DMG4N60SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT NEW PRODUCT Product Summary Features V(BR)DSS (@ TJ Max) RDS(ON) Max ID TC = +25°C 650V 2.3 @ VGS = 10V 3.7A Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications 100% Unclamped Inductive Switch (UIS) Test in Production Low Gate Input Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Motor Control Backlighting DC-DC Converters Power Management Functions Case: TO252 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) D TO252 D G S Top View Pin Out Top View Internal Schematic Ordering Information (Note 4) Part Number DMG4N60SK3-13 Notes: Compliance Standard Case TO252 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 4N3D0S YYWW DMG4N60SK3 Document number: DS37697 Rev. 2 - 2 =Manufacturer’s Marking 4N3D0S= Product Type Marking Code YYWW = Date Code Marking YY or YY= Last Digit of Year (ex: 14 = 2014) WW or WW= Week Code (01 to 53) 1 of 7 www.diodes.com November 2015 © Diodes Incorporated DMG4N60SK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State NEW PRODUCT NEW PRODUCT Continuous Drain Current, VGS = 10V TC = +25°C TC = +100°C ID Maximum Body Diode Forward Current Pulsed Drain Current (10s pulse, Duty Cycle = 1%) Avalanche Current, L = 60mH (Note 6) Avalanche Energy, L = 60mH (Note 6) IS IDM IAS EAS Value 600 ±30 3.7 2.4 3.7 5 1.7 90 Unit V V Value 48 19 47 2.6 Unit A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TC = +25°C TC = +100°C Total Power Dissipation PD Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case Operating and Storage Temperature Range RJA RJC TJ, TSTG W °C/W -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 600 1 100 V µA nA VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V VGS(TH) RDS(ON) VSD 2.5 3.5 2.0 0.8 4.5 2.3 1.4 V V VDS = VGS, ID = 250µA VGS = 10V, ID = 2A VGS = 0V, IS = 1A Ciss Coss Crss RG Qg Qgs Qgd 532 47 4 3.3 14.3 3.3 6.9 14 34 32 25 229 1564 pF VDS = 25V, f = 1.0MHz, VGS = 0 VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = 480V, ID = 4A, VGS = 10V ns VDD = 300V, RG = 25, ID = 4A, VGS = 10V ns nC dI/dt = 100A/μs, VDS = 100V, IF = 4A tD(ON) tR tD(OFF) tF tRR QRR Test Condition 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. Guaranteed by design. Not subject to production testing. 7. Short duration pulse test used to minimize self-heating effect. DMG4N60SK3 Document number: DS37697 Rev. 2 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMG4N60SK3 1 8.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS=10V VGS=10.0V 6.0 VGS=8.0V 5.0 VGS=7.0V 4.0 VGS=6.0V 3.0 2.0 VGS=4.0V 0.6 150℃ 0.4 85℃ 125℃ 0.2 VGS=5.0V VGS=4.5V 0.8 25℃ 1.0 -55℃ 0.0 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic 4 VGS=10.0V 3.5 3 2.5 2 1.5 1 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE () 0 1 2 3 4 5 6 ID, DRAIN-SOURCE CURRENT (A) 9 7 6 5 4 3 2 1 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 150℃ 125℃ 5 4 85℃ 3 25℃ 2 -55℃ 1 5 10 15 20 25 30 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic VGS=10V 6 8 ID=2.0A 8 7 8 7 1 10 Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT NEW PRODUCT 7.0 3 VGS=10V, ID=2A 2.5 2 1.5 1 0.5 0 0 0 1 2 3 4 5 Document number: DS37697 Rev. 2 - 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs