. Programming at an address not in blocks being erased is also possible during erase suspend. In this case, DQ2 will toggle at the address being programmed. M36W108T, M36W108B Block Erase (BE) Instruction. This instruction uses a minimum of six write cycles. The Erase Set-up command 80h is written to address 5555h on third cycle after the two Coded cycles. The Block Erase Confirm command 30h is similarly written on the sixth cycle after another two Coded Cycles. During the input of the second command an address within the block to be erased is given and latched into the memory. Additional block Erase Confirm commands and block addresses can be written subsequently to erase other blocks in parallel, without further Coded cycles. The erase will start after the erase timeout period (see Erase Timer Bit DQ3 description). Thus, additional Erase Confirm commands for other blocks must be given within this delay. The input of a new Erase Confirm command will restart the timeout period. The status of the internal timer can be monitored through the level of DQ3, if DQ3 is ’0’ the Block Erase Command has been given and the timeout is running, if DQ3 is ’1’, the timeout has expired and the P/E.C. is erasing the block(s). If the second command given is not an erase confirm or if the Coded cycles are wrong, the instruction aborts, and the device is reset to Read Array. It is not necessary to program the block with 00h as the P/E.C. will do this automatically before to erasing to FFh. Read operations after the sixth rising edge of W or EF output the Status Register bits. During the execution of the erase by the P/E.C., the memory only accepts the Erase Suspend (ES) and Read/Reset (RD) instructions. A Read/Reset command will definitively abort erasure and result in invalid data in blocks being erased. A complete state of the block erase operation is given by the Status Register bits (see DQ2, DQ3, DQ5, DQ6 and DQ7 description). Chip Erase (CE) Instruction. This instruction uses six write cycles. The Erase Set-up command 80h is written to address 5555h on the third cycle after the two Coded Cycles. The Chip Erase Confirm command 10h is similarly written on the sixth cycle after another two Coded Cycles. If the sec- ond command given is not an erase confirm or if the Coded Sequence is wrong, the instruction aborts and the device is reset to Read Array. It is not necessary to program the array with 00h first as the P/E.C. will automatically do this before erasing it to FFh. Read operations after the sixth rising edge of W or EF output the Status Register bits. A complete state of the chip erase operation is given by the Status Register bits (see DQ2, DQ3, DQ5, DQ6 and DQ7 description). Erase Suspend (ES) Instruction. The Block Erase operation may be suspended by this instruction which consists of writing the command B0h without any specific address. No Coded Cycles are required. It permits reading of data from another block and programming in another block while an erase operation is in progress. Erase suspend is accepted only during the Block Erase instruction execution. Writing this command during the erase timeout period will, in addition to suspending the erase, terminate the timeout. The Toggle bit DQ6 stops toggling when the P/E.C. is suspended. The Toggle bits will stop toggling between 0.1µs and 15µs after the Erase Suspend (ES) command has been written. The device will then automatically be set to Read Memory Array mode. When erase is suspended, a Read from blocks being erased will output DQ2 toggling and DQ6 at '1'. A Read from a block not being erased returns valid data. During suspension the memory will respond only to the Erase Resume (ER) and the Program (PG) instructions. A Program operation can be initiated during Erase Suspend in one of the blocks not being erased. It will result in both DQ2 and DQ6 toggling when the data is being programmed. A Read/Reset command will definitively abort erasure and result in invalid data in the blocks being erased. Erase Resume (ER) Instruction. If an Erase Suspend instruction was previously executed, the erase operation may be resumed by giving the command 30h, at any address, and without any Coded cycles. 