TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IMPS - U57 AMPLIFIER TRANSISTOR PNP SILICON ANNULAR AMPLIFIER TRANSISTOR PNP SILICON . . . designed for general-purpose, high-voltage amplifier and driver applications. • High Collector-Emitter Breakdown Voltage — BVCEO = 10° Vdc < Min > @ 'C = '-0 mAdc • High Power Dissipation - PD = 10 W @ TC •* 25°C c • Complement to NPN MPS-U07 H-(—) •— A — - "-"J~~ ' j O *=$" ~f C E B C I MAXIMUM RATINGS Rating Symbol Value Unit VCEO VCB Vg B IQ PD 100 100 4.0 2.0 1.0 8.0 Vdc Vdc Vdc Adc Watt mW/°C Total Power Dissipation <@ TC = 25°C Derate above 25°C PQ 10 80 Watts mW/°C TJ.Tstg -55 to +150 °C THERMAL CHARACTERISTICS Characteristic K - \ » » Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation ® TA = 25°C Derate above 25°C Operating and Storage Junction Temperature R ange L } J Max Unit Thermal Resistance. Junction to Case Symbol R»JC 125 °C/W Thermal Resistance, Junction to Ambient RfiJA 125 °C/W -lofSTYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR DIM B C D f 6 H MIN MAX 7.24 6.60 5.41 5.66 038 0.53 3.18 3.33 2.S 49SC 3.94 4.19 MIN 0.260 0.213 0.285 0.223 JOJ IS 0.125 0.100 0.155 0.021 0.131 BSC 0.165 0.500 K 12.07 12.70 0.475 L 25.02 25.53 0.9 15 1.005 0.201 BSC N Ik R 5.1 JJSC 2.69 2.39 1.14 1.40 0.094 0.106 0.04S 0.055 CASE 152-02 Quality Semi-Conductors MAX tSEmi-GontLuctoi tPi.ocLu.ct3L, One. TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MPS-U57 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Min Tvp Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (0 dC" 1.0 mAdc, IB -0) BVcEO 100 - - Vdc Emitter-Bow Breakdown Voltage <IC = 100*iAdc, IE -0) BVeBO 4.0 - - Vdc ICBO - - 100 nAdc 60 30 - 140 _ _ Collector Cutoff Current (Vcfl-40 Vdc, l e - 0 ) ON CHARACTERISTICS d> DC Current Gain (lc = 50 mAdc. VCE * 1.0 Vdc) (1C • 250 mAdc, VCE • '-° vd<=> (1C • 500 mAdc, VCE • t.O Vdc) _ KFE Collector-Emitter Saturation Voltage (lc - 250 mAdc. IB - 10 mAdc) (1C - 250 mAdc. IB • 25 mAdc) VCE(sat) Bate-Emitter On Voltage <lc • 250 mAdc, VCE " 5.0 Vdc) vB£(on) - fT 50 Cob - 6S 30 Vdc 0.5 - 0.24 0.15 1.2 Vdc 100 - MHz 10 15 pF 0.78 SMALL-SIGNAL CHARACTERISTICS Current-Gain—Bandwidth Product (1) (1C • 250 mAdc. VCE = 5.0 Vdc, f - 100 MHz) Output Capacitance (VCB • '0 vdc. iE - o. f = 100 kHz) (1) Pulie Test: Pulse Width « 300«ii. Duty Cycle < 2.0%. FIGURE 1 - DC CURRENT GAIN r- - • ::=^=- FIGURE 2 - "ON" VOLTAGES - == " N —5s V, \ i/CE 7.0 10 20 50 70 100 ?00 SOI • 1-0 Vde II IQ. COLLECTOR CURRENT (mA) 1C COLLECTOR CURRENTImAI FIGURE 3 - DC SAFE OPERATING AREA FIGURE 4 - CURRENT-GAIN-BANDWIDTH PRODUCT 5.0 2,0 *•• i £ £I III 1C. COLLECTOR CURRE* f i o § 200 ^\ • | S iKOndB'H : kdown LiinilM — 6ending Wi t Lirniitrj S =s - = Awli^HToBVcEO /" 5.0 Vdc s f> ' i 100 kl £ SI r— 'r ¥ \0 70 vr ij - 2S°C _j N VCE. COLLECTOR EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: junction temperature and second breakdown. Safe operating area curves indicate I c - VCE l™it» of the transistor that mutt be observed for reliable operation, i.e., the transistor mutt not be subjected to greater dissipation than the curvet indicate. Quality Semi-Conductors N II 1C, COLLECTOR CUUHHTImAI The data of Figure 3 it based on Tj(pi,) - 150°C; Tc i* «"*• depending on conditions. At high case temperature!. tMr™ limitation* will reduce the power that can be handled to »»«•» '•" than the limitationt imposed by second breakdown. 100 1»