Drain Current and Temperature DMG4N60SK3 -50 Figure 6. On-Resistance Variation with Temperature 3 of 7 www.diodes.com November 2015 © Diodes Incorporated 5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDSON, DRAIN-SOURCE ON-RESISTANCE () 5 VGS=10V, ID=2A 4 3 2 1 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 4.5 4 ID=1mA 3.5 3 ID=250A 2.5 2 1.5 1 -50 150 10 -25 0 25 50 75 125 150 10000 8 CT, JUNCTION CAPACITANCE (pF) 9 IS, SOURCE CURRENT (A) 100 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature Figure 7. On-Resistance Variation with Temperature VGS=0V, TA=150℃ 7 VGS=0V, TA=125℃ 6 5 VGS=0V, TA=85℃ 4 3 VGS=0V, TA=25℃ 2 VGS=0V, TA=-55℃ 1 f=1MHz 1000 Ciss 100 Coss 10 Crss 0 1 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 10 10 PW=100s PW=10s RDS(ON) Limited 8 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT NEW PRODUCT DMG4N60SK3 6 VDS=480V, ID=4A 4 2 0 1 PW=1s PW=100ms PW=10ms 0.1 PW=1ms TJ,(MAX)=150℃ TC=25℃ Single Pulse DUT on infinite heatsink VGS=10V 0.01 0 3 6 9 12 Qg, TOTAL GATE CHARGE (nC) Figure 11. Gate Charge DMG4N60SK3 Document number: DS37697 Rev. 2 - 2 15 4 of 7 www.diodes.com 1 PW=1s 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 1000 November 2015 © Diodes Incorporated DMG4N60SK3 NEW PRODUCT NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.7 D=0.9 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RJC(t)=r(t) *RJC RJC=2.62℃/W D=0.005 D=Single Pulse Duty Cycle, D=t1 / t2 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 1 10 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. (1) Package Type: TO252 (DPAK) E A b3 7° ± 1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane E1 0.508 D1 Seating Plane a L A1 TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm 2.74REF DMG4N60SK3 Document number: DS37697 Rev. 2 - 2 5 of 7 www.diodes.com November 2015 © Diodes Incorporated DMG4N60SK3 Package Outline Dimensions (Cont.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. (2) Package Type: TO252 (DPAK) (Type BR) E A NEW PRODUCT NEW PRODUCT b3 TO252 (DPAK) (Type BR) Dim Min Max Typ A 2.20 2.40 A1 0.00 0.10 b 0.50 0.70 b3 5.20 5.40 c 0.45 0.55 D 5.95 6.25 D1 5.10 5.50 E 6.45 6.70 E1 4.71 4.91 e 2.24 2.34 H 9.45 9.95 L 1.25 1.75 L3 0.95 1.25 L4 0.60 0.90 All Dimensions in mm c L3 D H L4 L e b(3x) A1 b2(2x) D1 E1 (3) Package Type: TO252 (DPAK) (Type TH) E L3 A b3 7° ± 2° L5 c A4 Ø D 0 20 1. L4 H A2 7° ± 2° e b(3x) Gauge Plane E1 7° ± 2° L2 D1 Seating Plane a L A1 2.90REF DMG4N60SK3 Document number: DS37697 Rev. 2 - 2 6 of 7 www.diodes.com TO252 (DPAK) (Type TH) Dim Min Max Typ A 2.20 2.38 2.30 A1 0.00 0.10 A2 0.97 1.17 1.07 A4 0.10 REF b 0.72 0.85 0.78 b3 5.23 5.45 5.33 c 0.47 0.58 0.53 D 6.00 6.20 6.10 D1 5.30 REF e 2.286 BSC E 6.50 6.70 6.60 E1 4.70 4.92 4.83 H 9.90 10.10 10.30 L 1.40 1.70 1.60 L2 0.51 BSC L3 0.90 1.25 L4 0.60 1.00 0.80 L5 1.70 1.90 1.80 a 0° 8° All Dimensions in mm November 2015 © Diodes Incorporated DMG4N60SK3 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. NEW PRODUCT NEW PRODUCT X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 C Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DMG4N60SK3 Document number: DS37697 Rev. 2 - 2 7 of 7 www.diodes.com November 2015 © Diodes Incorporated