9/35 M36W108T, M36W108B Table 9. Flash Instructions (1) Mne. Instr. Cyc. 1+ Read/Reset RD (2,4) Memory Array 1st Cyc. 2nd Cyc. 3rd Cyc. 4th Cyc. 5th Cyc. 6th Cyc. Addr. (3,7) Data 3+ Addr. (3,7) Data AS (4) Auto Select 3+ Addr. (3,7) Data Addr. (3,7) PG Program BE Block Erase 6 Addr. (3,7) Data CE Chip Erase 6 Addr. (3,7) Data Erase ES (10) Suspend 1 Erase Resume 1 ER X Read Memory Array until a new write cycle is initiated. F0h 5555h 2AAAh 5555h AAh 55h F0h 5555h 2AAAh 5555h AAh 55h 90h 5555h 2AAAh 5555h AAh 55h A0h 5555h 2AAAh 5555h 5555h 2AAAh Block Address Additional Block (8) AAh 55h 80h AAh 55h 30h 30h 5555h 2AAAh 5555h 5555h 2AAAh 5555h AAh 55h 80h AAh 55h 10h 4 Data Addr. (3,7) Data Addr. (3,7) Data 7th Cyc. Read Memory Array until a new write cycle is initiated. Read Electronic Signature or Block Protection Status until a new write cycle is initiated. See Note 5 and 6. Program Address Read Data Polling or Toggle Bit Program until Program completes. Data Note 9 X B0h X 30h Read until Toggle stops, then read all the data needed from any Block(s) not being erased then Resume Erase. Read Data Polling or Toggle Bits until Erase completes or Erase is suspended another time. Note: 1. Commands not interpreted in this table will default to read array mode. 2. A wait of tPLYH is necessary after a Read/Reset command if the memory was in an Erase, Erase Suspend or Program mode before starting any new operation (see Table 14 and Figure 7). 3. X = Don’t care. 4. The first cycles of the RD or AS instructions are followed by read operations. Any number of read cycles can occur after the command cycles. 5. Signature Address bits A0, A1, at VIL will output Manufacturer code (20h). Address bits A0 at VIH and A1, at VIL will output Device code. 6. Block Protection Address: A0, at V IL, A1 at VIH and A13-A19 within the Block will output the Block Protection status. 7. For Coded cycles address inputs A15-A19 are don’t care. 8. Optional, additional Blocks addresses must be entered within the erase timeout delay after last write entry, timeout status can be verified through DQ3 value (see Erase Timer Bit DQ3 description). When full command is entered, real Data Polling or Toggle bit until Erase is completed or suspended. 9. Read Data Polling, Toggle bits or RB until Erase completes. 10. During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased. 10/35 M36W108T, M36W108B Table 10. Flash Status Register Bits (1) DQ 7 Name Logic Level Definition ‘1’ Erase Complete or erase block in Erase Suspend ‘0’ Erase On-going DQ Program Complete or data of non erase block during Erase Suspend DQ Program On-going Data Polling ‘-1-0-1-0-1-0-1-’ DQ 6 Toggle Bit ‘-1-1-1-1-1-1-1-’ 5 4 3 2 Erase or Program On-going Program Complete Erase Complete or Erase Suspend on currently addressed block Note Indicates the P/E.C. status, check during Program or Erase, and on completion before checking bits DQ5 for Program or Erase Success. Successive reads output complementary data on DQ6 while Programming or Erase operations are on-going. DQ6 remains at constant level when P/E.C. operations are completed or Erase Suspend is acknowledged. ‘1’ Program or Erase Error ‘0’ Program or Erase On-going ‘1’ Erase Timeout Period Expired P/E.C. Erase operation has started. Only possible command entry is Erase Suspend (ES). ‘0’ Erase Timeout Period On-going An additional block to be erased in parallel can be entered to the P/E.C. Error Bit This bit is set to ‘1’ in the case of Programming or Erase failure. Reserved Erase Time Bit ‘-1-0-1-0-1-0-1-’ Chip Erase, Erase or Erase Suspend on the currently addressed block. Erase Error due to the currently addressed block (when DQ5 = ‘1’) ‘1’ Program on-going, Erase on-going on another block or Erase Complete DQ Erase Suspend read on non Erase Suspend block Toggle Bit 1 Reserved 0 Reserved Indicates the erase status and allows to identify the erased block. Note: 1. Logic level ‘1’ is High, ‘0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations. 11/35 M36W108T, M36W108B Table 11. Flash Polling and Toggle Bits (1) Mode DQ7 DQ6 DQ2 DQ7 Toggle 1 Erase 0 Toggle Note 1 Erase Suspend Read (in Erase Suspend block) 1 1 Toggle Erase Suspend Read (outside Erase Suspend block) DQ7 DQ6 DQ2 Erase Suspend Program DQ7 Toggle N/A Program Note: 1. Toggle if the address is within a block being erased. ‘1’ if the address is within a block not being erased. Status Register Bits P/E.C. status is indicated during execution by Data Polling on DQ7, detection of Toggle on DQ6 and DQ2, or Error on DQ5 and Erase Timer DQ3 bits. Any read attempt during Program or Erase command execution will automatically output these five Status Register bits. The P/E.C. automatically sets bits DQ2, DQ3, DQ5, DQ6 and DQ7. Other bits (DQ0, DQ1 and DQ4) are reserved for future use and should be masked (see Table 10 and Table 11). Data Polling Bit (DQ7). When Programming operations are in progress, this bit outputs the complement of the bit being programmed on DQ7. During Erase operation, it outputs a ’0’. After completion of the operation, DQ7 will output the bit last programmed or a ’1’ after erasing. Data Polling is valid and only effective during P/E.C. operation, that is after the fourth W pulse for programming or after the sixth W pulse for erase. It must be performed at the address being programmed or at an address within the block being erased. If all the blocks selected for erasure are protected, DQ7 will be set to '0' for about 100µs, and then return to the previous addressed memory data value. See Figure 9 for the Data Polling flowchart and Figure 11 for the Data Polling waveforms. DQ7 will also flag the Erase Suspend mode by switching from '0' to '1' at the start of the Erase Suspend. In order to monitor DQ7 in the Erase Suspend mode an address within a block being erased must be provided. For a Read Operation in Erase Suspend mode, DQ7 will output '1' if the read is attempted on a block being erased and the data value on oth- 12/35 er blocks. During Program operation in Erase Suspend Mode, DQ7 will have the same behaviour as in the normal program execution outside of the suspend mode. Toggle Bit (DQ6). When Programming or Erasing operations are in progress, successive attempts to read DQ6 will output complementary data. DQ6 will toggle following toggling of either G, or EF when G is at VIL. The operation is completed when two successive reads yield the same output data. The next read will output the bit last programmed or a '1' after erasing. The toggle bit DQ6 is valid only during P/E.C. operations, that is after the fourth W pulse for programming or after the sixth W pulse for Erase. If the blocks selected for erasure are protected, DQ6 will toggle for about 100µs and then return back to Read. DQ6 will be set to '1' if a Read operation is attempted on an Erase Suspend block. When erase is suspended DQ6 will toggle during programming operations in a block different to the block in Erase Suspend. Either EF or G toggling will cause DQ6 to toggle. See Figure 11 for Toggle Bit flowchart and Figure 15 for Toggle Bit waveforms. Toggle Bit (DQ2). This toggle bit, together with DQ6, can be used to determine the device status during the Erase operations. It can also be used to identify the block being erased. During Erase or Erase Suspend a read from a block being erased will cause DQ2 to toggle. A read from a block not being erased will set DQ2 to '1' during erase and to DQ2 during Erase Suspend. During Chip Erase a read operation will cause DQ2 to toggle as all blocks are being erased. DQ2 will be set to '1' during program operation and when erase is complete. After erase completion and if the error bit DQ5 is set to '1', DQ2 will toggle if the faulty block is addressed. Error Bit (DQ5). This bit is set to '1' by the P/E.C. when there is a failure of programming, block erase, or chip erase that results in invalid data in the memory block. In case of an error in block erase or program, the block in which the error occurred or to which the programmed data belongs, must be discarded. The DQ5 failure condition will also appear if a user tries to program a '1' to a location that is previously programmed to '0'. Other Blocks may still be used. The error bit resets after a Read/Reset (RD) instruction. In case of success of Program or Erase, the error bit will be set to '0'. Erase Timer Bit (DQ3). This bit is set to '0' by the P/E.C. when the last block Erase command has been entered to the Command Interface and it is awaiting the Erase start. When the erase timeout period is finished, after 50µs to 90µs, DQ3 returns to '1'. M36W108T, M36W108B Table 12. Flash Program/Erase Times and Endurance (TA = 0 to 70 °C; VCC = 2.7 V to 3.6 V) Flash Memory Chip Parameter Unit Typ Typical after 100k W/E Cycles Chip Erase (Preprogrammed) 5 3.3 Chip Erase 12 sec Boot Block Erase 2.4 sec Parameter Block Erase 2.3 sec Main Block (32Kb) Erase 2.7 sec Main Block (64Kb) Erase 3.3 Min Max sec 15 sec Chip Program (Byte) 8 8 sec Byte Program 10 10 µs Program/Erase Cycles (per Block) 100,000 cycles 13/35 M36W108T, M36W108B occurring edge. The Write cycle can be terminated by the rising edge of E1S, the rising edge of W or the falling edge of E2S, whichever occurs first. If the Output is enabled (E1S=VIL, E2S=VIH and G=VIL), then W will return the outputs to high impedance within tWLQZ of its falling edge. Care must be taken to avoid bus contention in this type of operation. Data input must be valid for tDVWH before the rising edge of Write Enable, or for tDVE1H before the rising edge of E1S or for tDVE2L before the falling edge of E2S, whichever occurs first, and remain valid for tWHDX, tE1HDX or tE2LDX (see Table 22, Figures 17, 18, 19). Output Disable. The data outputs are high impedance when the Output Enable (G) is at VIH with Write Enable (W) at VIH. Power-Down. The SRAM chip has a Chip Enable power-down feature which invokes an automatic standby mode (see Table 21, Figure 16) whenever either Chip Enable is de-asserted (E1S=V IH or E2S=VIL). Data Retention The SRAM data retention performances as VCCS go down to V DR are described in Table 23 and Figures 22, 23. In E1S controlled data retention mode, minimum standby current mode is entered when E1S ≥ VCCS – 0.2V and E2S ≤ 0.2V or E2S ≥ VCCS – 0.2V. In E2S controlled data retention mode, minimum standby current mode is entered when E2S ≤ 0.2V. SRAM COMPONENT Device Operations The following operations can be performed using the appropriate bus cycles: Read Array, Write Array, Output Disable, Power Down (see Table 13). Read. Read operations are used to output the contents of the SRAM Array. The SRAM is in Read mode whenever Write Enable (W) is at VIH with Output Enable (G) at V IL, and both Chip Enables (E1S and E2S) are asserted. Valid data will be available at the eight output pins within t AVQV after the last stable address, providing G is Low, E1S is Low and E2S is High. If Chip Enable or Output Enable access times are not met, data access will be measured from the limiting parameter (tE1LQV, t E2HQV, or t GLQV) rather than the address. Data out may be indeterminate at tE1LQX, tE2HQX and tGLQX, but data lines will always be valid at t AVQV (see Table 21, Figure 14, Figure 15). Write. Write operations are used to write data in the SRAM. The SRAM is in Write mode whenever the W and E1S pins are at VIL, with E2S at VIH. Either the Chip Enable inputs (E1S and E2S) or the Write Enable input (W) must be de-asserted during address transitions for subsequent write cycles. Write begins with the concurrence of both Chip Enables being active with W at VIL. A Write begins at the latest transition among E1S going to VIL, E2S going to VIH and W going to VIL. Therefore, address setup time is referenced to Write Enable and both Chip Enables as tAVWL, t AVE1L and tAVE2H respectively, and is determined by the latter Table 13. SRAM User Bus Operations (1) Operation E1S E2S W G DQ0-DQ7 Power Read VIL VIH VIH VIL Data Output Active Write VIL VIH VIL X Data Input Active Output Disable VIL VIH VIH VIH Hi-Z Active VIH X X X Hi-Z Stand-by TTL X VIL X X Hi-Z Stand-by TTL/CMOS Power Down Note: 1. X = VIL or VIH. 14/35 M36W108T, M36W108B Table 14. DC Characteristics (TA = 0 to 70°C, –20 to 85°C, –40 to 85°C; VCCF = VCCS = 2.7V to 3.6V) Symbol Parameter ILI Input Leakage Current ILO Output Leakage Current Test Condition Min Max Unit 0V ≤ VIN ≤ VCCF / VCCS –1 1 µA 0V ≤ VOUT ≤ VCCF / VCCS –1 1 µA ICCF1 Flash Chip Supply Current (Read) EF = VIL, G = VIH, f = 6MHz, V ≤ VOUT ≤ VCCF 10 mA ICCF2 (1) Flash Chip Supply Current (Write) Program or Erase in progress 20 µA EF = VCCF ± 0.2V 100 µA E1S = VIL, E2S = VIH, f= 10MHz 40 mA E1S = VIL, E2S = VIH, f= 1MHz 10 mA ICCF3 Flash Chip Supply Current (Stand-by) ICCS1 SRAM Chip Supply Current (Read) ICCS2 (1) SRAM Chip Supply Current (Write) 20 mA SRAM Chip Supply Current (Stand-by) 20 µA ICCS3 VILF Flash Chip Input Low Voltage –0.5 0.8 V VIHF Flash Chip Input High Voltage 0.7 VCCF VCCF + 0.3 V VILS SRAM Chip Input Low Voltage –0.3 0.4 V VIHS SRAM Chip Input High Voltage 2.2 VCCS + 0.3 V VOLF Flash Chip Output Low Voltage IOL = 1.8mA 0.45 V VOHF Flash Chip Output High Voltage IOH = –100µA VOLS SRAM Chip Output Low Voltage IOL = 2.1mA VOHS SRAM Chip Output High Voltage IOH = –1.0mA VCCF – 0.4 V 0.4 V 2.2 V Note: 1. Sampled only, not 100% tested. Table 15. Capacitance (1) (TA = 25 °C, f = 1 MHz) Symbol CIN COUT Parameter Test Condition Max Unit VIN = 0V 6 pF VOUT = 0V 12 pF Input Capacitance Output Capacitance Min Note: 1. Sampled only, not 100% tested. Table 16. AC Measurement Conditions Figure 5. AC Testing Load Circuit Input Rise and Fall Times ≤ 10ns Input Pulse Voltages 0 to 3V Input and Output Timing Ref. Voltages 0.8V 1N914 1.5V 3.3kΩ Figure 4. AC Testing Input/Output Waveforms DEVICE UNDER TEST 3V OUT CL = 30pF or 100pF 1.5V 0V AI01417 CL includes JIG capacitance AI01968 15/35 M36W108T, M36W108B Table 17. Flash Read AC Characteristics (TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCF = 2.7V to 3.6V) Flash Memory Chip Symbol Alt Parameter 100 120 CL = 30pF CL = 100pF Test Condition Unit Min tAVAV tRC Address Valid to Next Address Valid EF = VIL, G = VIL tAVQV tACC Address Valid to Output Valid EF = VIL, G = VIL tELQX (1) tLZ Chip Enable Low to Output Transition G = VIL tELQV (2) tCE Chip Enable Low to Output Valid G = VIL tGLQX (1) tOLZ Output Enabled Low to Output Transition EF = VIL tGLQV (2) tOE Output Enable Low to Output Valid EF = VIL tEHQX tOH Chip Enable High to Output Transition G = VIL tEHQZ (1) tHZ Chip Enable High to Output Hi-Z G = VIL tGHQX tOH Output Enable High to Output Transition EF = VIL tGHQZ (1) tDF Output Enable High to Output Hi-Z EF = VIL tAXQX tOH Address Transition to Output Transition EF = VIL, G = VIL 100 (1,3) Min Max 120 100 0 ns 120 0 100 0 0 0 0 0 0 0 ns ns 30 0 10 ns ns 30 30 ns ns 50 30 ns ns 120 40 tRRB RP Low to Read Mode tREADY tPLYH Max ns ns 10 µs tPHEL tRH RP High to Chip Enable Low 50 50 ns tPLPX tRP RP Pulse Width 500 500 ns 0 0 ns tCCR (4) Note: 1. 2. 3. 4. 16/35 Chip Enabled Recovery Time Sampled only, not 100% tested. G may be delayed by up to t ELQV - tGLQV after the falling edge of EF without increasing tELQV. To be considered only if the Reset pulse is given while the memory is in Erase, Erase Suspend or Program Mode. See Flash-SRAM Switching Waveforms. Note: Write Enable (W) = High. DQ0-DQ7 G EF A0-A19 tAVQV tGLQV tGLQX tELQX tELQV VALID tAVAV VALID tGHQZ tGHQX tEHQX tEHQZ tAXQX AI02511B M36W108T, M36W108B Figure 6. Flash Read Mode AC Waveforms 17/35 M36W108T, M36W108B Table 18. Flash Write AC Characteristics, Write Enable Controlled (TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCF = 2.7V to 3.6V) Flash Memory Chip Symbol Alt 100 120 CL = 30pF CL = 100pF Parameter Unit Min tAVAV tWC Address Valid to Next Address Valid tELWL tCS tWLWH Max Min Max 100 120 ns Chip Enable Low to Write Enable Low 0 0 ns tWP Write Enable Low to Write Enable High 50 50 ns tDVWH tDS Input Valid to Write Enable High 50 50 ns tWHDX tDH Write Enable High to Input Transition 0 0 ns tWHEH tCH Write Enable High to Chip Enable High 0 0 ns tWHWL tWPH Write Enable High to Write Enable Low 30 30 ns tAVWL tAS Address Valid to Write Enable Low 0 0 ns tWLAX tAH Write Enable Low to Address Transition 50 50 ns Output Enable High to Write Enable Low 0 0 ns tGHWL tVCHEL tVCS VCC High to Chip Enable Low 50 50 µs tWHGL tOEH Write Enable High to Output Enable Low 0 0 ns tPHPHH (1,2) tVIDR RP Rise Time to VID 500 500 ns tPLPX tRP RP Pulse Width 500 500 ns tWHRL (1) tBUSY Program Erase Valid to RB Delay tPHWL (1) tRSP RP High to Write Enable Low Note: 1. Sampled only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. 18/35 90 4 90 4 ns µs M36W108T, M36W108B Figure 7. Flash Write AC Waveforms, W Controlled tAVAV A0-A19 VALID tWLAX tAVWL tWHEH EF tELWL tWHGL G tGHWL tWLWH W tWHWL tDVWH DQ0-DQ7 tWHDX VALID VCCF tVCHEL RB tWHRL AI02512 Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W. 19/35 M36W108T, M36W108B Table 19. Flash Write AC Characteristics, Chip Enable Controlled (TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCF = 2.7V to 3.6V) Flash Memory Chip Symbol Alt 100 120 CL = 30pF CL = 100pF Parameter Unit Min tAVAV tWC Address Valid to Next Address Valid tWLEL tWS tELEH Max Min Max 100 120 ns Write Enable Low to Chip Enable Low 0 0 ns tCP Chip Enable Low to Chip Enable High 50 50 ns tDVEH tDS Input Valid to Chip Enable High 50 50 ns tEHDX tDH Chip Enable High to Input Transition 0 0 ns tEHWH tWH Chip Enable High to Write Enable High 0 0 ns tEHEL tCPH Chip Enable High to Chip Enable Low 30 20 ns tAVEL tAS Address Valid to Chip Enable Low 0 0 ns tELAX tAH Chip Enable Low to Address Transition 50 50 ns 0 0 ns 50 50 µs 0 0 ns tGHEL Output Enable High Chip Enable Low tVCHWL tVCS VCC High to Write Enable Low tEHGL tOEH Chip Enable High to Output Enable Low tPHPHH (1,2) tVIDR RP Rise Time to VID 500 500 ns tPLPX tRP RP Pulse Width 500 500 ns tEHRL (1) tBUSY Program Erase Valid to RB Delay tPHWL (1) tRSP RP High to Write Enable Low Note: 1. Sampled only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. 20/35 90 4 90 4 ns µs M36W108T, M36W108B Figure 8. Flash Write AC Waveforms, EF Controlled tAVAV VALID A0-A19 tELAX tAVEL tEHWH W tWLEL tEHGL G tGHEL tELEH EF tEHEL tDVEH DQ0-DQ7 tEHDX VALID VCCF tVCHWL RB tEHRL AI02513 Note: Address are latched on the falling edge of EF, Data is latched on the rising edge of EF. Figure 9. Flash Read and Write AC Waveforms, RP Related EF tPHEL W tPHWL RB RP tPLPX tPHPHH tPLYH AI02514 21/35 M36W108T, M36W108B Table 20. Flash Data Polling and Toggle Bits AC Characteristics (1) (TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCF = 2.7V to 3.6V) Flash Memory Chip Symbol 100 120 CL = 30pF CL = 100pF Parameter Unit Min Max Min Max Write Enable High to DQ7 Valid (Program, W Controlled) 10 2400 10 2400 ms Write Enable High to DQ7 Valid (Chip Erase, W Controlled) 1.0 60 1.0 60 sec Chip Enable High to DQ7 Valid (Program, EF Controlled) 10 2400 10 2400 µs tEHQ7V Chip Enable High to DQ7 Valid (Chip Erase, EF Controlled) 1.0 60 1.0 60 sec tQ7VQV Q7 Valid to Output Valid (Data Polling) 50 ns tWHQ7V tWHQV tEHQV Write Enable High to Output Valid (Program) 10 2400 10 2400 µs Write Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec Chip Enable High to Output Valid (Program) 10 2400 10 2400 µs Chip Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec Note: 1. All other timings are defined in Read AC Characteristics table. 22/35 40 DQ0-DQ6 DQ7 W G EF A0-A19 LAST WRITE CYCLE OF PROGRAM OR ERASE INSTRUCTION DATA POLLING READ CYCLES tWHQ7V tEHQ7V tELQV tAVQV tQ7VQV IGNORE DQ7 DATA POLLING (LAST) CYCLE tGLQV ADDRESS (WITHIN BLOCKS) VALID VALID AI02515B MEMORY ARRAY READ CYCLE M36W108T, M36W108B Figure 10. Flash Data Polling DQ7 AC Waveforms 23/35 24/35 DATA TOGGLE READ CYCLE Note: All other timings are as a normal Read cycle. LAST WRITE CYCLE OF PROGRAM OF ERASE INSTRUCTION DQ0-DQ1,DQ3-DQ5,DQ7 DQ6,DQ2 W G EF A0-A19 DATA TOGGLE READ CYCLE IGNORE STOP TOGGLE tWHQV tEHQV tAVQV MEMORY ARRAY READ CYCLE VALID VALID tGLQV tELQV VALID AI02516 M36W108T, M36W108B Figure 11. Flash Data Toggle DQ6, DQ2 AC Waveforms M36W108T, M36W108B Figure 12. Flash Data Polling Flowchart Figure 13. Flash Data Toggle Flowchart START START READ DQ2, DQ5 & DQ6 READ DQ5 & DQ7 at VALID ADDRESS DQ7 = DATA NO NO YES NO DQ5 =1 YES READ DQ2, DQ6 YES DQ2, DQ6 = TOGGLE NO FAIL DQ5 =1 YES READ DQ7 DQ7 = DATA NO DQ2, DQ6 = TOGGLE YES NO YES PASS FAIL PASS AI01369 AI01873 25/35 M36W108T, M36W108B Table 21. SRAM Read AC Characteristics (TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCS = 2.7 V to 3.6 V) SRAM Chip 100 Symbol Parameter Unit CL = 100pF Min Max tAVAV Read Cycle Time tAVQV Address Valid to Output Valid 100 ns tE1LQV Chip Enable 1 Low to Output Valid 100 ns tE2HQV Chip Enable 2 High to Output Valid 100 ns tGLQV Output Enable Low to Output Valid 50 ns tE1LQX Chip Enable 1 Low to Output Transition 10 ns tE2HQX Chip Enable 2 High to Output Transition 10 ns tGLQX Output Enable Low to Output Transition 5 ns tE1HQZ Chip Enable 1 High to Output Hi-Z 0 30 ns tE2LQZ Chip Enable 2 Low to Output Hi-Z 0 30 ns tGHQZ Output Enable High to Output Hi-Z 0 30 ns tAXQX Address Transition to Output Transition 15 ns tPU (1) Chip Enable 1 Low or Chip Enable 2 High to Power Up 0 ns tPD (1) Chip Enable 1 High or Chip Enable 2 Low to Power Down tCCR (2) 100 Chip Enable Recovery Time ns 100 0 ns Note: 1. Sampled only. Not 100% tested. 2. See Flash-SRAM Switching Waveforms. Figure 14. SRAM Read Mode AC Waveforms, Address Controlled tAVAV A0-A16 VALID tAVQV tAXQX DQ0-DQ7 DATA VALID DATA VALID AI02436 Note: E1S = Low, E2S = High, G = Low, W = High. 26/35 ns M36W108T, M36W108B Figure 15. SRAM Read AC Waveforms, E1S, E2S or G Controlled tAVAV VALID A0-A16 tAVQV tAXQX tE1LQV tE1HQZ E1S tE1LQX tE2HQV tE2LQZ E2S tE2HQX tGLQV tGHQZ G tGLQX DQ0-DQ7 DATA VALID AI02435 Note: Write Enable (W) = High. Figure 16. SRAM Stand-by AC Waveforms E1S E2S ICC4 ICC5 tPU tPD 50% AI02517 27/35 M36W108T, M36W108B Table 22. SRAM Write AC Characteristics (TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCS = 2.7 V to 3.6 V) SRAM Chip 100 Symbol Parameter Unit CL = 100pF Min tAVAV Write Cycle Time tAVWL Max 100 ns Address Valid to Write Enable Low 0 ns tAVWH Address Valid to Write Enable High 80 ns tWLWH Write Enable Pulse Width 70 ns tWHAX Write Enable High to Address Transition 0 ns tWHDX Write Enable High to Input Transition 0 ns tWHQX Write Enable High to Output Transition 0 ns tWLQZ Write Enable Low to Output Hi-Z 0 tAVE1L Address Valid to Chip Enable 1 Low 0 ns tAVE2H Address Valid to Chip Enable 2 High 0 ns tE1HAX Chip Enable 1 High to Address Transition 0 ns tE2LAX Chip Enable 2 Low to Address Transition 0 ns tDVWH Input Valid to Write Enable High 40 ns tDVE1H Input Valid to Chip Enable 1 High 40 ns tDVE2L Input Valid to Chip Enable 2 Low 40 ns 30 ns Figure 17. SRAM Write AC Waveforms, W Controlled tAVAV VALID A0-A16 tAVWH tAVE1L tWHAX E1S tAVE2H E2S tAVWL tWLWH W tWHQX tWLQZ tDVWH DQ0-DQ7 tWHDX INPUT VALID AI02434 Note: Output Enable (G) = Low. 28/35 M36W108T, M36W108B Figure 18. SRAM Write AC Waveforms, E1S Controlled tAVAV VALID A0-A16 tAVE1L tE1HAX E1S E2S tAVWL W tDVE1H tWHDX INPUT VALID DQ0-DQ7 AI02433 Note: Output Enable (G) = High. Figure 19. SRAM Write AC Waveforms, E2S Controlled tAVAV VALID A0-A16 E1S tAVE2H tE2LAX E2S tAVWL W tDVE2L DQ0-DQ7 tWHDX INPUT VALID AI02432 Note: Output Enable (G) = High. 29/35 M36W108T, M36W108B Table 23. SRAM Low VCC Data Retention Characteristics (1, 2) (TA = 0 to 70 °C; VCCS = 2.7 V to 3.6 V) Symbol Parameter Test Condition ICCDR Supply Current (Data Retention) VCCS = 3V, E1S ≥ VCCS – 0.2V, E2S ≥ VCCS – 0.2V or E2S ≤ 0.2V, f = 0 VDR Supply Voltage (Data Retention) E1S ≥ VCCS – 0.2V,E2S ≤ 0.2V, f = 0 2 tCDR Chip Disable to Power Down E1S ≥ VCCS – 0.2V,E2S ≤ 0.2V, f = 0 0 ns 5 ms tR Min Operation Recovery Time Max Unit 20 µA 3.6 V Note: 1. All other Inputs VIH ≤ VCC – 0.2V or VIL ≤ 0.2V. 2. Sampled only. Not 100% tested. Figure 20. SRAM Low VCC Data Retention AC Waveforms, E1S Controlled tCDR DATA RETENTION MODE tR VCCS 2.7 V 2.2 V VDR E1S ≥ VCCS – 0.2V E1S V SS AI02438 30/35 M36W108T, M36W108B Figure 21. SRAM Low VCC Data Retention AC Waveforms, E2S Controlled DATA RETENTION MODE VCCS 2.7 V E2S tCDR tR VDR 0.4 V E2S ≤ 0.2V VSS AI02437 Figure 22. Flash-SRAM Switching Waveforms EF tCCR tCCR E1S E2S AI02510 31/35 M36W108T, M36W108B Table 24. Ordering Information Scheme Example: M36W108T 100 ZM 1 T Product Family M36 = MMP (Flash + SRAM) Operating Voltage W = 2.7V to 3.6V SRAM Chip size & organization 1 = 1 Mbit (128Kb x8) Flash Chip size & orgnization 08 = 8 Mbit (1Mb x8), Boot Block Array Matrix T = Top Boot B = Bottom Boot Speed 100 = 100 ns 120 = 120 ns Package ZM = LBGA48: 1mm pitch ZN = LGA48: 1mm pitch Temperature Range 1 = 0 to 70 °C 5 = –20 to 85 °C 6 = –40 to 85 °C Option T = Tape & Reel Packing The M36W108T and M36W108B are replaced respectively by the new version M36W108AT and M36W108AB. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you. 32/35 M36W108T, M36W108B Table 25. LBGA48 - 6 x 8 balls, 1.0 mm pitch, Package Mechanical Data mm inches Symb Typ Min Max Typ Min Max A 1.250 1.150 1.350 0.049 0.045 0.053 A1 0.300 0.250 0.350 0.012 0.010 0.014 A2 0.950 – – 0.037 – – b 0.400 0.350 0.450 0.016 0.014 0.018 ddd 0.150 0.006 D 10.000 9.800 10.200 0.394 0.386 0.402 D1 5.000 – – 0.197 – – e 1.000 – – 0.039 – – E 12.000 11.800 12.200 0.472 0.465 0.480 E1 7.000 – – 0.276 – – SD 0.500 – – 0.020 – – SE 0.500 – – 0.020 – – Figure 23. LBGA48 - 6 x 8 balls, 1.0 mm pitch, Package Outline D D1 SD BALL "A1" E SE E1 ddd e b A A2 A1 BGA-Z01 Drawing is not to scale. 33/35 M36W108T, M36W108B Table 26. LGA48 - 6 x 8 balls, 1.0 mm pitch, Package Mechanical Data mm inches Symb Typ Min Max Typ Min Max A 0.950 0.900 1.000 0.037 0.035 0.039 b 0.450 0.420 0.480 0.018 0.017 0.019 D 10.000 9.800 10.200 0.394 0.386 0.402 D1 5.000 – – 0.197 – – D2 9.200 – – 0.362 – – e 1.000 – – 0.039 – – E 12.000 11.800 12.200 0.472 0.465 0.480 E1 7.000 – – 0.276 – – E2 10.200 – – 0.402 – – SD 0.500 – – 0.020 – – SE 0.500 – – 0.020 – – Figure 24. LGA48 - 6 x 8 balls, 1.0 mm pitch, Package Outline D D2 D1 SD LAND "A1" E E2 SE E1 e b A LGA-Z02 Drawing is not to scale. 34/35 M36W108T, M36W108B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 1999 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 35/35